激光晶体Nd3+:Gd3Ga5O12中的核心和小面生长

Nd3+:Gd3Ga5O12(Nd:GGG)晶体是热容固体激光器的一种重要的工作介质.采用提拉法沿〈111〉方向生长出了Nd:GGG单晶,利用激光器、应力仪和偏光显微镜等仪器和方法,对晶体的小面生长及核心等缺陷进行了观察,分析了小面生长的机理,并提出了消除这些缺陷的办法.通过研究,为改善生长工艺、生长大尺寸优质Nd:GGG晶体提供参考.     

Bix（PrGdYb）3—x（FeAl）5O12晶体薄膜的助熔剂液相外延生长

本文介绍了采用助熔剂法和液相外延技术生长单晶薄膜的工艺技术。使用这种方法生长出了Ｂｉｘ（ＰｒＧｄＹｂ）３－ｘ（ＦｅＡｌ）５Ｏ１２磁光晶体薄膜，并测试了薄膜的磁光性能。     

RIG型磁光薄膜的研究进展及应用

随着光通信技术与光子集成电路的发展,非互易性器件作为光通信系统中重要的组成部分得到了越来越广泛的研究与应用。基于磁光效应制成的磁光隔离器和环行器是目前应用最为广泛的非互易性器件,为了将非互易性器件整块集成在硅片上,需制备性能与块状磁光材料相当的磁光薄膜。在近红外通信波段(1 550 nm),以钇铁石榴石(Y₃Fe₅O₁₂,YIG)为代表的稀土铁石榴石(RIG)具备优良的磁光效应,是最具应用前景的磁光材料之一。研究发现,使用稀土离子对YIG薄膜进行掺杂可以有效改善其磁光性能,尤其是Bi³⁺和Ce³⁺掺杂的YIG表现出巨法拉第效应。本文首先介绍了法拉第效应原理,介绍了三种常见磁光薄膜的生长方法,回顾了近年来的主要研究成果,介绍了磁光薄膜在光隔离器和环行器中的应用,最后对磁光薄膜的未来发展趋势进行了展望。     

溶胶-凝胶法制备Nd:GGG透明陶瓷纳米粉体

溶胶-凝胶法制备出Nd3+∶Gd3Ga5O12(Nd:GGG)透明陶瓷纳米粉体.以TG-DTA、红外光谱、XRD、TEM、电子衍射和电子能谱等测试手段,对前驱体及烧成粉体的结构和形貌进行了研究.结果表明,Nd∶GGG超细粉体的最佳烧成温度为1000℃,粉体样品粒度小、粒径均匀,在70～100nm之间.     

大尺寸Nd3+:GGG激光晶体的单胞参数计算和组分分析

采用提拉法生长了直径为136mm的Nd3+:GGG单晶,通过X射线衍射和X射线荧光对晶体的结构、成分沿生长方向和径向的变化进行了测试分析.结果表明单胞晶格参数沿晶体的生长方向和径向均逐步变大,平均变化率分别为3.1×10-6(A)/ mm、1.3×10-5(A)/mm;沿着晶体的生长方向,Nd和Gd组分按指数函数规律逐步增加,而Ga组分则按高斯函数逐渐减小.沿晶体径向从内到外,Nd、Gd组分按线性规律逐渐增大,其变化率分别为0.0014 at;/ mm、0.00924 at;/ mm,Ga组分则按线性规律减小,变化率为-0.0117 at;/ mm.这些变化主要是由于Nd3+的分凝效应、Ga挥发所导致.     

YIG和YAlIG单晶的助熔剂提拉法生长和表征

用助熔剂提拉法生长了YIG(Y3Fe5O12)和YAlIG(Y3AlxFe5-xO12)单晶,尺寸约为φ10×7.0mm.经XRD测试,晶体均为立方晶系,晶格常数分别为:YIG,a=1.2376nm;YAlIG,a=1.2089nm.YAlIG晶体在红外波段透过率较高;经X射线荧光测定,其分子式为Y3Al2.96Fe2.04O12.室温下YAlIG磁化率大大低于YIG,初步推测可能是Al3+同时进入晶体结构中的四面体和八面体空位.     

铽镓石榴石单晶的生长、表征及其挥发机理研究

使用预先烧结好的多晶原料,在一定比例的N2和CO2混合气氛下,采用提拉法生长出了高质量的铽镓石榴石(TGG)单晶.采用XRD、ICP和热力学计算进行分析,结果表明,晶体生长过程中的挥发机制为Tb3Ga5O12的分解,分解产物为Tb3 GaO6,Ga2O和O2.CO2被Ga2O还原产生O2,抑制了Tb3Ga5O12的分解.TGG单晶的化学分子式存在Tb富集或Ga缺失,为Tb3Ga4.4～4.5O11.1～11.3非化学计量比相.将晶体毛坯加工成φ2.8 mm×10.7 mm的晶棒,消光比测试结果表明镀增透膜后消光比平均可提高18.8 dB.     

YBCO/ND-Y2O3/YBCO超导薄膜的制备及其特性研究

采用光辅助金属有机物化学气相沉积技术,在LaAlO3(100)单晶衬底上外延制备约500 nm厚YBCO/ND-Y2O3/YBCO薄膜.用X射线衍射技术分析薄膜的物相结构和外延特性,通过扫描电子显微镜观察薄膜的表面与截面形貌.主要研究了不同生长时间的Y2 O3纳米点对YBCO超导薄膜性能的影响.Y2 O3纳米点生长时间为2Os样品的临界电流密度达到2.4 MA/cm2(77 K,0T),与未生长Y2O3纳米点的YBCO薄膜相比,其临界电流密度提高20;.分析表明,薄膜中的Y2O3在YBCO薄膜内部起到了有效钉扎中心作用,提高了临界电流密度.     

导模提拉法生长Tb3Sc2Al3O12(TSAG)晶体及性质表征

本文采用导模提拉法成功生长了Tb3Sc2Al3O12 (TSAG)晶体,并对所生长晶体进行了物相分析和单晶结构分析,探讨了多晶原料的烧结温度对晶体颜色的影响.Sc3+和Al3+的浓度分布测试表明,导模提拉法能较好地克服因分凝效应引起的Sc3+浓度分布不均,可以生长获得浓度分布均匀的TSAG晶体.磁光性能测试表明,Sc3+掺入对晶体在400～1100 nm波长范围内的磁光性能影响不大,所生长TSAG晶体的费尔德常数仅比Tb3Al5O12 (TAG)晶体低6; ～8;.     

c轴倾斜CuCr1-xMgxO2(x=0,0.02)薄膜的外延生长

采用脉冲激光沉积技术在0°,5°,10°c轴倾斜α-Al2 O3 (0001)衬底上制备出c轴生长CuCr1-xMgx O2(x=0,0.02)薄膜.用x射线衍射Φ扫描分析薄膜与衬底(000l)晶面的结晶取向关系为＜1100＞ CuCrO2∥＜1120＞α-Al2O3,并进一步通过θ扫描、2θ扫描表征5°和10°c轴倾斜衬底上CuCrO2薄膜与衬底(0006)晶面之间的倾斜角度差值由0.43°增加到1.76°,得到薄膜c轴外延性随衬底倾斜角变大而变差.AFM观察生长在α-A12 O3 (0001)衬J芪上的CuCr1-xMgxO2薄膜为层状形貌,且倾斜衬底上薄膜晶粒尺寸减小,晶界增加.p-T测量曲线表明:相比平直衬底,10°倾斜衬底上CuCrO2薄膜的电阻率略有升高,这是由于倾斜衬底上薄膜结晶质量较差及晶界对载流子散射增强所致,与XRD和AFM结果相一致.     

Crystal and Molecular Structures of C6H5CH2SOCH2CONHCH2C6H5 and C6H5SOCH2CON(iC3H7)2

Abstract  The crystal structures for two of the ligands C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) have been determined by X-ray diffraction. These compounds crystallize in orthorhombic system with space groups and cell parameters, Pca21(no. 29), a = 8.4600(5) ?, b = 5.3534(5) ?, c = 32.136(2) ?, V = 1455.42(15) ?³ and Pna21(no. 33) a = 17.5563(11) ?, b = 5.7902(4) ?, c = 14.2866(9) ?, V = 1452.30(16) ?³, respectively. These molecules are stabilized in solid state by various intra and intermolecular hydrogen bonding interactions to give polymeric structures. The reported IR spectra of these compounds in solid state could be explained on the basis of the observed intermolecular hydrogen bonding interactions. Index Abstract  The title compounds C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) were prepared by the oxidation of corresponding sulfides with H₂O₂/SeO₂ in methanol and their structures were determined. The structures show that the SO and CO groups are having “anti” configuration in 1 and “syn” configuration in 2. Electronic supplementary material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

Enantiomorphism of the Ca3Ga2Ge4O14 compound and comparison of the Ca3Ga2Ge4O14 and Sr3Ga2Ge4O14 structures

The absolute crystal structures of two enantiomorphic forms of the Ca₃Ga₂Ge₄O₁₄ crystals (a = 8.075(1) ?, c = 4.9723(6) ?, space group P321) with the positive and negative senses of the optical activity are determined using X-ray diffraction analysis. The final R factors are as follows: R = 1.75% and R _w = 2.57% for the crystal with the positive sense of the optical activity and R = 1.86% and R _w = 2.78% for the crystal with the negative sense of the optical activity. The replacement of the Ca²⁺ ions by larger Sr²⁺ ions (with the formation of the Sr₃Ga₂Ge₄O₁₄ compound) leads to an anisotropic expansion of the crystal lattice (with a more considerable increase in the lattice parameter a as compared to the lattice parameter c), a change in the occupation of the 1a and 3f positions by the Ga³⁺ and Ge⁴⁺ ions, and symmetrization of the octahedra and tetrahedra forming the structural framework. The shape of the dodecahedron changes so that its size along the polar electric axis 2 increases significantly. This change is the main factor responsible for the increase in the piezoelectric activity of the Sr₃Ga₂Ge₄O₁₄ compound as compared to the piezoelectric activity of the Ca₃Ga₂Ge₄O₁₄ compound. Original Russian Text ? B.V. Mill, A.A. Klimenkova, B.A. Maximov, V.N. Molchanov, D.Yu. Pushcharovsky, 2007, published in Kristallografiya, 2007, Vol. 52, No. 5, pp. 816–823.     

Potentiodynamic polarization studies on amorphous Zr46.75Ti8.25Cu7.5Ni10Be27.5, Zr65Cu17.5Ni10Al7.5, Zr67Ni33 and Ti60Ni40 in aqueous HNO3 solutions

Potentiodynamic polarization studies were carried out on virgin specimens of Zr-based bulk amorphous alloys Zr_46.75Ti_8.25Cu_7.5Ni₁₀Be_27.5 and Zr₆₅Cu_17.5Ni₁₀Al_7.5, and conventional-type binary amorphous alloys Zr₆₇Ni₃₃ and Ti₆₀Ni₄₀ in solutions of 0.2 M, 0.5 M and 1.0 M HNO₃ at room temperature. The values of the corrosion current density (I_corr) for the bulk amorphous alloy Zr_46.75Ti_8.25Cu_7.5Ni₁₀Be_27.5 were found to be comparable with those of Zr₆₅Cu_17.5Ni₁₀Al_7.5 in 0.2 M and 0.5 M HNO₃, but the value of I_corr for the former was almost three times more than that of the latter in 1.0 M HNO₃. In the case of conventional binary amorphous alloys, Ti₆₀Ni₄₀ showed lower value of I_corr as compared to Zr₆₇Ni₃₃ in 0.5 M and 1.0 M HNO₃ and a comparable value of I_corr in 0.2 M HNO₃. In general, the binary Ti₆₀Ni₄₀ displayed the best corrosion resistance among all the alloys in all the cases and the corrosion current density (I_corr) for all the alloys was found to increase with the increasing concentration of nitric acid. It is noticed that the bulk amorphous alloys do not possess superior corrosion resistance as compared to conventional binary amorphous alloys in aqueous HNO₃ solutions. The observed differences in their corrosion behavior are attributed to different alloy constituents and composition of the alloys investigated.     

Ionic conduction in As2S3---Ag2S, GeS2---GeS---Ag2S and P2S5---Ag2S glasses

The glass-forming region in the system P---S---Ag was determined and density, thermal expansion, dc conductivity and the transport number of Ag ions were measured for P₂S₅---Ag₂S glasses found in the P---S---Ag system. The results for the transport number measurement show that P₂S₅---Ag₂S glasses are purely ionic conductors owing to the Ag ion migration, like most of the As₂S₃---Ag₂S and GeS₂---GeS---Ag₂S glasses reported previously. Glass structure and ionic conduction processes in As₂S₃---Ag₂S, GeS₂---GeS---Ag₂S and P₂S₅---Ag₂S glasses are discussed, based on their ionic conductivity and density data. The structural concept of -Ag₂S was applied to these glasses, which suggests that the Ag ions in the glasses are distributed in the available Ag ion sites in the non-conducting framework composed of both S anions and As, Ge or P cations. In each system the ionic conductivity increases linearly with increasing Ag⁺/total cation (%) in glass composition, the determining factor being the activation energy for ionic conduction alone. Thus, the activation energy in these glasses depends predominantly upon the molar ratio of Ag ions to total cation in the glass, irrespective of the kind of system. Small differences in the activation energy among the three systems can be interpreted as arising from differences in the field strength of As, Ge and P cations.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.     

Phase separation and crystallization in the system SiO2-Al2O3-P2O5-B2O3-Na2O glasses

The phase separation and crystallization behavior in the system (80 − X)SiO₂ · X(Al₂O₃ + P₂O₅) · 5B₂O₃ · 15Na₂O (mol%) glasses was investigated. Glasses with X = 20 and 30 phase separated into two phases, one of which is rich in Al₂O₃-P₂O₅-SiO₂ and forms a continuous phase. Glasses containing a larger amount of Al₂O₃-P₂O₅ (X = 40 and 50) readily crystallize and precipitates tridymite type AlPO₄ crystals. It is estimated that the phase separation occurs forming continuous Al₂O₃-P₂O₅-SiO₂ phase at first, and then tridymite type AlPO₄ crystals precipitate and grow in this phase. Highly transparent glass-ceramics comparable to glass can be successfully obtained by controlling heat treatment precisely. The crystal size and percent crystallinity of these transparent glass-ceramics are 20-30 nm and about 50%, respectively.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Spectroscopic properties of Er-doped Na2O-Sb2O3-B2O3-SiO2 glasses

Spectroscopic properties of Er³⁺-doped Na₂O-Sb₂O₃-B₂O₃-SiO₂ glasses have been investigated for developing 1.5-μm broadband fiber amplifiers. An intense 1.5-μm near infrared emission with a broad full width at half maximum (FWHM) of 88 nm has been obtained for Er³⁺-doped 5Na₂O-20Sb₂O₃-35B₂O₃-40SiO₂ glass upon excitation with a 980 nm laser diode. The obtained emission cross-section of the ⁴I_13/2 → ⁴I_15/2 transition and the lifetime of the ⁴I_13/2 level of Er³⁺ ions are 6.8 × 10⁻²¹ cm² and 0.36 ms, respectively. It is noted that the product of the emission cross-section and the FWHM of the glass, σ_e × FWHM, is as great as 598.4 × 10⁻²¹ cm² nm, which is comparable or higher than that of Er³⁺-doped bismuth-based and tellurite-based glasses. These special optical properties encourage in identifying them as important materials for potential applications in high performance optics and optical communication networks.     

The growth and structure of Pb3Ga2Ge4O14 and Ba3Ga2Ge4O14 single crystals

Conditions for the flux synthesis of Pb₃Ga₂Ge₄O₁₄ and Ba₃Ga₂Ge₄O₁₄ single crystals and their solid solutions Pb_{3 − x} Ba_xGa₂Ge₄O₁₄ are studied. Structural analysis showed that the Ga³⁺-and Ge⁴⁺-cation positions in flux-grown Pb₃Ga₂Ge₄O₁₄ and Ba₃Ga₂Ge₄O₁₄ single crystals are not mixed. __________ Translated from Kristallografiya, Vol. 49, No. 2, 2004, pp. 325–328. Original Russian Text Copyright ? 2004 by Bezmaternykh, Vasil’ev, Gudim, Temerov. This work was presented at the National Conference on Crystal Growth (NCCG-2002, Moscow).     

Refinement of the crystal structures of the La3Ta0.5Ga5.5O14 and La3Nb0.5Ga5.5O14 compounds

This paper reports on the results of accurate X-ray structural investigations of single crystals La₃Ta_0.5Ga_5.5O₁₄ (a = 8.2260(1) ?, c = 5.1207(1) ?, R/R _w = 1.09%/1.10%, 3868 unique reflections) and La₃Nb_0.5Ga_5.5O₁₄ (a = 8.2237(1) ?, c = 5.1247(1) ?, R/R _w = 1.02%/1.03%, 3735 unique reflections) (space group P321, Z = 1, sinϑ/λ|_max ≈ 1.34 ?⁻¹ for both compounds). Using sets of data with a large number of high-angle reflections makes it possible to reliably compare the crystal structures by applying statistical tests. The structural differences between the La₃Ta_0.5Ga_5.5O₁₄ and La₃Nb_0.5Ga_5.5O₁₄ crystals are weakly pronounced, which correlates with the closeness of their piezoelectric characteristics. Original Russian Text ? A.P. Dudka, B.V. Mill, Yu.V. Pisarevsky, 2009, published in Kristallografiya, 2009, Vol. 54, No. 4, pp. 599–607.