Effects of metal-support interactions on the electronic structures of metal atoms adsorbed on the perfect and defective MgO(1 0 0) surfaces

The electronic structures of Ni, Pd, Pt, Cu, and Zn atoms adsorbed on the perfect MgO(1 0 0) surface and on a surface oxygen vacancy have been studied at the DFT/B3LYP level of theory using both the bare cluster and embedded cluster models. Ni, Pd, Pt, and Cu atoms can form stable adsorption complexes on the regular O site of the perfect MgO(1 0 0) surface with the binding energies of 19.0, 25.2, 46.7, and 17.3 kcal/mol, respectively, despite very little electron transfer between the surface and the metal atoms. On the other hand, adsorptions of Ni, Pd, Pt, and Cu atoms show strong interaction with an oxygen vacancy on the MgO(1 0 0) surface by transferring a significant number of electron charges from the vacancy to the adsorbed metal atoms and thus forming ionic bonds with the vacancy site. These interactions on the vacancy site for Ni, Pd, Pt, and Cu atoms increase the binding energies by 25.8, 59.7, 85.2, and 19.1 kcal/mol, respectively, compared to those on the perfect surface. Zn atom interacts very weakly with the perfect surface as well as the surface oxygen vacancy. We observed that the interaction increases from Ni to Pt in the same group and decreases from Ni to Zn in the same transition metal period in both perfect and vacancy systems. These relationships correlate well with the degrees of electron transfer from the surface to the adsorbed metal atom. The changes in the ionization potentials of the surface also correlate with the adsorption energies or degrees of electron transfers. Madelung potential is found to have significant effects on the electronic properties of metal atom adsorptions on the MgO(1 0 0) surface as well as on an oxygen vacancy, though it is more so for the latter. Furthermore, the Madelung potential facilitates electron transfer from the surface to the adsorbed metal atoms but not in the other direction.     

Oxygen vacancy pairs on CeO2(110): A DFT + U study

Oxygen vacancy pairs have been suggested to play a role in the reduction of NO molecules on ceria and for the oxidation processes of reducible rare-earth oxides. The formation energy of the oxygen vacancy pairs and the changes in the structural and electronic properties of the ceria (110) surface with oxygen vacancy pairs are investigated using density-functional theory (DFT + U) methodology within the generalized gradient approximation. It is found that the excess electrons localize on the Ce ions neighbouring the vacancies, and the most stable structure for the oxygen vacancy pairs on the ceria (110) surface is at next-nearest-neighbour site.     

Methanol decomposition on the β-Ga2O3 (1 0 0) surface: A DFT approach

Density functional theory (DFT) cluster model calculations on methanol reactions on the β-Ga₂O₃ (1 0 0) surface have been realized. β-Ga₂O₃ structure has tetrahedral and octahedral ions and the results of gallia-methanol interaction are different depending on the local surface chemical composition. The surface without oxygen vacancies is very reactive and produces the methanol molecule decomposition. The unsaturated surface oxygen atoms strongly oxidize the methanol molecule. CO₂ and H₂O molecules are produced when methanol reacts with a free oxygen vacancy surface on octahedral gallium sites. On the other hand, H₂CO is found after the reaction of this molecule with a free O vacancy surface on tetrahedral gallium sites. A weak interaction between the remaining CO₂ molecule and the oxide surface was found, being this molecule easy to desorb. Otherwise, H₂CO has a stronger surface bond and it could suffer a later oxidation.     

Reaction mechanism for CO oxidation on Cu(3 1 1): A density functional theory study

The microscopic reaction mechanism for CO oxidation on Cu(3 1 1) surface has been investigated by means of comprehensive density functional theory (DFT) calculations. The elementary steps studied include O₂ adsorption and dissociation, dissociated O atom adsorption and diffusion, as well as CO adsorption and oxidation on the metal. Our results reveal that O₂ is considerably reactive on the Cu(3 1 1) surface and will spontaneously dissociate at several adsorption states, which process are highly dependent on the orientation and site of the adsorbed oxygen molecule. The dissociated O atom may likely diffuse via inner terrace sites or from a terrace site to a step site due to the low barriers. Furthermore, we find that the energetically most favorable site for CO molecule on Cu(3 1 1) is the step edge site. According to our calculations, the reaction barrier of CO + O → CO₂ is about 0.3 eV lower in energy than that of CO + O₂ → CO₂ + O, suggesting the former mechanism play a main role in CO oxidation on the Cu(3 1 1) surface.     

Oxidation of CO on Fe2O3 model surfaces

Using first principles calculations based on a gradient corrected density functional formalism we show that Fe₂O₃ nano-particles with (1 0 0) and (0 0 0 1) surface orientations can oxidize CO to form CO₂ with or without the presence of O₂. However, depending on the surface orientation, the oxidation occurs through differing sequences. On the (1 0 0) surface, in the absence of O₂, two CO molecules are required for one CO oxidation in a concerted reaction while on a oxygen terminated (0 0 0 1) surface, a single CO molecule itself, without the aid of a second CO, can react with the lattice oxygen atoms to form CO₂. In the presence of O₂, the O vacancies created by an initial oxidation through lattice oxygen act as the favored sites for O₂ adsorption which can subsequently oxidize the incoming CO. Detailed reaction paths and the corresponding energetics for the proposed mechanisms are also studied.     

Density functional theory study of formaldehyde adsorption and decomposition on Co-doped defective CeO_2(110) surface

Formaldehyde as an air pollutant to adverse health effects for humanity has been getting attention. The adsorption and dissociation of formaldehyde(HCHO) on the Co_xCe_(1-x_O_(2-δ)(110) surface were investigated by the density functional theory(DFT) calculations. We calculated the oxygen vacancy formation energy as the function of its site around dopant Co in detail. The results showed that Co doping was accompanied by compensating oxygen hole spontaneous formation.The adsorption configurations and bindings of HCHO at different locations on the Co_xCe_(1-x)O_2(110) were presented.Four possible pathways of oxidation of formaldehyde on the catalytic surface were explored. The results suggested that formaldehyde dissociation at different adsorption sites on the doped CeO_2(110) — first forming dioxymethylene(CH_2O_2)intermediate, and then decomposing into H_2O, H_2, CO_2, and CO molecules. It was found that the presence of cobalt and oxygen vacancy significantly prompted the surface activity of CeO_2.     

CO adsorption on oxygen-modified molybdenum surfaces

Structures of carbon monoxide layers on the oxygen-modified Mo(1 1 0) and Mo(1 1 2) surfaces have been investigated by means of density-functional (DFT) calculations. It is found that CO molecules adsorb at hollow sites on the O/Mo(1 1 0) surface and nearly atop Mo atoms on the O/Mo(1 1 2) surface. The favorable positions for adsorption are shown to be near protrusions of electron density above the Mo surface atoms. The presence of oxygen on the molybdenum surface significantly reduces the binding energy of the CO molecule with the substrate; on the oxygen-saturated Mo(1 1 0) surface, the adsorption of CO is completely blocked. The calculated local densities of states (LDOS) demonstrate that the O 2s peak for O adsorbed on Mo(1 1 0) surface is at −19 eV (with respect to the Fermi level), while for the oxygen atom of an adsorbed CO molecule the related 3σ molecular orbital gives rise to a peak at −23 eV. This difference stems from the bonding of the O atom either with Mo surface for adsorbed O or with C atom in adsorbed CO, and therefore the position of the O 2s peak in photoemission spectra can serve as a convincing argument in favor of either the presence or absence of the CO dissociation on Mo surfaces.     

Enhanced gas-sensing behaviour of Ru-doped SnO2 surface: A periodic density functional approach

A theoretical study on Ru-doped rutile SnO₂(1 1 0) surface has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA-RPBE) level with a periodic supercell approach. Electronic structure analysis was performed based on the band structure and partial density of states. The results provide evidence that the electronic structures of SnO₂(1 1 0) surface are modified by the surface Ru dopant, in which Ru 4d orbital are located at the edge of the band gap region. It is demonstrated that molecular oxygen adsorption characteristics on stoichiometric SnO₂(1 1 0) surface are changed from endothermic to exothermic due to the existence of surface Ru dopant. The dissociative adsorption of molecular oxygen on the Ru_5c/SnO₂(1 1 0) surface is exothermic, which indicates that Ru could act as an active site to increase the oxygen atom species on SnO₂(1 1 0) surface. Our present study reveals that the Ru dopant on surface is playing both electronic and chemical role in promoting the SnO₂ gas-sensing property.     

The effect of defects on the hydrogenation in Mg (0 0 0 1) surface

Density-functional theory was presented to investigate the hydrogen dissociation on a pure, Pt-doped, vacancy and oxide Mg(0 0 0 1) surface. Our results show that the energy barriers are 1.05, 0.39, 0.93 and 1.33 eV for H₂ dissociation on the pure, Pt-doped, vacancy and oxide Mg surface, respectively. The calculation results imply that the initial dissociation of H₂ is enhanced significantly for the Pt-doped Mg(0 0 0 1) surface, negligible for the vacancy model and weekend for the oxide model. The density of state results shows that, following the dissociation reaction coordinate, the H–H interactions are weeker for the Pt-doped model while interactions become stronger for the oxide model. It is suggested that the dissociation process is facilitated when Pt atom acts as catalyst and oxide overlayers delay hydrogen adsorption on the Mg layer. The present study will help us understand the defect role being played for the improvement or opposition effect in absorption kinetics of H₂ on the Mg(0 0 0 1) surface.     

FS and FS(OH) defect centers at the MgO(1 0 0) surface: cluster and periodic calculations

We present a model of a new paramagnetic defect center which results from the interaction of atomic hydrogen with the MgO(1 0 0) surface. DFT calculations have been performed using periodic supercells and embedded cluster models where long-range polarization effects are included explicitly. The H atom promotes the creation of an oxygen vacancy (F center) by formation of the F_S⁺(OH⁻) defect where an hydroxyl group is adsorbed near an electron trapped in an oxygen vacancy. This new center has some characteristics similar to those of the classical F_S⁺ centers but a smaller formation energy; furthermore, being globally neutral, it can be treated also with supercell methods.     

Formation of interface and surface oxides on supported Pd nanoparticles

We have quantitatively studied the interaction between oxygen and an Fe₃O₄-supported Pd model catalyst by molecular beam (MB) methods, time resolved IR reflection absorption spectroscopy (TR-IRAS) and photoelectron spectroscopy (PES) using synchrotron radiation. The well-shaped Pd particles were prepared in situ by metal evaporation and growth under ultrahigh vacuum (UHV) conditions on a well-ordered Fe₃O₄ film on Pt(1 1 1).It is found that for oxidation temperatures up to 450 K oxygen predominantly chemisorbs on metallic Pd whereas at 500 K and above (∼10⁻⁶ mbar effective oxygen pressure) large amounts of Pd oxide are formed. These Pd oxide species preferentially form a thin layer at the particle/support interface, stabilized by the iron-oxide support. Their formation and reduction is fully reversible. Upon decomposition, oxygen is released which migrates back onto the metallic part of the Pd surface. In consequence, the Pd interface oxide layer acts as an oxygen reservoir, the capacity of which by far exceeds the amount of chemisorbed oxygen on the metallic surface.Additionally, Pd surface oxides can also be formed at temperatures above 500 K. The extent of surface oxide formation critically depends on the oxidation temperature. This effect is addressed to different onset temperatures for oxidation of the particle facets and sites. It is shown that the presence of Pd surface oxides sensitively modifies the adsorption and reaction properties of the model catalyst, i.e. by lowering the CO adsorption energy and CO oxidation probability. Still, a complete reduction of the Pd surface oxides can be obtained by extended CO exposure, fully reestablishing the metallic Pd surface.     

Ab initio study of oxygen point defects on tungsten trioxide surface

The gas response of tungsten trioxide (WO3) based sensors strongly depends on the surface properties. Reconstructed surfaces and oxygen point defects at the surface of the monoclinic WO3 are studied using a self-consistent scheme based on first-principle. The oxygen vacancy is found to be the predominant defect independently of the oxygen partial pressure. Indeed, under rich oxygen atmosphere the formation enthalpies are found to be 1.45 eV in LDA (1.28 eV in GGA) for the oxygen vacancy instead of 2.70 eV (2.42 eV) for the oxygen adatom. When the oxygen partial pressure is lowered, the oxygen vacancy formation enthalpy decreases and becomes exothermic under very O-poor condition (? 1.65 eV in LDA and ? 1.36 eV in GGA). On the other hand, the formation enthalpy of an oxygen adatom rises. Finally, the oxygen vacancy formation acts as a n-doping by introducing negative charge carriers at the bottom of the conduction band. All these results can be very helpful in order to explain the electrical resistivity measurements.     

Theoretical studies on chemisorption of oxygen on β-Mo2C catalyst and its surface oxidation

Oxygen chemisorption on β-Mo₂C surface and its oxidation have been investigated by using the density functional theory with the periodic models. Two surfaces of (011) and (101) were chosen to perform the calculations and the most stable surface structures together with the energetics of oxygen stepwise adsorption were identified. Thermodynamic effect of temperature and reactant pressure on the chemisorption and surface oxidation was investigated. The results suggest that the (101) surface is more active than the (011) surface towards the oxygen adsorption. The (101) surface can be fully oxidized by O₂ at P_O2/P⁰ of 10^? 21–10⁴ and temperature of 100–700 K. For the (011) surface with O₂ as the oxidant, the most stable structure is that with 1/2 ML or 7/8 ML oxygen coverage, depending on the temperature and P_O2/P⁰ value. The increase of gaseous oxidant pressure or decrease of temperature can enhance the oxidation of β-Mo₂C surface and lead a more negative reaction Gibbs free energy. High temperature and low oxidant pressure may hinder the surface oxidation process.     

CO interaction with Au atoms adsorbed on terrace, edge and corner sites of the MgO(1 0 0) surface. Electronic structure and vibrational analysis from DFT

The interaction of CO with Au atoms adsorbed on terrace and low-coordinates sites (edge and corner) of the MgO(1 0 0) surface was studied using the density functional theory (DFT) in combination with embedded cluster models. Surface anionic (O²⁻) and neutral oxygen vacancy (F_s) sites were considered. In all the cases, the CO stretching frequencies are shifted with respect to free CO with values between −232 and −358 cm⁻¹. In particular, the values for Au on F_s at edge and corner are shifted to higher stretching frequencies by 100 and 59 cm⁻¹, respectively, with respect to the value on a perfect MgO(1 0 0) surface. This result is in agreement with recent scanning tunneling microscopy and infrared spectroscopy experiments where a corresponding shift of 70 cm⁻¹ was observed by comparing the measurements on perfect and O-deficient MgO(1 0 0) surfaces. However, these results are different than expected because Au atoms on F_s centers are negatively charged and, therefore, according to the generally accepted scheme the CO frequency should be red-shifted with respect to the adsorption on anionic five-coordinated site where the Au atom is essentially neutral. The following picture emerges from the present results: the single occupied HOMO(α) of Au atom on F_s at low-coordinated sites consists in two lobes extended sideward the Au atom. For symmetry reasons, this MO overlaps efficiently with the 2π^∗ MO of CO. This bonding contribution to the Au-CO link is counteracted by a Pauli repulsion between the 5σ MO of CO and more internal orbitals (the HOMO-1(α) and the HOMO(β)) centered on Au. In consequence, CO is forced to vibrate against a region with a high electron density. This is the so-called “wall effect” which by itself contributes to higher CO frequency values.     

Influence of Dopants in ZnO Films on Defects

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet S_Al>S_un>S_Ag for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.     

Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4 × 2)/c(8 × 2)

The substrate reactions of three common oxygen sources for gate oxide deposition on the group III rich InAs(0 0 1)-(4 × 2)/c(8 × 2) surface are compared: water, hydrogen peroxide (HOOH), and isopropyl alcohol (IPA). Scanning tunneling microscopy reveals that surface atom displacement occurs in all cases, but via different mechanisms for each oxygen precursor. The reactions are examined as a function of post-deposition annealing temperature. Water reaction shows displacement of surface As atoms, but it does not fully oxidize the As; the reaction is reversed by high temperature (450 °C) annealing. Exposure to IPA and subsequent low-temperature annealing (100 °C) show the preferential reaction on the row features of InAs(0 0 1)-(4 × 2)/c(8 × 2), but higher temperature anneals result in permanent surface atom displacement/etching. Etching of the substrate is observed with HOOH exposure for all annealing temperatures. While nearly all oxidation reactions on group IV semiconductors are irreversible, the group III rich surface of InAs(0 0 1) shows that oxidation displacement reactions can be reversible at low temperature, thereby providing a mechanism of self-healing during oxidation reactions.     

Structural,electronic, stability and reduction properties of perovskite surfaces: The case of rhombohedral BaCeO3

The (100), (110) and (111) surfaces of rhombohedral phase BaCeO₃ perovskite with two kinds of surface terminations are investigated using a periodic DFT + U method. We show that the lowest energy for surface formation via crystal cutting (cleavage energy) corresponds to (100) terminations. Out of all studied terminations, only BaO(100) and BaCeO(110) are stable with respect to precipitation of oxide phases and metals in respective ranges of oxygen chemical potentials, whereas CeO2(100) termination is not stable with respect to CeO₂ precipitation for all temperatures and oxygen partial pressures. Analyzing the electronic properties of the surfaces, we have established that reduction of the cerium oxidation state occurs in response to the local stoichiometry (lack of surface oxygen's, etc.) rather than as a result of breaking of cerium–oxygen bonds and formation of under-coordinated cerium ions. This equally applies to cerium reduction in the case of surface vacancy formation. We have calculated the vacancy formation energies as these can be viewed as a measure of surface activity in the catalytic reaction with various adsorbates. We find that CeO2 termination of the (100) surface and modified O2 termination of the (110) surface (O termination) have the lowest vacancy formation energies.     

Atomistic simulation of point defects at low-index surfaces of noble metals

The formation energies and the migration energies of an isolated vacancy and adatom formed on low-index surfaces are calculated with MAEAM for three noble metals Cu, Ag and Au. The results indicate that the formation energies of an isolated vacancy or adatom increase with increasing atom density in the sequence (1 1 0) → (1 0 0) → (1 1 1), and it is more difficult to form an adatom than to form a vacancy at the same surface. For the mobility of an isolated vacancy, the migration energy grows in the sequence (1 0 0) → (1 1 0) → (1 1 1) for each noble metal. However, a much less migration energy is obtained for the migration of an adatom on (1 1 1) surface.     

The oxidation and co reduction kinetics of a platinum surface

A thermogravimetric technique was used to study the oxidation and CO reduction kinetics of Pt as a function of temperature, T. The measurements were performed on Pt powder (particle sizes 0.8–2.5 μm) at 1 atm pressure. After exposure to 1 atm of oxygen at 600 K for 1 h, the total uptake of oxygen by the powder amounted to less than one oxygen atom per Pt surface atom and followed a logarithmic growth law. For 400 < T < 600 K, the logarithmic rate constant, K₀, could be described by an Arrhenius law with an apparent activation energy of 2.6 kcal/mole. Above 600 K, K₀ slowly decreased, an effect believed to be associated with the dissociation of the oxide between 650 and 850 K. Oxidation isotherms were calculated using the low pressure oxygen sticking coefficient data of Hopster et al. The calculated and measured oxidation isotherms were found to be in remarkable agreement. The CO reduction data were more difficult to analyze but showed that the reduction rate had a stronger temperature dependence (~11 kcal/mole) than the oxidation rate. For427 < T<487 K, the general time scale of the reduction process was 10–50 min. Typical durations of the oxidation and CO reduction processes are consistent with the periods observed in studies of the oscillatory rate of CO oxidation over a Pt catalyst.     

Tailoring oxide properties: An impact on adsorption characteristics of molecules and metals

Both density functional theory calculations and numerous experimental studies demonstrate a variety of unique features in metal supported oxide films and transition metal doped simple oxides, which are markedly different from their unmodified counterparts. This review highlights, from the computational perspective, recent literature on the properties of the above mentioned surfaces and how they adsorb and activate different species, support metal aggregates, and even catalyse reactions. The adsorption of Au atoms and clusters on metal-supported MgO films are reviewed together with the cluster׳s theoretically predicted ability to activate and dissociate O₂ at the Au–MgO(100)/Ag(100) interface, as well as the impact of an interface vacancy to the binding of an Au atom. In contrast to a bulk MgO surface, an Au atom binds strongly on a metal-supported ultra-thin MgO film and becomes negatively charged. Similarly, Au clusters bind strongly on a supported MgO(100) film and are negatively charged favouring 2D planar structures. The adsorption of other metal atoms is briefly considered and compared to that of Au. Existing computational literature of adsorption and reactivity of simple molecules including O₂, CO, NO₂, and H₂O on mainly metal-supported MgO(100) films is discussed. Chemical reactions such as CO oxidation and O₂ dissociation are discussed on the bare thin MgO film and on selected Au clusters supported on MgO(100)/metal surfaces. The Au atoms at the perimeter of the cluster are responsible for catalytic activity and calculations predict that they facilitate dissociative adsorption of oxygen even at ambient conditions. The interaction of H₂O with a flat and stepped Ag-supported MgO film is summarized and compared to bulk MgO. The computational results highlight spontaneous dissociation on MgO steps. Furthermore, the impact of water coverage on adsorption and dissociation is addressed. The modifications, such as oxygen vacancies and dopants, at the oxide–metal interface and their effect on the adsorption characteristics of water and Au are summarized. Finally, more limited computational literature on transition metal (TM) doped CaO(100) and MgO(100) surfaces is presented. Again, Au is used as a probe species. Similar to metal-supported MgO films, Au binds more strongly than on undoped CaO(100) and becomes negatively charged. The discussion focuses on rationalization of Au adsorption with the help of Born–Haber cycle, which reveals that the so-called redox energy including the electron transfer from the dopant to the Au atom together with the simultaneous structural relaxation of lattice atoms is responsible for enhanced binding. In addition, adsorption energy dependence on the position and type of the dopant is summarized.