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The effect of defects on the hydrogenation in Mg (0 0 0 1) surface
Authors:Guangxin Wu  Jieyu Zhang  Yongquan Wu  Qian Li  Kuochih Chou  Xinhua Bao
Institution:aShanghai Key Laboratory of Modern Metallurgy & Materials Processing, Shanghai University, Yanchang Road, Shanghai 200072, PR China;bDepartment of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, PR China;cCollege of Science, Shanghai University, Shanghai 200444, PR China
Abstract:Density-functional theory was presented to investigate the hydrogen dissociation on a pure, Pt-doped, vacancy and oxide Mg(0 0 0 1) surface. Our results show that the energy barriers are 1.05, 0.39, 0.93 and 1.33 eV for H2 dissociation on the pure, Pt-doped, vacancy and oxide Mg surface, respectively. The calculation results imply that the initial dissociation of H2 is enhanced significantly for the Pt-doped Mg(0 0 0 1) surface, negligible for the vacancy model and weekend for the oxide model. The density of state results shows that, following the dissociation reaction coordinate, the H–H interactions are weeker for the Pt-doped model while interactions become stronger for the oxide model. It is suggested that the dissociation process is facilitated when Pt atom acts as catalyst and oxide overlayers delay hydrogen adsorption on the Mg layer. The present study will help us understand the defect role being played for the improvement or opposition effect in absorption kinetics of H2 on the Mg(0 0 0 1) surface.
Keywords:Hydrogen storage  Defects  Density-functional theory  Dissociation activation energy
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