磁性Fe3O4/膨胀石墨对亚甲基蓝的吸附性能研究

以膨胀石墨(EG)为载体,采用简单的水热法,制备出磁性Fe3O4/膨胀石墨(MEG).采用X-射线衍射仪(XRD)和扫描电子显微镜(SEM)对MEG的组成结构和形貌进行表征.以亚甲基蓝为目标污染物,探讨了溶液pH值、吸附时间、盐离子浓度和亚甲基蓝初始浓度对吸附性能的影响,并对吸附动力学和吸附等温线进行研究.结果表明:当亚甲基蓝初始浓度为50 mg·L-1,pH值为7,吸附时间为60 min时,对亚甲基蓝的去除率和吸附量分别为97.03;和48.52 mg·g-1,随着溶液中盐离子Na+和Ca2浓度的增加,MEG对亚甲基蓝的吸附性能降低;MEG对亚甲基蓝的吸附行为符合拟二级动力学模型和Langmuir等温吸附模型.MEG可以使用磁铁进行分离回收,回收率达95.71;.5次吸附-再生后,吸附量仍较高为41.72 mg·g-1,说明MEG吸附剂具有较稳定的重复使用能力.     

四方体MgO的制备及对有机染料的吸附

以六水氯化镁和六次甲基四胺为原料,采用水热法合成四方体MgO,考察其对有机染料甲基橙和亚甲基蓝的吸附行为.通过TGA-DTA、SEM、XRD、N2-sorption和FT-IR等手段表征样品.结果表明,原料浓度、温度和表面活性剂对四方体MgO结构的形成影响较小,而反应时间的延长有助于有序结构的组装.温度170℃、时间24h、MgCl2·6H2O与C6H12N4浓度比为1∶2和表面活性剂PVP是制备四方体MgO的最佳条件.在溶液浓度10mg · L-1的单一吸附实验过程中,四方体MgO对甲基橙和亚甲基蓝的去除率分别为91.3;和22.3;,吸附过程均为单层吸附且符合Langmuir等温吸附模型和伪二级吸附动力学方程.在溶液浓度40 mg·L-1、甲基橙和亚甲基蓝浓度比3∶1的混合溶液吸附过程中,四方体MgO对甲基橙和亚甲基蓝的去除率分别为80.1;和97.9;.     

Ce/TiO2纳米管阵列的制备及光催化性能的研究

采用电化学阳极氧化法在钛表面制备TiO2纳米管阵列,并用稀土铈对其修饰改性.以甲基橙为目标降解物,考察了Ce3+溶液浓度、甲基橙溶液的初始浓度和初始pH对铈改性的TiO2纳米管光催化活性的影响.结果表明:Ce3+溶液的浓度存在一个最佳值,当Ce3+溶液浓度为0.01 mol/L,在10 mg/L,pH =3的甲基橙溶液中光催化活性最好.光照4h后,甲基橙的降解率达83％.     

绿色合成载银壳聚糖及其等温线、动力学及抑菌性

以吸附绿色合成法制备载银壳聚糖,采用X射线衍射(XRD)、场发射扫描电镜(FESEM)和热重分析研究其微观结构和热稳定性,并研究了壳聚糖对银离子的吸附模型,以此为抗菌材料,通过平板扩散板法评价载银壳聚糖的抗菌效果。实验结果表明:银离子在多糖结构中的引入影响了其原有的晶体结构,提升了其热稳定性。壳聚糖对银离子的吸附等温线与Langmuir和Dubinin-Radushkevich方程相一致,说明了壳聚糖中银离子的吸附过程符合单层吸附和化学吸附,并且根据Langmiur方程计算壳聚糖对银离子的最大吸附量为478.09 mg/g,含银量为32.34%,与Dubinin-Radushkevich计算结果一致。银含量饱和的载银壳聚糖对大肠杆菌(Escherichia coli)和金黄色葡萄球菌(Staphylococcus aureus)具有良好的抗菌性能,其最小抑菌浓度为80 μg/mL。     

介孔SiO2/Fe3O4中空微球孔径调控以及漆酶固定性能研究

以自制的β-FeOOH中空微球为内核,十六烷基三甲基溴化铵(CTAB)为模板剂,正硅酸乙酯(TEOS)为硅源,以不同的方式添加扩孔剂癸烷(Decane)和1,3,5三甲基苯(TMB),经水解缩聚反应、焙烧和还原后得到介孔SiO2/Fe3O4中空微球.重点研究了扩孔剂的加入方式对中空微球微观形态和漆酶固定化性能的影响.结果表明,扩孔剂的加入量和加入顺序对扩孔效果产生很大影响,其中先加入癸烷和后加入1,3,5-三甲基苯的复合扩孔方式所制得介孔SiO2/Fe3O4中空微球的扩孔效果最优.当n(TMB+ Decane)/n(CTAB)=2,n(TMB)/n(CTAB)=1时,介孔SiO2/Fe3O4中空微球的介孔层的厚度约50 nm,其比表面积约为855 m2·g-1,孔体积为1.23 cm3 ·g-1,平均孔径为5.72 nm,中空微球对漆酶的固定量达到276 mg/g;固定化漆酶活性较游离漆酶活性有一个更好的pH和温度稳定性.介孔SiO2/Fe3O4中空微球在外加磁场中可实现快速分离.     

二维晶体Ti3C2的制备及其对有机染料的吸附性能研究

采用49;的氢氟酸刻蚀Ti3AlC2成功制备了层状二维晶体Ti3C2,并研究了其作为吸附剂对有机染料罗丹明B(RhB)、亚甲基橙(MO)和亚甲基蓝(MB)的吸附性能.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、气体吸附分析仪、紫外可见分光光度计等对样品物相、晶体结构和孔隙结构及比表面积进行了表征,考察了温度和染料浓度对Ti3C2吸附效果的影响.结果表明,二维晶体Ti3C2对有机染料具有较好的吸附性能,随着温度的升高吸附速率有明显的提高;Ti3C2对RhB和MB的吸附效果随着温度的升高均有明显的提高,但对100 mg/L的MO,在25℃时吸附效果最好.45℃时,Ti3C2对浓度为50 mg/L的染料的吸附速率RhB＞ MB＞ MO.     

炭黑吸附水热法制备纳米TiO2粉体及其光催化降解甲基橙

利用炭黑吸附钛酸异丙酯水热法制得锐钛矿型TiO2纳米粉体.采用热重/差热分析(TG-DTA)、X-射线衍射(XRD)、扫描电镜(SEM)、比表面积吸附(BET)和紫外-可见光谱(Uv-vIS)等分析方法对不同煅烧机制下所得粉体的物相、颗粒度、分散性和光吸收性能进行表征.同时利用纳米TiO2粉体对甲基橙进行了光催化降解,研究了其光催化性能.结果表明,炭黑的吸附阻止了纳米TiO2超细颗粒的团聚和烧结,制得的颗粒分散均匀、具有单一锐钛矿晶型结构的TiO2纳米粉体.经500℃煅烧获得的TiO2粉体粒径约为15 nm,比表面积为76.31 g/m2.在紫外灯照射下,由于炭黑的吸附和纳米TiO2的光催化形成协同效应,甲基橙的光催化降解率在6min达到99;.     

高比表面介孔碳的制备及其对溶菌酶的吸附研究

以间苯二酚-甲醛为碳源前驱体,正硅酸乙酯为硅源前驱体,嵌段聚合物F127(PEO106PPO70PEO106)为模板剂,在酸性条件下采用三组分共组装制备了具有介孔结构的碳硅复合材料.通过NaOH清洗去除硅元素可以得到具有更高面积和孔容的介孔碳.TEM和小角XRD结果表明,添加了正硅酸乙酯后所得介孔材料由有序结构变为无序蠕虫状.介孔碳材料的比表面积由389 m2/g增加到602 m2/g,孔容由0.45 cm3/g增加到0.58 cm3/g.所得介孔材料对溶菌酶的吸附量随着介孔材料比表面积和孔容的增加而增大.纯介孔碳的吸附行为符合Langmuir等温线吸附拟合,高比表面介孔碳的吸附过程符合Freundlich等温线吸附拟合.     

扩孔剂对SiO2气凝胶微观结构与性能的影响

以正硅酸乙酯为硅源,乙醇为溶剂,在溶胶-凝胶法和CO2超临界干燥的基础上,采用分别加入聚乙二醇(400)、六次甲基四胺和尿素作为扩孔剂的方法制备低密度SiO2气凝胶.利用扫描电镜(SEM)、傅里叶变换红外光谱仪(FT-IR)、孔径分布及比表面积测试仪(BET)、纳米压痕仪对未加扩孔剂和加入不同扩孔剂所制备的SiO2气凝胶的表面形貌、结构、比表面积、孔径分布、力学性能以及密度进行研究.结果发现:随着增加扩孔剂的加入量, SiO2气凝胶的密度明显降低;与未加扩孔剂的样品相比,加入扩孔剂所制备的SiO2气凝胶的比表面积和孔径增大;其中,六次甲基四胺具有较佳的扩孔效果,制备得到的SiO2气凝胶的性能较佳,孔径分布主要集中在15~55 nm,平均孔径为35.4 nm,比表面积高达1006 m2· g-1,孔体积为5.3 cm3· g-1,孔隙率高达96.2;.     

Ag掺杂Sm2O3/TiO2对甲基橙光降解性能的影响

采用光沉积法制备Ag掺杂的光催化剂Ag-Sm2 O3/TiO2,并对其在紫外光区对甲基橙的光降解行为进行了研究.采用XRD、FT-IR、N2吸附、SEM、TEM和XPS等手段对样品Ag-Sm2 O3/TiO2进行了表征,考察了Sm2 O3和Ag掺杂量对甲基橙紫外光降解活性的影响和催化剂Ag-Sm2 O3/TiO2的催化稳定性.结果表明,Sm2 O3/TiO2在紫外光照射下对甲基橙的光降解活性随着Sm2 O3的增大而减小;与样品Sm2 O3/TiO2相比,催化剂Ag-Sm2 O3/TiO2对甲基橙具有更好的紫外光降解活性,其催化活性随着Ag掺杂量的增加而减小.Ag和Sm2 O3掺杂量均为3.0wt;的催化剂Ag(3)-Sm2 O3(3)/TiO2对甲基橙紫外光降解的活性最高,在相同条件下的6次循环实验未出现明显失活.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Crystallization behaviours ofCo100−1(x+y)NbxBy amorphous alloys

The crystallization behaviours of Co_100?1(x+y)Nb_xB_y amorphous alloys were investigated by means of differential thermal analysis and a conventional X-ray diffractometer. The crystallization sequences are discussed in terms of the equilibrium phase diagram of the ternary alloy system.Assuming crystallization occurs as a result of nucleation and growth, the stabilizing effect of eutectic phase separation on the crystallization is shown by introducing the effective free energy of the critical nucleus.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

The Mott T−14 law from the rate equation formalism

The Mott $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ law for the dc hopping conductivity for amorphous semiconductors is derived from the rate equation formalism by using the methodology of Butcher and Hayden. This formula is then fitted to the experimental data for a-Si, a-Ge, partially compensated heavily doped n-type Ge and polymer PPIB at 640 atmospheric pressures. It is found that the “simplified Butcher formula” approximately fits the experimental data for a-Si and a-Ge. The values of the density of states at the Fermi level calculated from the expression for the prefactor of this formula are much more reasonable values than those obtained from the original Mott formula. The origin of this significant improvement is found to lie not in improved approximations but in the choice of the values of the characteristics frequency R₀.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.