硅基Pt/Ba0.6Sr0.4TiO3/Pt电容器不同温度下的漏电机理研究

利用脉冲激光沉积技术在Pt(111)/TiO2/SiO2/Si(001)衬底上生长了厚度约为200 nm的Ba0.6 Sr04TiO3(BST)薄膜,构架了Pt/BST/Pt平行板电容器,测量了Ba06Sr0.4TiO3薄膜电容器在不同温度下的漏电流,研究了BST薄膜的结构和性能.结果表明BST薄膜为多晶钙钛矿结构,随着测量温度的降低,漏电流密度也随之降低,但是正负偏压下的J-V曲线并不对称,这主要归因于上下Pt电极与BST的界面热处理不同.通过不同导电机理对漏电流密度拟合发现,在负向偏置电压下,Pt/BST/Pt电容器均基本符合欧姆导电机制;而对于正向偏置电压,在低电压下符合欧姆导电机制,并且符合欧姆导电机制的电压范围在不断扩大,在高电压下符合空间限制电流(SCLC)导电机制.     

(001)高度择优取向Ba0.6Sr0.4TiO3/Pt异质结的结构及性能

采用射频磁控溅射法结合高真空后退火处理,在MgO(001)单晶基片上制备了Pt薄膜.应用脉冲激光沉积法在Pt/MgO上进一步生长了Ba0.6Sr0.4TiO3(BST)薄膜.借助X射线衍射仪(XRD)、铁电测试仪、LCR表研究了BST/Pt/MgO的结构和性能.研究发现,700 ℃真空退火可以保证Pt薄膜在MgO基片上实现(001)高度择优生长,以(001)Pt薄膜为模板,可以进一步获得(001)高度择优取向具有铁电性能BST薄膜.在100 Hz测试频率下,BST薄膜最大介电常数为1100、调谐率为81;、品质因数为21;在7 V的电压下,漏电流密度1.85×10-5 A/cm2,进一步分析表明,BST薄膜在0～2.6 V之间满足欧姆导电机制,在2.6～7 V之间满足普尔-弗兰克导电机制.     

非晶Ni-Al阻挡层对快速退火制备的硅基Ba0.6Sr0.4TiO3薄膜结构及物性影响的研究

应用非晶Ni-Al薄膜作为扩散阻挡层,采用磁控溅射法和溶胶-凝胶法在Pt/TiO2/SiO2/Si(001)衬底上制备了Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt电容器结构,研究了在650～800 ℃温度范围内快速退火(RTA)工艺对电容器结构和物理性能的影响.结果表明:在外加电场为-100 kV/cm时,700 ℃和750 ℃退火样品的介电常数达到最大,分别为150和170.非晶Ni-Al薄膜的应用可以有效地降低BST薄膜的漏电流密度.650 ℃退火样品在整个测试电场范围内满足欧姆导电机制;700 ℃、750 ℃和800 ℃退火样品分别在电压低于-3.67 V、-2.65 V和-2.14 V时满足欧姆导电机制,在电压高于-3.67 V、-2.65 V和-2.14 V时满足普尔-弗兰克导电机制.     

La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3铁电电容器的结构和性能研究

采用磁控溅射法和脉冲激光沉积法,在SrTiO3(001)衬底上制备了La0.5Sr0.5CoO3(70 nm)/Pb(Zr0.4Ti0.6)O3(70 nm)/La0.5Sr0.5CoO3(70 nm) (LSCO/PZT/LSCO)铁电电容器异质结.X射线衍射结果表明:LSCO和PZT薄膜均为外延结构.在5 V的外加电压下, LSCO/PZT/LSCO电容器具有较低的矫顽电压(0.49 V),较高的剩余极化强度(41.7 μC/cm2 )和较低的漏电流密度(1.97×10-5 A/cm2),LSCO/PZT/LSCO电容器的最大介电常数为1073.漏电流的分析表明:当外加电压小于0.6 V时,电容器满足欧姆导电机制;当外加电压大于0.6 V时,符合空间电荷限制电流(SCLC)导电机制.     

衬底材料对Ba0.6Sr0.4TiO3薄膜介电性能的影响

采用脉冲激光沉积系统分别在LaAlO3(001)和MgO(001)衬底上沉积了Ba06Sr04TiO3(BST)薄膜,以Pt做电极分别构架了Pt/BST/MgO和Pt/BST/LaAlO3叉指电容器.利用X射线衍射仪、原子力显微镜和Aglient E4980LCR表分别对两种薄膜的结构、表面形貌和介电特性进行表征.研究发现:两种衬底都可以实现BST(001)薄膜的外延生长,MgO和LaAlO3衬底上BST薄膜的晶粒尺寸分别为52 nm和42 nm.在室温40 V偏置电压下,Pt/BST/MgO和Pt/BST/LaAlO3的调谐率分别为39.68;和29.55;,最低损耗分别为0.029和0.053.这说明衬底材料的晶格常数不同,最终导致了BST薄膜介电性能的不同.     

Y3+掺杂BST/ZrO2复合薄膜的制备及介电性能研究

运用溶胶-凝胶法在Si/SiO2/Ti/Pt基底上制备了掺杂不同量的Y3+的单层Ba0.65Sr0.35TiO3 (BST)薄膜和并联结构的BST/ZrO2复合薄膜.研究发现:当BST溶胶中掺入了适量的Y3+后,制备的单层BST的表面形貌得到改善,介电性能提高;掺杂的Y3+为1mol;时单层BST薄膜介电性能最佳,介电常数为400.53;介电损耗为0.0125.BST/ZrO2复合薄膜的电容值相对于单层BST薄膜得到明显提高,当烧结温度为750℃时,BST/ZrO2复合薄膜综合介电性能最佳,介电常数790.12;介电损耗达到0.051.     

钙钛矿型氧化物电极对Ba0.6Sr0.4TiO3薄膜电学性能的影响

采用脉冲激光沉积技术(PLD)在单晶基片LaAlO3(001)、MgO(002)上分别制备Ba06Sr04TiO3/La0.5Sr05CoO3(BST/LSCO)、Ba0.6Sr04TiO3/SrRuO3 (BST/SRO)异质结构,研究了LSCO和SRO底电极对BST薄膜晶相结构、表面形貌及BST薄膜电容器的电学特性的影响.研究发现,沉积在钙钛矿氧化物底电极上的BST薄膜表面平整,并都具有良好的外延生长.由于生长在LSCO底电极BST薄膜的压应力大于生长在SRO底电极的压应力,BST/LSCO异质结构的介电可调率为79.58;,而BST/SRO的介电可调率仅为68.26;,两种底电极上生长的BST薄膜都具有较低的漏电流.     

(La0.5Sr0.5)CoO3为电极的Pb(Zr0.4Ti0.6)O3和Pb(Zr0.2Ti0.8)O3铁电电容器结构及电学性能

分别采用磁控溅射法和溶胶-凝胶法(Sol-gel)制备了(La0.5Sr0.5)CoO3(LSCO)和Pb(Zr1-xTix)O3(PZT)薄膜,在Pt(111)/Ti/SiO2/Si基片上构架了LSCO/Pb(Zr0.4Ti0.6)O3(PZT(40/60))/LSCO和LSCO/Pb(Zr0.2Ti0.8)O3(PZT(20/80))/LSCO铁电电容器,研究了两种铁电电容器的结构和性能。XRD结构分析表明:两种四方相的不同Zr/Ti比例的PZT薄膜均为结晶良好的多晶钙钛矿结构。在5 V测试电压下,LSCO/PZT(40/60)/LSCO和LSCO/PZT(20/80)/LSCO两种铁电电容器的剩余极化强度(Pr)和矫顽场(Ec)分别为:28μC/cm2和1.2 V以及32μC/cm2和2 V。相对于PZT(40/60),PZT(20/80)具有较大的剩余极化强度和矫顽场,是由于其矩形度(c/a)较大。两种电容器都具有较好的脉宽依赖性和抗疲劳性。在5 V的测试电压下,LSCO/PZT(40/60)/LSCO电容器的漏电流密度为3.2×10-5A/cm2,LSCO/PZT(20/80)/LSCO电容器的漏电流密度为3.11×10-4A/cm2,经拟合分析发现:在0～5 V的范围内,两种电容器都满足欧姆导电机制。     

Ba0.6Sr0.4TiO3/PVDF复合材料电性能研究

采用直接沉淀法制备了顺电体钛酸锶钡(Ba0.6Sr0.4TiO3)纳米粉体,用钛酸酯偶联剂将Ba0.6 Sr0.4TiO3纳米粉体改性后与聚偏氟乙烯(PVDF)进行物理共混制备Ba0.6Sr0.4TiO3/PVDF复合材料薄膜.XRD图谱分析表明,Ba0.6Sr04TiO3粉体晶相皆为立方相,经TEM分析发现颗粒形貌呈球形,粒径约为50 nm,分散性好.在低比例纳米Ba0.6Sr0.4TiO3粉体掺入下,复合材料的介电常数和击穿场强与纯PVDF相比有显著提高,在粉体的含量约为7vol;时,材料的介电常数为12,击穿场强达到289 kV/mm,储能密度最大.     

沉积温度对磁控溅射BiFeO3薄膜结构和性能的影响

应用磁控溅射法在以SrRuO3 (SRO)薄膜为缓冲层的Pt/TiO2/SiO2/Si(001)基片上制备了多晶BiFeO3 (BFO)薄膜,构架了SRO/BFO/SRO异质结电容器.采用X射线衍射、铁电测试仪等研究沉积温度对BFO薄膜结构和性能的影响.X射线衍射图谱显示BFO薄膜为多晶结构.在2.5 kHz测试频率下,500℃生长的BFO薄膜呈现比较饱和的电滞回线,2Pr为145μC/cm2,矫顽场Ec为158 kV/cm,漏电流密度约为2.4×104 A/cm2.漏电机制研究表明,在低电场区,SRO/BFO/SRO电容器满足欧姆导电机制,在高电场区,满足普尔-弗兰克导电机理.实验发现:SRO/BFO/SRO电容器经过109翻转后仍具有良好的抗疲劳特性.     

Pt/Hg3In2Te6接触的温度特性研究

运用直流平面磁控溅射技术在Hg3In2Te6单晶表面制备Pt金属电极,形成Pt/Hg3In2Te6接触,采用I-V测试仪在120~260 K温度范围内对其I-V特性进行测量.根据热电子发射模型,计算得到了Pt/Hg3In2Te6的肖特基势垒高度.结果表明:Pt/Hg3In2Te6形成具有整流特性的肖特基接触,肖特基势垒高度为0.46 eV.在120~260 K温度范围内,理想因子随温度增大逐渐从2.93减小至1.42.将Hg3In2Te6单晶制成红外探测器,发现了响应光谱在波长1.55 μm处峰值达到最大,在室温下峰值探测率D* 达到了1011 cm·Hz1/2·W-1.     

低铂Pt/SiC制备及对氧还原反应的催化性能表征

采用乙二醇回流法成功制备了理论含铂量为14;的Pt/SiC阴极催化剂.利用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、X射线光电子能谱(XPS)对催化剂晶型结构、表面形貌和表面电子结构进行了表征.应用循环伏安法和旋转圆盘电极进行电化学测试,研究了Pt/SiC催化剂对氧还原反应催化活性.结果表明,在180℃条件下合成的Pt/SiC催化剂的平均粒径为3.4 nm,Pt是面心立方结构.Pt在SiC表面以0价为主,有利于O2在其表面的吸附和解离.Pt/SiC-180催化剂具有与商业Pt/C(20;)催化剂相近的氧还原催化性能.Pt/SiC-180催化剂的起始还原电位为0.95 V,氧还原过程以4-电子路径为主,且稳定性和抗甲醇中毒性能明显优于商业Pt/C催化剂.优良的催化性能和较低的含铂量使其有望成为低铂燃料电池阴极催化潜在材料.     

Preparation and characterization of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering

SrTiO₃/BaTiO₃ thin films with multilayer structure were deposited on Pt/Ti/SiO₂/Si substrates by a double target radio frequency (RF) magnetron sputtering at 500 °C. The structure and properties of the SrTiO₃/BaTiO₃ thin multilayers have been evaluated by X-ray diffraction (XRD), Auger electron spectrometry (AES), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), electron diffraction (ED) and polarization-electric field hysteresis loop. The XRD result reveals that the SrTiO₃/BaTiO₃ thin multilayers with the designed modulation have been accomplished. The lattice strain increases with layer number. According to AES analysis and morphology observation, a discrete interlayer exists at a position between the interface of Pt electrode and SrTiO₃. The remanent polarization (P_r) and coercive field (E_c) of SrTiO₃/BaTiO₃ thin multilayer are 3.0 μC/cm² and 20.0 kV/cm, respectively. In comparison with BaTiO₃, the device containing dual layers of SrTiO₃/BaTiO₃ possesses higher E_c but lower P_r.     

Crystallization behavior of binary metallic glasses containing Pt

Binary MPt glasses were made by rapid quenching from liquid, where M is Ti, Zr, and Hf. Glass forming compositions were found near eutectics in TiPt, ZrPt and HfPt. Isothermal crystallization for Zr₇₅Pt₂₅ was studied at a temperature range from 780 to 792 K. The non-isothermal transformation was measured by differential scanning calorimetry with heating rates from 5 to 160 K/min. Activation energy for crystallization was obtained from the non-isothermal heating, which is consistent with that from the isothermal annealing.     

Synthesis and Crystal Structure of Charge-Transfer Salt (TTF)[Pt(mnt)2]

Abstract  

The synthesis and crystal structure of the title organic charge-transfer salt (TTF)[Pt(mnt)₂] (TTF = tetrathiafulvalene; mnt = cis-3,4-dimercapto-2-butenedinitrile) is described. The salt crystallizes in the P-1 space group with a = 7.9174(13) ?, b = 11.1583(18) ?, c = 11.2600(18) ?, α = 107.490(3)°, β = 91.631(3)°, and γ = 94.980(3)°. The stoichiometry between TTF and [Pt(mnt)₂] is 1:1. The structure of (TTF)[Pt(mnt)₂] consists of alternating stacks of dimerised TTF⁺ cations and dimerised [Pt(mnt)₂]⁻ anions, linked together by many kinds of short contacts and hydrogen bonds. Both the dimerised TTF⁺ cations and dimerised [Pt(mnt)₂]⁻ anions are arranged in a parallel face-to-face mode.     

Crystal structure of Pt(S2COEt)2

The crystals of Pt(S₂COEt)₂ are orthorhombic, Pbca, with (at 20°C)a=7.799(3),b=7.368(6),c=20.588(7) Å.D _cale=2.46g cm^–3 forZ=4. The platinum atom resides on a crystallographic center of inversion and is bound to the four sulfur atoms of the xanthato ligand in a square planar geometry. The Pt–S distances are 2.313(6) and 2.320(7)Å with an intraligand S–Pt–S angle of 75.1(2)°.     

Growth and characterization of TGS and DTGS single crystals doped with Pt(II), Pt(IV) and L‐alanine

The single crystals of triglycine sulfate doped with bivalent and tetravalent Pt‐ions and with L‐alanine (LADTGS/Pt(II) and LATGS/Pt(IV)) were grown in the ferroelectric phase from low temperature solutions. Using stick seeds the full‐shaped crystals with many growth pyramids have been prepared. The growth rate along the axis c of the doped crystals is much higher than in an undoped one. Morphology, domain structure and P‐E hysteresis loops have been investigated. The effect of the dopant on the growth velocity is explained on the basis of catalytic action of supposed platinum complexes. The first series of the pyroelectric detectors have been prepared from these materials and their fundamental parameters are presented. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Pt掺杂CdS光学性质的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法分析了CdS和Pt掺杂CdS的几何、电子结构和光学性质,计算结果表明Pt掺杂的CdS结构引入了由Pt贡献的导电载流子,增强了CdS的电导率,另外,费米能级下移进入价带.研究表明,Pt掺杂的CdS结构在费米能级附近出现了杂质能级,这是由Pt的5d态电子所形成;在光学性质上,Pt掺杂的CdS在可见光区的吸收系数比理想CdS高,能量损失峰出现红移现象,可见,Pt掺杂的CdS晶体具有更高的光催化活性.