聚氨酯泡沫粉末在羟基磷灰石晶须多孔陶瓷材料中的应用

采用液氮冷却破碎法,将聚氨酯海绵泡沫制备成10 ～ 400 μm左右的微米级粉末,用于羟基磷灰石晶须多孔陶瓷材料的制备和研究.通过SEM表征了聚氨酯泡沫粉末的表面形貌,XRD、SEM、FT-IR等分析了烧结后多孔陶瓷材料的成分、形貌以及聚氨酯的残留.同时研究了聚氨酯泡沫粉末添加量对最终产品孔隙率和力学性能的影响.结果表明:650℃煅烧后的多孔陶瓷材料主要含有羟基磷灰石和β-TCP双相;多孔结构为蜂窝直通孔和侧壁孔,尺寸分别为300μm左右和10 ～ 80 μm.添加32;聚氨酯泡沫粉末的多孔陶瓷其最大平均抗压强度为1.18MPa;当聚氨酯添加量为38;时,材料的平均孔隙率最高,达90.48;.     

SiO2改性超长羟基磷灰石晶须的制备及研究

通过水热共沉淀反应法成功制备出超长羟基磷灰石晶须,并通过溶解正硅酸乙酯与羟基磷灰石晶须烧结得到二氧化硅表面改性羟基磷灰石.通过X射线衍射仪(XRD),红外分析(FT-IR)和扫描电镜(SEM)对样品的晶相组成、形貌、晶须长度进行了表征.结果表明:所得晶须的平均长度为230 μm,SiO2球形颗粒均匀的分布在晶须表面,其直径为600 nm,二氧化硅改性羟基磷灰石晶须可显著提高义齿基托树脂的抗拉强度.     

聚乳酸/羟基磷灰石晶须复合多孔支架的制备与性能研究

采用溶剂浇铸/真空挥发/粒子沥滤方法,采用氯化钠为造孔剂、氯仿为溶剂,最终制备出聚乳酸(PLA)/羟基磷灰石晶须(HAw)复合多孔支架.通过SEM表征了聚乳酸支架的表面形貌,用XRD、SEM、FT-IR等分析了加入不同量HAw的聚乳酸的成分、形貌以及结构特征,并研究羟基磷灰石晶须的添加量对支架的孔洞结构参数、力学性能及生物性能的影响,结果表明:可以通过控制氯化钠的粒度及用量来调节支架的孔径及孔隙率;聚乳酸(PLA)/羟基磷灰石晶须(HAw)复合多孔支架结构均匀,具有较高的孔隙率和良好的孔隙连通性;支架孔隙率在83.94;～91.08;范围内,可以满足骨组织工程对支架材料的要求;复合多孔支架的抗压强度达到5.72～ 12.73 MPa,在羟基磷灰石晶须质量比为10;时达到最大值,为12.73 MPa.     

明胶/双相磷酸钙多孔陶瓷支架的制备及性能研究

羟基磷灰石与人体骨骼的无机成分相似,具有良好的生物相容性及骨传导性能,β-磷酸三钙(β3-TCP)是生物降解和生物吸收型生物活性材料,其降解产物Ca、P可进入活体循环系统形成新骨,成为理想的硬组织替代材料.以碳酸钙(CaCO3)和磷酸(H3PO4)为原料,用直接沉淀法合成双相磷酸钙陶瓷粉体,随后采用激光成型技术制备了聚氨酯泡沫载体,通过泡沫浸渍法制备了多孔明胶/双相磷酸钙陶瓷支架,并采用戊二醛交联改善支架性能.通过XRD、SEM等方法分析复合多孔支架的成分、形貌以及结构特征,并评价复合生物支架的降解性、孔隙率、力学性能和细胞毒性等.结果 表明:实验制备的粉体为双相磷酸钙,成分为β-磷酸三钙(β-TCP)和羟基磷灰石(HAP),其中,β-TCP为主相.该生物支架具有良好的孔隙结构,包含规则的直通孔和不规则的连通孔,直通孔孔径在800～950μm之间,不规则连通孔在300 ～500 μm之间,支架平均孔隙率达到83.1;;支架平均抗压强度达到1.06 MPa,满足于骨组织工程对支架材料的力学要求;该生物支架的细胞毒性为0级或1级,无细胞毒性,具有良好的降解性能.     

陶瓷微珠直接堆烧制备多孔莫来石陶瓷及性能研究

以高纯石英粉、氧化铝粉以及玻璃粉作为主要原料,首先通过颗粒稳定泡沫法结合离心雾化干燥装置制备得到SiO2-Al2O3陶瓷微珠,然后将其紧密堆积于坩埚中,随后经1500 ℃下直接堆积烧结1 h,利用空心微珠高温下自发泡,成功制备孔分布均匀的多孔莫来石陶瓷.研究了SiO2-Al2O3陶瓷微珠中高纯石英粉、氧化铝粉和玻璃粉组成对多孔莫来石陶瓷性能的影响.该方法简便易行,可控性强.通过该方法可制得气孔率高达85.4;,抗压强度为(3.69±0.86) MPa,低介电常数为1.70的多孔莫来石陶瓷,有望应用于透波材料领域.     

利用无机胶凝材料制备莫来石多孔陶瓷

本文利用无机胶凝材料成功制备了莫来石多孔陶瓷.以硅藻土和ρ-Al2O3为原料,AlF3和MoO3为添加剂,利用ρ-Al2O3遇水硬化的特点,来实现陶瓷浆料的固化成型,再将成型后的陶瓷生坯经高温烧结得到莫来石多孔陶瓷.该方法绿色环保,整个制备过程中无有机物的排放.通过使用XRD、SEM等表征测试手段,研究了烧结温度对莫来石多孔陶瓷的相组成、微观形貌、线收缩率、开孔孔隙率以及抗压强度的影响.实验结果表明,制备的莫来石多孔陶瓷由生长良好的莫来石晶须构成,在1500℃下烧结的莫来石多孔陶瓷孔隙率可达到82.3;.     

热压烧结制备羟基磷灰石/透辉石陶瓷复合材料

采用热压烧结方法制备了羟基磷灰石/透辉石复相陶瓷材料,分析了羟基磷灰石基体与透辉石之间的界面结合、扩展及渗透过程,测试了复合材料的断裂韧性、硬度、抗弯强度与添加剂含量的对应关系,并对复相陶瓷材料的微观结构与力学性能进行了研究.结果表明:在1320℃,28MPa条件下热压烧结制备的复相陶瓷材料,其抗弯强度、断裂韧性均有明显提高,抗弯强度达到90MPa,断裂韧性达到1.07MPa·m1/2.     

发泡剂含量对YAG多孔陶瓷的性能影响研究

采用共沉淀法合成YAG粉体,经过配料、干压成型和真空烧结制备YAG多孔陶瓷材料,并研究发泡剂含量对YAG多孔陶瓷的性能影响.结果表明:YAG多孔陶瓷随着发泡剂含量逐渐增多,其气孔率逐渐增高,抗压强度逐渐降低.烧结温度升高,气孔率下降,抗压强度升高.保温时间延长,气孔率降低,抗压强度升高,但是YAG多孔陶瓷的性能对于烧结温度和保温时间而言,烧结温度相对更为敏感.综合整个烧结工艺及性价比,YAG多孔陶瓷发泡剂含量为15wt;并在1550℃烧结保温lh较为适宜.     

利用长石原料制备发泡陶瓷

利用长石为主要原料制备发泡陶瓷,探究了不同实验条件(长石含量、发泡剂含量和烧结温度)对发泡陶瓷的影响.利用长石制备的发泡陶瓷具有优异隔热性能,其导热系数达0.13 W/(m·K),平均孔径为1.30 mm.泡孔之间的孔壁上分布有平均孔径小于100 μm的微孔,这种微孔与大孔分级分布的结构是其具有良好保温性能的关键原因.     

尿素添加量对水浴合成羟基磷灰石晶须 组成、形貌和结构的影响

通过不同尿素添加量研究水浴合成法制备羟基磷灰石晶须的过程参数,分析对产物的组成、形貌和结构产生的影响.采用X射线衍射仪(XRD)、红外光谱(FT-IR),扫描电镜(SEM)与能谱(EDS),高分辨率透射显微镜(HRTEM)等分析手段,对HA晶须的相结构、化学基团、微区成分和微观结构进行了表征.结果表明,在水浴条件下,可以成功地合成结晶度高、组成均一的羟基磷灰石晶须.随着尿素量的提高晶须长径比呈现先增加后降低的趋势,在微观形貌上羟基磷灰石晶须逐渐由针状向绒球状转化.通过红外分析,随着尿素的增加,在尿素缓慢分解的过程中,通过二氧化碳和氨的逐步释放,羟基基团、磷酸根基团和碳酸根基团在逐步加强.通过透射电子显微镜的分析,可以证明晶须沿c轴方向生长,恰当控制尿素的量,可以调控晶须的长径比,也可以通过尿素量的调控,获得一种绒球状羟基磷灰石粉体.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Considerations on the structure and physical properties of B2O3-SiO2 and GeO2-SiO2 glasses

Data of density, refractive index and thermal expansion coefficient for B₂O₃-SiO₂ and GeO_2-SiO₂ glasses have been analyzed. The volumes of the structural units are the same found for the vitreous B₂O₃, GeO₂ and SiO₂. The volume of any structural unit is constant over the entire composition region of the glass system. The same has been found for the differential refraction and unit refraction of the structural units in these glasses. Different features are observed for the differential expansion of the structural units. There is a considerable change with composition in the differential expansion of BO₃, GeO₄ and SiO₄ units. The effect is attributed to a change in the asymmetry of vibrations with the number of Si-O-B or Si-O-Ge linkages in the matrix. The thermal expansion coefficient is mainly determined by the contribution of B₂O₃ or GeO₂ in the concerned glasses.     

Molecular structure and crystal packing of uncomplexed 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C22H18N4O2

The X-ray crystal structure of 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C₂₂H₁₈N₄O₂, is determined. The crystal packing is dominated by phenyl stacking interactions. Weak C–H···N hydrogen bonds help align the molecules. C–H··· hydrogen bonding is not apparent.     

Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd_1 − xFe_xTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd_1 − xFe_xTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5-6.5 M Ω, the activation energies lie in the range of 63-133 meV, and the samples were show the ‘p’ type conductivity.     

空位浓度对纤锌矿CdS电子结构和光学性质影响的第一性原理研究

本文基于密度泛函理论的平面波超软赝势方法,采用第一性原理研究了含Cd空位缺陷CdS和含S空位缺陷纤锌矿CdS的几何结构、能带结构、电子态密度及光学性质。通过计算分析可知,含Cd空位缺陷的CdS体系均为p型半导体,含S空位缺陷的CdS体系跃迁方式均由直接跃迁变为间接跃迁。Cd、S空位缺陷的CdS体系的态密度总能量降低。空位CdS体系相较于本征CdS体系的静介电常数均有提高,并随着空位浓度的增大而增大,Cd空位缺陷体系更为明显,极化能力得到显著提升。空位Cd的CdS体系相较于本征CdS体系在红外波段存在明显的吸收,空位S的CdS体系相较于本征CdS体系在可见光波段存在明显的吸收。