| 磁控溅射中靶-基底距离与Si共掺对ZnO:Al薄膜性质的影响 |
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| 引用本文： | 徐浩,陆昉,傅正文.磁控溅射中靶-基底距离与Si共掺对ZnO:Al薄膜性质的影响[J].物理化学学报,2011,27(5):1232-1238. |
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| 作者姓名： | 徐浩 陆昉 傅正文 |
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| 作者单位： | 1. Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Surface Physics Laboratory & Department of Physics, Fudan University, Shanghai 200433, P. R. China;
2. Department of Chemistry & Laser Chemistry Institute, Fudan University, Shanghai 200433, P. R. China |
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| 基金项目： | The project was supported by the Science & Technology Commission of Shanghai Municipality，National Natural Science Foundation of China，National Key Basic Research Program of China(973)，National High-Tech Research and Development Program of China(863)(2007AA032322).上海科学技术委员会，国家自然科学基金，国家重点基础研究发展规划(973)，国家高技术研究发展计划(863) |
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| 摘 要： | 使用射频磁控溅射, 在正方形石英衬底上沉积透明导电掺Al的ZnO(AZO)和Si共掺AZO(AZO:Si)薄膜. 系统研究了靶-基底距离(Dst)和Si共掺对AZO薄膜电学、光学性质的影响. 电阻率、载流子浓度和迁移率都强烈地依赖于靶-基底距离, 随着靶-基底距离的减少, 载流子浓度和迁移率都有显著的增加, 电导率也随之提高. 在靶-基底距离为4.5 cm处, 得到最低电阻率4.94×10-4 Ω·cm, 此时的载流子浓度和迁移率分别是3.75×1020 cm-3和33.7 cm2·V-1·s-1. X射线光电子能谱(XPS)、X射线衍射(XRD)和边界散射模型被用于分析载流子浓度、迁移率和靶-基底距离的关系. 透射谱显示, 在可见-近红外范围内所有样品均有大于93%的平均透射率, 同时随着靶基距离的减少, 吸收边蓝移. AZO:Si表现出可与AZO相比拟的高电导和高透射光学特性, 但在热湿环境中却有着更好的电阻稳定性, 这在实际使用中很有意义.
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| 关 键 词： | AZO AZO:Si 靶-基底距离 射频磁控溅射 |
| 收稿时间： | 2010-12-20 |
| 修稿时间： | 2011-03-10 |
Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering |
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| XU Hao,LU Fang,FU Zheng-Wen.Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering[J].Acta Physico-Chimica Sinica,2011,27(5):1232-1238. |
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| Authors: | XU Hao LU Fang FU Zheng-Wen |
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| Institution: | 1. Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Surface Physics Laboratory & Department of Physics, Fudan University, Shanghai 200433, P. R. China;
2. Department of Chemistry & Laser Chemistry Institute, Fudan University, Shanghai 200433, P. R. China |
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| Abstract: | Transparent conductive Al-doped ZnO(AZO)and Si-codoped AzO(AZO:Si)films were deposited on square quartz substrates by radio frequency(RF)magnetron sputtering.The effect of distance between the substrate and target(Dst)and the effect of co-doping Si on the electricaI and opticaI properties of the AZO films were systematically investigated.The resistivity,carrier concentration,and mobility were found to be strongly dependent on the Dst values.With a decrease in Dst,the carrier concentration and mobility increased significantly,which resulted in improved conductivity.The lowest resistivity of 4.94× 10-4Ω·cm was obtained at a Dst of 4.5 cm,and this was associated with a carrier concentration of 3.75×1020cm-3 and a mobility of 33.7 cm2·V-1·s-1.X-ray photoelectron spectroscopy(XPS),X-ray diffraction(XRD)spectroscopy,and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at dliferent deposition(Dst)values.Transmittance spectra showed an average transmittance of＞93%in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in Dst.AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful. |
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| Keywords: | AZO |
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