超热电子与金黑腔靶作用产生硬X射线的蒙特卡罗模拟

激光打靶产生大量麦氏分布的超热电子,与金腔靶相互作用产生硬X射线.利用蒙特卡罗方法,对超热电子在金腔靶中的传输进行了研究,模拟了在不同超热电子温度、份额下硬X射线谱的变化及在不同腔体尺寸、腔壁厚度情况下,硬X射线谱的变化情况,给出硬X射线产生效率的决定因素.利用硬X射线谱反推得到的超热电子信息与蒙特卡罗程序模拟结果相结合的方法,获得金腔内部超热电子初始信息. 关键词： 热电子 超热电子 蒙特卡罗方法 硬X射线     

腔靶内超热电子的实验研究

介绍了利用１０道滤波荧光谱仪（简称Ｆ．Ｆ．谱仪）测量新型腔靶中超热电子产生的硬Ｘ光能谱，并结合ＧａＡｓ阵列探测器测量硬Ｘ光角分布，给出了腔外硬Ｘ光总能量，同时用Ｆ．Ｆ．谱仪测量结果与其同方位的ＧａＡｓ探测器测量结果比对，两者在误差范围内是一致的。在Ｆ．Ｆ谱仪和ＧａＡｓ探测器两者数据比较自洽的情况下，并与后向受激拉曼散射光特征量比较，得出了：（１）腔靶内超热电子不是各向同性均匀分布的，大部分超热电子沿着入射激光光轴方向运动；（２）腔内大部分超热电子与冷介质（腔壁）发生库仑作用产生硬Ｘ光。     

腔靶内爆区超热电子实验研究

利用１０道滤波荧光谱仪（ＦＦＳ）研究了强激光和薄壁腔靶相互作用时超热电子产生的特征，结合ＧａＡｓ硬Ｘ射线角分布探头，受激喇曼莠射光探头，针孔相机的测量结果，分析得出：在内爆腔靶中，超热电子产生的源区，大部分超热电子静电场和转换体约束在源区，只有小部分能量较高的超热电子进入到内爆区，内爆靶区超热电子总能量占超热电子总能量的约２０％，占入射激光能量的１％－３％。     

1．053μm激光在腔靶中反常吸收和超热电子的研究

从１９９０年到１９９３年，在神光Ⅰ上我们利用多种能量卡计和谱仪，全面系统地研究了基频光在腔靶中产生的反常吸收和超热电子。实验获得了腔靶反常吸收光谱、能量和硬Ｘ光谱，给出了ＳＲＳ能谱和能量、超热电子能量和温度与激光参数和靶型的关系，证明了采用短波长激光。     

“神光Ⅱ”基频光黑腔靶实验超热电子诊断

介绍“神光Ⅱ”首次进行大能量基频光黑腔靶实验超热电子实验观测,采用十道滤波荧光谱仪(FFS)测量腔靶发射15—250keV硬x射线谱,由高能x射线谱通量推断超热电子占入射激光能量份额ηhe为13%—16%,由谱的斜率推断超热电子温度Th为35—45keV,由超热电子能量和受激拉曼散射光(SRS)能量的关联,推断超热电子产生的机理,并给出了不同腔靶在不同激光能量EL下超热电子产生的特征 关键词： 1.053μm激光 超热电子 黑腔靶 大能量激光     

HL－1装置放电中限制器上的硬X射线发射

观察了在ＨＬ－１装置放电电流上升段、坪区和下降部分由逃逸电子引起的硬Ｘ射线发射模式；硬Ｘ射线发射与破裂、ｍ＝２，３扰动、环电压尖峰、ＩＯＣ放电和超热电子辐射等的关系。给出了３００－３０８ｍｓ间硬Ｘ射线的闪烁脉冲幅度谱，最大能量为６．６ＭｅＶ．     

短波长激光超热电子产生与抑制机理的研究

介绍了在“神光Ⅰ”和“星光Ⅱ”上分别进行的二倍频、三倍频激光照射金盘靶、腔靶、碳氢有机膜平面靶的实验.通过测量硬X射线谱推断超热电子特性,结合受激Raman散射光和双等离子体衰变产生的(3/2)ω0谐波的观测,分析各种靶超热电子产生和抑制的机理,并探讨了抑制超热电子的有效途径. 关键词：     

HL—1装置放电中限制器上的硬X射线发射

观察了在ＨＬ－１装置放电电流上升段、坪区和下降部分由逃逸电子引起的硬Ｘ射线发射模式；硬Ｘ射线发射与破裂、ｍ＝２，３扰动、环电压尖峰、ＩＯＣ放电和超热电子辐射等的关系。给出了３００－３０８ｍｓ间硬Ｘ射线的闪烁脉冲幅度谱，最大能量为６．６ＭｅＶ。     

0．53μm激光产生的超热电子的实验观测

介绍了在“神光”Ｉ号装置上利用波长０．５３ｐμｍ、脉宽τ约７５０ｐｓ、能量６０～２３０Ｊ激光（靶面激光强度１×１０￣（１３）～５×１０￣（１５）Ｗ／ｃｍ￣２）照射Ａｕ盘靶和Ａｕ拄黑腔靶产生超热电子的实验观测结果与分析。实验测量１０ｋｅＶ以上硬Ｘ光谱和通量表明：采用倍频激光可以使超热电子能量明显比基频光小一个量级左右，超热电子温度Ｔ＿ｈ、热电子温度Ｔ＿ｅ均降低一半左右，受激Ｒａｍａｎ散射光能量Ｅ＿（ＳＲＳ）减少二个多量级。在我们的实验条件下，Ａｕ盘靶（等离子体定标尺度Ｌ≤１００μｍ）产生超热电子的主要机制可能是双等离子体衰变和共振吸收，此外还有受激Ｒａｍａｎ散射（ｎ≈ｎ＿ｃ／４），１００μｍ＜Ｌ≤２４０μｍ超热电子产生的主要机制是ＴＰＤ，此外还有ＳＲＳ（ｎ≈ｎ＿ｃ／４）；黑腔靶（Ｌ≥３００μｍ）超热电子产生的主要机制是ＳＲＳ（ｎ＜ｎ＿ｃ／４）。     

系列柱形薄壁腔靶制备工艺研究

为了从实验上深入研究超热电子产生规律，从而减少或抑制超热电子对惯性约束聚变（ＩＣＦ）的危害，我们制备了一系列薄壁腔靶，以供实验研究。本文详细地描述了柱形薄壁腔靶的制备工艺。利用ＮＧ－１０４型精密单向纵切车床，采用金刚石刀具车削，提高心轴质量，表表粗糙度可达０．１μｍ。采用电镀和磁控溅射二种方法镀膜，为了使腔靶壁厚均匀，在镀膜时，必须使心轴匀速旋转。利用磁控溅射在腔靶外表面再涂上１μｍ左右厚的二氧化硅，以提高超薄壁腔靶的强度和自立能力。在腐蚀心轴时，必须仔细控制酸的浓度，防止在腐蚀时因产生气泡太多，太快而使腔靶破裂。用Ｘ射线照相法和扫描电子显微镜测量腔靶的几何参数。制备系列柱形薄壁腔靶达到指标为：壁厚范围２～３０μｍ，壁厚均匀性小于１０％，表面粗糙度０．２～０．３μｍ。最后介绍了在“神光Ⅰ”上打靶结果。结果表明，实验值与理论值符合较好。     

Fluid Model of a Sheath Formed in Front of an Electron Emitting Electrode Immersed in a Plasma with Two Electron Temperatures

The formation of a sheath in front of a negatively biased electrode (collector) that emits electrons is studied by a one‐dimensional fluid model. Electron and ion emission coefficients are introduced in the model. It is assumed that the electrode is immersed in a plasma that contains energetic electrons. The electron velocity distribution function is assumed to be a sum of two Maxwellian distributions with two different temperatures, while the ions and the emitted electrons are assumed to be monoenergetic. The condition for zero electric field at the collector is derived. Using this equation the dependence of electron and ion critical emission coefficients on various parameters ‐ like the ratio between the hot and cool electron density, the ratio between hot and cool electron temperature and the initial velocity of secondary electrons ‐ is calculated for a floating collector. A modification of the Bohm criterion due to the presence of hot and emitted electrons is also given. The transition between space charge limited and temperature limited electron emission for a current‐carrying collector is also analyzed. The critical potential, where this transition occurs, is calculated as a function of several parameters like the Richardson emission current, the ratio between the hot and cool electron density, the ratio between hot and cool electron temperature and the initial velocity of secondary electrons. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Critical concentration of hot carriers in a quasi-two-dimensional semiconductor

The critical concentration of hot carriers necessary to maintain a Maxwellian for the isotropic part of the distribution function is calculated in an asymptotic approximation. The results are applied to electrons in an inversion layer at the surface of silicon.     

飞秒激光-金属薄膜靶相互作用中靶前后超热电子能谱的比较

采用电子谱仪测量了飞秒激光-金属薄膜靶相互作用中靶前和靶后产生的超热电子能谱.结果显示：靶前超热电子能谱的峰出现在约430 keV处，靶后超热电子能谱的峰出现在约175 keV处；靶前超热电子的有效温度分别为218 keV和425 keV，靶后超热电子能谱出现“软化”现象，其有效温度分别为96 keV和347 keV.靶前和靶后超热电子能谱明显不同是由于超热电子输运穿越过密等离子体和冷材料的靶，并在靶后建立Debye鞘，鞘电场使靶后超热电子能谱峰向低能端移动，鞘电场和自生磁场导致靶后超热电子能谱产生“软化”，估算出的鞘电场小于激光电场.     

Effects of Energetic Electrons on Collector and Source Potentials in a Finite Ion Temperature Plasma

Formation of the potential in a two-electron-temperature plasma region facing a floating collector was studied theoretically with a kinetic plasma-sheath model and by electrostatic particle simulation. The electrons were described by truncated full Maxwellian velocity distribution functions and the ions by an accelerated half-Maxwellian velocity distribution function. The collector potential and the plasma source sheath or presheath potential drop were evaluated as functions of the hot to cool electron temperature ratio and the hot electron density ratio using Vlasov and Poison equations. The results showed that the presheath potential drop varied continuously with electron composition ratio for lower values of the electron temperature ratio, while for higher values in a narrow composition ratio range, triple values of the potential were found. Of the two physically acceptable values, the lower was characterized by the cool electrons and the higher by the hot electrons. It is anticipated that a current-free double layer structure is formed in the plasma system between these two potential regions. The collector floating potential, as a function of electron composition ratio, is mainly dominated by the hot electrons, since already a small value of hot electron current is sufficient to compensate the ion saturation current. In order to complete the theoretical investigation we also study the hydrogen plasma system with the XPDP1 particule-in-cell simulation code composed at Berkeley. At certain plasma parameter values formation of a double layer structure was observed. The potential Values on the upper and lower side of the double layer, as well as that of the collector floating potential, corresponded very well to the calculated values. On the upper side the plasma was composed of ions, accelerated through the source sheath potential drop, and electrons consisting of cool full Maxwellian and hot truncated full Maxwellian populations. On the lower side only hot electrons and ions additionally accelerated through the double layer were found.     

Tonks-Langmuir problem for a bi-Maxwellian plasma

An analytical solution of the Tonks-Langmuir (TL) problem with a bi-Maxwellian electron energy distribution function (EEDF) is obtained for a plasma slab. The solution shows that the ambipolar potential, the plasma density distribution, and the ion flux to the wall are mainly governed by the cold electrons, while the ionization rate and voltage drop across the wall sheath are governed by the hot electrons. The ionization rate by direct electron impact is found to be spatially rather uniform, contrary to the T-L solution where it is proportional to the plasma density distribution. The temperature of hot electrons defined by the ionization balance is found to be close to that of the T-L solution for a mono-Maxwellian EEDF, and is in reasonable agreement with experiments carried out in a low pressure capacitance RF discharge. The energy balance for cold electrons in this discharge shows that their heating by hot electrons via Coulomb interaction is equalized by the cold electrons' escape to the RF electrodes during collapse of the RF sheath     

超短超强激光与固体靶相互作用中超热电子的角分布

 用3TW超短超强激光器进行了激光与固体靶相互作用实验。采用电子角分布仪和LiF热释光探测器探测了超热电子的角分布。测量结果显示：能量较高的电子发射的定向性好于能量较低的电子；能量较低的电子呈溅射状发射；能量较高的电子发射出现两个尖锐的发射峰，其中，激光反射方向的超热电子发射峰则由反射激光、有质动力径向分量、侧向拉曼散射等加速机制共同作用的结果，靠近靶法线方向的超热电子发射峰是由其振吸收机制产生，且理论预言与实验结果相吻合。     

激光功率密度对Al膜靶后表面快电子发射的影响

 报道了在20 TW皮秒激光器上完成的p偏振激光与等离子体相互作用过程中产生的快电子的角分布和能谱测量结果。实验得到：当激光功率密度小于10¹⁷ W/cm²时,电子发射没有明显定向性,在激光入射面内多峰发射;当激光功率密度大于10¹⁷ W/cm2,小于10¹⁸ W/cm²时,电子主要沿靶面法线方向发射;当激光功率密度达到相对论强度时,电子主要沿激光传播方向发射;激光功率密度未达到相对论强度时,靶后表面法线方向快电子能谱拟合平均温度符合共振吸收温度定标率;激光功率密度达相对论强度以上时,靶后表面法线方向快电子能谱拟合平均温度高于已有的温度定标率。     

Inter- and intra-subband relaxation of hot electrons in GaAs/AlGaAs quantum wells

In this work, we have studied the inter- and intra-subband scattering of hot electrons in quantum wells using the hot electron-neutral acceptor luminescence technique. We have observed direct evidence of the emission of confined optical phonons by hot electrons excited slightly above the n=2 subband in GaAs/Al_0.37Ga_0.63As quantum wells. Scattering rates of photoexcited electrons via inter- and intra-subband LO phonon emission were calculated based on the dielectric continuum model. We found that, for wide wells with the Al composition of our experiments, both the calculated and experimental results suggest that the scattering of the electrons is dominated by the confined LO phonon mode. In the calculations, scatterings among higher subbands are also dominated by the same type of phonon at well width of 10 nm.