Mechanisms of femtosecond laser ablation of dielectrics revealed by double pump–probe experiment

We study experimentally the electronic excitation mechanisms involved in the breakdown and ablation of wide band gap dielectrics. A femtosecond pump–probe interferometry technique, with 100 fs temporal resolution, allows measuring the modification of refractive index induced by ultra-short intense laser pulses. To get more information in the complex process of excitation and relaxation mechanisms involved during and after the interaction, we use a sequence of two excitation pulses: a first short pulse at 400 nm excites a controlled density of carriers, and a second one at 800 nm with variable pulse duration, from 50 fs to 10 ps, reaches an excited solid. In Al₂O₃, we show that the total density of carriers never exceeds the sum of the densities excited by the two pulses sent independently. This means that the second pulse deposits further energy in the material by heating the previously excited carriers, and that no electronic multiplication occurs. On the other hand, in SiO₂, it is possible, under specific conditions, to observe an increase of carrier density due to impact ionization. All these results demonstrate that the avalanche process, which is often invoked in the laser breakdown literature, does not play a dominant role in optical breakdown induced by short pulses.     

Compact and high-power broadband terahertz source based on femtosecond photonic crystal fiber amplifier

We present a review of the development of a compact and high-power broadband terahertz (THz) source optically excited by a femtosecond photonic crystal fiber (PCF) amplifier.The large mode area of the PCF and the stretcher-free configuration make the pump source compact and very efficient.Broadband THz pulses of 150 μW extending from 0.1 to 3.5 THz are generated from a 3-mm-thick GaP crystal through optical rectification of 12-W pump pulses with duration of 66 fs and a repetition rate of 52 MHz.A strong saturation effect is observed,which is attributed to pump pulse absorption;a Z-scan measurement shows that three-photon absorption dominates the nonlinear absorption when the crystal is pumped by femtosecond pulses at 1 040 nm.A further scale-up of the THz source power is expected to find important applications in THz nonlinear optics and nonlinear THz spectroscopy.     

DAST/SiO2 multilayer structure for efficient generation of 6 THz quasi-single-cycle electromagnetic pulses

We propose a DAST/SiO(2) multilayer structure for efficient generation of near-single-cycle THz transients with average frequency around 6 THz via collinear optical rectification of 800 nm femtosecond laser pulses. The use of such a composite material allows compensation for the phase mismatch that accompanies THz generation in bulk DAST crystals. The presented calculations indicate a strong increase in the THz generation efficiency in the DAST/SiO(2) structure in comparison to the case of bulk DAST crystal.     

N+GaAs subpicosecond photodetector irradiated by fast neutrons

We report experimental results of the characterization of an N⁺GaAs photodetector irradiated by fast neutrons with flux up to doses of 4×10¹⁷ n/cm² using a constructed electro-optic sampling system and illumination with 80-fs-wide laser pulses. The investigated N⁺GaAs sample was compared with the same non-irradiated sample. The device shows a response time of 680 fs full width at half maximum (648 GHz, 3-dB bandwidth) with a voltage amplitude of 3.1 mV. Changes in the shape of the electrical signal for different beam power excitations and bias voltages have been demonstrated. Using X-ray diffraction and diffuse scattering analyses, we have observed a decrease of the lattice constant and an almost three times decreased radius of nanoclusters; the density dislocations increased by over four times after neutron irradiation.     

Threshold effect in femtosecond laser induced nanograting formation in glass: influence of the pulse duration

Recently, femtosecond laser direct writing in porous glass is emerging as a powerful technique for building arbitrary 3D hollow micro/nanostructures in bulk glass materials. In this study, we investigate the pulse duration dependence of laser intensity window for inducing a single nanocrack inside porous glass by femtosecond laser direct writing. We find that the window for a single nanocrack increases with the pulse duration, while the roughness of side walls in the nanocracks becomes higher for pulses longer than ~300 fs. When the femtosecond laser pulses of an optimized duration of ~200 fs are chosen, a sufficiently broad range of laser intensity (~44 % of the structuring threshold) for creating a single nanocrack can be obtained, while smooth sidewalls required by nanofluidic applications can still be maintained. The reported results will be beneficial not only for the development of the 3D femtosecond laser micro/nanostructuring techniques, but also for gaining a deeper understanding of the physical mechanism behind the nanograting formation induced by femtosecond laser irradiation in glass and other transparent materials.     

Supercontinuum generation with femtosecond optical pulse compression in silicon photonic crystal fibers at 2500 nm

In this paper, femtosecond optical pulses compression and supercontinuum generation in a triangular silicon photonic crystal fiber at 2500 nm are investigated. A region of large minimum anomalous group velocity dispersion, negligible higher order dispersions and unique nonlinearity of silicon are used to demonstrate compression of 100 fs initial input optical pulses to 2.5 fs and ultra-broadband supercontinuum generation with very low input pulse energy over short distances of the fiber.     

Chirped pulse amplification in single mode Tm:fiber using a chirped Bragg grating

We report femtosecond pulse generation and chirped pulse amplification in Tm:fiber. A mode-locked oscillator operating in the soliton regime produced 800 fs pulses with 5 nm spectral bandwidth, at 40 pJ pulse energy. This oscillator seeded a pre-amplifier that utilizes a Raman soliton self-frequency shift to produce wavelength tunable pulses with 3 nJ energy, reduced pulse duration of 150 fs, and increased bandwidth of 30 nm. For further amplification, the pulses were stretched up to 160 ps using a chirped Bragg grating (CBG). Stretched pulses were amplified to 85 nJ after compression in single-mode Tm:fiber and recompressed with the CBG as short as 400 fs. Compressed pulses were coupled into a highly nonlinear tellurite fiber to investigate the potential of this ultrashort pulse 2-μm fiber source as a pump for mid-IR supercontinuum generation.     

Femtosecond hybrid mode-locked semiconductor laser and amplifier dynamics

We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode-locking techniques. Angle stripe geometry GaAs/AlGaAs semiconductor laser amplifiers are employed in an external cavity including prisms and a stagger-tuned quantum-well saturable absorber. An identical amplifier also serves as an optical power amplifier in a stretched pulse amplification and recompression sequence. After amplification and pulse compression this laser system produces 200 fs, 160 W peak power pulses. We discuss and extend our theory, and supporting phenomenological models, of picosecond and subpicosecond optical pulse amplification in semiconductor laser amplifiers which has been successful in calculating measured spectra and time-resolved dynamics in our amplifiers. We have refined the theory to include a phenomenological model of spectral hole-burning for finite intraband thermalization time. Our calculations are consistent with an intra-band time of approximately 60 fs. This theory of large signal subpicosecond pulse amplification will be an essential tool for understanding the mode-locking dynamics of semiconductor lasers and for analysis of high speed multiple wave-length optical signal processing and transmission devices and systems based on semiconductor laser amplifiers.     

Coherent single-cycle pulses with MV/cm field strengths from a relativistic transition radiation light source

Terahertz (THz) pulses with energies up to 100 μJ and corresponding electric fields up to 1 MV/cm were generated by coherent transition radiation from 500 MeV electron bunches at the free-electron laser Freie-Elektronen-Laser in Hamburg (FLASH). The pulses were characterized in the time domain by electro-optical sampling by a synchronized femtosecond laser with jitter of less than 100 fs. High THz field strengths and quality of synchronization with an optical laser will enable observation of nonlinear THz phenomena.     

基于LT-GaAs外延片的THz片上系统

太赫兹（THz）波在物质检测方面发挥着巨大的作用,是一种非常有潜力的生化传感工具。但是传统的太赫兹时域光谱系统（TDS）结构复杂,系统的集成度低,占用空间较大。所以,如何对THz波进行有效引导、实现集成化传输并得到高质量光谱就成为太赫兹光谱系统的研究热点。太赫兹片上系统是将THz的产生、传输以及探测都集成到同一芯片上,然后通过相干探测的方法获得THz时域光谱。它可以实现对多种样品的检测,尤其在对难于取样的微量样品探测方面具有广泛的应用价值。它无需光路准直,操作简便,成品率高。两个研究工作都是基于低温砷化镓(LT-GaAs)外延片开展的。首先将一根直径为200 μm的铜线固定在LT-GaAs外延片的上方,通过真空蒸镀的方法制备出天线电极,同时得到天线间隙,研制出基于LT-GaAs外延片的THz天线。利用波长为800 nm的飞秒激光对其进行测试,得到了质量较高的THz信号,验证了天线的实用性。然后在另一外延片上利用光刻微加工工艺制作出传输线和微电极,得到了集成的THz片上系统。使用波长为1 550 nm的飞秒激光分别激发片上系统的太赫兹产生天线和探测天线,天线产生的太赫兹波在传输线上传播,在探测端同样得到了质量较高的THz时域信号,证实了THz片上系统的可行性。该方法省去了腐蚀牺牲层以及LT-GaAs薄膜的转移、键合等步骤,极大地提高了片上系统的成品率,避免了薄膜转移过程中易破碎及腐蚀液存在毒性的问题。最后,研究了外加电压对从片上系统中获得的THz波性能的影响,结果为电压越高,THz波的信号强度越强;另外,通过在传输线上方垂直放置铜箔的方法验证了THz波沿着传输线传播的事实。该研究中采用的基于LT-GaAs外延片的片上系统的制备方法简单,制作周期短,制作过程安全,应用领域广泛,这为将来与微流控芯片相结合实现对液体样品的探测打下了基础。     

Ultrafast response of multi-energy proton-bombarded GaAs photoconductors

We have investigated the ultrafast optical and optoelectronic characteristics of multi-energy proton-bombarded GaAs (GaAs:H⁺) material and devices in some detail. Photo-excited carrier lifetimes of GaAs:H⁺ were observed to be as low as 350 ± 50 fs. Photoconductive switches (PCS) fabricated on GaAs:H⁺ were found to exhibit lower dark currents (15 nA at a bias of 10 V) and higher breakdown voltage (> 100 kV/cm) than PCS's fabricated on semi-insulating (S.I.) GaAs. The temporal response of the GaAs:H⁺ PCS was about 2 ps at full-wave half minimum. Optically excited terahertz (THz) radiation from GaAs:H⁺ was reported for the first time to our knowledge. The temporal response and spectral bandwidth of the emitted THz radiation were 0.7 ps and 1.25 THz, respectively. The field strength of the THz signal was about 20 mV/cm. From the THz data, we are able to deduce that the effective carrier mobility of GaAs:H⁺ was less than 1 cm²/V-sec.     

Effect of pulse duration on plasmonic enhanced ultrafast laser-induced bubble generation in water

Bubbles generated in water by focusing femtosecond and picosecond laser pulses in the presence of 100 nm gold nanoparticles have been investigated in the fluence range usually used for efficient cell transfection (100–200 mJ/cm²). Since resulting bubbles are at the nanoscale, direct observation using optical microscopy is not possible. An optical in-situ method has been developed to monitor the time-resolved variation in the extinction cross-section of an irradiated nanoparticle solution sample. This method is used to measure the bubbles lifetime and deduce their average diameter. We show that bubbles generated with femtosecond pulses (40–500 fs) last two times longer and are larger in average than those generated with picosecond pulses (0.5–5 ps). Controlling those bubble properties is necessary for optimizing off-resonance plasmonic enhanced ultrafast laser cell transfection.     

Generation of tunable octave-spanning mid-infrared pulses by filamentation in gas media

The continued development of femtosecond mid-infrared (IR) sources with ultrabroad spectral width is critical for probing and controlling complex molecular structural dynamics on an ultrafast timescale. We report on a sub-20 fs, coherent mid-IR source with an octave-spanning spectral bandwidth (>2000 cm(-1)) tunable from 2-8 micrometers (37.5-150 THz), with energy >0.4 μJ/pulse at 1 kHz. The mid-IR pulses are generated by four-wave mixing during the filamentation of intense 800 nm and 400 nm pulses in various gas media. Spectral tunability is achieved by the choice of gas, pressure and input 800 nm pulse energy.     

飞秒相干态相位差分光谱学

 理论上证明了测量脉冲对激发的相干态布居等价于测量单脉冲激发的感应极化,能同时获得瞬态相干光学过程的振幅与相位信息,发展了双通道飞秒脉冲对实验技术,提出了相位差分光谱实验方法。研究了半导体GaAs和稀土材料的飞秒相干态动力学过程,根据自相关曲线和样品信号的关系得到相位光谱。理论拟合得液氮温度下GaAs的激子退相时间为190fs;单晶Nd:YVO₄和粉末Nd:YAG 4f电子在室温下的退相时间为300fs。并研究了液氮温度下稀土材料原子核波包的动力学过程。     

Excess noise generation during spectral broadening in a microstructured fiber

We observe that nanojoule femtosecond pulses that are spectrally broadened in a microstructured fiber acquire excess noise. The excess noise is manifested as an increase in the noise floor of the rf spectrum of the photocurrent from a photodetector illuminated by the pulse train from the laser oscillator. Measurements are made of the intensity dependence of the excess noise for both 100 fs and sub-10 fs pulses. The excess noise is very strong for 100 fs pulses, but barely measurable for sub-10 fs pulses. A rigorous quantum treatment of the nonlinear propagation of ultrashort pulses predicts that, for a fixed generated bandwidth, the amount of excess noise decreases with pulse duration, in agreement with the experimental results.     

Photoexcited GaAs surfaces studied by transient terahertz time-domain spectroscopy

The transmission characteristics of an air-GaAs interface and the transient absorption and index spectra of the thin, photoexcited surface layer are investigated subsequent to excitation by a femtosecond laser pulse. We find that the total phase change and transmission of a terahertz (THz) probe pulse are dominated by interface effects. This observation has important implications in the interpretation of THz time-domain spectroscopy data of absorbing media. We also observe that the THz pulse apparently arrives at the detector as much as 60 fs earlier when it is transmitted through an optically excited GaAs wafer. This effect is fully explained in terms of a frequency-dependent transmission and phase shift at the air-GaAs interface and is not associated with superluminal propagation.     

Generation of sub-mJ terahertz pulses by optical rectification

Recent theoretical calculations predicted an order-of-magnitude increase in the efficiency of terahertz pulse generation by optical rectification in lithium niobate when 500 fs long pump pulses are used, rather than the commonly used ~100 fs pulses. Even by using longer than optimal pump pulses of 1.3 ps duration, 2.5× higher THz pulse energy (125 μJ) was measured with 2.5× higher pump-to-THz energy conversion efficiency (0.25%) than reported previously with shorter pulses. These results verify the advantage of longer pump pulses and support the expectation that mJ-level THz pulses will be available by cooling the crystal and using large pumped area.     

Ultrafast dynamics of o-fluorophenol studied with femtosecond time-resolved photoelectron and photoion spectroscopy

The ultrafast dynamics of o-fluorophenol via the excited states has been studied by femtosecond time-resolved photoelectron imaging. The photoion and photoelectron spectra taken with a time delay between 267 nm pump laser and 800 nm probe laser provide a longer-lived S1 electronic state of about ns timescale. In comparison,the spectra obtained by exciting the S2 state with femtosecond laser pulses at 400 nm and ionizing with pulses at 800 nm suggest that the S2 state has an ultrashort lifetime about 102 fs and reflects the internal conversion dynamics of the S2 state to the S1 state.     

On-chip pulsed terahertz systems and their applications

The generation and detection of guided wave terahertz (THz) transients in microstrip transmission line systems is demonstrated at both room and cryogenic (∼ 4 K) temperatures using thin film low-temperature-grown GaAs (LT-GaAs) switches, excited by a 100 fs, 80 MHz repetition rate pulsed Ti:Sapphire laser. The characterisation of passive filter elements formed in the microstrip line is reported, together with their response to the application of dielectric loads of varying thickness at room temperature.     

GaAs中的飞秒自由感应衰减

用双光束诱导半导体ＧａＡｓ的激子相干态,记录液氮温度样品的光电导信号随双脉冲之间延时的变化。实验与理论分析结果表明：对于均匀增宽的二能级体系,这种中以直接反映相干态的自由感应衰减。求解均匀增宽二能级体系,这种测量方法可以直接反映相干态的自由感应衰减。求解均匀增宽二能级体系的密度矩阵方程,拟合实验结果得到载流子相干态的退相时间Ｔ２＝１１５ｆｓ。