恒磁场作用下压磁/压电半导体复合圆柱壳的耦合响应分析

本文针对由压磁材料和压电半导体材料组成的无限长复合圆柱壳结构,理论研究了其在径向恒磁场作用下结构内的多场耦合力学响应问题。为解析求解方便,文中分别采用单向耦合法和线性全耦合法,导出复合圆柱壳内位移场、电场、载流子等物理量的解析表达式。利用导出的解析表达式,数值分析了磁场大小和半导体层厚度比对结构内电势、电场和载流子的影响。计算结果表明：磁场和厚度比均可用来有效调控半导体层内的电学量,复合圆柱壳结构的厚度比有一个最优区间。     

层状压电半导体板的稳态弯曲振动分析

本文针对具有极化-变形-载流子耦合的层状压电半导体复合悬臂结构，理论研究了自由端在周期荷载作业下的稳态响应问题，导出了板中位移场、电场、载流子等物理量的解析表达式，并数值分析了周期荷载的幅值、激励频率和初始载流子浓度对结构宏观力学响应的影响。数值结果表明：在一阶固有频率下，结构内部各物理量响应幅值较大；在高阶固有频率下，各物理量响应出现多个局部峰值区域，其幅值相对减小，载流子会朝局部极值区域“聚集”或“离开”局部极值区域。初始载流子浓度在一定范围内对结构的固有频率以及各物理量的稳态响应有显著的调控作用。     

一维准晶功能梯度层合圆柱壳热电弹性精确解

两种或多种不同性质材料组成的层状结构可以满足工业发展的需求. 然而, 材料属性在接触面的突变问题, 容易导致层间界面处产生应力集中、裂纹以及分层等问题. 功能梯度材料利用连续变化的组分梯度来代替突变界面, 可以消除界面处的物理性能突变, 提高结构的粘结强度. 本文以一维准晶功能梯度层合圆柱壳为研究对象, 利用类Stroh公式和传递矩阵方法, 建立了材料参数沿径向呈现幂函数变化的层合圆柱壳模型, 获得了简支边界条件对应的一维准晶功能梯度层合圆柱壳的热电弹性精确解. 数值算例中讨论了层合圆柱壳内外表面承受温度载荷时, 功能梯度指数因子对温度场、电场、声子场和相位子场的影响, 尤其是对层合圆柱壳内外表面的影响. 结果表明, 指数因子改变了材料参数的空间分布情况, 进而对温度场、电场、声子场和相位子场都有影响; 增加功能梯度指数因子, 可减小温度载荷引起的内表面变形, 进而提升结构强度. 本文得到的结果可以为功能梯度准晶层合圆柱壳的设计和制造提供可靠的理论依据.      

EXACT THERMO-ELECTRO-ELASTIC SOLUTION OF FUNCTIONALLY GRADED MULTILAYERED ONE-DIMENSIONAL QUASICRYSTAL CYLINDRICAL SHELLS 1)

两种或多种不同性质材料组成的层状结构可以满足工业发展的需求. 然而, 材料属性在接触面的突变问题, 容易导致层间界面处产生应力集中、裂纹以及分层等问题. 功能梯度材料利用连续变化的组分梯度来代替突变界面, 可以消除界面处的物理性能突变, 提高结构的粘结强度. 本文以一维准晶功能梯度层合圆柱壳为研究对象, 利用类Stroh公式和传递矩阵方法, 建立了材料参数沿径向呈现幂函数变化的层合圆柱壳模型, 获得了简支边界条件对应的一维准晶功能梯度层合圆柱壳的热电弹性精确解. 数值算例中讨论了层合圆柱壳内外表面承受温度载荷时, 功能梯度指数因子对温度场、电场、声子场和相位子场的影响, 尤其是对层合圆柱壳内外表面的影响. 结果表明, 指数因子改变了材料参数的空间分布情况, 进而对温度场、电场、声子场和相位子场都有影响; 增加功能梯度指数因子, 可减小温度载荷引起的内表面变形, 进而提升结构强度. 本文得到的结果可以为功能梯度准晶层合圆柱壳的设计和制造提供可靠的理论依据.     

变厚度圆柱壳的强度优化设计

对在任意轴对称分布荷载作用下体积保持常数的变厚度圆柱壳的强度优化设计问题进行了研究。当中面形状固定时 ,采用阶梯折算法 ,用传递矩阵导出了变厚度圆柱壳的初参数解的显式表达式。根据Huber-Mises-Hencky强度准则 ,将变厚度圆柱壳的强度优化转化为极小化当量应力的非线性规划问题 ,并采用投影梯度法建立了问题的优化方法。文中对几个典型问题进行了计算。与等厚度圆柱壳相比较 ,优化圆柱壳的最大当量应力得到了显著降低。本文的研究方法和结果可以用于指导大型圆柱壳体的加肋设计     

层合结构压电器件的机电耦合响应

压电传感嚣和致动器都可以看成是由压电材料层和非压电(弹性)材料层交替铺设而成。对于这类任意铺设的层合板悬臂梁结构,推导出了表示力学变形与外加电场之间耦合效应的解析表达式。进而,又推导出了两类(一类为单层压电-弹性层。另一类为双层压电-弹性层)层合型悬臂梁结构机电耦合性能的解析公式。在该机电耦合模型中,包括了两个压电常数d211和d222。最后。通过比较解析解、实验值以及有限元计算结果,发现它们吻合得很好。     

一种特殊梯度分布的功能梯度圆柱壳的二维分析

功能梯度材料是一种新型材料,其结构分析已成为当今力学研究的热点。本文对一种特殊梯度分布的功能梯度材料圆柱壳进行了二维精确分析。从弹性力学平面应变问题的基本方程出发,引入应力函数,导出功能梯度材料圆柱壳受静载作用下的控制微分方程。假设材料的杨氏模量沿半径方向呈幂函数分布,泊松比为常数,利用分离变量法,导出了简支边界情况下功能梯度圆柱壳的精确解。通过算例分析了不同梯度变化时,功能梯度圆柱壳内的应力和位移变化规律。计算结果表明不同梯度分布的圆柱壳结构中的应力、位移沿厚度方向的变化规律是不同的,有时甚至差别很大。因此对于材料性质梯度变化的功能梯度材料圆柱壳,必须针对其自身特点,建立相应的理论分析模型。     

用双剪应力屈服准则求解轴对称圆柱壳的极限载荷

本文导出了轴对称圆柱壳大双剪应力屈服准则下的屈服表达式，并求出半无限圆柱壳在端部作用环向集中力下的极限载荷。     

层合圆柱厚壳热应力分析的状态方程及其半解析法

通过对Ｈｅｌｌｉｎｇｅｒ－Ｒｅｉｓｓｎｅｒ变分原理的修正，导出了变温作用下层合圆柱厚壳的状态方程及其半解析法，该方法在ｚ－θ曲面内采用通常的有限元离散，而沿壳厚（ｒ）方向采用状态空间法给出解析解答，且通过采用状态转移矩阵，建立了层合圆柱壳内外表面应力和位移之间的关系式，然后利用打靶法进行求解，从而大大降低了计算中的未知量数目。     

中厚夹层圆柱扁壳的屈曲分析

基于一阶剪切变形中厚圆柱壳理论,考虑夹心层的面内刚度,根据中厚夹层圆柱扁壳的几何方程、本构关系、平衡方程,建立了中厚夹层圆柱扁壳小挠度屈曲的微分方程;应用广义傅里叶级数解法,得到了四边简支条件下中厚夹层圆柱扁壳屈曲的临界荷载表达式。该表达式可以退化为硬夹心夹层板的表达式,表明本文推导过程的正确性。本文还讨论了夹心层的弹性模量和泊松比以及中厚夹心圆柱扁壳的长宽比和厚度对扁壳屈曲荷载的影响。结果表明:临界荷载与夹心层的弹性模量和泊松比成正比,与扁壳的长宽比和厚度成反比。     

初应力下压电半导体板中SH波的传播特性

针对无限大n-型压电半导体板,论文理论研究了其在初应力作用下水平剪切波的传播特性。基于压电半导体三维宏观理论和边界条件得到色散关系,结合数值算例,系统分析了边界条件、初始载流子浓度、板的厚度和初应力大小对SH波传播特性的影响。此外,讨论了初应力下两种不同材料中的SH波传播。研究显示：较小的初应力对相速度影响很小可忽略,当初应力达到一定值时波速急剧下降;类似地,初应力足够大时衰减才会逐渐加强。计算结果对压电半导体器件设计具有一定的理论指导意义。     

Nonlinear magneto-mechanical-thermo coupling characteristic analysis for transport behaviors of carriers in composite multiferroic piezoelectric semiconductor nanoplates with surface effect

In this paper, to better reveal the surface effect and the screening effect as well as the nonlinear multi-field coupling characteristic of the multifunctional piezoelectric semiconductor (PS) nanodevice, and to further improve its working performance, a magneto-mechanical-thermo coupling theoretical model is theoretically established for the extensional analysis of a three-layered magneto-electro-semiconductor coupling laminated nanoplate with the surface effect. Next, by using the current theoretical model, some numerical analyses and discussion about the surface effect, the corresponding critical thickness of the nanoplate, and the distributions of the physical fields (including the electron concentration perturbation, the electric potential, the electric field, the average electric displacement, the effective polarization charge density, and the total charge density) under different initial state electron concentrations, as well as their active manipulation via some external magnetic field, pre-stress, and temperature stimuli, are performed. Utilizing the nonlinear multi-field coupling effect induced by inevitable external stimuli in the device operating environment, this paper not only provides theoretical support for understanding the size-dependent tuning/controlling of carrier transport as well as its screening effect, but also assists the design of a series of multiferroic PS nanodevices.

     

多个局部温度载荷下压电半导体纤维杆的压电电子学行为分析

温度改变产生的极化电势可对压电半导体结构内的物理量进行有效调控, 这在穿戴电子器件及与温度相关的半导体电子器件中有重要工程应用价值. 本文针对在多个局部均匀温度变化作用下的压电半导体杆结构, 采用一维热压电半导体多场耦合方程, 基于线性化的漂移-扩散(drift-diffusion)电流模型导出了问题的解析解. 以两个局部温度载荷情况为例, 数值分析了局部温度改变对压电半导体内位移、电势、电位移、极化强度、载流子分布等物理场的影响. 对于温度改变较大的情况, 在COMSOL软件的PDE模块中, 采用非线性电流模型, 进行数值模拟. 研究结果表明: 由于两个局部区域的温度改变, 在半导体杆内形成了局部势垒和势阱, 不同的温度改变量和作用区域会产生不同高度/深度的势垒/势阱, 为基于压电半导体的热压电电子学器件结构设计提供了理论指导.      

ANALYSIS OF THE PIEZOTRONIC EFFECT OF A PIEZOELETRIC SEMICONDUCTOR FIBER UNDER MUTIPLE LOCAL TEMPERATURE LOADINGS 1)

温度改变产生的极化电势可对压电半导体结构内的物理量进行有效调控, 这在穿戴电子器件及与温度相关的半导体电子器件中有重要工程应用价值. 本文针对在多个局部均匀温度变化作用下的压电半导体杆结构, 采用一维热压电半导体多场耦合方程, 基于线性化的漂移-扩散(drift-diffusion)电流模型导出了问题的解析解. 以两个局部温度载荷情况为例, 数值分析了局部温度改变对压电半导体内位移、电势、电位移、极化强度、载流子分布等物理场的影响. 对于温度改变较大的情况, 在COMSOL软件的PDE模块中, 采用非线性电流模型, 进行数值模拟. 研究结果表明: 由于两个局部区域的温度改变, 在半导体杆内形成了局部势垒和势阱, 不同的温度改变量和作用区域会产生不同高度/深度的势垒/势阱, 为基于压电半导体的热压电电子学器件结构设计提供了理论指导.     

Interaction between bending and mobile charges in a piezoelectric semiconductor bimorph

We study the bending of a two-layer piezoelectric semiconductor plate (bimorph). The macroscopic theory of piezoelectric semiconductors is employed. A set of two-dimensional plate equations is derived from the three-dimensional equations. The plate equations exhibit direct couplings among bending, electric polarization along the plate thickness, and mobile charges. In the case of pure bending, a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges. In the bending of a rectangular plate under a distributed transverse mechanical load, it is shown that mobile charge distributions and potential barriers/wells develop in the plate. When the mechanical load is local and self-balanced, the induced carrier distributions and potential barriers/wells are also localized near the loading area. The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.     

Electrically forced shear horizontal vibration of a circular cylindrical elastic shell with a finite piezoelectric actuator

We analyze anti-plane vibrations of a circular cylindrical elastic shell electrically driven by a piezoelectric actuator. The equations of linear elasticity and linear piezoelectricity are used. The mathematical problem is solved using trigonometric series. Basic vibration characteristics including resonant frequencies, mode shapes and electric admittance are calculated.     

Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nano?ber

The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.     

A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints

A full-coupling model on the current-voltage(J-V) characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconductor(M/S) contacts. The depletion layer assumption proposed by the Shockley model is discarded. Gauss' law on the electric potential and the electric field is applied in the whole junction region such that the majority-carrier currents inside and outside the P/N barrier region are able to be exactly defined and clearly calculated. Then, the stable continuity equations of the electron and hole currents are established to show the current conversion between minority-and majority-carriers inside the whole PN junction region. By analyzing all the conversion procedure, the J-V characteristics of a PN junction are obtained with good agreement to the experimental results, which are closely dependent on the minority-carrier lifetime and doping concentrations. Obviously, the study on this topic possesses referential significance to mechanically tuning the performance of piezoelectric PN junctions and piezotronic devices.