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Preparation and characterization of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering
Institution:1. Department of Electrical Engineering, Cheng Shiu University, 840 Cheng-Ching Road, Niaosung Hsiang, Kaohsiung 83342, Taiwan;2. Department of Materials Science and Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan;3. Department of Materials Science and Engineering, National United University, 1 Lien-Da Road, Kung-Ching Li, Miao Li 360, Taiwan
Abstract:SrTiO3/BaTiO3 thin films with multilayer structure were deposited on Pt/Ti/SiO2/Si substrates by a double target radio frequency (RF) magnetron sputtering at 500 °C. The structure and properties of the SrTiO3/BaTiO3 thin multilayers have been evaluated by X-ray diffraction (XRD), Auger electron spectrometry (AES), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), electron diffraction (ED) and polarization-electric field hysteresis loop. The XRD result reveals that the SrTiO3/BaTiO3 thin multilayers with the designed modulation have been accomplished. The lattice strain increases with layer number. According to AES analysis and morphology observation, a discrete interlayer exists at a position between the interface of Pt electrode and SrTiO3. The remanent polarization (Pr) and coercive field (Ec) of SrTiO3/BaTiO3 thin multilayer are 3.0 μC/cm2 and 20.0 kV/cm, respectively. In comparison with BaTiO3, the device containing dual layers of SrTiO3/BaTiO3 possesses higher Ec but lower Pr.
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