激光驱动飞片冲击引爆炸药的计算

 在Gurney方程和考虑金属相变状态方程的基础上， 提出了一种激光驱动飞片运动的计算模型。这种模型能确定与炸药临界起爆相关的参数，诸如沉积的激光能量、烧蚀层和飞片的厚度以及飞片飞行的距离等等。计算的结果与实验相符。在本模型中可以对电离、烧蚀及二维效应作进一步的考虑。     

CuO/Al2O3、CuO/CeO2-Al2O3和CuO/La2O3-Al2O3催化剂中CuO物种被CO氧化的比较

用浸渍法制备了CuO/Al2O3 (Cu/Al)、CuO/CeO2- Al2O3 (Cu/CeAl)和CuO/La2O3-Al2O3(Cu/LaAl)催化剂. 通过原位XRD、Raman和H2-TPR方法， 对催化剂中的CuO物种以及CuO-Al2O3的固-固相反应进行了表征. 结果表明，对于Cu/Al催化剂，CuAl2O4存在于CuO与Al2O3层之间，CuO以高分散和晶相两种相态存在于催化剂的表层；对于Cu/CeAl催化剂，除了少量高分散和晶相的CuO存在于表层外，大部分CuO迁移到了CeO2的内层，     

透射式激光烧蚀含能聚合物的羽流实验

搭建了透射式羽流观测平台,研究了不同烧蚀层厚度的聚叠氮缩水甘油醚/硝化棉(GAP/NC)的共混聚合物薄膜透射式激光烧蚀羽流特性.实验结果表明:透射式烧蚀首先在未受基底层约束的一侧形成突起,突起不断膨胀最终破裂;羽流中大颗粒物质速度不同,主要分为两部分,位于烧蚀层不同位置.随着烧蚀层厚度的减小,纵向激波和物质颗粒的速度增大,物质颗粒尺寸减小,表明随着烧蚀层厚度的减小比冲增大.     

TiO2/Al2O3薄膜的原子层沉积和光学性能分析

采用原子层沉积技术在熔石英和BK7玻璃基片上镀制了TiO2/Al2O3薄膜,沉积温度分别为110℃和280℃。利用X射线粉末衍射仪对膜层微观结构进行了分析研究,并在激光损伤平台上进行了抗激光损伤阈值测量。采用Nomarski微分干涉差显微镜和原子力显微镜对激光损伤后的形貌进行了观察分析。结果表明,采用原子层沉积技术镀制的TiO2/Al2O3增透膜的厚度均匀性较好,Φ50 mm样品的膜层厚度均匀性优于99%;光谱增透效果显著,在1 064 nm处的透过率〉99.8%;在熔石英和BK7基片上,TiO2/Al2O3薄膜在110℃时的激光损伤阈值分别为（6.73±0.47）J/cm2和（6.5±0.46）J/cm2,明显高于在280℃时的损伤阈值。     

激光驱动飞片过程中激光烧蚀深度的计算

利用激光体烧蚀模型,数值模拟了激光驱动飞片的加速过程,包括激光的吸收和飞片的速度历史等。在光强为GW/cm2量级的激光作用下,激光烧蚀产生的等离子体的流体力学运动可用改编的1维La-grange流体力学计算程序SSS来描述。通过计算得到不同激光能量下的飞片密度剖面,由此给出金属薄膜的烧蚀深度与实验测量值进行比对,二者符合得较好。     

光纤传输激光驱动飞片实验研究

构建了一种基于光纤传输高功率激光的飞片发射系统,并测试了飞片速度.飞片膜层为三明治结构:铝烧蚀层、氧化铝隔离层和铝飞片产生层.飞片膜层采用磁控溅射技术沉积在玻璃衬底上,总厚度为5.5 μm.激光辐照铝膜层产生高温高压等离子体,驱动剩余膜层产生高速飞片,速度达数km/s.同时,实验研究了光纤传能系统的输出激光空间分布特性和传输激光能量容量,它们决定了飞片的平面性和最大速度.光纤端面损伤是限制光纤传输激光能量容量的关键因素,光纤端面通过精密机械抛光和激光预处理可以获得理想的抗激光损伤能力.采用基于光纤阵列探针的时间序列测试技术获得了飞片的平均速度,并评估了飞片的平面性.采用搭建的基于光纤传输高功率激光的飞片发射系统获得了速度达1.7 km/s、直径接近1 mm的高速飞片. 关键词： 激光驱动飞片 激光辐照 光纤阵列探针 激光等离子体     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜. 研究了SrBi2Ta2O9/Bi4Ti3O12复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi4Ti3O12薄膜易于沿c轴择优生长,并有利于SrBi2Ta2O9/Bi4Ti3O12复合薄膜的生长.合理的SrBi2Ta2O9/Bi4Ti3O12厚度配比能获得较好的铁电性能和优良的抗疲劳特性,SrBi2Ta2O9/Bi4Ti3O12厚度配比为1∶3的复合薄膜的剩余极化强度和矫顽电场分别为8.1 μC/cm2 和 130 kV/cm,其无疲劳极化开关次数达1011以上.     

激光作用复合膜体驱动飞片的理论计算和实验研究

采用Gurney理论,建立了激光作用复合膜体驱动飞片的理论计算模型。通过修正膜体材料的激光能量吸收系数,对激光作用复合膜体结构形成的飞片速度进行计算,分析了膜体材料和结构组成对飞片速度的影响,确定了形成高速飞片的复合膜体结构。进行了强激光作用复合膜体驱动飞片实验,采用压电薄膜测量了飞片到达不同距离的时间,计算得到飞片的速度和加速度。结果表明:不同激光能量作用下复合膜体飞片的加速特征基本相似,激光能量的变化对飞片加速时间的影响较小,飞片速度随着光爆层厚度的增加呈先增大后减小的趋势;对应于不同的激光能量,光爆层存在最优能量吸收厚度。     

纳秒激光冲击加载的全过程诊断

 与传统的冲击加载方式相比,激光驱动试样具有微尺寸（直径小于1 mm,厚度约10 μm）、超短作用过程（纳秒量级）等特点,但其速度变化历史的实时诊断颇为困难,因此发展适用于激光驱动的高时空分辨率的实时测试技术是十分重要和有价值的。采用桌面式脉冲Nd:YAG激光器作为加载平台,发展了激光加载下的小焦点多普勒光纤探针测量系统（焦斑直径约200 μm,时间分辨力约50 ps）,成功实现了从激光脉冲驱动微尺寸飞片飞行直至撞击Z-切石英试样的全过程实时诊断。实验结果显示,将6 μm 厚Al箔飞片驱动至2.48 km/s时,撞击Z-切石英试样的粒子速度为1.27 km/s,与Hugoniot理论计算结果相符,表明该测试技术是可靠、有效的;多层薄膜靶结构设计（基底/烧蚀层/硅油/Al箔）可提升激光与靶物质的能量耦合效率,使飞片保持更好的宏观完整性。为开展超短脉冲激光加载下材料动态特性研究提供了一种有效的技术途径。     

利用电子束蒸发制备铝隧道结工艺研究

采用电子束蒸发的方法在Si片上制备超导铝(Al)薄膜。利用X射线衍射和直流四电极电阻法分别测试了厚度从100埃到5000埃的Al薄膜物向组成,超导转变温度(Tc)和临界电流密度(Jc)。当Al薄膜厚度大于500埃时,超导转变温度Tc=1.2K。电子束蒸发制备的Al薄膜性能良好,具有较高的结晶质量,为制备Al超导隧道结奠定了良好基础。对小面积的Al超导隧道结工艺进行了研究,该超导隧道结两层的超导体材料为Al薄膜,中间势垒层材料为Al2O3。其中Al薄膜利用电子束蒸发制备,势垒层通过直接氧化Al薄膜表面实现,该工艺和采用直接蒸发氧化物薄膜工艺相比不仅简单而且能有效防止势垒层不连续造成的弱连接。     

Microstructure and transport properties of YBa2Cu3O7−δ films produced by laser ablation from a BaF2/Y2O3/CuO target

The effects of varying the temperature and duration of the post-deposition anneal in watersaturated oxygen were investigated for YBa₂Cu₃O_7−δ films of varying thickness. The films were produced by laser ablation from pressed powder targets consisting of BaF₂,Y₂O₃, and CuO mixtures. This technique produces superconducting films with a highly textured surface. The films were fabricated on SrTiO₃ substrates and were analyzed with X-ray diffraction, scanning electron microscopy, and temperature dependent resistivity. Critical current density (J_c) measurements were performed in magnetic fields up to 1 T. For film thickness on the order of 900 nm, completely c-axis oriented films were obtained with a 60 min anneal at 850°C. Thinner films required less annealing, either shorter times or lower temperatures, to achieve similar results, indicating that the optimal annealing conditions are dependent on film thickness.     

Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes.     

Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.     

Fe/Al混合膜的PLD法制备及表面分析

 采用脉冲激光气相沉积（PLD）技术制备了Fe/Al混合膜，测量了该混合膜的光电子能谱（XPS），并采用原子力显微镜（AFM）、扫描电子显微镜（SEM）对Fe/Al混合膜作了表面分析。结果表明：Fe/Al混合膜的表面粗糙度对衬底温度有明显的依赖性， 随着衬底温度的升高，薄膜的表面逐渐变得平滑，膜层变得致密，在200 ℃衬底温度下制得了均方根（rms）粗糙度为0.154 nm、具有原子尺度光滑性的Fe/Al混合膜， 膜中Fe和Al分布比较均匀，其成分比约为1∶3，同时XPS分析也表明Fe/Al混合膜暴露在空气中后表面形成了Al₂O₃和FeO氧化层。     

Effect of Alumina and Chromium Interlayers on Microstructures and Optical Properties of Thin Ag Films on Glass Substrates

Effects of alumina and chromium interlayers on the microstructure and optical properties of thin Ag films are investigated by using spectrophotometry, x-ray diffraction and AFM. The characteristics of Ag films in Ag/glass, Ag/l2O3/glass and Ag/Cr/glass stacks are analysed. The results indicate that the insertion of an Al2O3 or Cr layer decreases the grains and influences the reflectance of Ag films. The reflectance of the Ag film can be increased by controlling the thickness of alumina interlayer. The stability of Ag films is improved and the adhesion of Ag films on glass substrates is enhanced by alumina as an interlayer.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

微型平面复合薄膜电爆炸开关的设计和研究

开关技术是影响爆炸箔起爆系统可靠作用、微型化、低能化、集成化的关键技术。电爆炸平面开关是利用强脉冲电流使触发极金属桥箔发生电爆炸,产生高温高压等离子体,使爆炸桥区两侧的电极导通。基于微加工技术,采用Al/CuO复合薄膜材料作为触发电极,设计制造了微型平面复合薄膜电爆炸开关。采用扫描电子显微镜、差示扫描量热法和光谱谱线测温研究了触发极Al/CuO复合薄膜的形貌、反应性和电爆炸等离子体温度,通过放电电流测试研究了开关性能。结果表明,在主回路电压2000 V时,开关输出电流峰值约为1938 A,上升时间390 ns,性能优于仅以铜薄膜为触发电极的电爆炸平面开关。     

Chemically deposited copper oxide thin films: structural, optical and electrical characteristics

Thin films of copper oxide with thickness ranging from 0.05–0.45 μm were deposited on microscope glass slides by successively dipping them for 20 s each in a solution of 1 M NaOH and then in a solution of copper complex. Temperature of the NaOH solution was varied from 50–90°C, while that of the copper solution was maintained at room temperature. X-ray diffraction patterns showed that the films, as prepared, are of cuprite structure with composition Cu₂O. Annealing the films in air at 350°C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.1 eV (direct) to 1.75 eV (direct). The films show p-type conductivity, 5×10⁻⁴ Ω⁻¹ cm⁻¹ for a film of thickness 0.15 μm. Electrical conductivity of this film increases by a factor of 3 when illuminated with 1 kW m⁻² tungsten halogen radiation. Annealing in a nitrogen atmosphere at temperatures up to 400°C does not change the composition of the films. However, the conductivity in the dark as well as the photoconductivity of the film increases by an order of magnitude. The electrical conductivity of the CuO thin films produced by air annealing at 400°C, is high, 7×10⁻³ Ω⁻¹ cm⁻¹. These films are also photoconductive.