Electronic molecule-like spectrum of quantum wells in crossed fields

We show that an electron confined to a single finite parabolic quantum well in crossed electric and magnetic fields can behave as a double quantum well system. The magnetic field is parallel to the heterostructure layers and the electric field is perpendicular to those. For a suitable choice of both fields and quantum well width, the electron can be confined to a double quantum well effective potential that is very similar to the electronic potential model for diatomic molecules. The double quantum well spectrum is calculated using a numerical algorithm based on semiclassical methods. A physical interpretation of this quantum system is given based on the analogy to the electrons bound to diatomic molecules.     

Effects of intersubband interaction on multisubband electron transport in single and double quantum wells

The multisubband electron transport properties are studied for doped single quantum well and gated double asymmetric quantum well structures. The effects due to intersubband interaction and screening of the ionized impurity scattering are also investigated. We show that intersubband coupling plays an essential role in describing the screening properties as well as the effect of ionized impurity scattering on the mobility in a doped single quantum well. For coupled double quantum well structures, negative transconductance is found theoretically which is due to resonant tunneling between the two quantum wells.     

Self-consistent calculations of coherent tunneling oscillations in asymmetric double quantum wells

Coherent carrier tunneling in asymmetric double quantum well heterostructures is analytically investigated through a self-consistent method of calculation. Longitudinal electric fields are applied to reach the interwell resonance conditions. Exact wave functions in asymmetric double quantum well systems (modified Airy functions) are used to include the electron-hole interaction in the coherent tunneling process. Results are in good agreement with the available previous works.     

Donor states in tunnel-coupled quantum wells

We study the energy spectrum of the impurity states in tunnel-coupled double quantum wells for Coulomb and short-range donor potentials. We calculate the impurity contribution and the density of states and detect the transformation of a localized donor state into a resonant state when the binding energy of the donor in an isolated quantum well is less than the separation of the energy levels of the double quantum wells. In the opposite case, where the binding energy is greater than the level separation, there is tunneling repulsion between adjacent impurity levels, with the degree of degeneracy of the levels changing when there is tunneling mixing of the ground and excited impurity states from different wells. Resonant states emerge in an asymmetric double quantum well, while in a symmetric double quantum well the impurity level at the barrier’s center proves to be localized even against the background of the continuum. The calculations are based on a general expression for the impurity contribution to the density of states in terms of a 2-by-2 matrix Green’s function, i.e., only a pair of tunnel-coupled levels of the double quantum wells is taken into account. For an impurity with a short-range potential, we derive a matrix generalization of the Koster-Slater solution, while the impurity with a Coulomb potential is analyzed by using the approximation of a narrow resonance and close arrangement of the repulsive levels. Zh. éksp. Teor. Fiz. 115, 1337–1352 (April 1999)     

Quantum nature of proton transferring across one-dimensional potential fields

Proton transfer plays a key role in the applications of advanced energy materials as well as in the functionalities of biological systems.In this work,based on the transfer matrix method,we study the quantum effects of proton transfer in a series of one-dimensional(1 D) model potentials and numerically calculate the quantum probability of transferring across single and double barriers(wells).In the case of single barriers,when the incident energies of protons are above the barrier height,the quantum oscillations in the transmission coefficients depend on the geometric shape of the barriers.It is found that atomic resonant tunneling(ART) not only presents in the rectangular single well and rectangular double barriers as expected,but also exists in the other types of potential wells and double barriers.For hetero-structured double barriers,there is no resonant tunneling in the classical forbidden zone,i.e.,in the case when the incident energy(E_i) is lower than the barrier height(E_b).Furthermore,we have provided generalized analysis on the characteristics of transmission coefficients of hetero-structured rectangular double barriers.     

Polaron effects on the binding energy of a double donor impurity in quantum wells in an electric field

The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results show that the cumulative effects of the electron–phonon coupling and the impurity–phonon coupling can contribute appreciably to the binding energy for the single bound polaron but only in some severe conditions for the double bound polaron. They also show that the binding energy is sensitive to the electric field strength. The comparison between the binding energies in the case of the impurity placed at the quantum well center and at the quantum well edge is also given.     

弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究

研究了低温(15 K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性. 研究表明,器件在零偏压下处于共振状态. 通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制. 所得结果可为弱耦合双量子点器件的制备提供基础. 关键词： 双量子阱 隧穿结构 磁电导振荡     

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro-(at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.     

组合注入质子导致不对称耦合双量子阱截面混合效应研究

关键词：     

InGaN/GaN laser diode characterization and quantum well number effect

The effect of quantum well number on the quantum efficiency and temperature characteristics of In- GaN/GaN laser diodes （LDs） is determined and investigated. The 3-nm-thick In0.13Ca0.87N wells and two 6-am-thick GaN barriers are selected as an active region for Fabry-Perot （FP） cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency （DQE）, and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.     

Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

Transition between quantum states in a parallel-coupled double quantum dot

Strong electron and spin correlations in a double quantum dot (DQD) can give rise to different quantum states. We observe a continuous transition from a Kondo state exhibiting a single-peak Kondo resonance to another exhibiting a double peak by increasing the interdot coupling (t) in a parallel-coupled DQD. The transition into the double-peak state provides evidence for spin entanglement between the excess electrons on each dot. Toward the transition, the peak splitting merges and becomes substantially smaller than t because of strong Coulomb effects. Our device tunability bodes well for future quantum computation applications.     

基于可调谐Fano干涉的超快全光开关

简要介绍了量子相干和干涉效应的研究动态和一项最新理论研究进展.设计了一个存在Fano类型隧穿感应量子干涉的GaAs/A lxGa1-xAs非对称量子阱结构.在该量子阱中,可通过一束控制光抑制量子干涉,进而调制信号光的传播特性.这一现象可用来实现一个宽带超快全光开关.     

金属薄膜中磁性交换耦合的量子阱效应机制研究新进展

通过对电子在量子阱中的运动行为与经典的弦振动的类比，形象地介绍了金属薄膜中磁性交换耦合的量子阱效应机制研究新进展。电子的几率密度变化周期依赖于双量子阱系统的对称性，其振荡周期符合一个晶格调制渡的理论预言双量子阱系统电子波函数的宇称和量子数的变化。     

Strain dependence of valence band structure and intersubband transitions in coupled quantum wells

We have calculated the structure of the valence bands and its dependence on strain in a lattice mismatched quantum well, and in double quantum wells with equal and unequal well thicknesses. We have used the 4×4 Luttinger-Kohn Hamiltonian and the envelope function approximation. Further the character of the strain dependence of optical transitions in valence band was analysed in all of these structures. It has been found that the strain dependence of the valence band structure and optical momentum matrix elements is stronger in the double quantum well than in the single quantum well. This result is potentially useful in valence band engineering and device applications.     

Polaronic effects on the energy levels of a double donor impurity in quantum wells in the presence of a magnetic field

In the presence of a magnetic field the Hamiltonian of the single or double polaron bound to a helium-type donor impurity in semiconductor quantum wells (QWs) are given in the case of positively charged donor center and neutral donor center. The couplings of an electron and the impurity with various phonon modes are considered. The binding energy of the single and double bound polaron in Al_xlGa _1-xlAs/GaAs/Al_xrGa _1-xrAs QWs are calculated. The results show that for a thin well the cumulative effects of the electron-phonon coupling and the impurity-phonon coupling can contribute appreciably to the binding energy in the case of ionized donor. In the case of neutral donor the contribution of polaronic effects are not very important, however the magnetic field significantly modifies the binding energy of the double donor. The comparison between the binding energies in the case of the impurity placed at the quantum well center and at the quantum well edge is also given. Received 16 February 1999     

无反射势阱中粒子运动的双波函数描述

应用双波函数量子理论,得到了描述无反射势阱中单粒子运动状态的力学量的时间演化方程,而通常量子力学中的平均值公式可描述为双波函数对某类系综的平均结果。 关键词：     

Design and analysis of electroabsorptive quantum well based double ring resonators for wavelength switching applications

We propose and present the design and analysis of a new double ring resonator structure for switching applications. The structure is based on the use of quantum wells that act as the active light guiding medium. The proposed ring resonator structure can be turned on or off by varying the absorption in the rings through external applied voltages. The absorption spectra are calculated for various quantum well designs using a simple model to predict the switching characteristics of double ring resonator structure. Simulation results show that amount of switching is a strong function of absorption, and is critically dependent on quantum well parameters and the applied electric field.     

Polarization qubit phase gate in a coupled quantum-well nanostructure

We show that a giant Kerr nonlinearity with a relatively large cross phase modulation (CPM) phase-shift can be used for realizing polarization quantum phase gate based on the nonlinear optical response in a coupled semiconductor double quantum well (SDQW) structure via intersubband transitions.     

The breaking of quantum double symmetries by defect condensation

In this paper, we study the phenomenon of Hopf or more specifically quantum double symmetry breaking. We devise a criterion for this type of symmetry breaking which is more general than the one originally proposed in F.A. Bais, B.J. Schroers, J.K. Slingerland [Broken quantum symmetry and confinement phases in planar physics, Phys. Rev. Lett. 89 (2002) 181601]; Hopf symmetry breaking and confinement in (2+1)-dimensional gauge theory, JHEP 05 (2003) 068], and therefore extends the number of possible breaking patterns that can be described consistently. We start by recalling why the extended symmetry notion of quantum double algebras is an optimal tool when analyzing a wide variety of two-dimensional physical systems including quantum fluids, crystals and liquid crystals. The power of this approach stems from the fact that one may characterize both ordinary and topological modes as representations of a single (generally nonabelian) Hopf symmetry. In principle a full classification of defect mediated as well as ordinary symmetry breaking patterns and subsequent confinement phenomena can be given. The formalism applies equally well to systems exhibiting global, local, internal and/or external (i.e. spatial) symmetries. The subtle differences in interpretation for the various situations are pointed out. We show that the Hopf symmetry breaking formalism reproduces the known results for ordinary (electric) condensates, and we derive formulae for defect (magnetic) condensates which also involve the phenomenon of symmetry restoration. These results are applied in two papers which will be published in parallel [C.J.M. Mathy, F.A. Bais, Nematic phases and the breaking of double symmetries, arXiv:cond-mat/0602109, 2006; F.A. Bais, C.J.M. Mathy, Defect mediated melting and the breaking of quantum double symmetries, arXiv:cond-mat/0602101, 2006].