贵金属掺杂Ti/TiO2电极的制备及其电催化性能研究

采用阳极氧化-阴极电沉积两步法: 先在钛基体上用阳极氧化法制备多孔TiO₂薄膜, 接着在这层多孔状薄膜上采用阴极电沉积方法掺杂Pt, Ir来制备Ti/TiO₂-Pt修饰电极和Ti/TiO₂-Ir修饰电极. 用XRD, SEM分析了掺杂前后的成分、相结构及表面形貌的变化, 结果表明: Pt优先沉积在TiO₂多孔中; 与Pt不同, Ir没有表现出在TiO₂孔中优先沉积的现象, 出现这种现象的原因是这两种贵金属的电沉积电位相对于n-TiO₂的平带电位不同. 使用SIMS分析了在Ti/TiO₂-(Pt/Ir)修饰电极中Ti, Pt, Ir的浓度分布, 大致算出TiO₂薄膜厚度为750 nm左右. 由极化曲线和阻抗谱结果得出: 掺杂Pt, Ir明显改善了Ti/TiO₂ 电极的电催化性能, 且随着Pt沉积时间的增长, 修饰电极在硫酸析氧反应中的电催化活性提高.     

n型Bi2Te3-ySey温差电材料薄膜的电化学制备及表征

采用电化学控电位的方法在不锈钢基片上电沉积制备了Bi₂Te_3-ySe_y温差电材料薄膜。研究了电沉积溶液中硒含量与薄膜中硒含量的关系，考察了不同沉积电位对电沉积Bi₂Te_3-ySe_y薄膜的温差电性能的影响，并采用ESEM、EDS、XRD等方法对电沉积薄膜的形貌、成分及结构进行了分析。结果表明，在含有Bi³⁺、HTeO₂⁺和Se⁴⁺的电沉积溶液中，采用电化学沉积的方法，可实现铋、碲、硒三元共沉积，生成Bi₂Te_3-ySe_y半导体化合物。改变电沉积溶液组成，可控制Bi₂Te_3-ySe_y化合物中硒的掺杂浓度。-0.04 V沉积电位下制备的Bi₂Te_3-ySe_y薄膜较平整、致密，组成为Bi₂Te_2.7Se_0.3。退火处理可提高电沉积Bi₂Te_3-ySe_y薄膜的塞贝克系数，且控制沉积电位为-0.04 V下制备的Bi₂Te_3-ySe_y薄膜退火后的塞贝克系数为-123 μV·K^-1。     

Ga掺杂纳米TiO2薄膜的制备及其光电特性

利用射频磁控溅射法在玻璃衬底上制备了Ga掺杂的TiO₂薄膜,并在真空中于550 ℃下进行了2 h的退火处理。采用XRD、SEM、UV-Vis和PL光谱对薄膜进行了表征。XRD结果提示,在溅射功率为200 W,室温下制备的TiO₂薄膜具有混晶结构,且退火后的晶粒有长大的趋势。SEM分析表明,掺Ga薄膜的颗粒分布得较为均匀并存在尺寸变小的趋势,且出现有利于提高光催化性能的岛状结构,其平均颗粒尺寸为50 nm。UV-Vis透过谱指出,掺Ga后的TiO₂薄膜吸收边发生了明显红移,且退火后进一步红移了10~50 nm。通过接触角的测量与计算可知,550 ℃退火2 h后的薄膜具有良好的亲水性。光催化降解结果表明：样品具有较强的光催化能力。当用低功率(15 W)紫外灯照射8 h后,Ga掺杂的纳米TiO₂薄膜样品对亚甲基蓝溶液的降解率最高可达到71.8%。     

贵金属掺杂Ti/TiO2电极的制备及其电催化性能研究

采用阳极氧化-阴极电沉积两步法: 先在钛基体上用阳极氧化法制备多孔TiO₂薄膜, 接着在这层多孔状薄膜上采用阴极电沉积方法掺杂Pt, Ir来制备Ti/TiO₂-Pt修饰电极和Ti/TiO₂-Ir修饰电极. 用XRD, SEM分析了掺杂前后的成分、相结构及表面形貌的变化, 结果表明: Pt优先沉积在TiO₂多孔中; 与Pt不同, Ir没有表现出在TiO₂孔中优先沉积的现象, 出现这种现象的原因是这两种贵金属的电沉积电位相对于n-TiO₂的平带电位不同. 使用SIMS分析了在Ti/TiO₂-(Pt/Ir)修饰电极中Ti, Pt, Ir的浓度分布, 大致算出TiO₂薄膜厚度为750 nm左右. 由极化曲线和阻抗谱结果得出: 掺杂Pt, Ir明显改善了Ti/TiO₂ 电极的电催化性能, 且随着Pt沉积时间的增长, 修饰电极在硫酸析氧反应中的电催化活性提高.     

离子液体电沉积CuInxGa1-xSe2薄膜

采用循环伏安法(CV)对离子液体Reline中三元CuCl₂+InCl₃+SeCl₄体系和四元CuCl₂+InCl₃+GaCl₃+SeCl₄体系的电化学行为进行了研究。研究表明,In³⁺并入三元CIS(Cu-In-Se)薄膜体系和Ga³⁺并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径：一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu_1.00In_0.78Ga_0.27Se_2.13的薄膜。     

电沉积三维多孔Pt/SnO2薄膜及其对甲醇的电催化氧化

在高电流密度下以阴极析出的氢气泡为“模板”电沉积三维多孔Sn薄膜, 经在200 ℃ 2 h和400 ℃ 2 h热处理氧化后电沉积金属Pt, 制得三维多孔的Pt/SnO₂ (3D-Pt/SnO₂)薄膜. 通过扫描电镜(SEM)和X射线衍射(XRD)分析了薄膜的形貌和结构. 结果显示Pt主要沉积在SnO₂枝晶上, 形成Pt_shell/SnO_2core结构的枝晶. 在0.5 mol•dm^－3 H₂SO₄＋1.0 mol•dm^－3 CH₃OH溶液中的循环伏安结果表明, 3D-Pt/SnO₂薄膜电极在酸性溶液中电催化氧化甲醇的性能优于电沉积的纯铂电极, 而且具有较高的稳定性.     

电沉积三维多孔Pt/SnO2薄膜及其对甲醇的电催化氧化

在高电流密度下以阴极析出的氢气泡为“模板”电沉积三维多孔Sn薄膜, 经在200 ℃ 2 h和400 ℃ 2 h热处理氧化后电沉积金属Pt, 制得三维多孔的Pt/SnO₂ (3D-Pt/SnO₂)薄膜. 通过扫描电镜(SEM)和X射线衍射(XRD)分析了薄膜的形貌和结构. 结果显示Pt主要沉积在SnO₂枝晶上, 形成Pt_shell/SnO_2core结构的枝晶. 在0.5 mol•dm^－3 H₂SO₄＋1.0 mol•dm^－3 CH₃OH溶液中的循环伏安结果表明, 3D-Pt/SnO₂薄膜电极在酸性溶液中电催化氧化甲醇的性能优于电沉积的纯铂电极, 而且具有较高的稳定性.     

KCl-LiCl-MgCl2熔盐体系中共电沉积制备Mg-Li合金及理论分析

在670 ℃的KCl-LiCl-MgCl₂熔盐体系中通过共电沉积方法制备了Mg-Li合金,并进行了理论分析。循环伏安表明：670 ℃时,锂在镁上(镁预先沉积到钼丝上)的欠电位沉积形成了液态的Mg-Li合金;当MgCl₂质量分数为10%时,出现了Mg-Li合金成核。极化曲线表明：在含有5% MgCl₂的熔盐中,MgCl₂的极限电流密度为0.35 A·cm^-2,超过此值时,Mg和Li就能产生共电沉积。对沉积物进行X射线衍射和电感耦合等离子体发射光谱(ICP)分析表明：通过恒电流电解得到了3种不同相的Mg-Li合金。在电流密度为6.21 A·cm^-2电解2 h条件下,只有当MgCl₂质量分数小于10%时,才能得到Mg-Li合金。并通过Nernst和浓差极化方程讨论了MgCl₂浓度对于Mg-Li合金形成的影响。Mg-Li合金中锂的含量能够通过熔盐中的MgCl₂浓度配比和电解参数来控制。实验证明这种直接从原料入手,通过共电沉积制备Mg-Li合金的新方法是可行的。     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

纳米TiO2薄膜的制备方法

本文对纳米TiO₂薄膜的各种制备方法，包括基于溶胶－凝胶的涂层方法、电沉积、化学气相沉积、物理气相沉积、自组装制膜，以及喷雾热分解等方法的研究进展进行了综述，对不同方法的优缺点进行了比较和评述，对今后TiO₂薄膜制备的研究方法提出了一些建议。     

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.     

以乙醇作溶剂电沉积制备CIGS薄膜

利用恒电位电沉积法在以乙醇为溶剂的溶液中制备了铜铟镓硒(CIGS)薄膜.并采用扫描电子显微镜(SEM)、X射线能谱仪(EDS)、X射线衍射仪(XRD)和紫外-可见-近红外(UV-VIS-NIR)分光光度计分别对薄膜的形貌、成分、晶体结构和吸收特性进行了表征.结果表明在-1.6V(相对于饱和甘汞电极电位)工作电位下沉积的薄膜经450°C退火后能够形成形貌均匀致密、结晶性良好、带隙约为1.17eV的黄铜矿结构CuIn0.7Ga0.3Se2薄膜.实验过程中发现,以乙醇为溶剂可以有效避免在水溶液中出现的析氢现象,减小了沉积电位的限制.     

Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells

The electronic band structure at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface was investigated for its potential application in Cd-free Cu(In,Ga)Se(2) thin film solar cells. Zn(1-x)Mg(x)O thin films with various Mg contents were grown by atomic layer deposition on Cu(In(0.7)Ga(0.3))Se(2) absorbers, which were deposited by the co-evaporation of Cu, In, Ga, and Se elemental sources. The electron emissions from the valence band and core levels were measured by a depth profile technique using X-ray and ultraviolet photoelectron spectroscopy. The valence band maximum positions are around 3.17 eV for both Zn(0.9)Mg(0.1)O and Zn(0.8)Mg(0.2)O films, while the valence band maximum value for CIGS is 0.48 eV. As a result, the valence band offset value between the bulk Zn(1-x)Mg(x)O (x = 0.1 and x = 0.2) region and the bulk CIGS region was 2.69 eV. The valence band offset value at the Zn(1-x)Mg(x)O/CIGS interface was found to be 2.55 eV after considering a small band bending in the interface region. The bandgap energy of Zn(1-x)Mg(x)O films increased from 3.25 to 3.76 eV as the Mg content increased from 0% to 25%. The combination of the valence band offset values and the bandgap energy of Zn(1-x)Mg(x)O films results in the flat (0 eV) and cliff (-0.23 eV) conduction band alignments at the Zn(0.8)Mg(0.2)O/Cu(In(0.7)Ga(0.3))Se(2) and Zn(0.9)Mg(0.1)O/Cu(In(0.7)Ga(0.3))Se(2) interfaces, respectively. The experimental results suggest that the bandgap energy of Zn(1-x)Mg(x)O films is the main factor that determines the conduction band offset at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface. Based on these results, we conclude that a Zn(1-x)Mg(x)O film with a relatively high bandgap energy is necessary to create a suitable conduction band offset at the Zn(1-x)Mg(x)O/CIGS interface to obtain a robust heterojunction. Also, ALD Zn(1-x)Mg(x)O films can be considered as a promising alternative buffer material to replace the toxic CdS for environmental safety.     

Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols

Thin films of Ga(2)O(3) have been produced from [Ga(NMe(2))(3)](2) and ROH (R = CH(2)CH(2)NMe(2), CH(CH(2)NMe(2))(2), CH(CH(3))CH(2)NMe(2), CH(2)CH(2)OMe and C(CH(3))(2)CH(2)OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 degrees C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures.     

Dynamic analysis on metal selenide electrodeposition

Based on the basic principles of kinetics and some reasonable assumptions about the electrodeposition process, a dynamic model for metal selenide electrodeposition (kink site selected model) was constructed. This model is of universal significance in realizing the compositional prediction and dynamic behavior analysis of deposited films for different main salt concentration ratios and was applied to the ternary Cu–In–Se system. For CuInSe₂ electrodeposition, in the Cu–Se system, the co-deposition of Cu and Se can be carried out within a large range of main salt concentration ratio; in the Cu–In system, the mole fraction of Cu in deposited thin films is always higher than that of Cu²⁺ in electrolyte, while in the In–Se system, the co-deposition of In and Se can be achieved only when the In³⁺ concentration is much higher than the H₂SeO₃ concentration. As for the compositional estimation of CuInSe₂, the predictive results of our dynamic model agree well with the experimental data. It is then found that by correcting the difference of kink site selectivity constants caused by the change of deposition potential, the error of the predictive results can be reduced.     

A crystallographic description of experimentally identified formation reactions of Cu(In,Ga)Se2

This work describes solid-state reactions for the formation of the chalcopyrite compounds CuInSe₂, CuGaSe₂ and Cu(In,Ga)Se₂ on atomic scale. The most important chalcopyrite formation reactions which were identified by the authors by real-time in situ X-ray diffraction in preceding experiments are (A) CuSe+InSe→CuInSe₂, (B) Cu₂Se+2 InSe+Se→2 CuInSe₂ and (C) Cu₂Se+In₂Se₃→2 CuInSe₂. During the selenistaion of a metallic precursor containing gallium a separate fourth reaction occurs: (D) Cu₂Se+Ga₂Se₃→2 CuGaSe₂. The quaternary compound is finally formed by interdiffusion of CuInSe₂ with CuGaSe₂ (E). These five reactions differ in their activation energy and reaction speed. We explain these differences qualitatively by analysing the involved crystal structures for each reaction. It turns out that all reactions involved in the formation of Cu(In,Ga)Se₂ are promoted by epitaxial relations, which facilitates the formation of polycrystalline thin films at temperatures much below those necessary for single crystal growth. Recommendations for the growth of larger grains of Cu(In,Ga)Se₂ containing fewer defects are given.     

Gallium hydride complexes stabilised by multidentate alkoxide ligands: precursors to thin films of Ga2O3 at low temperatures

The donor-functionalised alkoxides {Me(3-x)N(CH(2)CH(2)O)(x)} (L(x); x = 1, 2) have been used to form gallium hydride complexes [{GaH(2)(L(1))}(2)] and [{GaH(L(2))}(2)] that are stable and isolable at room temperature. Along with a heteroleptic gallium tris(alkoxide) complex [Ga(L(1))(3)] and the dimeric complex [{GaMe(L(2))}(2)], these compounds have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted chemical vapour deposition (AACVD) with toluene as solvent. The resulting films were mostly transparent, indicating low levels of carbon contamination, and they were also mainly amorphous. However, [Ga(L(1))(3)] did contain visibly crystalline material deposited at a substrate temperature of 450?°C, by far the lowest ever observed for the CVD of gallium oxide.     

Gallium alkoxides: Synthesis and properties

Compounds Ga(OR)₃ (R = Me, Et, Prⁱ, Buⁿ, C₂H₄OMe) were synthesized by exchange reactions between gallium chloride and alkali metal alkoxides, the reetherefication of Ga(OPrⁱ)₃ and Ga(OC₂H₄OMe)₃ by other ROH (R = Me, Et), and anodic dissolution of metallic gallium in the presence of a electroconductive additive (LiCl, Bu₄NBr). When solid GaCl₃ is introduced into an alcoholic solution of NaOEt, stable soluble gallium oxoalkoxyhalides are formed. The same reaction with a GaCl₃ solution in toluene or electrochemical synthesis produces nonvolatile Ga(OEt)₃ samples, which have the polymer zigzag configuration [Ga(OR)_4/2(OR)]_∞. Mass spectrometry shows that only Ga(OPrⁱ)₃ and freshly prepared X-ray amorphous Ga(OEt)₃ samples (produced by reetherefication) are transferred to the gas phase. The spectra of the latter contain ions generated by penta-and hexanuclear oxoalkoxide molecules, along with fragments of orthospecies [Ga(OEt)₃]_2?4. IR spectra are described for all compounds synthesized.