Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga<Subscript>1−<Emphasis Type="Italic">y</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>As barrier structures containing quantum wells

The mobility of electrons in vertical transport in GaAs/Ga_1−y Al _y As barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga_1−y Al _y As (0 ≤ y ≤ 0:26) linearly graded barriers between the n⁺-GaAs contacts and the Ga_0:74Al_0:26As central barrier, which contain N _w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N _w =0 and 2, whereas ionized impurity scattering is dominant in the samples with N _w =4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N _w =4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.      

Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode

Resonant tunneling of electrons is thoroughly studied in in-plane magnetic fields. Anticrossing is revealed in a spectrum of two-dimensional electrons at energies of optical phonons. The magnetic field changes the momentum of tunneling electrons and causes a voltage shift of a resonance in the tunnel spectra in accordance with the electron dispersion curve. Anticrossing is clearly observed in second derivative current-voltage characteristics of a resonant tunneling diode made of a double-barrier Al_0.4Ga_0.6As/GaAs heterostructure.     

Giant population inversion of hot electrons in GaAs/AlAs type heterostructures with quantum wells

The heating of electrons in an Al_xGa_1−x As/GaAs (x>0.42) heterostructure in a lateral (directed along the heterointerfaces) electric field is studied. Population inversion on the size-quantization subbands of the Γ valley of GaAs and a giant population inversion between the X-valley states of Al_xGa_1−x As and Γ-valley states of GaAs are predicted. The possibility of using these inversions for achieving stimulated IR emission is discussed. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 73–77 (10 July 1998)     

In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED,SIMS, and AES techniques

A combination of the surface diagnostic techniques Auger electron spectroscopy (AES), reflection high energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS) was used in order to get more detailed information on basic processes which lead to the formation of high quality monocrystalline GaAs and Al _x Ga_1−x As films by molecular beam epitaxy (MBE) under ultra-high vacuum conditions. The formation and changes of reconstructed surface structures on (100) GaAs as a function of growth parameters were observedduring growth by RHEED. AES was used to determine the relative ratio of Ga/As on the surface for different reconstructed structures, to investigate the impurity contamination on substrate surfaces and grown films, and to study the surface segregation of Sn in MBE GaAs during doping. Finally, intentional and unintentional impurities incorporated during the growth of GaAs and Al _x Ga_1−x As by MBE were detected by the SIMS technique immediately after growth within the reaction chamber.     

Multiple wavelength electroluminescence and laser generation in p-i-n resonant tunneling heterostructures

We report a design and electroluminescence (EL) investigation of a p-i-n resonant tunneling device based on an Al_0.4Ga_0.6As/GaAs graded-index waveguide heterostructure. The intrinsic region of the structure consists of a quantum well (QW) surrounded by multiple barrier energy filters providing simultaneous resonant occupation of electron and heavy-hole second excited subbands in the QW. Several peaks are observed in the EL spectra, confirming occupation of the excited subbands. The EL efficiency displays a resonant behavior accompanied by an S-shaped negative differential resistance region in the voltage–current characteristic. Current bistability is demonstrated, leading to bistability in the EL and laser generation spectra.     

A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3μm surface emitting laser diodes

A distributed Bragg reflector (DBR) utilizing the digital alloy Al_0.9Ga_0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al_0.9Ga_0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al_0.9Ga_0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.     

Calibration ofI(E) intov d(E) characteristics on h-shaped gunn devices for al x Ga1−x As alloys under hydrostatic pressure

The current-field characteristics for Al _x Ga_1−x As alloys under hydrostatic pressure have been calibrated into velocity-field characteristics using low field experimental data. The saturated drift velocity forx = 0.29 decreases from 7.8 × 10⁶ cm/s atP = 3.5 Kbar to 3.8 × 10⁶ cm/s atP = 8 Kbar. It is shown that the saturated velocity decreases from the value of 1.0 × 10⁷ cm/s in GaAs to about 3.8 × 10⁶ cm/s forx ≈ 0.39. The results should be useful in the design of high field devices of Al _x Ga_1−x As.     

Kinetics of indirect photoluminescence in GaAs/AlxGa1−x As double quantum wells in a random potential with a large amplitude

The kinetics of indirect photoluminescence of GaAs/Al_xGa_1−x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton) in magnetic fields B≤12 T at low temperatures T≥1.3 K is investigated. It is found that the indirect-recombination time increases with the magnetic field and decreases with increasing temperature. It is shown that the kinetics of indirect photoluminescence corresponds to single-exciton recombination in the presence of a random potential in the plane of the double quantum wells. The variation of the nonradiative recombination time is discussed in terms of the variation of the transport of indirect excitons to nonradiative recombination centers, and the variation of the radiative recombination time is discussed in terms of the variation of the population of optically active excitonic states and the localization radius of indirect excitons. The photoluminescence kinetics of indirect excitons, which is observed in the studied GaAs/Al_xGa_1−x As double quantum wells for which the random potential has a large amplitude, is qualitatively different from the photoluminescence kinetics of indirect excitons in AlAs/GaAs wells and GaAs/Al_xGa_1−x As double quantum wells with a random potential having a small amplitude. The temporal evolution of the photoluminescence spectra in the direct and indirect regimes is studied. It is shown that the evolution of the photoluminescence spectra corresponds to excitonic recombination in a random potential. Zh. éksp. Teor. Fiz. 115, 1890–1905 (May 1999)     

Magnetoexcitonic states in a quantum ring with the Winternitz-Smorodinsky confinement potential

We investigate magnetoexcitonic states in the Ga_{1−x 1}Al_{x 1}As/GaAs/Ga_{1−x 2}Al_{x 2} As quantum ring with the Winternitz-Smorodinsky confinement potential. A homogeneous magnetic field is directed perpendicularly to the ring plane. The Coulomb interaction between the electron and hole is assumed as weak and is considered in the framework of perturbation theory. Obtained results show that the more realistic Winternitz-Smorodinsky confinement potential, which takes into account a peculiar smoothing of the confinement potential profile, leads to raising of the electron energy levels as compared to the case of a finite-height rectangular confinement potential.     

Reverse engineering of Al<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>As/GaAs structures composition by reflectance spectroscopy

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial Al_xGa_−xAs/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in Al_xGa_1−xAs layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present experimental results of characterization of different AlGaAs structures to prove the potential of the worked out method.     

X-ray double-crystal rocking curves in GaAlAs/GaAs heterostructures

Summary X-ray double-crystal rocking curves of Ga_1−x Al _x As/GaAs heterostructures have been calculated using a dynamical diffraction model for the general case of Bragg reflection geometry. Different experimental configurations have been considered and the possibility of studying both slightly mismatched and relatively thin layers has been investigated. Experimental rocking curves have been measured using the CuKα ₁ radiation, the 004 symmetric reflection and a perfect crystal as the monochromator. An excellent agreement between calculated and experimental rocking curves has been found and this demonstrates the reliability of both the experimental procedure and the theoretical approach.     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures

Zeeman splitting of the ground state of single impurities in the quantum wells of resonant tunneling heterostructures is reported. We determine the absolute magnitude of the effective magnetic spin splitting factorg* for a single impurity in a 44 Å Al_0.27Ga_0.73As/GaAs/Al_0.27Ga_0.73As quantum well to be 0.28±0.02. This system also allows for independent measurement of the electron tunneling rates through the two potential barriers and estimation of the occupation probability of the impurity state in the quantum well.     

Effect of γ radiation from <Superscript>60</Superscript>Co on the formation of metal contacts to GaAs (Al<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As) structures

The properties of nonrectifying AuGe/GaAs (Al_0.4Ga_0.6As) contacts exposed to heat treatment, ⁶⁰Co γ radiation, and γ radiation combined with the application of an electrical bias are studied. A correlation between the type of interfacial interaction in the contacts and their resistance is found. Results obtained are explained in terms of a diffusion model with a movable boundary of the metal layer.     

Optics of excitons in systems with sharp heteroboundaries. Approximation of a strongly localized exciton wave function

Optical reflection spectra from a Ga_0.7Al_0.3As/GaAs heteroboundary are calculated using the approximation of a strongly localized exciton wave function. The calculation is based on electron Γ₆ and hole Γ₈ kp-Hamiltonians with position-dependent parameters. Fiz. Tverd. Tela (St. Petersburg) 40, 872–874 (May 1998)     

Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The interface of wet oxidized Al_0.97Ga_0.03As/GaAs in a distributed Bragg reflector (DBR) structure has been studied by means of transmission electron microscopy and Raman spectroscopy. With the extension of oxidation time, the oxide/GaAs interfaces are not abrupt any more. There is an amorphous film near the oxide/GaAs interface, which is Ga₂O₃ related to the prolonged heating. In the samples oxidized for 10 and 20 min, there are some fissures along the oxidized AlGaAs/GaAs interfaces. In the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products. PACS 68.55.Jk; 68.55.Nq; 68.65.+g; 81.65.Mq     

Picosecond luminescence of AlxGa1-xAs and GaAs double quantum well structures under high pressure

Abstract

The time-resolved luminescence of an electron-hole plasma in Al_0.36Ga_0.64As was studied as a function of pressure. Application of hydrostatic pressure varies the energy separation between the conduction band minima at Г and X. The dependence of the intensity ratio of the zero-phonon line and the two phonon replicas on this energy separation shows that scattering from X to Г by alloy disorder is as effective as scattering by phonons. We have further studied the tunneling of electrons between two GaAs quantum wells (QW) of different thicknesses through an Al_0.35Ga_0.65As barrier. The lifetime of electrons in the narrow QW, which is limitd by electron tunneling into the wider QW, stays constant from 0 to 2.4 GPa, where it drops within 0.1 GPa from 140 ps to less than 7 ps. At this pressure the X-point energy of the barrier coincides with the electron level in the wider QW. We infer that tunneling occurs only via the Г states in the barrier and that X states become effective only when real-state transfer is possible.     

Resonant tunneling of electrons between two-dimensional systems of different densities in a quantizing magnetic field

The results of experimental investigation of the vertical electron transport in a GaAs/Al_0.3Ga_0.7As/GaAs single-barrier tunneling heterostructure with a doped barrier are presented. Two-dimensional accumulation layers appear on different sides of the barrier as a result of the ionization of Si donors in the barrier layer. The nonmonotonic shift of the current peak is found in the I–V curve of the tunneling diode in a magnetic field perpendicular to the planes of two-dimensional layers. Such a behavior is shown to be successfully explained in the model of appearing the Coulomb pseudogap and the pinning of the spin-split Landau levels at the Fermi levels of the contacts. In this explanation, it is necessary to assume that the Landé factor is independent of the filling factors of the Landau levels and is g* = 7.5 for both layers.     

Mixing of excitonic states containing light and heavy holes in an isolated GaAs/AlGaAs quantum well in a magnetic field

The Zeeman splitting of the ground states 1s(hh) and 1s(lh) of excitons with heavy and light holes, respectively, in a 15-nm isolated Al_0.3Ga_0.7As/GaAs quantum well in magnetic fields of up to 20 T is investigated according to the photoluminescence excitation spectra in the Faraday geometry (σ⁺− σ⁻ components). The observed anomalous pattern of nonlinear Zeeman splitting and the nonmonotonic behavior of the effective hole g factor are interpreted in terms of the strong mixing of the magnetoexcitonic states containing light and heavy holes. Pis'ma Zh. éksp. Teor. Fiz. 64, No. 1, 52–56 (10 July 1996)