AlAs/InSe范德华异质结构的光学和可调谐电子特性

由不同二维(2D)材料相互堆叠形成异质结构已成为目前的研究热点, 使用第一性原理的计算方法探究了AlAs/ InSe异质结构的几何结构、电子性能和光学性质. 结果表明, AlAs/InSe异质结构具有典型的Type-II型能带排列并且拥有着1.28 eV的间接带隙. 通过调节层间距或施加外部电场和应变, 可以有效地改变异质结构的带隙值. 有趣的是, 当应用5 V/nm的电场时, 异质结构实现了从Type-II向Type-I的转变. 此外, 与孤立单层相比, AlAs/InSe异质结构的吸光度明显提高, 特别是在紫外区域. 表明新型的二维AlAs/InSe异质结可以作为光电材料和紫外探测器件的有力候选者.     

构建2D-2D TiO2纳米片/层状WS2异质结用以增强可见光响应光催化活性

自Fujishima等首次报道以来, TiO_2作为一种重要的光催化剂引起了人们的广泛关注.迄今为止,研究人员已经开发出了各种形貌的具有不同晶型结构的TiO_2,并用于光催化降解有机污染物.然而, TiO_2的宽禁带(3.2 eV)使其难以被可见光激活,导致对太阳光的利用效率低下.而且,在光催化反应中,低的量子效率无法满足实际应用.因此,开发具有可见光响应的高催化活性的TiO_2基催化剂具有重要意义.集成复合材料、纳米材料和界面的优势构建纳米复合材料已成为提高TiO_2光催化活性的重要策略. WS_2具有典型的类石墨烯层状结构和窄的带隙(1.35 eV),且其导带高于TiO_2的导带,适合作为助催化剂修饰TiO_2,使其具备可见光响应光催化活性.本文采用一步水热法,以二维(2D)TiO_2纳米片作基质材料,直接在其表面原位生长WS_2层,制得了2D-2D TiO_2纳米片/层状WS_2(TNS/WS_2)异质结. XRD及Raman结果表明,层状WS_2与TiO_2纳米片紧密结合在一起,且两者之间形成了W=O键.TEM结果显示,层状WS_2以面-面堆叠方式均匀地包覆在TiO_2纳米片表面,包覆层数约为4层.光催化性能测试结果表明,可见光照射下, TNS/WS_2异质结对RhB的光催化降解能力高于原始TiO_2纳米片和层状WS_2,光催化活性得到明显增强.紫外可见光谱试验结果显示,层状WS_2的引入极大地增强了异质结的光吸收性能. PL光谱测试表明, TNS/WS_2异质结具有更高效的载流子分离效率.为了进一步证实是光吸收性能的提升还是载流子分离效率的增强对光催化性能提起其主要作用,本文还研究了3D-2D TiO_2空心微球/层状WS_2(THS/WS_2)复合材料.结果表明, TNS/WS_2异质结比THS/WS_2复合材料具有更高效的光生电子和空穴的分离能力.从而证明了TiO_2纳米片与层状WS_2之间完美的2D-2D纳米界面和紧密的界面结合,显著增加了载流子分离效率,因此光催化活性得到明显提高.为了研究TNS/WS_2异质结光催化剂的光催化机理,采用重铬酸钾、草酸铵、叔丁醇和对苯醌作自由基猝灭剂进行了自由基捕捉剂实验.结果表明,空穴在RhB降解过程中起主要作用,超氧自由基起次要作用.基于自由基猝灭实验结果和带隙结构分析,提出了TNS/WS_2异质结对RhB的光催化机理为双转移光催化机理.可见,界面异质结工程化可能是制备高效和环境稳定的光催化剂的新思路     

单层MoS2在合金化及应力调控下光催化裂解水产氢的理论研究

基于密度泛函的第一性能原理计算方法研究了单层MoS_2分别与MoSe_2、MoTe_2、WS_2进行合金化,以及加入2%应力条件下,对光催化裂解水性能的影响。计算结果表明,单层MoS_2通过与MoSe_2、MoTe_2、MoWS_2进行合金化,并施加压应力两种手段进行调控,可使带隙变大的同时,提高CBM(conduction band minimum)带边位置,从而提高光催化分解水的效率。通过能带和态密度的计算表明,合金元素原子形成的不是孤立能级而是能带,对载流子寿命影响小。     

石墨烯/MoS2异质结的界面相互作用及其肖特基调控的理论研究

本文基于第一性原理方法,系统研究了外电场对石墨烯/MoS₂范德瓦耳斯异质结界面相互作用及其电子性质的影响.计算结果表明石墨烯和MoS₂之间通过微弱的范德瓦耳斯力结合形成异质结,石墨烯/MoS₂异质结的能带基本上是单层石墨烯和单层MoS₂能带结构的简单叠加并形成了N型肖特基势垒;由于异质结的石墨烯层的电子向MoS₂层转移,导致石墨烯表面带正电,MoS₂表面带负电,在异质结内部形成了方向由石墨烯指向MoS₂的内建电场.此外,对异质结施加不同强度的负电场时,体系的接触类型逐渐由N型肖特基接触类型转变为欧姆接触;对异质结施加不同强度的正电场时,体系的P型肖特基势垒呈降低趋势,体系的N型肖特基势垒呈现先缓慢升高再急剧下降的特点,在电场强度提高至5.0 V·nm^-1附近时,接触类型由N型肖特基接触转变为P型肖特基接触.此项工作将对相关二维场效应晶体管的设计提供参考.     

一维碳纳米管/二维二硫化钼混合维度异质结的原位制备及其电荷转移性能

一维(1D)材料与二维(2D)材料的结合可形成独特的混合维度异质结,其在继承2D/2D范德瓦尔斯异质结的独特物性之外,还具有丰富的堆叠构型,为进一步调控异质结的结构及性能提供了新的可操控自由度。p型1D单壁碳纳米管(SWCNT)与n型2D二硫化钼(MoS₂)的结合,为调控异质结的能带结构及器件性能提供了丰富的选择。本文直接在高密度、手性窄分布的SWCNT定向阵列及无序薄膜表面原位生长MoS₂,制备出高质量1D SWCNT/2D MoS₂混合维度异质结。深入分析形核点的表面形貌与结构,提出了“吸附-扩散-吸附”生长机制,用于解释混合维度异质结的生长。利用拉曼光谱分析,证实SWCNT与MoS₂间存在显著的电荷转移作用,载流子可在界面处快速传输,为后续基于此类1D/2D异质结的新型电子及光电器件的设计与制备提供了新思路。     

单层，少层和块状WS_2薄膜中声子位移随温度的变化（英文）

近年来,二维过渡金属二硫化物(TMD)由于其良好的物理和化学性质而引起人们的关注。其中,石墨烯由于其高达200000 cm~2·V~(-1)·s~(-1)高电子迁移率得到了深入研究。由于石墨烯没有带隙,因此基于石墨烯的器件难以实现高的电流开关比。对于二维过渡金属二硫化物例如MoS_2、MoSe_2、WSe_2和WS_2,这些材料可以根据层数来调节的带隙。其中,单层和多层MoS_2薄膜已进行了广泛深入研究。已经有人实现具有优异电学性能的基于MoS_2的场效应晶体管(FET)。与MoS_2、MoSe_2和MoTe_2相比,WS_2具有更低的面内电子质量,这表明基于WS_2的FET具有更高的载流子迁移率或更高的输出电流。与MoS2相比,WS_2缺乏系统的研究,需要更多的研究工作来进一步发掘基于WS_2的场效应晶体管的潜能。因此,我们使用机械剥离法来制备WS_2晶体单层(1L),少层(FL)和块状WS_2薄膜。使用3M透明胶带转移WS_2薄膜,并且使用514 nm激光器对1L、FL和块状WS_2膜进行了变温的拉曼研究。随着膜厚度增加到块状,对于1L WS_2,A_(1g)(Γ)和E_(2g)~1(Γ)模式分别显示蓝移和红移。此外,当拉曼振动模式在E12g(Γ)和A1g(Γ)之间交换时,"交叉"温度被识别为1L、FL和块状WS_2膜。与MoS2相比,随着膜厚度的变化,WS_2在E_(2g)~1(Γ)和A_(1g)(Γ)之间表现出较小的频率变化(Δ),并且从拉曼峰值位置随温度变化来看,WS_2比MoS_2少一个量级。这项工作为基于WS_2的器件设计提供了物理指导。     

(111)应变对正交相Ca_2P_(0.25)Si_(0.75)能带结构及光学性质影响的理论研究

采用第一性原理平面波贋势方法对(111)应变下正交相Ca2P0.25Si0.75的能带结构及光学性质进行模拟计算.计算结果表明:(111)面在晶格发生100%~104%张应变时,带隙随着应变增加而增大;在晶格发生104%~112%压应变时,带隙随着张应变的增加而减小;88%~100%压应变时,带隙随着压应变的增加而减小;当压应变达到88%后转变为导体.当施加应变后光学性质发生显著的变化,随着压应变的增加静态介电常数、折射率逐渐减小,张应变则反之.施加压应变反射向高能方向偏移,施加张应变反射向低能方向偏移.施压应变吸收谱增大,施加张应变吸收谱变小.综上所述,应变可以改变Ca2P0.25Si0.75的电子结构和光学常数,是调节Ca2P0.25Si0.75光电传输性能的有效手段.     

TiO2/TiN纳米管异质结用于光电催化CO2还原:氮辅助活性氢机制(英文)

利用太阳能将CO₂转换为高附加值的化学品是解决化石燃料消耗过快与CO₂排放过度问题的可行性方案.光电催化CO₂还原可以模拟自然光合作用将CO₂还原为多碳产物(C₂₊).然而,光电催化剂的带隙与太阳辐射光谱不匹配以及载流子的快速复合是限制人工光合作用效率的关键因素.前期研究表明,缺陷工程可有效地增加催化剂活性位点,减小半导体的带隙并增强对光子的捕获能力;而异质结的构筑则可有效提升载流子的分离效率.因此,构建具有较好可见光响应的高效半导体异质结催化剂有望实现催化材料对CO₂还原能力和产物选择性的提升.本文通过对金属钛板进行电化学阳极氧化,氨气气氛煅烧得到Ti N,然后原位进行部分氧化构筑出结构新颖的Ti O₂/Ti N纳米管异质结材料,再进行配体和钯量子点修饰,得到更加高效的催化电极材料Pd/R-Ti O₂/TiN,并在三电极系统中研究了其光电催化CO₂还原的性能.通过扫描隧道电子显微镜、透射电...     

1D/2D TiO2/ZnIn2S4S型异质结光催化剂及其高效制氢性能

通过半导体催化剂利用太阳能分解水制氢被认为是解决人类面临的环境问题和能源危机的有效途径.在众多的半导体光催化剂中,TiO₂由于其良好的光化学稳定性、无毒性、丰富的形貌以及低廉的价格,在光催化制氢领域备受关注.然而TiO₂的内在缺陷,如较宽的带隙、较窄的光响应范围,光生电子空穴对的快速复合,极大限制了其太阳能制氢效率.构建异质结结构被认为是解决以上问题的一个有效方法,通过将TiO₂与另一个半导体复合可以提升催化剂对太阳光的吸收范围,也可降低光生电子空穴对的复合速率.但构建一个成功的异质结结构不仅要满足上述的要求,还需要保留异质结催化剂体系中光生电子和空穴的氧化还原能力.研究表明,S型异质结是将两个具有合适能带结构的半导体进行耦合,由于费米能级的差异,两个半导体间将发生电子转移,从而引起能带弯曲并形成内建电场.光照条件下,具有较弱还原能力的光生电子在内建电场和能带弯曲的作用下与较弱氧化能力的光生空穴复合,实现异质结催化剂体系中各个半导体内部光生载流子有效分离的目标,同时保留了异质结催化剂体系中较强氧化能力和较强还原能力的光生电子和空穴,进而实现光催化活性的提高.本文采用水热合成方法,将具有更强还原能力和可见光响应特性的半导体(ZnIn₂S₄)原位生长在TiO₂纳米纤维表面,构建了1D/2DTiO₂/ZnIn₂S₄S型异质结光催化剂.最优比例的TiO₂/ZnIn₂S₄复合材料表现出优越的光催化制氢活性(6.03mmol/h/g),分别是纯TiO₂和纯ZnIn₂S₄制氢活性的3.7倍和2倍.TiO₂/ZnIn₂S₄复合材料光催化活性的提高可以归因于紧密的异质结界面、光生载流子的有效分离、丰富的反应活性位点以及增强的光吸收能力.通过原位XPS和DFT计算研究了异质结内部光生电子的转移机制.结果表明,在光照条件下电子由TiO₂向ZnIn₂S₄迁移,遵循了S型异质结内部电子的转移机制,实现了TiO₂和ZnIn₂S₄内部光生载流子的有效分离,同时保留了具有较强还原能力的ZnIn₂S₄价带电子和较强氧化能力的TiO₂导带空穴,从而显著提升光催化制氢效率.综上,本文制备的TiO₂/ZnIn₂S₄S型异质结光催化剂很好地克服了TiO₂在光催化制氢领域所面临的诸多障碍,为设计和制备高效异质结光催化剂提供了新的思路.     

Fe原子吸附对单层WS_2结构和性质的影响

本文采用基于密度泛函理论(DFT)的第一性原理方法研究了Fe原子吸附对单层WS_2结构和性质的影响。研究结果表明:Fe原子吸附在W原子的顶位最稳定,相应的原子吸附能为1.84 eV。Fe与衬底间的相互作用削弱了紧邻W―S键,使其键长增大0.011 nm。由于衬底原子的影响,Fe原子d轨道的电子重新分布,形成了2μB左右的局域原子磁矩。在低覆盖度下(0.125和0.25 ML),磁性作用以超交换作用为主,铁磁序不稳定。而在高覆盖度下(0.5和1.0 ML),Fe原子间距减小,磁性作用以RKKY作用为主,铁磁序稳定。电子结构的计算结果显示,在高覆盖度下,Fe/WS_2结构在费米能级处的电子自旋极化率等于100%。自旋向上与向下通道分别为间接带隙的半导体和金属。在1.0 ML覆盖度下,自旋向上的禁带宽度约为0.94 eV。这说明Fe原子吸附可以将直接带隙的WS_2半导体转变成半金属,形成一种潜在的自旋电子器件材料。     

单层，少层和块状WS2薄膜中声子位移随温度的变化

Two-dimensional transition metal disulfides (TMDs) have recently attracted significant research attention due to their rich physical and chemical properties. Graphene has also been studied intensively due to its high electron mobility of ~200000 cm²·V⁻¹·s⁻¹. Since there is no band gap, it is difficult for a graphene-based device to achieve high current on/off ratio. For TMDs, such as MoS₂, MoSe₂, WSe₂, and WS₂, the band gaps of these materials can be adjusted according to the number of layers. Since TMD has the advantage of suppressing source-drain tunneling current in an ultra-short transistor and offering superior immunity to short-channel effects, it is also attractive for use as a channel material in Si complementary metal oxide semiconductor (CMOS) devices larger than 22 nm. Among them, MoS₂ in single-layer and multi-layer films have been intensively researched for many years. MoS₂-based field effect transistors (FETs) with excellent electrical properties have been reported. WS₂ has lower in-plane electronic mass than MoS₂, MoSe₂, and MoTe₂, and therefore has potential for higher carrier mobility or higher output current for WS₂-based FETs. Experimental research on WS₂ is limited compared to MoS₂, and more work is needed to further exploit the full potential of WS₂-based FETs. Therefore, the electron-phonon interaction and vibration properties of WS₂ used in nano-electronic applications and FETs must be investigated. To this end, mono-layer (1L), few-layer (FL), and bulk WS₂ films were prepared using mechanical exfoliation from a WS₂ crystal. 3M scotch-tape was used for transferring the WS₂ films. Detailed temperature-dependent Raman study on 1L, FL, and bulk WS₂ films has been conducted using a 514-nm excitation laser. Raman spectroscopy, as an effective and non-destructive approach for phonon vibration study, has been used to evaluate TMDs. The Raman spectra reveal much useful information on the test sample in terms of peak position and spectral shape change. With the film thickness increasing to bulk, the A_1g(Γ) and E_2g¹(Γ) modes show blue-shift and red-shift, respectively, with respect to 1L WS₂. Moreover, when the dominant Raman vibration modes swaps between E_2g¹(Γ) and A_1g(Γ), the "cross-over" temperature was identified for 1L, FL, and bulk WS₂ films. WS₂ shows smaller frequency change Δ between the E_2g¹(Γ) and A_1g(Γ) modes than MoS₂, with varying film thickness. The temperature coefficient of the Raman peak position was one magnitude lower for WS₂ than MoS₂, implying that WS₂ has better thermal stability than MoS₂. The results of this systematic study provide a physical guidance for WS₂-based device design.     

Insight into the electronic,optical, thermodynamic,and thermoelectric properties of novel chalcogenides: An ab initio study

Ternary chalcogenides with direct band gaps are remarkable for being used in many optoelectronic applications. We investigated for structural, electronic, optical, and transport characteristics of new Ba₂CdCh₃ (Ch = S, Se, Te) semiconductors using the full-potential linearized augmented plane wave (FP-LAPW) approach. The band structures of these compounds confirm a direct type of band gap. The phonon dispersion plots along with the predicted negative formation energies suggest these compounds to be thermodynamically stable. Additionally, important optical characteristics were computed and thoroughly explained. The different ELF spectra were calculated in which strong peak correlate precisely with plasma resonance. Moreover, we also explored the thermodynamic characteristics of the ternary systems by employing the quasi-harmonic Debye model. These compounds were also suitable for thermoelectric applications based on the detailed discussion of the computed significant thermoelectric properties. In general, the advancement of various and promising semiconducting devices and their applications will be supported by the present study.     

黄铜矿型铜基硫属半导体材料的电子结构和光学性质

采用基于赝势平面波基组的密度泛函理论方法, 对具有黄铜矿结构的6种CuXY₂(X=Ga, In; Y=S, Se, Te)晶体的构型、 电子结构、 线性及二阶非线性光学性质进行了研究. 结果表明, 6种CuXY₂均为直接带隙半导体, 具有相似的能带结构. 当X原子相同时, 随着Y原子按S→Se→Te依次改变时, 体系的静态介电常数、 静态折射率和静态倍频系数(d₃₆)依次递增. 在占据带中, 位于价带顶附近的能带对体系倍频效应影响最为显著, 该系列化合物的能带主要成分为Cu的3d轨道和Y原子价层p轨道; 对于空能带, 对倍频系数影响较大的是以X原子价层p轨道为主要成分的能带. 6种晶体中, CuInSe₂晶体具有较高的光电导率并对太阳光具有较好的吸收性能. 综合考虑体系的双折射率和倍频效应等因素, CuGaS₂和CuGaSe₂ 2种晶体在二阶非线性光学领域具有潜在的应用价值.     

Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions

The typical two‐dimensional (2D) semiconductors MoS₂, MoSe₂, WS₂, WSe₂ and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono‐elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first‐principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band‐gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.     

基于多层二硒化钨的高性能场效应晶体管的实验优化和理论模拟

采用微机械剥离法制备了基于不同厚度的高质量WSe₂纳米片的场效应晶体管(WSe₂-FETs), 研究了其性能的影响因素. 通过调控WSe₂纳米片及介电层的厚度、 测试温度及退火处理等, 结合理论模拟分析, 获得了WSe₂-FETs的最佳电学性能. 最终, 基于7层WSe₂纳米片的场效应晶体管表现出最优异的电学性能, 室温下载流子迁移率可达93.17 cm²·V^?1·s^?1; 在78 K低温下, 载流子迁移率高达482.78 cm²·V^?1·s^?1.     

Two Dimensional Materials Beyond MoS2: Noble‐Transition‐Metal Dichalcogenides

The structure and electronic structure of layered noble‐transition‐metal dichalcogenides MX₂ (M=Pt and Pd, and chalcogenides X=S, Se, and Te) have been investigated by periodic density functional theory (DFT) calculations. The MS₂ monolayers are indirect band‐gap semiconductors whereas the MSe₂ and MTe₂ analogues show significantly smaller band gap and can even become semimetallic or metallic materials. Under mechanical strain these MX₂ materials become quasi‐direct band‐gap semiconductors. The mechanical‐deformation and electron‐transport properties of these materials indicate their potential application in flexible nanoelectronics.     

二元化合物半导体的能带结构

本文用LCBOMO法计算了属于元素半导体和AB型、AB₂型化合物半导体的十种共价结构的能带。所得结果说明:它们的禁带宽度Eg都可统一地表为键能和邻键间共轭积分的线性函数,与共价结构的形式无关。给出许多文献用键性质归纳Eg数值规律的理论基础。     

硫硒化亚锗光电探测器的制备及光电性能

采用微机械剥离法得到横向尺寸约为12 μm的硫硒化亚锗(GeS_0.5Se_0.5)纳米片, 以铬/金(Cr/Au)为接触电极, 首次制备得到GeS_0.5Se_0.5光电探测器, 并探究了其光电性能. 结果表明, 剥离所得的纳米片具有良好的结晶质量, 硫和硒在纳米片中分布均匀, 光学带隙为1.3 eV; 该光电探测器在515 nm光激发下最大探测能力达到4.52×10¹³ Jones, 最高响应度为1.15×10⁴ A/W, 外部量子效率为2.79×10⁶%, 展现出非常高效、 快速和稳定的光响应能力.     

Two‐Dimensional Haeckelite NbS2: A Diamagnetic High‐Mobility Semiconductor with Nb4+ Ions

In all known Group 5 transition‐metal dichalcogenide monolayers (MLs), the metal centers carry a spin, and their ground‐state phases are either metallic or semiconducting with indirect band gaps. Here, on grounds of first‐principles calculations, we report that the Haeckelite polytypes 1 S ‐NbX₂ (X=S, Se, Te) are diamagnetic direct‐band‐gap semiconductors even though the Nb atoms are in the 4+ oxidation state. In contrast, 1 S ‐VX₂ MLs are antiferromagnetically coupled indirect‐band‐gap semiconductors. The 1 S phases are thermodynamically and dynamically stable but of slightly higher energy than their 1 H and 1 T ML counterparts. 1 S ‐NbX₂ MLs are excellent candidates for optoelectronic applications owing to their small band gaps (between 0.5 and 1 eV). Moreover, 1 S ‐NbS₂ shows a particularly high hole mobility of 2.68×10³ cm² V⁻¹ s⁻¹, which is significantly higher than that of MoS₂ and comparable to that of WSe₂.