电化学共沉积法制备GaAs纳米结构薄膜及表征

以含一定比例Ga与As2O3的酸性溶液(pH=2.5)作为前驱溶液,以Pt片为对电极,饱和甘汞电极(SCE)为参比电极,室温下利用三电极电化学站在Ti衬底上恒压沉积GaAs薄膜.然后对GaAs薄膜进行退火处理.利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM),以及荧光光度计(PL)分别对不同沉积电压下所制备的薄膜的晶体结构,薄膜形貌以及光学性能进行分析表征.结果表明:沉积电压以及退火过程对GaAs薄膜的形貌、晶体结构、薄膜质量有很大影响,所制备的GaAs薄膜退火前晶化程度较低,部分粒子表现出不均匀团聚.光致发光峰为红光发射,且单色性好.退火后的GaAs薄膜为面心立方晶型,呈纳米颗粒状,薄膜的光电性能明显提高.     

GaAs/Ga2O3复合多晶薄膜的生长与光学性能研究

采用热蒸发沉积法,以砷化镓和氧化镓粉末为原料,以氧化铟为催化剂,在800 ℃的氩气气氛中,在(100)砷化镓基片表面上沉积生成GaAs/Ga2O3薄膜.以配有成分分析的场发射扫描电镜(FESEM)、X-射线衍射仪(XRD)、光致发光仪(PL)等测试方法对所得薄膜的成分、形貌、晶体结构和光学性能进行了表征.研究结果表明:薄膜以规整的波浪形均匀地覆盖在砷化镓基片表面上,所得薄膜为GaAs/Ga2O3复合多晶薄膜,光致发光峰为强的红光发射;薄膜的生长机理为固-气-固过程,薄膜中砷元素含量的增加与氧化铟的作用有关.     

PECVD提高SiO2薄膜致密性的研究

为了在高功率980 nm激光器工艺中制备高质量、均匀性好、致密性高的SiO2薄膜,本文研究了PECVD的反应压强、射频功率、SiH4与N2O流量比对SiO2薄膜的沉积速率和BOE腐蚀速率的影响.实验采用BOE腐蚀速率来反映SiO2薄膜的致密性,采用傅里叶红外光谱仪得到SiO2薄膜的红外吸收特性,采用原子力显微镜(AFM)观察SiO2薄膜的表面形貌.通过优化各工艺参数最终获得了BOE腐蚀速率为9.18 nm/s的SiO2薄膜.     

La∶BiFeO3/Bi0.5(Na0.85K0.15)0.5TiO3纳米复合薄膜的铁电特性

采用脉冲激光沉积技术(pulsed laser deposition,PLD),在Pt/Ti/SiO2/Si基片上制备了La0.1Bi0.9FeO3(BFO),Bi0.5(Na0.85K0.15)0.5TiO3(BNKT)和BFO/BNKT纳米复合薄膜.结果表明,复合薄膜的铁电特性比单层的BFO、BNKT薄膜有所增强.利用压电力显微镜(piezoresponse force microscopy,PFM)观察到了铁电畴.由于畴结构内部矫顽力分布不均匀,导致极化反转随时间改变,疲劳测试结果也证实了该结论.随着转换周期的增加,极化随之增强.运用PFM测量了纳米级的压电响应,同样证实了BFO/BNKT复合薄膜中的畴反转现象.     

沉积压力对磁控溅射纳米硅薄膜结构和性能影响

采用射频(RF)磁控溅射方法在玻璃衬底上制备了氢化纳米硅薄膜,研究了沉积压力(4～9 Pa)对薄膜结构和性能的影响.利用XRD、SEM、紫外-可见光分光光度计、傅立叶红外吸收光谱仪(FT-IR)及四探针电阻测试仪等对薄膜结构和性能进行了表征.结果表明:随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸降低;薄膜光学带隙在2.04～2.3 eV之间,且随着沉积压力的提高而增加;薄膜具有SiH、SiO、SiH2和SiH3振动吸收峰, 随着沉积压力的增加,SiH、SiH2振动吸收峰向高波数移动,薄膜方块电阻在132～96 Ω/□,且随着沉积压力的升高而降低.     

大范围ReS2纳米带的化学气相沉积制备及特性表征

采用化学气相沉积方法,在整个SiO2(300 nm)/Si衬底上制备出了大面积、高质量的单层及多层ReS2纳米带,纳米带的长度可达150μm.利用光镜、原子力显微镜(AFM)、荧光(PL),拉曼(Raman)以及X射线光电子能谱分析(XPS)等手段对所得不同层数的ReS2样品进行了表征.结果表明:所制备的ReS2纳米带的拉曼信号与化学气相沉积方法制备的(CVD)单层及多层的薄膜材料差别不大,而其荧光峰出现了明显的展宽,且峰位出现了明显的蓝移.化学气相沉积法(CVD)制备ReS2纳米带操作简单,可控性与可重复性高,对其基础研究和未来潜在应用有着比较重要的现实意义.     

不同衬底表面上大晶粒多晶Si薄膜的制备

利用高频感应加热化学气相沉积(HFCVD)工艺,以H2稀释的SiH4作为反应气体源,分别在n-(111)Si衬底上常规热生长的SiO2层、织构的SiO2层和纳米晶粒多晶Si薄膜表面上,制备了具有均匀分布的大晶粒多晶Si膜.采用扫描电子显微镜(SEM)和X射线衍射(XRD)等检测手段,测量和分析了沉积膜层的表面形貌、晶粒尺寸、密度分布与择优取向等结构特征.结果表明,多晶Si膜中Si晶粒的尺寸大小和密度分布不仅与衬底温度、SiH4浓度与反应气压等工艺参数有关,而且强烈依赖于衬底的表面状态.本实验获得的最好的薄膜中,Si晶粒平均尺寸约为2.3 μm,密度分布约为3.8×107/cm2.对薄膜的沉积机理分析表明,衬底表面上Si原子基团的吸附、迁移、成核与融合等热力学过程支配着大晶粒多晶Si膜的生长.     

氢钝化对低温沉积nc-SiOx/SiO2多层薄膜发光特性影响机制研究

采用等离子体增强化学气相沉积技术实现了nc-SiOx/SiO2多层结构薄膜在220℃的低温沉积,并对其450℃N2+ H2形成气体退火前后的微结构及其发光特性进行了研究.结果表明,直接沉积的纳米硅多层薄膜未观察到较明显的室温发光,而形成气体退火后样品出现峰值位于780 nm附近较强的光致发光,归因于活性氢能有效钝化纳米硅表面悬键,提高了材料的发光强度.结合瞬态发光谱分析,采用量子限制-发光中心模型可以合理解释纳米硅多层结构的发光特性.     

纳米石墨和纳米碳管薄膜在低电场下的稳定场发射

采用微波等离子体化学气相沉积法(MPECVD)制备出了纳米石墨和纳米碳管混合薄膜材料.通过扫描电镜(SEM)和拉曼光谱(Raman)对薄膜材料的结构和形貌进行了分析.研究了薄膜材料的场发射性能.场发射结果显示:其开启电场为0.7 V/μm1,在较低电场下(3.7 V/μm1)即可获得5.2 mA/cm2的电流密度,此电场下发射点密度可达1.6×107 cm-2,发射点均匀,亮度稳定.迭代法计算结果表明制备的纳米石墨和纳米碳管混合薄膜材料的功函数仅为3.2 eV.这些表明该薄膜材料为优良的场发射冷阴极材料.     

温度对SiO2表面上磁控溅射制备Ge纳米点的生长模式和尺寸的影响

采用磁控溅射技术在SiO2/Si(100)表面上制备了一系列不同生长温度的Ge纳米点样品.原子力显微镜(AFM)的实验结果表明:不同衬底温度下Ge纳米点在SiO2薄膜上的生长模式和尺寸分布有所不同.当衬底生长温度达到500 ℃时,SiO2开始与Ge原子发生化学反应,并形成"Ge纳米点的Si窗口".在此温度条件下,外延生长实验可获得尺寸均匀且密度高达3.2×1010 cm-2的Ge纳米点.     

Influence of initial growth parameters on the structural and optical properties of GaAs on (001) Si

The structural and optical properties of GaAs on (001) Si substrates were investigated by transmission electron microscopy (TEM) and low-temperature photoluminescence (PL). It was found that the success of the two-step growth technique is controlled by the quality (morphology and defect density) of the low-temperature grown AlGaAs nucleation layer. GaAs epilayers grown on low V/III ratio AlGaAs nucleation layers exhibit improved surface morphologies and structural properties. These results were confirmed by optical measurements where it was shown that the best PL response was obtained from GaAs epilayers in which the initial AlGaAs nucleation layers were deposited at a low V/III ratio.     

Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

ZnO/MgF₂/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF₂ buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF₂ and ZnO than that between fused silica and ZnO.     

Chemical Deposited Pd on GaAs

The chemical deposition of palladium on n and p‐GaAs from an aqueous solution of PdCl₂, in strong acid medium can be an alternative technique for contacts on GaAs. This paper presents the variations of palladium films thickness (measured by an interferometric method) as a function of solution concentration, reaction time and substrate conductivity. There are presented data concerning the adhesion of palladium films (measured by a mechanical method) related to the film thickness. From a comparative study concerning the adhesion of evaporated films such as: Au/n‐GaAs, Ag/n‐GaAs, AuGe/n‐GaAs and Pd/n‐GaAs, it results the conclusion that the adhesion of palladium films are of the same order of magnitude as the metallic films evaporated without an annealing procedure.     

利用Al/AlAs中间层调控GaAs在Si(111)上外延生长的研究

为了实现Ⅲ-V器件在硅基平台上单片集成,近年来Ⅲ-V半导体在硅衬底上的异质外延得到了广泛研究。由于Ⅲ-V半导体与Si之间大的晶格失配以及晶格结构不同,在Si上生长的Ⅲ-V半导体中存在较多的失配位错及反相畴,对器件性能造成严重影响。而Si(111)表面的双原子台阶可以避免Ⅲ-V异质外延过程中形成反相畴。本文利用分子束外延技术通过Al/AlAs作为中间层首次在Si(111)衬底上外延生长了GaAs(111)薄膜。通过一系列对比实验验证了Al/AlAs中间层的插入对GaAs薄膜质量的调控作用,并在此基础上通过低温-高温两步法优化了GaAs的生长条件。结果表明Al/AlAs插层可以为GaAs外延生长提供模板,并在一定程度上释放GaAs与Si之间的失配应力,从而使GaAs薄膜的晶体质量得到提高。以上工作为Ⅲ-V半导体在硅上的生长提供了新思路。     

Investigation of semi-insulating oxygen-doped GaAs

We found Oxygen-doped GaAs crystals to be suitable materials for CO₂ laser optical component preparation, with application at 10.6 μm. An optical transmission of 55% in the IR spectrum range, between 2 and 15 μm has been reached for such a GaAs type material. The GaAs crystals that we have analysed were grown by two procedures: Horizontal Bridgman (HB) and Liquid Encapsulated Czochralski (LEC). The HB method has been used for obtaining pure (undoped) crystals, while the oxygen-doped GaAs ingots were grown by LEC technique. The two types of samples processed in the same manner as regards mechanical polishing and chemical etching, which were investigated by Hall measurements, optical transmission spectrometry and elastic recoil detection analysis (ERDA) technique. The GaAs:O (LEC) has near semi-insulating properties as can be observed from the results of the electrical resistivity and Hall effect measurements. The ERDA spectrum shows an intense signal of oxygen in the bulk of GaAs:O (LEC) crystals, while the oxygen signal is not present in the ERDA spectrum of the undoped GaAs (HB). We consider that these results could recommend the ERDA technique as a possible qualitative and quantitative analysis in an ion-beam accelerator for oxygen content in oxygen-doped GaAs crystals. The analysis is not sensitive to the native oxide, as could be seen by measuring GaAs (HB) undoped crystals.     

采用MOCVD方法在GaAs衬底上生长ZnO(002)和ZnO(100)薄膜

采用金属有机化学汽相沉积生长法（MOCVD），在不同的衬底表面处理条件和生长温度下，在GaAs衬底上生长出了ZnO薄膜。随着化学腐蚀条件的不同，可生长出优先定位不同的ZnO（100）和ZnO（002）薄膜。该薄膜的晶体结构特性是由X光衍射谱仪（XRD）所获得的，而其光学特性是由光荧光谱仪（PL）来测的。与ZnO（002）相比，ZnO（100）薄膜具有更优越的晶体结构特性，并且在同样的生长温度下都具有相似的光学特性。对于腐蚀条件不同的GaAs衬底所进行的XPS分析结果表明，ZnO薄膜优先定位变化的主要原因在于腐蚀过程中形成的富As层。     

Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compounds

GaAs and GaN epilayers were grown on GaAs substrates by gas source molecular beam epitaxy technique using triethylarsine (TEAs) and diethylarsine (DEAsH) as As sources, and dimethylhydrazine (DMHy) as an N source. It was found that GaAs grows layer by layer even when organic arsine molecular sources are used. Cubic GaN was found to grow epitaxially on sufficiently nitrided surfaces of GaAs (001) substrates, in contrast with the growth of hexagonal GaN on GaAs (111) surfaces. It was also found that nitridation of GaAs surfaces does not occur when DEAsH and DMHy beams are supplied onto the GaAs substrates, simultaneously. Thus, GaN/GaAs multilayers were obtained only by intermittent supply of a DEAsH beam.     

碳电极钙钛矿太阳能电池光吸收层厚度对光伏性能的影响研究

本文使用两步法,通过控制PbI₂(DMSO)溶液的浓度制备了不同厚度的有机-无机杂化钙钛矿(MAPbI₃)光吸收层薄膜,并组装了大面积基于碳电极且无空穴传输层的钙钛矿太阳能电池。对不同厚度MAPbI₃光吸收层薄膜的晶相、光吸收性质、表面形貌、元素组成进行分析,并进一步测试了基于MAPbI₃薄膜制备的钙钛矿太阳能电池的光伏性能。结果表明,MAPbI₃光吸收层薄膜厚度与PbI₂(DMSO)浓度呈正相关关系,浓度为1.3 mol/L的PbI₂溶液制备的MAPbI₃薄膜厚度约为350 nm,具有较好的结晶度和光吸收强度,且薄膜表面致密平整,无明显缺陷,基于350 nm MAPbI₃光吸收层的钙钛矿太阳能电池获得了8.48%的光电转换效率。     

Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures

We have grown GaAs epitaxial films on MnZn-ferrite substrates using MnAs buffer layers and investigated their heterointerfaces with glazing incidence-angle X-ray reflectivity and X-ray photoelectron spectroscopy. It has been found that the heterointerfaces for this structure are quite abrupt and the roughness at the GaAs/MnAs and MnAs/MnZn-ferrite interfaces are 1.1 and 0.2 nm, respectively. We also found that the diffusion of atoms through the GaAs/MnAs interface into the GaAs film is negligible. These results indicate that the MnAs buffer layer for the GaAs/ferrite structure is chemically stable and promising for the application to the future magnetic electronics.     

Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition

A series of ZnO films were grown on GaAs(0 0 1) substrates at different growth temperatures in the range 250–720°C by metalorganic chemical vapor depostion. Field emission scanning electron microscopy was utilized to investigate the surface morphology of ZnO films. The crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry. The optical and electrical properties of ZnO films were also investigated using room-temperature photoluminescence and Hall measurements. Arrhenius plots of the growth rate versus reciprocal temperature revealed the kinetically limited growth behavior depending on the growth temperature. It was found that the surface morphology, structural, optical and electrical properties of the films were improved with increasing growth temperature to 650°C. All the properties of the film grown at 720°C were degraded due to the decomposition of ZnO film.