Mo¨ssbauer studies of thiospinels. III. The system FeCr2S4 -FeIn2S4

Polycrystalline samples of spinel compounds FeCr_2?xIn_xS₄ have been obtained in the range 0 ≦ x ≦ 2. The nonlinear changes of the cell parameters are explained by the nonlinear behavior of the inversion parameter λ according to the ionic distribution Fe²⁺_1?λIn³⁺_λ[Cr³⁺_2?xFe²⁺_λIn³⁺_x?λ]S^2?₄. Room temperature⁵⁷Fe-Mo¨ssbauer spectra exhibit two sets of absorptions for tetrahedrally and octahedrally coordinated Fe, respectively, each consisting of several overlapping doublets of similar isomer shifts but varying quadrupole splittings. The partial intensity of octahedral-site Fe is in agreement with λ. The spectra can be understood by accounting for the influence of variable octahedral-site neighbors on tetrahedral-site iron.     

AgGa(S1-xSex)2固溶体的电子结构和光学性质

采用基于赝势平面波基组的密度泛函理论方法, 对一系列具有黄铜矿结构的AgGa(S_1-xSe_x)₂固溶体的构型、电子结构、线性和二阶非线性光学性质进行了系统研究. 结果表明, 各固溶体具有类似的能带结构, 体系带隙随x值增加而逐渐减小. 当所引入的Hartree-Fock交换项贡献为22.56%时, 对应的杂化PBE泛函得到的带隙值与实验结果相近. 固溶体的各种光学性质, 包括折射率、双折射率、反射率、吸收系数和二阶倍频系数等均随着组成的改变呈现出有规律的变化趋势, 变化范围介于AgGaS₂和AgGaSe₂二者之间. 因此, 利用固溶体光学性质的变化规律, 可从中寻找出具有特定光学性能的晶体材料.     

Raman scattering in mixed defect chalcopyrite crystals

We have investigated with Raman spectroscopy pseudoternary Zn_xCd_1?xGa₂S₄ and CdGa₂(S_xSe_1?x)₄ phases over the whole composition range. In Zn_xCd_1?xCd_1?xGa₂S₄ a smooth variation of the spectra and a generalized one-mode behaviour has been observed, except for the lowest frequency modes. In CdGa₂(S_xSe_1?x)₄ the anion substitution has a larger influence on the spectra. Peculiar two-mode behaviour is displayed by the strong A-symmetry breathing modes.     

A Novel in Situ Oxidization-Sulfidation Growth Route via self-Purification Process to β-In2S3 Dendrites

A novel in situ oxidization-sulfidation growth route via a self-purification process has been developed to synthesize β-In₂S₃ dendrites. To our best knowledge, this is the first example to prepare dendrites of III-VI compounds, which are expected to show particular physical properties. The X-ray analysis (EDXA), X-ray photoelectron spectra (XPS), Raman spectrum and optical properties of β-In₂S₃ dendrites have also been investigated. It is found that the product is pure In₂S₃ and shows the strong quantum confinement of the excitonic transition expected for the In₂S₃ dendrites.     

Mössbauer spectra,magnetic and electrical behavior of Ba1+xFe2S4 phases

The Mössbauer spectra, and magnetic and electrical properties of Ba_1+xFe₂S₄ infinitely adaptive phases with 0.074 ≤ x ≤ 0.142 and of BaFe₂S₄ were studied. The properties are highly anisotropic because of the presence in the structure of one-dimensional infinite chains of edge sharing FeS₄ tetrahedra. BaFe₂S₄ is a semiconductor, E_g = 0.66 eV; magnetic susceptibility can be fit by a one-dimensional Heisenberg model with spin $\text{5}\text{2}$ and $\text{J}\text{k}\text{= ?30°}\text{K}$. The Ba_1+xFe₂S₄ phases have Curie-Weiss behavior with an effective moment of about 2 B.M. The moment increases with x. These phases are metallic. The Mössbauer isomer shift varies linearly with valence, increasing with increasing x. The single quadrupole split absorption line characteristic of these compounds disappears at about 270°K and a complex spectrum consisting of overlapping hyperfine patterns appears at lower temperatures. Magnetic short-range ordering is responsible for this behavior although the susceptibility in this temperature range does not reflect this effect.     

Bi3In4S10 and Bi14.7In11.3S38: Two new bismuth sulfides with interesting Bi-Bi bonding

Two new ternary bismuth chalcogenides, Bi₃In₄S₁₀ and Bi_14.7In_11.3S₃₈, were synthesized from the reactions of binary sulfides via a two-step flux technique. Single-crystal X-ray diffraction analyses indicate that Bi₃In₄S₁₀ crystallizes in the non-centrosymmetric space group Pm and Bi_14.7In_11.3S₃₈ crystallizes in the centrosymmetric space group P2₁/m. Both compounds adopt three-dimensional frameworks. A distinct structural feature in the two structures is the presence of chains of Bi atoms with alternating short Bi-Bi bonds of around 3.1 Å and longer distances of around 4.6 Å. The optical band gaps of 1.42(2) eV for Bi₃In₄S₁₀ and 1.45(2) eV for Bi_14.7In_11.3S₃₈ were deduced from the diffuse reflectance spectra.     

Structure and magnetic properties of sulfides of the type CdRE2S4 and Mg(GdxYb1−x)2S4

CdRE₂S₄ (RE = Gd, Tb, Dy, Ho, Er, Tm, and Yb) and Mg(Gd_xYb_1?x)₂S₄ were prepared by solid-state reactions. All the cadmium-containing compounds are cubic, i.e., the Th₃P₄ structure for Gd, Tb, and Dy and the spinel type for all the others. The first three compounds were deficient in CdS. In the case of the Mg system, for x = 1 the system is cubic Th₃P₄, for x = 0 cubic spinel, and for 0 < x < 1 orthorhombic MnY₂S₄ (Cmc2₁). All the materials studied are paramagnetic above 77 K. Below 77 K in the magnesium family both cubic materials are paramagnetic down to 4.2 K and the orthorhombic materials show magnetic ordering. In the cadmium family all but CdTm₂S₄ show exchange coupling.     

Phase relationships in the systems MSCr2S3In2S3 (M = Co,Cd, Hg)

The phase diagrams of the quaternary systems MSCr₂S₃In₂S₃, with M = Co, Cd, and Hg, were studied with the help of X-ray powder photographs of quenched samples, high-temperature X-ray diffraction patterns, DTA and TG measurements, and far-infrared spectra. Because indium sulfides do react with silica tubes, alumina crucibles must be used for annealing the samples. Complete series of mixed crystals are formed among the spinel-type compounds MCr₂S₄, MIn₂S₄ (M = Cd, Hg), and In₂S₃. HgIn₂S₄ is decomposed at temperatures above 300°C. In the sections CoCr₂S₄CoIn₂S₄ and CoCr₂S₄In₂S₃ relatively large miscibility gaps exist due to the change from normal to inverse spinel structure. But the interchangeability of both systems increases with increasing temperature, and at temperatures above 1000°C, complete series of solid solutions are formed, which can be quenched to ambient temperature. Superstructure ordering like that of ordered α-In₂S₃ has been found in the In-rich region of the MIn₂S₄In₂S₃ solid solutions. The unit cell dimensions of all stoichiometric and phase boundary compounds, e.g., Cd_1.15In_1.9S₄, including the chromium spinels MCr₂S₄ (M = Mn, Zn) and ZnCr₂Se₄, are given and discussed in terms of possible deviations from stoichiometry.     

Direct synthesis of dimethyl carbonate ?from CH3OH AND CO2 by H3PW12O40/CexTi1-xO2 catalyst

Summary Ce_xTi_1-xO₂ and H₃PW₁₂O₄₀/Ce_xTi_1-xO₂ catalysts were prepared using a sol-gel method, and applied to the direct synthesis of dimethyl carbonate from methanol and carbon dioxide. H₃PW₁₂O₄₀/Ce_xTi_1-xO₂ showed a better catalytic performance than the corresponding Ce_xTi_1-xO₂, due to the bifunctional catalysis of Br?nsted acid sites (provided by H₃PW₁₂O₄₀) and base sites (provided by Ce_xTi_1-xO₂). H₃PW₁₂O₄₀/Ce_0.1Ti_0.9O₂ showed the highest catalytic performance among the H₃PW₁₂O₄₀/Ce_xTi_1-xO₂ catalysts.     

Phase transitions in A-site substituted perovskite compounds: The (Ca1-2xNaxLax)TiO3 (0?x?0.5) solid solution

The (Ca_1-2xNa_xLa_x)TiO₃ (0?x?0.5) A-site substituted perovskite compounds have been synthesized and characterized by XRD and Raman spectroscopy at room temperature. The XRD powder diffraction study suggests that the end-member Na_1/2La_1/2TiO₃ crystallizes in the tetragonal space group I4/mcm. The phase transition from Pbnm to I4/mcm is located between x=0.34 and 0.39 and is driven by the variation of ionic radii at the A-site. The observed Raman modes are in agreement with group theory analysis, and the relationships between the behavior of structural parameters (e.g. Ti-O-Ti bond angle), indicated by long-range order, and the corresponding Raman frequency shifts and intensity evolution, indicated by short-range order, are established and discussed in terms of the radius effect and the mass effect.     

New transparent conductors with the M7O12 ordered oxygen-deficient fluorite structure: from In4Sn3O12 to In5.5Sb1.5O12

A new transparent conductor, containing pentavalent antimony, In_4+xSn_3−2xSb_xO₁₂, has been synthesized for 0?x?1.5. The latter exhibits an ordered oxygen-deficient fluorite structure with an ordered distribution of Sb⁵⁺ and In³⁺/Sn⁴⁺ species in the octahedral and seven-fold coordinated sites, respectively. More importantly, it is shown that the electronic conductivity of this transparent conducting oxide (TCO) at room temperature, is one order of magnitude larger for x=1 (In₅SnSbO₁₂) than for x=0 (In₄Sn₃O₁₂) and it turns to a semi-metallic behavior in contrast to In₄Sn₃O₁₂ which is a semi-conductor. The potential of this new material, as TCO, is also shown by its reflectance spectra, similar to In₄Sn₃O₁₂, involving only a small increase of the optical bandgap, by 0.15 eV.     

Synthesis and structural characterization of A3In2Ge4 and A5In3Ge6 (A=Ca, Sr, Eu, Yb)—New intermetallic compounds with complex structures, exhibiting Ge-Ge and In-In bonding

Reported are the synthesis and the structural characterization of four new polar intermetallic phases, which exist only with mixed alkaline-earth and rare-earth metal cations in narrow homogeneity ranges. (Sr_1-xCa_x)₅In₃Ge₆ and (Eu_1-xYb_x)₅In₃Ge₆ (x≈0.7) crystallize in the orthorhombic space group Pnma with two formula units per unit cell (own structure type, Pearson symbol oP56). The lattice parameters are as follows: a=13.109(3)-13.266(3) Å, b=4.4089(9)-4.4703(12) Å, and c=23.316(5)-23.557(6) Å. (Sr_1-xCa_x)₃In₂Ge₄ and (Sr_1-xYb_x)₃In₂Ge₄ (x≈0.4-0.5) adopt another novel monoclinic structure-type (space group C2/m, Z=4, Pearson symbol mS36) with lattice parameters in the range a=19.978(2)-20.202(2) Å, b=4.5287(5)-4.5664(5) Å, c=10.3295(12)-10.3447(10) Å, and β=98.214(2)-98.470(2)°, depending on the metal cations and their ratio. The polyanionic sub-structures in both cases are based on chains of InGe₄ corner-shared tetrahedra. The A₅In₃Ge₆ structure (A=Sr/Ca or Sr/Yb) also features Ge₄ tetramers, and isolated In atoms in nearly square-planar environment, while the A₃In₂Ge₄ structure (A=Sr/Ca or Eu/Yb) contains zig-zag chains of In and Ge strings with intricate topology of cis- and trans-bonds. The experimental results have been complemented by tight-binding linear muffin-tin orbital (LMTO) band structure calculations.     

Theoretical Design of an MoxW1-xS2/Graphene (x=0.25/0.75) Heterojunction with Adjustable Band Gap: Potential Candidate Materials for the Next Generation of Optoelectronic Devices

Multicomponent two-dimensional (2D) transition metal dichalcogenides (TMDCs) semiconductors based on adjustable band gap are increasingly used to design optoelectronic devices with specific spectral response. Here, we have designed the Mo_xW_1-xS₂/graphene heterostructure with adjustable band gap by adopting the combination idea of alloying and multiple heterogeneous recombination. The contact type, stability and photoelectric properties of Mo_xW_1-xS₂/graphene heterojunction were investigated theoretically. At the same time, by applying external vertical electric field to Mo_xW_1-xS₂/graphene, the regulate of heterojunction Schottky contact type was realized. The results show that Mo_xW_1-xS₂/graphene heterojunction has broad application prospects in the field of photocatalysis and Schottky devices, and is suitable for being a potential candidate material for next generation of optoelectronic devices. The design of Mo_xW_1-xS₂/graphene heterostructure enables it to obtain the advanced characteristics that are lacking in the one-component intrinsic 2D TMDCs semiconductors or graphene materials, and provides a theoretical basis for the experimental preparation of such heterojunctions.     

Structural and vibrational studies of Li[Kx(NH4)1−x]SO4 and Li2KNH4(SO4)2 mixed crystals

Mixed crystals of Li[K_x(NH₄)_1−x]SO₄ have been obtained by evaporation from aqueous solution at 313 K using different molar ratios of mixtures of LiKSO₄ and LiNH₄SO₄. The crystals were characterized by Raman scattering and single-crystal and powder X-ray diffraction. Two types of compound were obtained: Li[K_x(NH₄)_1−x]SO₄ with x?0.94 and Li₂KNH₄(SO₄)₂. Different phases of Li[K_x(NH₄)_1−x]SO₄ were yielded according to the molar ratio used in the preparation. The first phase is isostructural to the room-temperature phase of LiKSO₄. The second phase is the enantiomorph of the first, which is not observed in pure LiKSO₄, and the last is a disordered phase, which was also observed in LiKSO₄, and can be assumed as a mixture of domains of two preceding phases. In the second type of compound with formula Li₂KNH₄(SO₄)₂, the room-temperature phase is hexagonal, symmetry space group P6₃ with cell-volume nine times that of LiKSO₄. In this phase, some cavities are occupied by K⁺ ions only, and others are occupied by either K⁺ or NH₄⁺ at random. Thermal analyses of both types of compounds were performed by DSC, ATD, TG and powder X-ray diffraction. The phase transition temperatures for Li[K_x(NH₄)_1−x]SO₄x?0.94 were affected by the random presence of the ammonium ion in this disordered system. The high-temperature phase of Li₂KNH₄(SO₄)₂ is also hexagonal, space group P6₃/mmc with the cell a-parameter double that of LiKSO₄. The phase transition is at 471.9 K.     

The phase study of the TlVS system and the properties of TlV6S8 and TlV5S8 phases

The ternary phase diagram of the TlVS system was investigated using samples quenched from 400°C, especially in the neighborhood of TlV₆S₈ and TlV₅S₈ phases. The TlV₆S₈ phase (Tl_xV₆S_y) exists between 0.75 < x < 1.00 and 7.55 < y < 7.90, and the TlV₅S₈ phase (Tl_x′V₅S_y′) between 0.70 < x′ < 1.00 and 7.54 < y′ < 7.98. A new ternary phase with the nominal composition of TlV₂S₄ was found in addition to the three known ternary phases. The entirely deintercalated V₆S_7.8 with the framework structure was obtained by using 1 N AlCl₃ + 0.01 N FeCl₃ aqueous solution, while the lower phase limit of the TlV₅S₈ phase was Tl_0.33V₅S₈ consistent with the earlier work. The electrical resistivity and the magnetic susceptibility measurements show that these compounds are expected to be weakly magnetic itinerant-electron systems.     

Verbindungen mit Schichtstrukturen in den Systemen CuGa5S8/CuIn5S8 und AgGa5S8/AgIn5S8

Compounds with Layered Structures in the Systems CuGa₅S₈/CuIn₅S₈ and AgGa₅S₈/AgIn₅S₈ The title systems have been investigated by single crystal and powder X‐ray diffraction methods on quenched samples. In the system AgGa_xIn_5–xS₈ spinel type phases are formed up to x < 2. A compound crystallising with a hexagonal layered structure is obtained for 2 < x ≤ 3. The crystal structure of this layered phase has been solved on a single crystal of composition AgGa₃In₂S₈: space group P6₃mc, Z = 2, a = 380.80 and c = 3076.4 pm. The structure is isotypic to the Zn₂In₂S₅ (II a) type. The sample AgGa₄InS₈ crystallises in a Wurtzite like structure with a = 377.25 and c = 616.1 pm. In the system CuGa_xIn_5–xS₈ a new compound with layered structure has been detected for 1 ≤ x ≤ 2 which crystallises hexagonally with a = 380.28 and c = 3073.4 pm (x = 2). For the spinel CuIn₅S₈ an exchange of In by Ga is not detected.     

Thermoanalytical characterization of vanadium-chromium oxide compounds prepared by 'soft chemistry' method

Summary Hydrated microcrystalline compound, V_1-xCr_xO_y·nH₂O, where x<0.063 and 4.4<n<8 and hydrated amorphous phases, CrVO₄·H₂O and Cr₂V₄O₁₃·4H₂O have been prepared using peroxo-polyacids of vanadium and chromium. The transformations of these hydrated phases upon heating were studied by TG-DTA and XRD techniques and led to three crystalline anhydrous compounds: (i) phase V_1-xCr_xO_y, which is closely related to the orthorhombic V₂O₅, (ii) Cr₂V₄O₁₃ and (iii) monoclinic CrVO₄-M. The ranges of coexistence of phases in equilibrium were also determined.     

The Crystal Structures, Microstructure and Ionic Conductivity of Ba2In2O5 and Ba(InxZr1−x)O3−x/2

This paper describes the results of electron microscopy, high-temperature powder neutron diffraction, and impedance spectroscopy studies of brownmillerite-structured Ba₂In₂O₅ and perovskite structured Ba(In_xZr_1−x)O_3−x/2. The ambient temperature structure of Ba₂In₂O₅ is found to adopt Icmm symmetry, with disorder of the tetrahedrally coordinated (In³⁺) ions of the type observed previously in Sr₂Fe₂O₅. Ba₂In₂O₅ undergoes a ∼6-fold increase in its ionic conductivity over the narrow temperature range from ∼1140 K to ∼1230 K, in broad agreement with previous studies. This transition corresponds to a change from the brownmillerite structure to a cubic perovskite arrangement with disordered anions. Electron microscopy investigations showed the presence of extended defects in all the crystals analyzed. Ba(In_xZr_1−x)O_3−x/2 samples with x=0.1 to 0.9 adopt the cubic perovskite structure, with the lattice parameter increasing with x.     

Structural investigation of the Cu2Se-In2Se3-Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Structures of compounds in the Cu₂Se-In₂Se₃-Ga₂Se₃ system have been investigated through X-ray diffraction. Single crystal structure studies for the so-called stoichiometric compounds Cu(In,Ga)Se₂ (CIGSe) confirm that the chalcopyrite structure (space group I4¯2d) is very flexible and can adapt itself to the substitution of Ga for In. On the other hand a structure modification is evidenced in the Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ series when the copper vacancy ratio (z) increases; the chalcopyrite structure turns to a modified-stannite structure (I4¯2m) when z≥0.26. There is a continuous evolution of the structure from Cu_0.74(In_0.5Ga_0.5)_1.09Se₂ to Cu_0.25(In_0.5Ga_0.5)_1.25Se₂ ((i.e. Cu(In_0.5Ga_0.5)₅Se₈), including Cu_0.4(In_0.5Ga_0.5)_1.2Se₂ (i.e. Cu(In_0.5Ga_0.5)₃Se₅). From this single crystal structural investigation, it is definitively clear that no ordered vacancy compound exists in that series. X-ray photoemission spectroscopy study shows for the first time that the surface of powdered Cu_1−z(In_0.5Ga_0.5)_1+z/3Se₂ compounds (z≠0) is more copper-poor than the bulk. The same result has often been observed on CIGSe thin films material for photovoltaic applications. In addition, optical band gaps of these non-stoichiometric compounds increase from 1.2 to 1.4 eV when z varies from 0 to 0.75.     

Na1－xZr2－xNbxP3O12系列化合物的水热晶化研究

采用水热晶化反应，制备出传统需要高大相反合成的掺杂，ＮＡＳＩＣＯＮ化合物Ｎａ１－ｘＺｒ２－ｘＮｂｘＰ３Ｏ１２（０＜Ｘ＜１），并应用ＸＲＤ，ＩＲ方法对产物的晶体结构进行了研究。表明水热晶化产物是纯的物相并具有与ＮａＺｒ２Ｐ３Ｏ１２相同的结构，固体＾３１ＰＮＭＲ研究证实Ｎｂ＾５＋部分取代了Ｚｒ＾４＋所在位置，参与骨架的组成，并统计分布于结构中，水热晶化产物与固相反应产物具有相同的离子电导性能。