Electronic structure of ZrTiO4 and HfTiO4: Self-consistent cluster calculations and X-ray spectroscopy studies

Total and partial densities of states of the constituent atoms of ZrTiO₄ and HfTiO₄ titanates have been calculated using a self-consistent cluster method as incorporated in the FEFF8 code. The calculations reveal the similarity of the electronic structure of both titanates and indicate that the valence band of the compounds under consideration is dominated by contributions of O 2p states. These states contribute throughout the whole valence-band region; however their maximum contributions occur in the upper portion of the band. Other significant contributors in the valence-band region are Ti 3d and Zr 4d states in ZrTiO₄ and Ti 3d and Hf 5d states in HfTiO₄. All the above d-like states contribute throughout the whole valence-band region of the titanates; however maximum contributions of the Ti 3d states occur in the upper portion, whilst those of the Zr 4d (Hf 5d) states are in the central portions of the valence band. The FEFF8 calculations render that the bottom of the conduction band of ZrTiO₄ and HfTiO₄ is dominated by contributions of Ti 3d^? states, with also smaller contributions of Zr 4d^?/Hf 5d^? and O 2p^? states. To verify the above FEFF8 data, the X-ray emission bands, representing the energy distributions of mainly O 2p, Ti 3d and Zr 4d states, were measured and compared on a common energy scale. These experimental data are found to be in agreement with the theoretical FEFF8 results for the electronic structure of ZrTiO₄ and HfTiO₄ titanates. Additionally, X-ray photoelectron valence-band and core-level spectra were recorded for the constituent atoms of the titanates under study.     

X-ray and UV photoelectron spectra of the oxides NbO2, MoO2 and RuO2

HeI and Mg Kα_1,2 valence band photoelectron spectra of polycrystalline samples of NbO₂, MoO₂ and RuO₂ are reported. A marked increase is observed in the intensity of the metal 4d structure, relative to that due to oxygen 2p electrons, on changing from X-ray to UV excitation. The superior resolution of the 4d signals in the HeI spectra reveals the presence of the Fermi edge in the metallic oxides MoO₂ and RuO₂. In addition, the HeI spectrum of MoO₂ shows a splitting of the metal 4d signal, confirming established ideas concerning the electronic structure of such materials.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Structural, elastic, electronic and optical properties of a new layered-ternary Ta4SiC3 compound

We propose a new layered-ternary Ta₄SiC₃ with two different stacking sequences (α- and β-phases) of the metal atoms along c axis and study their structural stability. The mechanical, electronic and optical properties are then calculated and compared with those of other compounds M₄AX₃ (M=V, Nb, Ta; A=Al, Si and X=C). The predicted compound in the α-phase is found to possess higher bulk modulus than these compounds. The independent elastic constants of the two phases are also evaluated and the results discussed. The electronic band structures for α- and β-Ta₄SiC₃ show metallic conductivity. Ta 5d electrons are mainly contributing to the total density of states (DOS). We see that the hybridization peak of Ta 5d and C 2p lies lower in energy and the Ta 5d-C 2p bond is stronger than Ta 5d-Si 3p bond. Further an analysis of the different optical properties shows the compound to possess improved behavior compared to similar types of compounds.     

Structure electronique des oxydes de cobalt CoO et Co3O4

The total density of occupied states in the valence band of CoO and Co₃O₄ is determined by XPS and UPS. From variations of excitation probability of the bands, the 4 e V wide O2_p band is shown to be located around 5 eV for both oxides, while structures obtained from photoionisation of the localized 3d band spread over 10 eV range below the Fermi level overlapping with O2_p band. The 3d peaks located at binding energy <3 eV correspond to the calculated energy of the d_n ?1 manifold final state in the octahedral and tetrahedral crystal field of CoO and Co₃O₄. The 3d levels at higher binding energy are shown to occur from configuration interaction in both final and initial states. These last peaks are higher in intensity for CoO relative to Co₃O₄. A superior limit for the width of the 3d initial band in a one electron energy diagram is given to be <3 eV. This value associated to the Coulomb correlation energy measured equal to ~3 eV. This value associated to the Coulomb correlation energy measured equal to ~3 eV from shake-up and Auger energy confirms the Mott insulator nature of CoO.     

Electronic structure of PbI2 from photoelectron spectra and the exciton problem

The valence band density of states for PbI₂ is determined from X-ray and u.v. induced photoelectron spectra. It is shown that the band derived from Pb 6s states is at 8 eV binding energy and not at the top of the valence bands as suggested by band structure and charge density calculations. A rigid shift in the predominantly iodine 5p derived bands to lower binding energy brings the band structure calculations into essential agreement with experiment. Pb 5d core level binding energies determined here are used to derive core level exciton energies of 0.7 eV from published reflectivity spectra.     

Electronic structure of TiH2

The electronic structure of TiH₂ has been studied using the augmented-plane-wave method and the LCAO interpolation. The density of states and its orbital components show that the conduction band is Ti d-like and that the valence band is largely derived from the hydrogen orbitals with small Ti 3d hybridization. The electronic charges on the hydrogen atom are ～ 1.5 as compared to 1.6–1.7 of the rare-earth metal hydrides.     

Optical studies of (NH4)2SO4 single crystal in the paraelectric phase

Transmittance and absorbance spectra of (NH₄)₂SO₄ single crystals along [010] direction were measured at different temperatures (296, 308, 318, 328 and 348 K) in the paraelectric phase. The absorption coefficient was computed and the analysis of the data revealed the existence of two optical transitions in (NH₄)₂SO₄ single crystals. The direct and indirect band gaps were shifted towards the longer wavelength with increasing temperature. The data on the allowed indirect transition was analyzed and interpreted in terms of two valence bands originated by spin orbit interaction and crystal field splitting. The momenta E_p were calculated as the difference between E_g1, the first valence to conduction band, and E_g2 for the second valence band at different temperatures. The results of extinction coefficient (k), the refractive index (n), and dielectric constants (ε) were also discussed and calculated as a function of wave length (λ). The heat treatment of the crystals proved that the variations of these optical parameters can be consequence of the internal microstructure changes caused by annealing.     

Soft x-ray absorption of FePS3 and NiPS3

With the partial yield technique we measured the absorption spectra of several core levels in FePS₃ and NiPS₃. The M_{2, 3} spectra of Fe and Ni are interpreted as localized transitions 3p⁶3d^m?3p⁵ 3d^m+1 of the transition metal ion, split into a multiplet by final state multiconfiguration interaction. The P L_{2, 3}, S L_{2, 3}, and S L₁ spectra are similar to each other and are interpreted in terms of the projected density of states of the conduction bands derived from the states of the (P₂S₆)^4? cluster.     

A SCF-Xα MO study of core photoelectron shake-up satellites in MnF2 and MnI2

SCF-Xα MO calculations on Mn2p core ion states of MnF₂ and MnI₂ suggest that on energetic grounds the observed Mn2p photoelectron satellites should be assigned to shake-up transitions from the Mn3d crystal field orbitals to the conduction band.     

PbWO4电子结构的密度泛函计算

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法模拟计算了PbWO₄晶体的本征能级结构.发现价带主要由O2p轨道组成,含有部分W5d轨道;导带主要由W5d和O2p的轨道组成.发现导带底由Pb6p_1/2的狭窄能级占有.禁带宽度和价带宽度分别约为4.8和4eV.计算结果很好地解释了实验得到的反射谱,并从理论上分析了PbWO₄晶体蓝光的发光模型. 关键词： 密度泛函 电子结构 4')" href="#">PbWO₄     

Separation of the partial s- and p-densities of valence states of ZnO from UPS-measurements

UPS-spectra of the cleaved (0001) Zn and (000$\text{1}$) O surfaces of ZnO are taken at hv = 16.8, 21.2, 26.9, and 40.8 eV. Two maxima in the spectra at constant final energy are ascribed to high densities of conduction band states. Using the hv-dependence of the valence band emission, the partial s- and p-densities of states are separated. They yield similar excitation probabilities for Zn-4s-, 3d-, and O-2p-electrons.     

Electronic structure of CdTe probed by Cd and Te M4,5 X-ray emission spectra

We have investigated the bulk electronic structure of CdTe focusing on the Cd 5p and Te 5p valence states by X-ray emission spectroscopy (XES). Despite the very low fluorescence yields the Cd and Te M_4,5 (5p → 3d_3/2,5/2) spectra have been recorded successfully. A good correspondence has been found between the valence band XES and X-ray photoelectron spectra (XPS) by comparison on a common binding energy scale. We also performed a density functional theory calculation of the CdTe valence band, obtaining the Cd 4d, 5s, 5p and Te 5s, 5p local partial densities of states. The experimental Cd 5p and Te 5p derived from the X-ray emission spectra are in good agreement with the calculation. The intensity ratio of the Cd M_4,5 to the Te M_4,5 spectrum is obtained to be 0.25, in agreement with the ratio of the calculated Cd 5p to the Te 5p density of states in the CdTe upper valence band (0.22).     

Crystal growth and the electronic structure of Tl3PbCl5

Total and partial densities of states of constituent atoms of two tetragonal phases of Tl₃PbCl₅ (space groups P4₁2₁2 and P4₁) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method and Korringa-Kohn-Rostoker method within coherent potential approximation (KKR-CPA). The results obtained reveal the similarity of occupations of the valence band and the conduction band in the both tetragonal phases of Tl₃PbCl₅. The FP-LAPW and KKR-CPA data indicate that the valence band of Tl₃PbCl₅ is dominated by contributions of the Cl 3p-like states, which contribute mainly to the top and the central portion of the valence band with also significant contributions throughout the whole valence-band region. Further, the bottom of the valence band of Tl₃PbCl₅ is composed mainly of the Tl 6s-like states, while the bottom of the conduction band is dominated by contributions of the empty Pb 6p-like states. The KKR-CPA results allow to assume that the width of the valence band increases somewhat while band gap, E_g, decreases when changing the crystal structure from P4₁2₁2 to P4₁. The X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion-irradiated surfaces of a Tl₃PbCl₅ monocrystal grown by the Bridgman-Stockbarger method have been measured.     

过渡金属Fe或Ag掺杂K2Ti6O13的电子结构和光学性质

本文利用基于密度泛函理论（DFT）的第一性原理计算研究了它们的电子结构和光学性质.光学性质的计算结果和实验相一致.结果表明,Fe或Ag掺杂后,K₂Ti₆O₁₃的带隙中出现了杂质带且其带隙值变小,因而使掺杂后的K₂Ti₆O₁₃的吸收边发生红移并实现了其对可见光吸收.其中杂质带主要由Fe 3d态或Ag 4d态与Ti 3d态和O 2p态杂化而成.对于Fe掺杂的K₂Ti₆O₁₃,杂质带位于带隙中间,因此可以作为电子从价带跃迁到导带的桥梁.对于Ag掺杂的K₂Ti₆O₁₃,杂质带位于价带顶附近为受主能级,可以降低光生载流子的复合概率.实验和计算研究表明,通过Fe或Ag的掺杂可以实现了K₂Ti₆O₁₃对可见光的吸收,这对进一步研究K₂Ti₆O₁₃的光学性质具有重要意义.     

Electronically induced lattice distortion in WO3 and stability of ReO3 lattice

Structural phase transitions in WO₃ and the stability of cubic ReO₃ and M_xWO₃ lattices are attributed to the screening effect involving W or Re 5d and O 2p states on the lattice vibrations. The presence of the conduction electrons in ReO₃ or M_xWO₃ is shown to suppress this effect and to stabilize the cubic lattice.     

X-ray photoelectron spectroscopy of Co3O4, Fe3O4, Mn3O4, and related compounds

The metal 2p region spectra of the mixed valence spinels, Co₃O₄, Fe₃O₄, Mn₃O₄, and related compounds were studied. The satellite splittings of Co 2p_{$\text{3}\text{2}$} for the octahedrally coordinated cobaltous ions are 6.2 eV and those for the tetrahedrally coordinated ones are about 5.3 eV. The Co 2p spectrum for Co₃O₄ is considered to be the sum of spectra of magnetic cobaltous ions and low-spin cobaltic ions. In the cases of Fe₃O₄ and Mn₃O₄, the oxidation states were not clearly distinguished because both the divalent and trivalent ions of iron and manganese are high-spin.     

Temperature dependence of the fundamental absorption edge in CuGaSe2

The temperature dependence of the fundamental absorption edge in CuGaSe₂ single crystals was determined in the temperature range from 15 to 300 K. Above about 120 K the gap energy changes linearly with temperature with dE_g/dT = ? (2.1 ± 0.1) eV K^?1. The downshift in dE_g/dT of the I–III–VI₂ compounds compared to their II–VI analogs is discussed accounting for the p-d hybridization of the uppermost valence band.     

Electronic band structure of In2S3 and CdIn2S4 semiconductor spinels from the data of x-ray spectroscopy and theoretical calculations

The electronic band structure of the chalcogenide spinels In₂S₃ and CdIn₂S₄ has been studied using the FEFF8 program. It is shown that the valence band top is formed by the S p states mixed with the In s and In p states for In₂S₃ or with the Cd s, Cd p, In s, and In p states for CdIn₂S₄. Compared to In₂S₃, the presence of Cd atoms in the nearest environment of S atoms in CdIn₂S₄ does not considerably affect the electronic band structure. In CdIn₂S₄ the Cd 4d states, as well as the In 4d states, form a narrow localized band shifted deep into the valence band. The theoretical results are in good agreement with the experimental x-ray photoelectron and x-ray spectra.     

Interband optical transition strengths in SiO2, GeO2, SnO2 and TiO2

An analysis of interband optical transition strengths for a series of MO₂ oxides is presented which gives clear evidence for a direct proportionality between transition strengths (as measured by the dispersion energy) and nearest-neighbor cation coordination number. It is also found that neither the extent of O2p orbital delocalization nor the d-electron configuration has a strong influence on transition strengths suggestin that these strengths can be viewed, to a good approximation, as intrinsic properties of valence s,p-electrons which are largely independent of band structure details.