Metal Infiltration into Biomaterials by ALD and CVD: A Comparative Study

Atomic layer deposition (ALD) is a subset of chemical vapor deposition (CVD) and both use very similar chemistry. Recently, it has been reported that ALD has the potential to realize a new design paradigm of bioinorganic materials through metal infiltration, which in nature has been employed as a hardening strategy for many tissues in diverse biological organisms. Herein, using a spider dragline silk and a collagen membrane as targets, we have performed a comparative study to elucidate the difference of the metal infiltration effect by ALD and CVD. From the comparison of mechanical properties, concentration of the infiltrated metal, and structural changes induced by the infiltrated metal, it has been proven that the metal can effectively infiltrate biomaterials by ALD and the infiltrated metal leads to highly improved mechanical properties accompanied by substantial changes in the protein structures, whereas CVD is less effective.     

Physicochemical properties of dimethylzinc,dimethylcadmium and diethylzinc

Physicochemical properties of dimethylzinc, dimethylcadmium and diethylzinc have been investigated by means of vapor pressure measurement, mass spectroscopy and gas chromatography. The saturated vapor pressure-temperature dependence of these alkyl organometallics was determined to be as follows The temperature ranges for vapor phase decomposition for deposition of each metal were clarified, and vapor-phase species released in the decompositions were investigated. These investigations on the organometallics are to provide basic material data for the establishment of organometallic chemical vapor deposition techniques for Group IIB-VI compounds.     

化学气相淀积法合成氮化铝薄膜及其工艺设计

对ＡｌＢｒ３－ＮＨ３－Ｎ２体系化学气相淀积法合成Ａ１Ｎ膜进行了热力学分析和工艺设计，研究了在不同淀积温度和体系总压时，体系中主要气态物种的平衡分压和Ａ１Ｎ膜的理论淀积速率与源温和载气流量的关系，并与微波等离子体化学气相淀积Ａ１Ｎ膜的实验结果进行了比较。     

Process study of thermal plasma chemical vapor deposition of diamond,part II: Pressure dependence and effect of substrate pretreatment

The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.     

蓝宝石衬底上化学气相沉积法生长石墨烯

化学气相沉积(CVD)法是制备大面积、高质量石墨烯材料的主要方法之一,但存在衬底转移和碳固溶等问题,本文选用蓝宝石衬底弥补了传统CVD法的不足。利用CVD法在蓝宝石衬底上生长石墨烯材料,研究生长温度对石墨烯表面形貌和晶体质量的影响。原子力显微镜(AFM)、光学显微镜(OM)、拉曼光谱和霍尔测试表明,低温生长有利于保持材料表面的平整度,高温生长有利于提高材料的晶体质量。研究氢气和碳源对蓝宝石衬底表面刻蚀作用机理,发现氢气对蓝宝石衬底有刻蚀作用,而单纯的碳源不能对衬底产生刻蚀效果。在1200 ℃下,直径为50 mm的晶圆级衬底上获得平整度和质量相对较好的石墨烯材料,室温下载流子迁移超过1000 cm²·V^-1·s^-1。     

二组元酞菁固相混合法裂解合成直立碳纳米管

通过向两种金属酞菁的混合物添加一定量的硫粉,在800～950 ℃裂解合成了大面积的直立碳纳米管。采用场发射扫描电镜(FE-SEM)、高分辨透射电镜(HRTEM)和拉曼光谱对产物进行了观察和表征,结果显示：所合成的碳纳米管(直径为15～35 nm,长度为200～800 nm)管身平直,具有很好的石墨化程度,且杂质很少。采用两种金属酞菁((M(Ⅱ)Pc, M=Fe, Co))进行混合裂解时,既可以提供碳源,而且可以产生相当均匀的催化剂颗粒,有利直立碳纳米管的沉积。这种将两种酞菁进行固相混合裂解的方法,相当安全高效,有利于大规模生产直立碳纳米管。     

Nano‐structured Hollow Carbon Materials from a Non‐isothermal Chemical Vapor Deposition of Polyphenols

Pyrogallic acid (PG) was used as a modeling carbon source in fabricating nano‐structured hollow carbon materials (HCMs) by a chemical vapor deposition (CVD) method. We found that non‐isothermal deposition can improve the integrity of the obtained HCMs. The different pyrolyzed species from PG under varied temperatures lead to the temperature‐dependent deposition yield, graphitization degree and morphology of the HCMs. HCMs including hollow spheres of varied sizes, cubic boxes with yolk‐shell structure, nanotubes, mesoporous particles and double‐shelled fibers, were prepared by using different templates, demonstrating the universality of this strategy. The carbon source has been extended to other plant polyphenols. The abundant and renewable solid precursors for CVD method endow this strategy excellent operation safety, improved storage and transportation convenience and low cost, and would boost the production of morphology‐ and size‐controlled HCMs and their applications in the fields such as water treatment, electrode materials, adsorbent, drug delivery, and so forth.     

Chemical Infiltration during Atomic Layer Deposition: Metalation of Porphyrins as Model Substrates

New uses for ALD : By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site‐specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A=Ph, p‐HO₃SC₆H₄.

     

Molecular Precursors for the Phase‐Change Material Germanium‐Antimony‐Telluride,Ge2Sb2Te5 (GST)

This review provides an overview of the precursor chemistry that has been developed around the phase‐change material germanium‐antimony‐telluride, Ge₂Sb₂Te₅ (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. In both cases, the success of the layer deposition crucially depends on the proper choice of suitable molecular precursors. Previously reported processes mainly relied on simple alkoxides, alkyls, amides and halides of germanium, antimony, and tellurium. More sophisticated precursor design provided a number of promising new aziridinides and guanidinates.     

碳包覆纳米金属颗粒的合成研究进展

碳包覆纳米金属颗粒是继富勒烯和碳纳米管之后的又一新型纳米碳材料,在许多领域具有广泛应用前景。本文综述了碳包覆纳米金属颗粒的合成方法,包括：电弧放电法、化学气相沉积法、热解法、液相浸渍炭化法和炭凝胶爆炸法等,简述了形成机理,总结了各自的优缺点,并指出将来的发展方向。     

Methane chemical vapor deposition on transition metal/GaAs samples – a possible route to Haeckelite carbon nanotubes?

We present a systematic study of atmospheric chemical vapor deposition growth of carbon nanotubes (CNTs) on patterned, transition metal/GaAs samples employing methane as the carbon feedstock. Controlled CNT growth was found to occur from the exposed metal‐semiconductor interface, rather than from the metal or semiconductor surfaces themselves. A fast sample loading system allowed for a minimization of the exposure to high temperatures, thereby preventing excessive sample damage. The optimum growth temperature for CrNi/GaAs interfaces is 700 °C (at a methane flow rate of 700 sccm). Possible growth scenarios involving the Ni–As–Ga system and its interaction with C is discussed. Raman spectroscopy of the CNTs revealed the presence of pentagon–heptagon defects. Closer analysis of the spectra points towards a mixture of so‐called Haeckelite CNTs. Copyright © 2011 John Wiley & Sons, Ltd.     

Alloys prepared by plasma-enhanced chemical vapor deposition (PECVD)

Three different techniques for the deposition of thin metal alloy films by plasma-enhanced chemical vapor deposition are described. These are the joint vaporization of a mixture of precursors, the use of separate sources connected directly to the reactor, and finally, the use of several reservoirs arranged in series. Various organometallics have been used as precursors to prepare combinations of Fe/Co and Au/Pt/Pd.     

Organometallic chemical vapor deposition using allyl precursors

Homoleptic allyl derivatives of many Main-Group and transition metals, M(C₃H₅)_n, are readily available through one-pot syntheses using metal halides and allyl Grignard reagents or by alkylation of alkali-metal salts. The relatively low molecular weight of a C₃H₅ ligand contributes to high vapor pressures whilst the stability of the allyl radical is predicted to reduce decomposition temperatures. These compounds represent a class of volatile precursors for organometallic chemical vapor deposition (OMCVD) of thin films. Film growth studies using iridium, molybdenum, palladium, platinum, rhodium, selenium, tellurium and tungsten compounds are reviewed and the relationships between pyrolysis pathways and film purity are discussed.     

Synthesis and modification of multi-walled carbon nano-tubes (MWCNTs) for water treatment applications

Synthesis of MWCNTs by chemical vapor deposition (CVD) of acetylene is investigated at different temperatures. Fe-Co/CaCO₃ catalyst/support prepared by wet impregnation method is used. CaCO₃ was found to be a good support as a high selective material for deposition of CNTs with high purity. The effect of temperature on catalyst/support phases and crystal size was identified by using XRD. The crystallite size was decreased with increase temperature. The effect of growing time and temperature on carbon yield was studied and the deposited MWCNTs increased with temperature. The structure and purity of synthesized CNTs at different temperatures was examined by TEM and the effect of temperature on the surface area of the synthesized MWCNTs was investigated, the surface area decreased as the temperature increased. The prepared CNTs were purified using chemical oxidation method and the effect of acid treatment on CNTs surface was examined by TEM and SEM. The function groups produced at CNTs surface were investigated by using FTIR spectroscopy also the effect of CNTs preparation temperature on FTIR spectra was studied. The functionalized CNTs were used for adsorption of some heavy metals and for removal of some organic dyes from water.     

Synthesis and characterisation of zirconium-amido guanidinato complex: a potential precursor for ZrO2 thin films

A new zirconium complex, bis-(ethylmethylamido)-bis-(N,N'-diisopropyl-2-ethylmethylamidoguanidinato)-zirconium(iv) {[(N(i)Pr)(2)C(NEtMe)](2)Zr(NEtMe)(2)}, was synthesised by partial replacement of amide ligands with bidentate guanidinate ligands. The monomeric Zr complex was characterised by (1)H-NMR, (13)C-NMR, EI-MS, elemental analysis, and single crystal X-ray diffraction studies. The thermal properties of the compound was studied by thermogravimetric and differential thermal analysis (TG/DTA). The new Zr compound is thermally stable and can be sublimed quantitatively which renders it promising for thin film growth using vapor deposition techniques like chemical vapor deposition (CVD) and atomic layer deposition (ALD). The use of this complex for CVD of ZrO(2) on Si(100) substrates was attempted in combination with oxygen as the oxidant. Stoichiometric ZrO(2) films with preferred orientation at lower growth temperatures was obtained and the films were almost carbon free. The preliminary electrical characterisation of ZrO(2) films showed encouraging results for possible applications in dielectric oxide structures.     

Synthesis and Temperature-dependent Electrochemical Properties of Boron-doped Diamond Electrodes on Titanium

On the sand-blasting-treated titanium(Ti) substrate, the boron-doped diamond(BDD) electrodes with a wide potential window were prepared by microwave plasma chemical vapor deposition(MPCVD). The electrochemical oxidation ratios of phenol at BDD/Ti electrodes at elevated temperatures(from 20 ℃ to 80 ℃) were examined by the chemical oxygen demand(COD) of phenol electrolyte during electrolysis. The results show that the COD removal was increased at high temperatures and the optimized temperature for enhancing the electrochemical oxidation ratio of phenol is 60 ℃. The mechanism for the temperature-dependent electrochemical oxidation ratios of phenol at the electrodes was investigated. The study would be favorable for further improving the performance of BDD/Ti electrodes, especially working at high temperatures.     

不同金属缓冲层对GaN薄膜的光学及电学性能的影响

本文以金属Ga和NH₃为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。     

Plasma chemical vapor deposition of TiN

Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm² (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.     

Selective Metal‐vapor Deposition on Organic Surfaces

Selective metal‐vapor deposition signifies that metal‐vapor atoms are deposited on a hard organic surface, but not on a soft (low glass transition temperature, low T_g) surface. In this paper, we introduce the origin, extension, and applications of selective metal‐vapor deposition. An amorphous photochromic diarylethene film shows light‐controlled selective metal‐vapor deposition, which is caused by a large T_g change based on photoisomerization, but various organic surfaces, including organic crystal and polymers, can be utilized for achieving selective metal‐vapor deposition. Various applications of selective metal‐vapor deposition, including cathode patterning of organic light‐emitting devices, micro‐thin‐film fuses, multifunctional diffraction gratings, in‐plane electrical bistability for memory devices, and metal‐vapor integration, have been demonstrated.     

Carbon nanotubes for supercapacitors:Consideration of cost and chemical vapor deposition techniques

In this topic,we first discussed the requirement and performance of supercapacitors using carbon nanotubes(CNTs) as the electrode,including specific surface area,purity and cost.Then we reviewed the preparation technique of single walled CNTs(SWNTs) in relatively large scale by chemical vapor deposition method.Its catalysis on the decomposition of methane and other carbon source,the reactor type and the process control strategies were discussed.Special focus was concentrated on how to increase the yield,selectivity,and purity of SWNTs and how to inhibit the formation of impurities,including amorphous carbon,multiwalled CNTs and the carbon encapsulated metal particles,since these impurities seriously influenced the performance of SWNTs in supercapacitors.Wish it be helpful to further decrease its product cost and for the commercial use in supercapacitors.