0.2wt% Bi2O3、CuO、B2O3对5Ca0.6La0.267TiO3-5Ca(Mg1/3Nb2/3)O3微波介质陶瓷的性能影响

采用传统的固相反应法,研究了三种烧结助剂Bi2O3、CuO、B2O3对5Ca0.6La0.267TiO3-5Ca(Mg1/3Nb2/3)O3微波介质陶瓷的烧结性能和介电性能的影响。实验结果表明,掺入0.2wt%的Bi2O3、CuO、B2O3产生了液相,有效地降低了体系的烧结温度。Bi2O3和CuO的加入没有改变烧结体的微观形貌,它们介电常数和品质因数随烧结温度的变化趋势和体积密度趋于一致,均在体积密度最大时最高。当温度大于1300℃时,加入0.2wt%B2O3试样有柱状晶体生成,并随着烧结温度的升高而增多,柱状晶体的存在可能促使Q×f值较大的提高,当烧结温度过高时(1350℃),由于柱状晶体过多使得烧结体不均匀导致Q×f值下降。Bi2O3、CuO、B2O3的加入没有改变烧结体的晶相组成,因此所有烧结体均有近零的温度系数。结果表明,加入0.2wt%B2O3的5Ca0.6La0.267TiO3-5Ca(Mg1/3Nb2/3)O3在1325℃烧结温度具有最佳的介电性能:εr=54.87,Q×f=55 726 GHz,τf=-0.6 ppm/℃。     

高品质因素MgTiO3-SrTiO3系微波陶瓷介电性能的研究

以分析纯MgO、TiO2、SrCO3为原料,采用固相法制备了(1-x)MgTiO3-xSrTiO3(x=0～0.065)系列微波介质陶瓷材料,研究了添加SrTiO3后,体系的晶相组成、显微结构、微波介电性能之间的变化规律。研究表明,随着SrTiO3添加量的增加,陶瓷的体积密度、介电常数εr、谐振频率温度系数τf都呈增加趋势,但无载品质因素与谐振频率的乘积Q×f的值随添加量的增加呈下降趋势。当x=0.035时,陶瓷可在1380℃保温2 h烧结,此时陶瓷获得近零的频率温度系数:τf=-2.8×10-6/℃、高的品质因素:Q×f=16714 GHz、介电常数:εr=21.5。     

退火工艺对0.9Al2O3-0.1TiO2微波介质陶瓷性能与结构的影响

采用反应烧结法制备0.9Al2O3-0.1Ti O2微波介质陶瓷,研究了退火时间,退火气氛对其物相组成、显微结构、微波介电性能的影响。结果表明:经过退火后,第二相Al2Ti O5分解,陶瓷的表面规整,致密度高;延长退火时间以及合适的退火气氛可以有效地提高0.9Al2O3-0.1Ti O2陶瓷的Q×f值。在空气气氛下,1350℃烧结4 h,氧气气氛下1100℃退火20 h的0.9Al2O3-0.1Ti O2微波介质陶瓷具备优异的介电性能:εr=12.50,Q×f=79812 GHz,τf=0.13 ppm/℃。     

硼酸对BaAl2Si2O8陶瓷相转变和微波介电性能的影响

采用传统固相烧结工艺制备BaAl2Si2O8(BAS)基微波介质陶瓷。研究添加H3BO3对BaAl2Si2O8基微波介质陶瓷的烧结特性、相转变、微波介电性能以及微观结构的影响。结果表明,H3BO3可以将BAS陶瓷烧结温度降低200℃左右,可以有效促进六方钡长石向单斜钡长石转变。当H3BO3添加量为10mol%时,具有最佳的综合微波介电性能,εr=6.3,Q×f=14700 GHz。H3BO3添加量为30mol%时,τf值最接近零值,为-13 ppm/℃。     

Zn0.99Cu0.01Al2O4-SrTiO3微波陶瓷介电性能的研究

以分析纯Zn O、Cu O、Al2O3、Ti O2以及Sr CO3为原料,采用传统固相法制备了(1-x)Zn0.99Cu0.01Al2O4-x Sr Ti O3(ZCAST,x=0~0.045)微波介质陶瓷,利用X射线衍射仪、扫描电镜和网络分析仪对其结构、形貌和微波介电性能进行表征。研究了不同x值对ZCAST陶瓷相组成、显微结构以及微波介电性能的影响。结果表明,ZCAST陶瓷的体积密度、介电常数εr随着Sr Ti O3含量的增多而增大。当x=0.04具有最佳微波介电性能:介电常数εr=14.12,品质因数Q×f=28700 GHz,频率温度系数τf=-1.8×10-6/℃。     

Ba(Zn_((1-x)/3)Ni_(x/3)Nb_(2/3))O_3微波介质陶瓷的微观结构

本文采用传统的固相陶瓷烧结工艺,利用Ni2+取代Ba(Zn1/3Nb2/3)O3 的B位Zn2+形成固溶体来研究其微观结构.XRD表明,系统的主晶相为立方钙钛矿的BZNN,并有少量第二相如Ba5Nb4O15、BaNb2O6等存在.随Ni2+含量增加,系统晶格常数a减小;而随烧结温度升高,a逐渐增大.系统在1500 ℃下烧结时为固相烧结;当烧结温度为1550 ℃时,系统由固相烧结转变为液相烧结.较低温度下烧结时,在低角度区有很微弱的1∶ 2有序相产生;烧结温度升高,无序相增加,有序相消失.     

掺杂和包覆H_3BO_3对BZN陶瓷烧结和介电性能的影响

以Bi2O3、ZnO和Nb2O5粉末为原料,通过固相反应合成了以(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN)为主晶相的陶瓷。分别以液相包覆法和固相混合法引入助烧剂B2O3降低BZN的烧结温度。研究了B2O3对BZN陶瓷的烧结和介电性能的影响。结果表明,液相包覆B2O3后,BZN陶瓷的烧结温度从1100℃降至900℃。H3BO3溶液的浓度为0.9 mol/L,900℃烧结3 h所制BZN陶瓷的介电性能良好:εr=150,Q×f=228,τf=-362 ppm/℃。     

烧结助剂MnCO_3对0.80Sm(Mg_(1/2)Ti_(1/2))O_3-0.20Ca_(0.8)Sr_(0.2)TiO_3微波介质陶瓷的性能影响

采用传统固相反应法,研究了烧结助剂MnCO3对0.80Sm(Mg1/2Ti1/2)O3-0.20Ca0.8Sr0.2TiO3微波介质陶瓷的烧结性能和介电性能的影响。结果表明,烧结助剂MnCO3的引入未改变陶瓷的晶相组成。添加适量的MnCO3可以降低体系的烧结温度,获得较优的性能;添加过量的MnCO3或烧结温度过高会产生微裂纹,增加了陶瓷的介电损耗,降低致密性。在1500℃烧结,保温3 h,添加0.50wt%MnCO3,0.80Sm(Mg1/2Ti1/2)O3-0.20Ca0.8Sr0.2TiO3陶瓷获得最佳的介电性能:εr=29.80,Q×f=56900 GHz,τf=7.53 ppm/℃。     

Al2O3掺杂对Ca0.2Sr0.05Li0.375Sm0.375TiO3微波介电性能的影响

采用固相烧结法制备了掺杂Al2O3的Ca0.2Sr0.05Li0.375Sm0.375Ti O3微波介质陶瓷。研究了Al2O3掺杂对Ca0.2Sr0.05Li0.375Sm0.375Ti O3的助烧效果、物相结构、显微组织和微波介电性能的影响规律。结果表明:Al2O3的添加降低了Ca0.2Sr0.05Li0.375Sm0.375Ti O3陶瓷的烧成温度,但对物相基本无影响。此外,高含量Al2O3的添加能促进晶粒细化。此体系陶瓷的最佳介电性能为:Al2O3含量为0.9wt%且烧成温度为1250℃时,εr=110.8、Q·f=4159.6 GHzτf=49.4 ppm/℃。     

ZnO-B2O3-SiO2玻璃对硅酸锌陶瓷结构与微波介电性能的影响

研究了不同添加量的ZnO-B2 O3 -SiO2 (ZBS)玻璃作为烧结助剂对硅酸锌陶瓷的结构及微波介电性能的影响.研究结果表明:添加ZnO-B2 O3-SiO2玻璃的陶瓷烧结后其主晶相仍呈硅锌矿结构,并且硅酸锌陶瓷的烧结温度从1300℃降低到900℃.随着玻璃添加量的增加,陶瓷的介电常数(εr)和品质因数(Qf)呈逐渐降低的趋势,当玻璃添加量为20 wt％时,900℃保温2h所制备的陶瓷具有较优良的微波介电性能:εr=6.85,Qf =31690 GHz,τf=- 28×10-6/℃,在低温共烧陶瓷领域有着潜在的应用价值.     

Flux growth of PbMg1/3Ta2/3O3 single crystals

Single crystals of PbMg_1/3Ta_2/3O₃ (PMT) were grown by the flux method. The PbO–Pb₃O₄–B₂O₃ system was used as a solvent. Transparent and light yellow PMT single crystals of rectangular shape and dimensions up to 10×6×4 mm³ were obtained. For the applied growth conditions only, the crystals of the perovskite structure were grown. X-ray diffraction tests showed that at room temperature PMT exhibits cubic symmetry with lattice parameter a=4.042(1) Å. Dielectric studies pointed to relaxor properties of PMT. The characteristic broad and frequency-dependent maximum of dielectric permittivity was observed at 179.7 K (1 kHz).     

Ordering in BaMg1/3Ta1/3Nb1/3O3 ceramics: An X-ray Rietveld analysis

Structure analysis of polycrystalline BaMg_1/3Ta_1/3Nb_1/3O₃ ceramics has been carried out using the Rietveld technique, wherein the B cations (Mg, Ta, and Nb) have the same occupancy with a size difference and charge imbalance. The compound has an ordered trigonal structure as well as a disordered cubic phase depending on the preparation temperature. The weight percentage of the ordered phase is found to increase with a rise in the calcination temperature. Published in Russian in Kristallografiya, 2006, Vol. 51, No. 2, pp. 259–263. The text was submitted by the authors in English.     

Pressure-induced amorphization of La1/3NbO3

La_1/3NbO₃, an A-site cation deficient double perovskite, has been studied under pressure by synchrotron X-ray powder diffraction and Raman spectroscopy. In contrast to other highly distorted perovskites, transforming to post-perovskite on compression, La_1/3NbO₃ undergoes irreversible pressure induced amorphization at ~ 14.5 GPa. Over a wide range of pressure before that transition it presents an almost linear volume decrease versus pressure, accompanied by convergence form orthorhombic to a cubic unit cell. The Raman spectroscopy also shows an amorphization at the same pressure. However, where upon full decompression the X-ray diffraction pattern remains amorphous, new Raman peaks become active.     

Pb(In1/2Nb1/2)O3-Pb(Ni1/3Nb2/3)O3-PbTiO3压电陶瓷的介电、铁电和压电性能

采用两步法制备了0.30Pb(In1/2 Nb1/2)O3-(0.70-x)Pb(Ni1/3Nb2/3)O3-xPbTiO3(PIN-PNN-PT,x=0.33,0.35,0.37,0.39)压电陶瓷.研究了PIN-PNN-PT压电陶瓷的相结构、介电、铁电和压电性能.研究表明位于准同型相界(MPB)的组分0.30PIN-0.33PNN-0.37PT具有最佳电学性能,其居里温度TC、压电系数d33、平面机电耦合系数kp、自由介电常数ε二介电损耗tanδ、剩余极化Pr、矫顽场EC分别为200℃、386 pC/N、50;、2692、0.045、34 μC/cm2、18 kV/cm.结果 显示PIN-PNN-PT三元系相比于PNN-PT有更高的居里温度,同时保持了优异的压电性能.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Pb(Sc_(1/2)Nb_(1/2))O_3-Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3-PbZrO_3弛豫铁电晶体的生长及表征

采用高温溶液法生长了准同型相界(MPB)四元弛豫铁电单晶Pb(Sc_(1/2)Nb_(1/2))O_3-Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3-PbZrO_3,得到较大尺寸且具有规则外形的立方单晶。研究结果表明所生长的晶体为钙钛矿结构,立方晶粒平整的暴露面均为(001)面;晶体以层状方式生长,生长机制为搭桥生长;所生长晶体的矫顽场EC~3.52 k V/cm,三方四方相变温度Tr-t~104℃,居里温度Tc~149.5℃,压电常数d33~1089 p C/N,剩余极化强度Pr~25.4μC/cm2;随着频率增加,晶体的相变弥散度减小。     

Energy transfer in Eu3+-Yb3+ and Tb3+-Yb3+ system in glasses

The behavior of the phonon-assisted energy transfer between trivalent rare-earth ions in glasses was investigated. The ions Eu³⁺ and Tb³⁺ as energy donors and Yb³⁺ as acceptor were selected. The energy gap between the levels of the donor and acceptor was estimated on the basis of the energy diagram of each ion determined from absorption and emission spectra. The probability for the transfers of (Eu, ⁵D₀-⁷F₆): (Yb, ${}^2\text{F}{}_{\mathrm{<mtext>7</mtext><mtext>2</mtext>}}\text{-}{}^2\text{F}{}_{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$) and (Tb, ⁵D₄-⁷F₀): (Yb, ${}^2\text{F}{}_{\mathrm{<mtext>7</mtext><mtext>2</mtext>}}\text{-}{}^2\text{F}{}_{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$) in silicate, borosilicate, phosphate and germanate glasses was measured in the temperature range of liquid-nitrogen temperature - 650K. The probability of transfer was the smallest in phosphate glass and B₂O₃ had the effect of increasing it. In germanate glass the dependence of the probability of the energy gap was relatively weak. These results were correlated to the difference in the phonon energy and the strength of the electron-lattice coupling in each glass.     

一种新的非线性光学材料—Na3Sm2（BO3）3

本文采用固相反应法合成了一种新的硼酸盐化合物Na3Sm2(BO3)3,以Na2CO3-H3BO3为助熔剂,用悬挂铂丝法获得了3mm×2mm×0.5mm的透明单晶,X射线粉末衍射分析表明,该化合物属正交晶系,晶胞参数a=0.50585nm,b=1.10421nm,c=0.70316nm.红外光谱测量证实晶体结构中含有BO33-基团,粉末倍频效应测试表明该化合物具有非线性光学效应,粉末倍频信号强度接近KDP.     

Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films

A Ruddlesden–Popper-type planar fault was introduced at the SrRuO₃/BaTiO₃ interface of a SrRuO₃/BaTiO₃/SrRuO₃ heterofilm system using different processing conditions for the individual film layer. This fault occurs continuously and homogeneously along the interface, forming an extra Sr-rich sub-nanometer layer. The structure of the fault and the lattice behavior in the interface area were characterized on an atomic scale by properly imaging all types of atomic columns, especially the pure oxygen columns, by means of spherical-aberration-corrected high-resolution transmission electron microscopy. Information on local interdiffusion and lattice strain at the interface was obtained by quantitative evaluation of the atomic resolution images.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.