共查询到18条相似文献,搜索用时 78 毫秒
1.
设计了808 nm高功率GaAsP/InGaAlP/GaAs半导体激光器,采用无铝张应变量子阱和非对称宽波导结构,通过优化金属有机物气相沉积(LP-MOCVD)生长条件,提高了外延材料的生长质量,有效提升了激光器转化效率和输出功率。制作了200μm条宽、1500μm腔长的激光器器件,室温连续条件(CW)测试其阈值电流为650 mA,斜率效率高达到1.35 W/A,输出功率在11 W以上,激射波长808.5 nm@5A,水平和垂直发散角分别为8°和30°,较小的发散角有效的提高了输出光功率密度。 相似文献
2.
本文采用低压金属有机化学气相沉积系统(LP-MOCVD)生长出Mg掺杂压应变分别限制多量子阱结构的AlGaInP/GaInP 660 nm LD外延材料,制作出腔长1000 μm、条宽150 μm的宽面半导体激光器.采用选择性Zn扩散在管芯两端面区制作出透明窗口结构来提高器件的腔面光灾变阈值(COD).透明窗口结构激光器最大连续输出功率为3.7 W,是正常结构的激光器COD饱和功率的4.4倍.激光器的特征温度T0为68 K,热阻为4.6 K/W.在热沉温度为20 ℃时进行了500 mW恒功率老化,老化时间为1000 h. 相似文献
3.
通过采用非线性相位匹配的KTiOPO4晶体,成功实现了使用LD泵浦的Nd∶YVO4/Nd∶YVO4/Nd∶YVO4键合晶体激光器声光调Q输出泵浦的光参量振荡.当泵浦功率为8.29 W,声光调制频率为30 kHz时,获得了0.92 W的1570 nm信号光的最大平均输出功率,信号光的最窄脉宽为1.04 ns,最大峰值功率为29.5 kW.光光转换效率:对1064 nm泵浦光为54.4;,而对808 nm二极管泵浦光束只有11.1;. 相似文献
4.
本文采用VHF-PECVD技术制备了不同结构的硅薄膜,分析研究了有、无纯化器对制备薄膜特性的影响.电学特性和结构特性测试结果表明:在10W的功率条件下,使用纯化器时制备的薄膜是光敏性满足非晶硅电池要求的材料,而在不使用纯化器时制备的材料是适用于太阳能电池有源层的纳米硅材料;在30W时,不使用纯化器制备薄膜的晶化明显增大,光敏性也相应的降低,50W的条件表现出相类似的结果,初步分析是氧引起的差别;激活能的测试结果也表明,使用纯化器会降低材料中的氧含量,即表现激活能相对大;另外,沉积速率的测试结果也给出:耗尽区所在位置与是否使用纯化器有很大关系. 相似文献
5.
6.
《人工晶体学报》2009,(1)
最近,中材人工晶体研究院沈德忠院士实验室Nd:YAG透明陶瓷获得重大突破,于2008年12月在中国科学院理化技术研究所许祖彦院士实验室成功获得1064nm的激光输出。实验所用Nd:YAG透明陶瓷的尺寸为3×3×1.5mm3,掺杂浓度为2.7at%,端面镀808 nm和1064 nm增透膜。实验采用端面泵浦,陶瓷块通过铟箔固定在铜质的水冷热沉上,冷却水的温度控制在20℃,抽运源采用LIMO公司的808 nm光纤耦合半导体激光器,光纤芯径200μm。采用对称平-凹腔结构,腔长23 mm,输出镜R=50 mm,T=9%。当吸收功率2.1 W时获得最大输出功率约170mW,光-光转换效率8%,斜效率13.8%。中材人工晶体研究院Nd:YAG透明陶瓷获得激光输出 相似文献
7.
8.
Cr,Nd:GSAG是一种性能优良的激光晶体,但是关于它的LD泵浦激光性能的研究很少.用提拉法生长了Cr,Nd:GSAG晶体,测定了它的化学成分、结构,初步测试了它的激光性能.晶体的(111)面X射线摇摆曲线半高全宽为0.055°.采用Rietveld方法精修X射线粉末衍射谱得到了Cr,Nd:GSAG晶体的原子结构参数、温度因子等.Cr,Nd:GSAG的最强吸收峰位于808.6nm处,吸收截面为3.38×10-20cm2.808nm光激发下,Cr,Nd:GSAG的最强发射峰位于1060nm,发射截面为6.04×10-20cm2,并测得激光上能级4F3/2的荧光寿命为274μs.利用808nm连续波LD泵浦实现了1060nm的激光输出,在输入功率为8.88W时,最大输出功率为0.513W,斜效率为6.73;,光-光转换效率为5.78;.此外还讨论了Cr,Nd:GSAG晶体中的Cr3+与Nd3+之间的能量传递机理. 相似文献
9.
10.
11.
MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers 总被引:1,自引:0,他引:1
L. J. Mawst A. Bhattacharya M. Nesnidal J. Lopez D. Botez A. V. Syrbu V. P. Yakovlev G. I. Suruceanu A. Z. Mereutza M. Jansen R. F. Nabiev 《Journal of Crystal Growth》1997,170(1-4):383-389
Al-free InGaAs/InGaAsP/InGaP laser structures grown by MOVPE have yielded new records in performance. CW front-facet-emitted powers of 5.8 W are achieved from optimized double-quantum-well lasers with 100 μm wide stripes and 1 mm long cavity lengths. Devices with a 0.5 mm cavity length exhibit total power conversion efficiencies as high as 59%. A novel facet passivation technique, consisting of laser-assisted deposition of ZnSe, is shown to increase the COD level by 50%. Single-mode, CW output powers of 400 mW are obtained from triple-core ARROW lasers fabricated by a two-step MOVPE growth process. 相似文献
12.
13.
本文演示了紧凑的绿色和近红外双色连续波激光光源,其发射波长分别为516 nm和775 nm。设计并制造了级联的周期性极化掺镁铌酸锂晶体,用于同时转换通信波长的二次谐波(SHG)和三次谐波(THG),可以在相同温度下获得绿色和近红外激光的输出。通过建立一个单程激光测量系统,在2 W泵浦功率下获得516 nm的0.15 mW绿光和775 nm的1.19 mW的光,晶体温度控制在30.8 ℃。实验结果将为单激光器泵浦的紧凑型双波长共线激光器提供重要的案例。 相似文献
14.
Koji Nakamura Saeko Oshiba Michito Nakajima Shu Gotoh Hideaki Horikawa 《Journal of Crystal Growth》1997,170(1-4):377-382
An extremely low CW threshold current of 670 μA and a high slope efficiency of 0.14 W/A at a high junction temperature of 80°C were obtained with a 200 μm long Al-free InGaAs/GaAs/InGaP buried heterostructure (BH) quantum well laser grown by three-step metal organic vapor phase epitaxy (MOVPE). The maximum energy conversion efficiency of a 500 μm long laser was as high as 50% at a output power level of 1 mW. Regrowth conditions of InGaP layers were found to be crucial for planarizing the grown surface to realize the high performances. 相似文献
15.
采用单晶提拉法成功生长出优质的Gd3+/Yb3+共掺铝酸钇晶体。对晶体的结构、分凝系数、光谱和激光性能进行了表征,结果表明:所生长的晶体空间群为Pnma,属于正交晶系,Yb3+的分凝系数为1.13。从偏振吸收和荧光光谱发现,b偏振方向时,晶体在980 nm处吸收截面为2.14×10-20 cm2,适用于InGaAs 激光二极管泵浦;在1 044 nm处的发射截面为0.39×10-20 cm2,荧光寿命为1.638 ms。此外,对b切向的Gd/Yb∶YAP晶体进行激光实验,在1 μm处实现连续激光输出,斜率效率为23.5%,最大输出功率可达0.51 W。 相似文献
16.
We have demonstrated a laser oscillation in the highest concentration and the shortest Nd-doped silica fiber, an only 5-cm multimode Nd-doped silica fiber. This fiber-core glass was fabricated by the zeolite method, and the glass contained 1.25 wt.% of Nd2O3, which is 10 times higher than previously reported Nd-doped silica fiber. The laser output power was 10 mW at 1062 nm, and the threshold power and slope efficiency of the laser oscillation was 1.39 W and 2.4%, respectively. 相似文献
17.
Hirotoshi Tsuzuki Fumiaki Mori Kenichiro Takeda Motoaki Iwaya Satoshi Kamiyama Hiroshi Amano Isamu Akasaki Harumasa Yoshida Masakazu Kuwabara Yoji Yamashita Hirofumi Kan 《Journal of Crystal Growth》2009,311(10):2860-2863
A grooved Al0.25Ga0.75N underlying layer on an AlN-coated sapphire substrate was used to grow crack free and low dislocation density Al0.25Ga0.75N to successfully realize high-performance UV A light emitters. A light-emitting diode grown on a grooved AlGaN underlying layer exhibited an output power of 12 mW at a DC current of 50 mA for a peak emission wavelength of 345 nm with an external quantum efficiency of 6.7%, which is the highest to date in this wavelength region. We also fabricated UV A laser diodes with an emission wavelength of 356 nm at a pulsed injection current of 414 mA. 相似文献
18.
We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550‐nm loss‐coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40‐nm to 80‐nm in both below and above the multi‐quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献