多元杂环萘二酰亚胺衍生物的合成及其场效应性能研究

杂环修饰的萘二酰亚胺(NDI)类化合物由于其独特的光电性能被研究人员广泛关注,并应用于有机场效应晶体管(OFETs)、有机太阳能电池中(OSCs)、传感器等领域。但是含有给受体单元的多元杂环萘二酰亚胺衍生物的合成并不容易,本文通过简单高效的方法设计合成了含有氮、硫原子的11个杂环类萘二酰亚胺衍生物,并通过紫外可见吸收光谱、循环伏安曲线和X射线衍射对其进行了物性研究。通过溶液旋涂法,制备了该材料的底栅底接触场效应晶体管器件,在空气中表现出p型半导体性能,当退火温度为140 ℃时性能达到最优,其空穴迁移率为0.2 cm_²?V_^-1?s_^-1。     

高结晶度方酸菁染料全溶液制备平面异质结有机太阳能电池

高结晶度有机半导体材料由于分子紧密堆叠,电荷迁移率高,但其在普通有机溶剂中溶解度低,溶液可加工性较差,限制了其在有机光电产品中的应用。本文设计合成了一种甲基修饰的高结晶度方酸菁类染料(DM-SQ),利用三氟乙酸溶剂溶液涂布制备DM-SQ薄膜。研究发现溶液制备的DM-SQ薄膜结晶度高,与真空沉积的DM-SQ薄膜比较,空穴迁移率更高(5.28×10_^-4 vs. 7.53×10_^-5 cm_² v_^-1 s_^-1)。以DM-SQ作为给体,PC₆₁BM作为受体,制备了平面异质结太阳能电池。溶液法制备的器件平均能量转换效率明显高于真空沉积器件(6.08±0.19％和3.56±0.22％)。     

溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件

采用旋涂法用浓度分别为0.05,0.10和0.25 mol·L^-1的氧化锌前躯体溶液制备了氧化锌薄膜,并且制备了基于氧化锌多层膜的顶栅极晶体管器件,其中以利用光刻工艺刻蚀的氧化铟锡为源漏电极。通过原子力显微镜(AFM)和X-射线衍射(XRD)分别表征了薄膜的形貌以及结晶情况,并且讨论了前躯体的浓度顺序对氧化锌多层膜的影响。按照浓度从大到小的顺序依次旋涂前躯体溶液制备的氧化锌薄膜表现出了较高的载流子迁移率(7.1×10^-3 cm²·V^-1·s^-1),而按照浓度从小到大的顺序依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率为5.2×10^-3 cm²·V^-1·s^-1。文中通过对两种多层薄膜的形貌和结晶性能的分析表明影响顶栅极薄膜晶体管性能的主要因素是薄膜的粗糙度。平整的薄膜有利于形成较好的半导体层/绝缘层接触界面,从而有利于提高器件的载流子迁移率。     

尖晶石Li4Ti5O12中锂离子的化学扩散系数的研究

A relatively simple galvanostatic method was used for the evaluation on the average chemical diffusion coefficient of lithium-ion in spinel Li₄Ti₅O₁₂ prepared by solid-state reaction technique. The diffusion coefficient of lithium-ion was estimated to be 2.8×10^-13 cm²·s^-1 and 1.3×10^-13 cm²·s^-1 for charge and discharge， respectively.     

阴离子为羧酸根和芳环共轭的离子液体在染料敏化太阳能电池中的应用

提出了利用p-π共轭效应设计离子液体的方法, p-π共轭效应可以有效分散阴离子的负电荷, 降低离子液体中阴阳离子之间的库仑引力, 以得到低粘度的离子液体. 所设计的离子液体为1-乙基-3-甲基咪唑苯甲酸(EMIB)和1-乙基-3-甲基咪唑异烟酸(EMIIN) (它们的阴离子中羧酸根和芳环为p-π共轭结构), 这两种离子液体都达到了较低的粘度(EMIB为42 mPa·s, EMIIN为27 mPa·s). 进一步将这两种离子液体做成电解质, 应用在染料敏化太阳能电池中, 通过优化电解质的组成, EMIB基电解质达到了1.43 mS·cm^-1的电导率和1.45×10^-7cm²·s^-1的I₃^?的扩散系数, 而EMIIN基电解质的电导率和I₃^?扩散系数分别为1.63 mS·cm^-1和2.01×10^-7 cm²·s^-1,后者电导性能的提高主要和EMIIN粘度较低有关系. 进一步将这两种电解质组装成电池, 在300 W·m^-2的光强下测得EMIB基电池和EMIIN基电池的效率分别为2.85%和4.30%.     

磁控溅射中靶-基底距离与Si共掺对ZnO:Al薄膜性质的影响

使用射频磁控溅射, 在正方形石英衬底上沉积透明导电掺Al的ZnO(AZO)和Si共掺AZO(AZO:Si)薄膜. 系统研究了靶-基底距离(D_st)和Si共掺对AZO薄膜电学、光学性质的影响. 电阻率、载流子浓度和迁移率都强烈地依赖于靶-基底距离, 随着靶-基底距离的减少, 载流子浓度和迁移率都有显著的增加, 电导率也随之提高. 在靶-基底距离为4.5 cm处, 得到最低电阻率4.94×10^-4 Ω·cm, 此时的载流子浓度和迁移率分别是3.75×10²⁰ cm^-3和33.7 cm²·V^-1·s^-1. X射线光电子能谱(XPS)、X射线衍射(XRD)和边界散射模型被用于分析载流子浓度、迁移率和靶-基底距离的关系. 透射谱显示, 在可见-近红外范围内所有样品均有大于93%的平均透射率, 同时随着靶基距离的减少, 吸收边蓝移. AZO:Si表现出可与AZO相比拟的高电导和高透射光学特性, 但在热湿环境中却有着更好的电阻稳定性, 这在实际使用中很有意义.     

光电功能有机晶体研究进展

近几年光电功能有机单晶的研究取得一些重要进展, 是有机光电材料研究领域新的热点. 与无定形材料相比, 有机单晶具有高的稳定性、结构上的有序性、高的载流子迁移率等特性, 在光电器件应用方面具有诸多优势. 单晶具有明确的结构, 为研究有机分子间的基本作用力(超分子作用)、分子的堆积模式等对光电性能(发光、载流子迁移等)的影响提供了一个极好的载体. 通过调控有机晶体中的分子排列, 有机晶体的发光效率已超过80%, 载流子迁移率达10 cm²·V^&;#8722;1·s^&;#8722;1水平, 并在多种晶体中观测到放大受激发射现象. 本文着重介绍光电功能有机单晶的研究进展, 其中涉及一些相关的基本原理介绍.     

Diffusion of Noble Metals,Zn and Ge in GaSb Single Crystals

Diffusion of Cu, Ag, Au, Ge and Zn in single crystal gallium antimonide has been carried out by measuring Hall effect according to van der Pauw, conductivity, energy dispersive X-ray (EDX) and surface electron microscopy. The best results have been obtained in excess of antimony. The resulting diffusion data in GaSb are diffusivity D_o, activation enthalpy Q, carrier density p and mobility μ at 300 K: Ag: D_o=1.8·10⁻⁴ cm² s⁻¹, Q=1.2 eV, p=6·10¹⁸ cm⁻³, μ=550 cm² (Vs)⁻¹ Au: D_o=6.6·10⁺³ cm² s⁻¹, Q=2.7 eV, p=5·10¹⁸ cm⁻³, μ=500 cm² (Vs)⁻¹ Cu: D_o=3.2·10⁺⁸ cm² s⁻¹, Q=2.7 eV, p=2·10¹⁸ cm⁻³, μ=150 cm² (Vs)⁻¹ Zn: D_o=9.2·10⁻² cm² s⁻¹, Q=1.8 eV, p=2·10²⁰ cm⁻³, μ=80 cm² (Vs)⁻¹ Ge: D_o=1.0·10⁻¹ cm² s⁻¹, Q=1.7 eV, p=1·10¹⁹ cm⁻³, μ=320 cm² (Vs)⁻¹. This revised version was published online in August 2006 with corrections to the Cover Date.     

Li3V2(PO4)3电极过程及其锂离子脱嵌动力学研究(I)

采用溶胶凝胶法合成了Nasicon化合物Li₃V₂(PO₄)₃, 采用X射线衍射(XRD)对产品进行了物相分析. 采用充放电测试, 循环伏安(CV)研究了化合物的电化学性能和锂离子的脱嵌过程, 计算出Li^＋在固相中的扩散系数(10^－8 cm²•s^－1); 采用交流阻抗测试(EIS)研究了Li₃V₂(PO₄)₃的电极过程; 对两种类型的阻抗图谱提出不同等效电路模型并对结果进行了拟合; 研究了Li₃V₂(PO₄)₃电极过程动力学以及新鲜电极界面在充放电过程中的变化特性.     

Li3V2(PO4)3电极过程及其锂离子脱嵌动力学研究(I)

采用溶胶凝胶法合成了Nasicon化合物Li₃V₂(PO₄)₃, 采用X射线衍射(XRD)对产品进行了物相分析. 采用充放电测试, 循环伏安(CV)研究了化合物的电化学性能和锂离子的脱嵌过程, 计算出Li^＋在固相中的扩散系数(10^－8 cm²•s^－1); 采用交流阻抗测试(EIS)研究了Li₃V₂(PO₄)₃的电极过程; 对两种类型的阻抗图谱提出不同等效电路模型并对结果进行了拟合; 研究了Li₃V₂(PO₄)₃电极过程动力学以及新鲜电极界面在充放电过程中的变化特性.     

Polymer electrolyte gate dielectric reveals finite windows of high conductivity in organic thin film transistors at high charge carrier densities

Finite regions of high conductivity were observed in both n- and p-channel organic thin film transistors based on polycrystalline organic semiconductor films and a solution-processed, solid polymer electrolyte gate dielectric. The transition from a highly conductive state to a more insulating state with increasing gate bias may be attributed to the realization of carrier densities greater than 1014 charges/cm2 in the semiconductor film.     

Dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT): synthesis, characterization, and FET characteristics of new π-extended heteroarene with eight fused aromatic rings

A novel highly π-extended heteroarene with eight fused aromatic rings, dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT), was selectively synthesized via a newly developed synthetic strategy, fully characterized by means of single crystal X-ray structural analysis, and examined as an organic semiconductor in thin film transistors. Even with its highly extended acene-like π-system, DATT is a fairly air-stable compound with IP of 5.1 eV. Single crystal X-ray structural analysis revealed its planar molecular structure and the lamella-like layered structure with typical herringbone packing. Theoretical calculations of the solid state electronic structure based on the bulk single crystal structure suggest that DATT affords almost comparable intermolecular orbital couplings between HOMOs (t(HOMO)) with those of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), implying its good potential as an organic semiconductor for organic field-effect transistors. In fact, field-effect mobilities as high as 3.0 cm(2) V(-1) s(-1) were achieved with vapor-processed DATT-based devices, which is comparable with that of DNTT-based devices. The molecular ordering of DATT in the thin film state, however, turned out to be not completely uniform; as elucidated by in-plane and out-of-plane XRD measurements, the face-on molecular orientation was contaminated in the edge-on orientation, the former of which is not optimal for efficient carrier transport and thus could limit the mobility.     

Control of polymorphism in solution-processed organic thin film transistors by self-assembled monolayers

Polymorphism of organic semiconductor films is of key importance for the performance of organic thin film transistors(OTFTs).Herein, we demonstrate that the polymorphism of solution-processed organic semiconductors in thin film transistors can be controlled by finely tuning the surface nanostructures of substrates with self-assembled monolayers(SAMs). It is found that the SAMs of 12-cyclohexyldodecylphosphonic acid(CDPA) and 12-phenyldodecylphosphonic acid(Ph DPA) induce different polymorphs in the dip-coated films of 2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene(BTBT-C12). The film of BTBT-C12 on CDPA exhibits field effect mobility as high as 28.1 cm~2 V~(-1) s~(-1) for holes, which is higher than that of BTBT-C12 on Ph DPA by three times. The high mobility of BTBT-C12 on CDPA is attributable to the highly oriented films of BTBT-C12 with a reduced in-plane lattice and high molecular alignment.     

Effect of morphology on organic thin film transistor sensors

This review provides a general introduction to organic field-effect transistors and their application as chemical sensors. Thin film transistor device performance is greatly affected by the molecular structure and morphology of the organic semiconductor layer. Various methods for organic semiconductor deposition are surveyed. Recent progress in the fabrication of organic thin film transistor sensors as well as the correlation between morphology and analyte response is discussed.     

A conjugated polyazine containing diketopyrrolopyrrole for ambipolar organic thin film transistors

A π-conjugated polyazine containing diketopyrrolopyrrole (DPP) moiety, PDBTAZ, is synthesized through a simple condensation polymerization. PDBTAZ is found to be a high-performance ambipolar semiconductor in organic thin film transistors (OTFTs), showing an electron mobility of up to 0.41 cm(2) V(-1) s(-1) and a hole mobility of up to 0.36 cm(2) V(-1) s(-1).     

Solution‐Processable Balanced Ambipolar Field‐Effect Transistors Based on Carbonyl‐Regulated Copolymers

It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole‐ and electron‐transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron‐withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm² V^?1 s^?1, which suggested that these copolymers are promising ambipolar semiconductor materials.     

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO2 nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

We demonstrate the effect of engineered interfaces by introducing different classes of polymeric buffer layers onto a titanium oxide (TiO₂) nanocomposite film on the density of interfacial trap sites and corresponding mobility in low‐voltage‐operated organic field‐effect transistors. The organic field‐effect transistors were fabricated using pentacene as an organic semiconductor layer and a high dielectric TiO₂ nanocomposite film for low‐voltage operation stacked with two different kinds of thin polymers, one of which is hydroxyl group‐existing polyvinyl phenol and the other is hydroxyl group‐free polyvinyl cinnamate. By using the hydroxyl group‐free buffer layer, the interfacial trap density is found to be much decreased than that for the hydroxyl group‐existing buffer layer. In addition, the mobility for the polyvinyl cinnamate used case, shows significantly increased value by at least one of magnitude compared to the case of no buffer layer. It is found that a hydroxyl group‐free polymeric layer produces a more effective surface, which leads to high electrical properties and less electrochemical traps at the interface in the organic devices. Copyright © 2011 John Wiley & Sons, Ltd.     

Improving the Performance of TIPS-pentacene Thin FilmTransistors via Interface Modification

Understanding the structure-performance relationship is crucial for optimizing the performance of organic thin film transistors. Here, two interface modification methods were applied to modulate the thin film morphology of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene). The resulting different film morphologies and packing structures led to distinct charge transport abilities. A substantial 40-fold increase in charge carrier mobility was observed on the octadecyltrichlorosilane(OTS)-modified sample compared to that of the transistor on the bare substrate. A better charge mobility greater than 1 cm²·V^-1·s^-1 is realized on the p-sexiphenyl(p-6P)- modified transistors due to the large grain size, good continuity and, importantly, the intimate π-π packing in each domain.     

High-performance,solution-processed organic thin film transistors from a novel pentacene precursor

The Lewis acid-catalyzed Diels-Alder reaction of the organic semiconductor pentacene with N-sulfinylacetamide yields a soluble adduct. Spin-coated thin films of this adduct undergo solid-phase conversion to form thin films of pentacene at moderate temperatures. Organic thin film transistors fabricated by spin-coating this adduct, followed by thermal conversion to pentacene, exhibit the highest mobility reported to date for a solution-processed organic semiconductor.     

High electron mobility in ladder polymer field-effect transistors

Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.