AlGaInAs半导体饱和吸收体调Q特性的理论与实验研究究

利用通过金属化学气相沉积法长成的AlGaInAs饱和吸收体,对808 nm LD泵浦的Nd:YVO₄键合晶体进行被动调Q，获得了波长为1.06 mm的激光脉冲，测量了脉冲能量、脉冲宽度、脉冲重复率随泵浦功率的变化。当泵浦功率为10.57 W时，激光平均输出功率为3.45 W，斜效率为39 %，重复频率达到最大值101 kHz。当泵浦功率为8.07 W时，脉冲宽度达到最小值1.76 ns。利用速率方程对该激光器进行理论分析，计算出输出脉冲能量、峰值功率、脉冲宽度和重复频率的理论值，实验结果和理论结果基本一致。

Theoretical and Experimental Study on the Q-switching Characteristics of AlGaInAs Saturable Absorber

The AlGaInAs semiconductor saturable absorber grown by Metal-organic Chemical Vapor Deposition was used as the saturable absorber in a 808 nm LD-pumped passively Q-switched Nd:YVO4 laser at 1.06 ?m. The dependences of the pulse energy, pulse width, pulse repetition rate on the pumping power were measured. With an incident pump power of 10.57 W, an average output power of 3.45 W was obtained, the corresponding slope efficiency was 39 %. At this pump power, the repetition rate reached the maximum value of 101 kHz. The Q-switched pulse width reached the minimum of 1.76 ns with an incident pump power of 8.07 W. Using the rate equations of passively Q-switched lasers, the theoretical results for the pulse energy, pulse width, pulse repetition rate were obtained, and they showed agreement with the experimental results on the whole.