Substrate temperature effects on film chemistry in plasma deposition of organics. III. Analysis by static secondary ion mass spectrometry

Static secondary ion mass spectrometry (SIMS) was used to examine the effect of reducing the substrate temperature during the radio frequency plasma deposition of organic films. Studies of two polymerizable plasma precursors (2-hydroxyethyl methacrylate and acrylic acid) and one nonpolymerizable precursor (acetone) deposited without substrate cooling and with liquid nitrogen cooling are presented. Acetone deposited with methanol/dry ice cooling was also investigated. Spectra of polymerizable precursors were analyzed by comparison to spectra for the corresponding conventionally-polymerized polymer films [i.e., poly(hydroxyethyl methacrylate) and poly(acrylic acid)]. Acetone spectra were interpreted by reference to SIMS analysis of plasma-deposited films prepared from isotopically-labelled acetone and to reference homopolymers. Comparison of the SIMS spectra of films deposited at different substrate temperatures indicates that a reduction in substrate temperature generally results in higher intensity of peaks characteristic of oxygenated ion structures. SIMS also suggests that the reduction of substrate temperature results in less polymer unsaturation and fewer structures which form by hydrogen redistribution during the deposition process. These results support the hypothesis that deposition at low substrate temperatures leads to an increase in the proportion of precursor incorporated into the film without substantial fragmentation. Corroborative results from high resolution x-ray photoelectron spectroscopy (XPS) and assays for precursor functional groups by chemical derivatization reactions in conjunction with XPS are also presented. © 1992 John Wiley & Sons, Inc.     

Plasma homo- and copolymerizations of tetrafluoroethylene and chlorotrifluoroethylene

The plasma homo- and copolymerizations of tetrafluoroethylene (TFE) and chlorotrifluoroethylene (CTFE) in a capacitively coupled tubular reactor (TR) with external electrodes were studied by means of microgravimetry and FT-IR and XPS analyses. The deposition rates for CTFE/TFE plasma copolymers, as well as the ratios of IR absorbances at 1180 and 1225 cm⁻¹, and the XPS-derived Cl/C and F/C ratios, varied regularly with mol % CTFE in the feed, all of which results were dependent upon the rf power at which the plasma copolymerizations were conducted. The deposition rates for the plasma homopolymers of TFE (PPTFE) and CTFE (PPTCFE) depended markedly on rf power (W) and monomer molar flow rate (F). The F/C ratio for PPTFE was nearly independent of the composite parameter,W/FM (whereM is the monomer molecular weight), while for PPCTFE, the F/C ratio decreased significantly and the Cl/C ratio increased slightly with increase inW/FM. The percentage of carbon as CF₃ was 20–24% in PPTFE and 7–14% in PPCTFE. Plots of deposition rate versusW/FM for PPTFE and PPCTFE obtained in a TR differed considerably from corresponding plots in the literature for the same homopolymers prepared in a glass-cross or bell-jar reactor.     

Deposition of Gallium Nitride Thin Films by MOCVD in Microwave Plasma

The deposition of GaN thin films in a nitrogen–hydrogen microwave plasma using Ga(CH ₃ ) ₃ as a gallium precursor was investigated. The deposit was identified as stoichiometric GaN by XPS and XRD. The substrate was dielectrically heated in the microwave discharge and the substrate temperature was lower than that in usual thermal MOCVD. The NH radicals, which were the primary N-atoms precursors, and fragments of Ga(CH ₃ ) ₃ were identified in the plasma by OES. The NH radical formation and the decomposition of Ga(CH ₃ ) ₃ in the plasma may be one of the reasons for the lower deposition temperature of GaN. The position dependence of the substrate temperature showed similar tendency as the position dependence of the electron temperature. The plasma state contributes to the deposition of GaN thin films. The deposited GaN exhibited a wide optical band gap of 3.4eV. Material highly oriented along the c axis was detected in the deposit, and a PL spectrum which has the band head at about 450 mm was obtained.     

Substrate temperature effects on film chemistry in plasma depositions of organics. II. Polymerizable precursors

The influence of substrate temperature during plasma deposition on the chemistry of the organic films formed was examined. Plasma ionization of precursor gases that are polymerizable by conventional mechanisms was studied. Film chemistry was analyzed by x-ray photoelectron spectroscopy (XPS). Monomers that polymerize by a free radical mechanism [2-hydroxyethyl methacrylate (HEMA) and hexafluorobutadiene (HFB)] form more regular polymers (i.e. with less molecular rearrangement) by plasma deposition at low substrate temperatures than monomers that polymerize by ionic mechanisms [ethylene oxide (EO) and tetrahydrofuran (THF)]. In all cases, lowering the substrate temperature during deposition produces films with elemental composition virtually identical to that of the precursor gas. Comparison of high-resolution XPS spectra of the deposited films with those for model polymers suggests that functional groups in the monomers used to generate the plasma are incorporated to a greater extent at low substrate temperatures. The effect of plasma power on the degree of precursor structure retention obtained when reduced substrate temperatures are employed was also examined. Plasma deposition of HEMA at low substrate temperatures and low plasma power produces thin films which are, by core level XPS, indistinguishable from HEMA polymerized by conventional methods. EO and THF films coated at low substrate temperatures on glass, polyethylene, or polytetrafluoroethylene varied widely in surface chemistry due to differences in film uniformity. Film quality (uniformity) is enhanced for these low reactivity precursors by pretreating substrates with an argon plasma. © 1992 John Wiley & Sons, Inc.     

Deposition conditions influence the postdeposition oxidation of methyl methacrylate plasma polymer films

Plasma polymer films were deposited from methyl methacrylate (MMA) vapor under various plasma conditions and XPS and FTIR used to study the changes to the compositions of the films as they were stored in air for longer than 1 year. The plasma power input per monomer mass unit (W/FM) markedly affected the composition of the freshly deposited MMA plasma polymers. A low value of W/FM led to a high degree of retention of the original monomer structure, whereas a high value of W/FM resulted in substantial monomer fragmentation and the formation of a partially unsaturated material considerably different to conventional PMMA. As the MMA plasma coatings were stored in ambient air after fabrication, all showed spontaneous oxidative changes to their composition, but the extents and reaction products differed substantially. Deposition at low W/FM led to moderate oxidative changes, whereas high power led to a pronounced increase in the oxygen content over time and resulted in a wide range of carbon–oxygen functionalities in the aged material. As the initial compositions/plasma deposition conditions thus influenced the oxidative postdeposition reactions, MMA plasma polymers deposited under different conditions not only varied in their initial composition but then became even more diverse as they aged. © 1998 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 36: 985–1000, 1998     

X-ray photoelectron spectroscopy study of neodymium niobate and tantalate precursors and thin films

Neodymium niobate NdNbO₄ (NNO) and tantalate NdTaO₄ (NTO) thin films (~100 nm) were prepared by sol-gel/spin-coating process on Al₂O₃ substrate with LaNbO₄/PbZrO₃ interlayer and annealing at 1000°C. Surface chemistry was investigated by X-ray photoelectron spectroscopy (XPS). The core-level XPS studies of sol-gel NNO and NTO were performed for the first time. The binding energy differences Δ(O―Nb) and Δ(O―Ta) were used to characterize average energies of Nb―O bonding in NNO (322.9 eV) and Ta―O bonding in NTO (504.2 eV). The XPS demonstrated single valence state of Nd (Nd³⁺) in precursors. Nd concentration (at. %) decreases from 22% in precursors to 7% in films considering the substrate contains C, Al, Si, Pb, and Zr elements (37%) at Nb or Ta (5%) and O (51%). The X-ray diffraction analyses verified formation of the monoclinic (M-NdNbO₄ or M′-NdTaO₄), orthorhombic (O-NdNbO₄) and tetragonal (T-NdTaO₄) phases in precursors and films. Single valence state of Nd³⁺ was confirmed in these films designed for the application in environmental electrolytic thin film devices.     

Synthesis,characterization, and thermal properties of novel silicon 1,1,3,3-tetramethylguanidinate derivatives and use as single-source chemical vapor deposition precursors

A series of chemical vapor deposition (CVD) precursors have been synthesized by a single-step reaction of 1,1,3,3-tetramethylguanidine and a variety of silicon chlorides. The structures of the 1,1,3,3-tetramethylguanidinate-based compounds were verified by ¹H NMR, ¹³C NMR, XPS, EI-MS, and elemental analysis. The thermal stability, transport behavior, and vapor pressures of these compounds were evaluated by simultaneous thermal analyses (STA). These compounds are highly stable and those in liquid form are very volatile. Silicon carbonitride (SiCN) thin films were prepared by using bis (tetramethylguanidine)-dimethyl-silane as the precursor in helicon wave plasma chemical vapor deposition (HWP-CVD). The properties of the films were investigated by SEM, AFM, and XPS. The results showed that the films have good uniformities, low friction coefficient, and high hardness, enabling the films for fabrication of semiconductor devices.     

Ultrasound‐assisted oxidation of tungsten in oxygen plasma: the early stages of the oxide film growth

The effect of ultrasonic vibrations applied in situ on the formation of W–WO interface during the exposure of a pure tungsten foil to a low‐temperature oxygen plasma is investigated by photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). The tungsten surface was exposed to oxygen plasma at different time intervals and the evolution of the interface formation was studied by angle‐resolved XPS. We show that oxidation without ultrasonic vibrations leads to the formation of a thin oxide film whose growth kinetics is governed by an island growth mechanism. On the other hand, oxide growth in the presence of ultrasonic treatment (UST) appears to follow a layer‐by‐layer growth mode with a distinctly sharper W–WO interface. TOF‐SIMS analysis in this case revealed a reduced amount of water bonded in the film, which suggests an increase in the film's packing density. Copyright © 2006 John Wiley & Sons, Ltd.     

A secondary ion mass spectrometric study of thallium oxide thin films grown via metal organic chemical vapour deposition

Within a comprehensive programme including synthesis via metal organic chemical vapour deposition (MOCVD) and characterization of inorganic compounds and materials of possible interest in technologies based on thin films, results concerning the deposition of metal oxides by means of volatile organometal precursors are reported. In particular, thallium oxide films obtained by the MOCVD technique and commercial powders of Tl₂O₃ and Tl₂O adsorbed on several metal substrates (stainless steel, Si, Cu, Mo, Pt) were studied by secondary ion mass Spectrometry (SIMS) under ion beam bombardment at different ion energies. The positive- and negative-ion mass spectra exhibit typical isotopic patterns of several ionic species produced by interesting interfacial reactions, and the analysis of their relative abundances provides a measure of oxide reactivity towards different substrates. SIMS measurements of metal substrates were also performed. The ability and limits of SIMS in the reactivity study of thallium oxide powders and films and, in addition, in the identification of reaction products evidencing impurity species that, in turn, can be ascribed to the substrates or to the precursors used for the oxide synthesis is pointed out.     

Structure,Composition, Mechanical,and Tribological Properties of BCN Films Deposited by Plasma Enhanced Chemical Vapor Deposition

In this work thin BCN films were deposited by plasma enhanced chemical vapor deposition (PECVD) using chloridic precursors. Through adjusting the BCl₃ content in the inlet gas mixture the chemical composition of the deposited films was changed from carbon rich to boron rich. Based on optical emission spectroscopy (OES) measurements, a correlation between film composition and precursor species concentration in the plasma was established. The films were amorphous as detected by grazing incidence X-ray diffraction (GIXRD). The hardness and the elastic modulus have maximal values of 25.5±1.2 and 191±6 GPa, respectively, for the films with a boron concentration of 45.2 at.%. GIXRD data suggest that a depletion in boron content may initiate the formation of graphitic domains in the amorphous matrix. The observed degradation of the mechanical properties is associated with the graphitization. The tribological behavior was studied with a tribometer operated in pin-on-plate configuration at the temperatures 25 and 400°C. The wear mechanisms were discussed with respect to the formation of a boric acid surface layer which was detected by reflection electron energy loss spectroscopy (REELS) analysis.     

Deposition of SiO2-Like Films by HMDSN/O2 Plasmas at Low Pressure in a MMP-DECR Reactor

The effects of process parameters such as O₂/HMDSN (hexamethyldisilazane) ratio, microwave discharge power and deposition pressure on the growth rate, chemical bonding nature, and refractive index of thin films deposited by microwave plasma from HMDSN with oxygen, have been investigated. The plasma was created in a Microwave Multipolar reactor excited by Distributed Electron Cyclotron Resonance. The films were deposited at room temperature and characterized by Fourier Transform Infrared spectroscopy and ellipsometry. Growth rate increased with the discharge power P or the deposition pressure but decreased significantly with increasing O₂/HMDSN ratio. A large change in the film composition was observed when the O₂/HMDSN ratio was varied: films deposited with only HMDSN precursor are polymer-like but as the O₂/HMDSN ratio increased, organic groups decreased. For relative pressure values over 70%, deposited films are SiO₂-like with refractive index values close to those found for thermal silicon dioxide.     

Plasma deposition and surface characterization of oligoglyme, dioxane, and crown ether nonfouling films

Plasma-deposited PEG-like films are emerging as promising materials for preventing protein and bacterial attachment to surfaces. To date, there has not been a detailed surface analysis to examine the chemistry and molecular structure of these films as a function of both precursor size and structure. In this paper, we describe radio-frequency plasma deposition of a series of short-chain oligoglymes, dioxane, and crown ethers onto glass cover slips to create poly(ethylene glycol)-like coatings. The resultant films were characterized by X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), dynamic contact angle goniometry, and radiolabeled fibrinogen adsorption. Detailed analysis of the high-mass (120-300 m/z) TOF-SIMS oligoglyme film spectra revealed six classes of significant fragments. Two new models are proposed to describe how these fragments could be formed by distinct film-building processes: incorporation of intact and fragmented precursor molecules. The models also provide for the incorporation of hydrocarbon--a species that is not present in the precursors but is evidenced in XPS C(1s) spectra of these films. Two additional models describe the effects of incorporating intact and fragmented cyclic precursors.     

Study of the crystallization pathway of Na0.5Bi0.5TiO3 thin films obtained by chemical solution deposition

Na_0.5Bi_0.5TiO₃ (NBT) thin films were fabricated by a chemical solution deposition (CSD) method. A route involving the reaction between sodium and bismuth acetates and titanium n-butoxide was used to synthesise the different precursor solutions. The thermal decomposition and crystallization pathways of different modified precursors have been studied by thermal analysis and X-ray diffraction techniques. As a consequence of the modification of the precursor solutions and their different thermal behaviour, the nucleation of the stable perovskite phase happens at different temperatures depending on each case but is found to be at temperatures as low as 500 °C. For the thin film processing, the drying and pyrolysis temperatures were chosen according to the thermogravimetric data to minimize the strain resulting from the shrinkage of the film during the elimination of solvents and organic ligands. The crystallization process was studied and the experimental results are discussed in terms of structural, microstructural and electrical features investigated by field-emission scanning electron microscopy, atomic force microscopy in tapping and piezo-force modes and X-ray diffraction.     

Quantitative analysis of an organic thin film by XPS,AFM and FT‐IR

We report the characterization of Firpic (iridium(III)bis[4,6‐di‐fluorophenyl]‐pyridinato‐N,C²,]picolinate) organic thin film prepared by vacuum deposition to provide a systematic route to organic film quantification. To analyze the characteristics of thin Firpic films on a Si substrate, various techniques such as XPS, Fourier transform infra‐red (FT‐IR) spectrometer, and atomic force microscopy (AFM) are utilized. The Firpic films remain stable without surface morphological or compositional change during deposition and after exposure to X‐ray irradiation or atmospheric environment, for which qualities these films are believed to be an ideal platform as a pure organic thin film. The monotonic increases in FT‐IR and XPS intensities with film thickness are matching well with each other. In particular, from the XPS intensity analysis, the relative atomic sensitivity factors of the present system, electron attenuation length, and molecular density in the organic thin film can be evaluated. Copyright © 2011 John Wiley & Sons, Ltd.     

Influence of Vapor Phase Pretreatments of Epoxy Surfaces on the Nucleation of MOCVD Copper Thin Films

Vapor phase pretreatments of epoxy composite material reinforced with carbon fibers were carried out prior to the growth of Cu thin films by metal-organic chemical vapor deposition (MOCVD) using Cu (hfa)(COD) as copper precursor. These dry surface oxidation processes include H₂O/UV, O₂/UV and O₂/Plasma treatments. Oxygen plasma method is the most efficient to oxidize the surface and it has the greatest effect to improve the wettability of epoxy samples. As a consequence, the higher hydrophilicity of the plasma-modified epoxy surface induces a higher nucleation density in the Cu film. Furthermore, this treatment reduces drastically the induction period observed for the growth of the metal. Even though the O₂/UV pretreatment incorporates almost the same amount of oxygen in the epoxy surface than the plasma treatment, the functional groups are different, as revealed by XPS analyses, and the surface is less hydrophilic. Correlations between oxidation, wettability and nucleation density of the Cu films are discussed.     

Coordination Chemistry of Aluminum,Gallium, and Indium at Transition Metals

The current upswing in the interest in organoelement chemistry of Group 13 metals is attributed not least to the establishment of the coordination chemistry of R_aE fragments (E=Al, Ga, In; a=1, 2) at d-block metals (M). Recently the availability of low-valent organoelement compounds as building blocks for synthesis has substantially enriched the structure chemistry of this class of compounds. The M–E bonding conditions and the question of the significance of M(d_π)-E(p_π) backbonding as well as potential applications in materials science, for example, as single-source precursors for the deposition of thin intermetallic films by chemical vapor deposition, are discussed.     

Chemical Solution Deposition of ZnO Thin Films by an Aqueous Solution Gel Precursor Route

An aqueous chemical solution deposition method was used to prepare thin films of ZnO on SiO₂/Si (1 1 1) substrates. Starting from an aqueous solution of Zn acetate, citric acid and ammonia, very thin films could be deposited by spin coating. Heating parameters, necessary for thin film annealing, were determined using FTIR experiments on dried gel precursors, heated up to different temperatures. The morphology and the thickness of the films were investigated by SEM. It is found that homogeneous thin films with grain sizes of about 20 nm are formed. XRD experiments show that there is an indication that the films, crystallized at 500°C, exhibit preferential grain growth along the c-axis.     

Effect of Pt loading on the photocatalytic reactivity of titanium oxide thin films prepared by ion engineering techniques

Platinum-loaded titanium oxide thin-film photocatalysts were prepared by using an ionized cluster beam (ICB) deposition method and a RF magnetron sputtering (RF-MS) deposition method as dry processes. From the results of the photocatalytic oxidation of acetaldehyde with O₂ under UV light irradiation, small amounts of Pt loading (less than 10 nm film thickness) were found to dramatically enhance the photocatalytic reactivity. However, when TiO₂ thin films were loaded with relatively larger amounts of Pt (more than 30 nm as the film thickness), the photocatalytic reactivity became lower than for the pure TiO₂ thin films. Moreover, investigations of the ratio of Pt loaded onto the surface of the thin film catalysts by XPS measurements revealed that the small amounts of Pt loaded exist as very small clusters working to efficiently enhance the charge separation, whereas, large amounts of Pt covers the entire surface of the TiO₂ thin films, resulting in a decrease of the photocatalytic reactivity.     

TiOx Films Deposited by Plasma Enhanced Chemical Vapour Deposition Method in Atmospheric Dielectric Barrier Discharge Plasma

The plasma enhanced chemical vapour deposition method applying atmospheric dielectric barrier discharge (ADBD) plasma was used for TiO_x thin films deposition employing titanium (IV) isopropoxide and oxygen as reactants, and argon as a working gas. ADBD was operated in the filamentary mode. The films were deposited on glass. The films?? chemical composition, surface topography, wettability and aging were analysed, particularly the dependence between precursor and reactant concentration in the discharge atmosphere and its impact on TiO_x films properties. Titanium in films near the surface area was oxidized, the dominating species being TiO₂ and substoichiometric titanium oxides. The films exhibited contamination with carbon, as a result of atmospheric oxygen and carbon dioxide reactions with radicals in films. No relevant difference of the film surface due to oxygen concentration inside the reactor was determined. The films were hydrophilic immediately after deposition, afterwards their wettability diminished, due to chemical reactions of the film surface and chemical groups involved in the atmosphere.     

Analysis of thin films and molecular orientation using cluster SIMS

A study of phenylalanine films of different thicknesses from submonolayer to 55 nm on Si wafers has been made using Bi_n⁺ and C₆₀⁺ cluster primary ions in static SIMS. This shows that the effect of film thickness on ion yield is very similar for all primary ions, with an enhanced molecular yield at approximately 1 monolayer attributed to substrate backscattering. The static SIMS ion yields of phenylalanine at different thicknesses are, in principle, the equivalent of a static SIMS depth profile, without the complication of ion beam damage and roughness resulting from sputtering to the relevant thickness. Analyzing thin films of phenylalanine of different thicknesses allows an interpretation of molecular bonding to, and orientation on, the silicon substrate that is confirmed by XPS. The large crater size for cluster ions has interesting effects on the secondary ion intensities of both the overlayer and the substrate for monolayer and submonolayer quantities. This study expands the capability of SIMS for identification of the chemical structure of molecules at surfaces. © Crown copyright 2010.