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1.
利用化学共沉淀法制备了细小均匀的NiCuZn铁氧体前驱体粉体,通过XRD、TG-DSC、激光粒度仪(LPS)、精密阻抗分析仪、振动样品磁强计(VSM)等手段对粉体进行表征.研究前驱体的粒度分布及晶化过程,在不同的预烧温度下样品的磁性能,不同烧结温度的相结构、磁滞回线和磁性能.结果表明:前驱体粒度分布均匀,烧结后可以得到纯相的尖晶石型NiCuZn铁氧体.当预烧温度为500℃,烧结温度为900℃时,样品磁导率μi约为200,品质因数Q约为150,截止频率约为70 MHz.  相似文献   

2.
以硝酸钇、硝酸镁、乙酸镁为原料,采用微波诱导燃烧法合成了体积比50:50的MgO-Y2O3纳米粉体,并研究了粉体的烧结性能.采用DSC-TGA、XRD、SEM、BET、IR等手段对粉体进行了分析表征.研究表明,在500 W微波功率下合成的粉体,经过600℃煅烧2h,结晶性良好,呈现均匀球状,粒度尺寸在30 ~50nm之间,比表面积为35.6m2/g.粉体经过200 MPa压力下等静压成型后,在1300℃温度下保温2h,样品相对密度可达95;.  相似文献   

3.
以硝酸镁、碳酸氢氨为原料,采用均相沉淀法制备碱式碳酸镁,经过不同温度煅烧制得MgO粉体,将粉体压制成型后,经不同温度下烧结,制备MgO陶瓷.TG-DTA、XRD和SEM分析结果表明:碱式碳酸镁的最佳煅烧温度为750 ℃左右,所制得的MgO粉体的晶粒大小为22.25 nm.MgO陶瓷最佳烧结温度为1500 ℃,所得到的陶瓷结构致密、气孔较少、收缩率较高、透光性最好.随着烧结温度的升高,MgO陶瓷中的晶粒有沿(200) 晶面择优生长的趋势.  相似文献   

4.
本文采用化学沉淀法制备了羟基磷灰石(HAP)纳米粉体,利用铁粉和铝粉经过高能机械球磨和热处理工艺制备了金属间化合物Fe3Al粉体;将制备的HAP粉体为基体按质量百分含量加入4;的Fe3Al粉体,经过球磨分散得到复合粉体,然后经过冷压成型和160MPa冷等静压成型及1200℃真空无压烧结,得到羟基磷灰石与金属间化合物Fe3Al的生物复合材料.通过XRD、SEM等测试方法揭示了材料的相组成及微观结构,研究结果表明:采用化学沉淀法制备的羟基磷灰石粉体粒径在100纳米以内,结晶度高、粒度均匀,纯度高;Fe3Al质量含量为4;的Fe3Al/HAP生物复合材料HAP的基本晶体结构没有因为Fe3Al的加入而发生变化,其抗弯强度为89.6MPa,较纯羟基磷灰石陶瓷有了较大的提高,证明Fe3Al增强HAP是有效的.  相似文献   

5.
张柯  黄金亮  李丽华 《人工晶体学报》2006,35(4):809-811,708
采用NaC l-KC l熔盐法合成了生长各向异性的片状SrB i4Ti4O15粉体,用XRD分析了粉体相的结构,用SEM观察了粉体的微观形貌,讨论了不同预烧温度对合成物结构和微观形貌的影响。与固相法相比,熔盐法合成的粉体具有(00l)择优生长的优点。在850~1050℃之间,合成粉体的片状结构趋于明显,粉体生长各向异性随温度的升高呈现出先增加后减小的趋势,各向异性明显的SrB i4Ti4O15粉体的最佳合成温度为900~1000℃。  相似文献   

6.
以金属Al粉和B2O3粉为原料,采用自蔓延高温合成法(SHS)制备AlB2-Al2O3复合粉体.采用X射线衍射仪、扫描电镜和能谱仪分析手段,对所制得的复合粉体进行了表征.研究了Al粉粒度(100目、300目和600目)对自蔓延高温合成方法制备AlB2-Al2O3复合粉体的燃烧学、相组成及微观结构的影响.结果表明:铝粉粒度越小,燃烧温度越高、燃烧波速度越快,复合粉体中AlB2相含量增加,实验测得600目铝粉反应的燃烧温度为2060K,燃烧波速度为2.08 mm/s.复合粉体以AlB2和Al2O3为主晶相,显微结构为数量较少、粒径约5μm的AlB2粉弥散分布于粒径约2 μm的Al2O3和Al的混合粉中.  相似文献   

7.
采用溶胶-凝胶法成功制备了La0.67Ca0.33MnO3粉末,并通过改变预烧温度获取电学性能优异的陶瓷.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、四探针法对不同预烧温度处理后的La0.67Ca0.33MnO3陶瓷的物相、结构、微观形貌和电学性能进行测试,分析预烧温度对材料的晶粒尺寸和电学性能的影响,从而摸索出最佳预烧温度.实验结果表明:样品的结晶性能好物相纯,随着预烧温度的增加,晶粒尺寸、致密度、收缩率和电阻温度系数(TCR)在不断减小,电阻率先减小后增加.在300℃预烧,1450℃烧结得到的样品具有较高的TCR值达到了40.8;·K-1.  相似文献   

8.
采用传统固相法制备Ba(Co1/3Nb2/3)O3微波介质陶瓷。研究了预烧温度对其物相组成、显微结构、烧结性能、微波介电性能的影响。结果表明:在不同预烧温度下制备的陶瓷样品主晶相为复合钙钛矿结构的Ba3CoNb2O9,900℃、1000℃有微量Ba3Nb5O15生成。最佳预烧温度为1100℃,在1380℃烧结4 h时,εr=31.8,Q×f=60164GHz,τf=-15×10-6/℃。合适的预烧温度能有效抑制第二相的生成,提升材料致密度,促使主晶相B位有序排列,进而降低介电损耗。  相似文献   

9.
采用真空热压烧结工艺制备了Ti(C,N)基纳米复合金属陶瓷模具材料,并研究了该模具材料的力学性能与微观结构.结果表明,当烧结温度为1450℃,保温时间为10 min时,模具材料的硬度、断裂韧性和抗弯强度分别为14.57 GPa、8.6 MPa·m1/2和1144 MPa;当烧结温度为1450℃,保温时间为30 min时,模具材料的硬度、断裂韧性和抗弯强度分别为16.29 GPa、7.53 MPa·m1/2和1035 MPa.在这两种烧结工艺下制备的模具材料均具有良好的综合力学性能,烧结工艺得到优化,可以满足不同硬度材料的成型需求.在对模具材料的微观结构分析时发现,模具材料的断裂方式是以沿晶断裂为主的穿晶与沿晶断裂的混合断裂模式.  相似文献   

10.
机械合金化-放电等离子烧结制备Ti_2SnC导电陶瓷   总被引:1,自引:0,他引:1  
采用放电等离子烧结(SPS)技术对机械合金化合成的Ti2SnC粉体进行烧结,研究了烧结温度对机械合金化和SPS烧结Ti2SnC导电陶瓷块体相组成、显微组织及微结构的影响。结果表明:机械合金化合成Ti2SnC粉体在800~1000℃之间进行SPS烧结可以获得纯度较高的致密块体,在1000℃进行烧结时,孔隙率低于2%。在600~1000℃范围内,烧结块体中Ti2SnC的含量随烧结温度的提高逐渐增加;Ti2SnC的晶粒大小随温度升高逐渐长大。  相似文献   

11.
The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.  相似文献   

12.
Rakin  V. I. 《Crystallography Reports》2020,65(6):1033-1041
Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...  相似文献   

13.
SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.  相似文献   

14.
We investigate the possibility of controlling the curvature parameters of parabolic mirrors that are modular elements of two types consisting of a base and thin inserts placed at the opposite side of the work surface. In the first type of modular elements, bending is controlled by the difference in the coefficients of the thermal expansion of the base and inserts. In the second type of elements, the profile is changed by the piezoelectric straining of the inserts under an electric field. A correlation is established between the parameters of modular elements and their surface curvature profile.  相似文献   

15.
A review of measurement of thermophysical properties of silicon melt   总被引:2,自引:0,他引:2  
Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi3 existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.  相似文献   

16.
Crystal chemical characteristics of the α and β modifications of Zn2V2O7 are calculated based on in situ high-temperature X-ray measurements. The expansion of the structure is found to be strongly anisotropic up to the negative volumetric thermal expansion of the α-Zn2V2O7 unit cell in the temperature range of 300–600°С, α V =–17.94 × 10–6 1/K. The transformations of the “hard” and “soft” sublattices with an increase temperature and at the phase transition are considered in detail. It is shown that the negative volumetric thermal expansion of α-Zn2V2O7 is due to the degeneracy of the zigzag-like shape of zinc–oxygen columns at constant distances between their vertices.  相似文献   

17.
Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.  相似文献   

18.
I. Avramov 《Journal of Non》2011,357(22-23):3841-3846
The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts xi of all oxides dissolved in SiO2, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature Tr , at which viscosity is ηr = 1013 [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, li is a product of molar part xi and a specific dimensionless coefficient 0  ki  1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature Tr,SiO2 of pure SiO2.  相似文献   

19.
Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.  相似文献   

20.
Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...  相似文献   

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