Systematic effects of carbon doping on the superconducting properties of Mg(B1-xCx)(2)

The upper critical field, H(c2), of Mg(B1-xCx)(2) has been measured in order to probe the maximum magnetic field range for superconductivity that can be attained by C doping. Carbon doped MgB2 filaments were prepared, and for carbon levels below 4% the transition temperatures are depressed by about 1 K/% C and H(c2)(T=0) rises by about 5 T/% C. This means that 3.8% C substitution will depress T(c) from 39.2 to 36.2 K and raise H(c2)(T=0) from 16.0 to 32.5 T. These rises in H(c2) are accompanied by a rise in resistivity at 40 K from about 0.5 to about 10 microOmega cm.     

Superconductivity in boron-doped diamond

Superconductivity of boron-doped diamond, reported recently at T(c)=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high T(c), leading to very large electron-phonon matrix elements. The calculated coupling strength lambda approximately 0.5 leads to T(c) in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T(c) somewhat, but the effects of three dimensionality primarily on the density of states keep doped diamond from having a T(c) closer to that of MgB2.     

纳米C和SiC掺杂对MgB2带材超导性能的影响

采用X射线衍射仪，扫描电镜，超导量子干涉仪等仪器对纳米C和SiC掺杂的MgB₂带材进行了表征，并采用标准四引线法对样品的临界电流进行了测试. 实验表明，C和SiC掺杂在提高MgB₂带材高场下的临界电流密度方面具有显著效果. 在温度为4.2 K、磁场大于9 T条件下，C和SiC掺杂样品的临界电流密度与未掺杂样品相比均提高一个数量级以上. 掺杂样品高磁场下良好的临界电流性能主要归因于C对B的替代所产生的晶格畸变、位错等缺陷和局部成分变化而导致的有效晶内钉扎作用. 实验结果表明，SiC掺杂的MgB2带材之所以具有非常好的高场电流特性，和C掺杂的样品一样， C对B的替代起到十分关键的作用. 关键词： 2带材')" href="#">MgB₂带材 C掺杂 SiC掺杂 临界电流性能     

Superconductivity at 38 K in the iron arsenide (Ba1-xKx)Fe2As2

The ternary iron arsenide BaFe2As2 becomes superconducting by hole doping, which was achieved by partial substitution of the barium site with potassium. We have discovered bulk superconductivity at T{c}=38 K in (Ba1-xKx)Fe2As2 with x approximately 0.4. The parent compound BaFe2As2 crystallizes in the tetragonal ThCr2Si2-type structure, which consists of (FeAs);{delta-} iron arsenide layers separated by Ba2+ ions. BaFe2As2 is a poor metal and exhibits a spin density wave anomaly at 140 K. By substituting Ba2+ for K+ ions we have introduced holes in the (FeAs);{-} layers, which suppress the anomaly and induce superconductivity. The T{c} of 38 K in (Ba0.6K0.4)Fe2As2 is the highest in hole doped iron arsenide superconductors so far. Therefore, we were able to expand this class of superconductors by oxygen-free compounds with the ThCr2Si2-type structure.     

原位法MgB_2-B_4C复相超导体合成及相含量调控研究

以B4C和Mg为原料合成的MgB2-B4C复相超导体具有高的临界电流密度(Jc)和高的超导转变温度(Tc),是一种有潜力的实用MgB2超导材料,其成相机理对复相MgB2超导体的相含量调控和磁通钉扎研究具有重要意义。结合经典烧结理论,研究了B4C-Mg真空固相烧结制备MgB2-B4C复相超导体的超导相形成和晶粒生长过程,给出了B4C-Mg的金斯特林格扩散模型和MgB2晶粒生长过程。通过选择B4C原料粒径,MgB2-B4C复相超导体超导相体积相含量在18%-88%范围可控。相含量88%的MgB2-B4C复相超导体临界转变温度达33.5K,转变宽度1.5K。10 K环境6T外场下电流密度可以达到1×104A/cm2,表明MgB2-B4C复相超导体具有良好的磁通钉扎行为。     

C掺杂MgB2超导线材的失超特性研究

研究了不同芯数(单芯、6芯和12芯)的C掺杂MgB2超导线材的失超特性.在制冷机环境(20K)下测量了C掺杂MgB2超导线材样品在自场下的最小触发能及失超传播速度.实验结果表明,失超传播速度随着工作电流的增大而线性增加.失超传播速度的大小跟测量位置有关,离触发区越近的传播速度越大.单芯样品的最小触发能最小,6芯和12芯线的最小触发能相差不大.最小触发能随工作电流的增加成指数形式衰减.     

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems.     

MgB2薄膜的制备与特殊性质

本文报道了利用混合物理化学气相沉积方法(HPCVD)在SiC衬底上制备出约150 nm厚,结构均匀的MgB2薄膜.由R~T曲线知道样品TC(0)高达40.1K.由M~T曲线知道其TC=40.4K,且曲线转变十分陡峭.X射线衍射分析表明薄膜具有较好的C轴取向,没有氧污染,却存在Mg的杂峰.由M~H曲线,利用毕恩模型计算得到了5 K零场条件下JC(0T,5K)=2.7×106A/cm2,Hc2=19.5 T.这些结果表明过量的Mg对MgB2薄膜的转变温度以及有些性质有较大的影响.     

Three-dimensional MgB2-type superconductivity in hole-doped diamond

We substantiate by numerical and analytical calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2, albeit in three dimensions. Holes at the top of the zone-centered, degenerate sigma-bonding valence-band couple strongly to the optical bond-stretching modes. The increase from two to three dimensions reduces the mode softening crucial for T(c) reaching 40 K in MgB2. Even if diamond had the same bare coupling constant as MgB2, which could be achieved with 10% doping, T(c) would be only 25 K. Superconductivity above 1 K in Si (Ge) requires hole doping beyond 5% (10%).     

Prediction of high T(c) superconductivity in hole-doped LiBC

The layered lithium borocarbide LiBC, isovalent with and structurally similar to the superconductor MgB2, is an insulator due to the modulation within the hexagonal layers (BC vs B2). We show that hole doping of LiBC results in Fermi surfaces of B-C p sigma character that couple very strongly to B-C bond stretching modes, precisely the features that lead to superconductivity at T(c) approximately equal to 40 K in MgB2. Comparison of Li(0.5)BC with MgB2 indicates the former to be a prime candidate for electron-phonon coupled superconductivity at substantially higher temperature than in MgB2.     

Low-temperature heat capacities and standard molar enthalpy of formation of 4-（2-aminoethyl）-phenol （C8H11NO）

This paper reports that low-temperature heat capacities of 4-（2-aminoethyl）-phenol （C8H11NO） are measured by a precision automated adiabatic calorimeter over the temperature range from 78 to 400 K. A polynomial equation of heat capacities as a function of the temperature was fitted by the least square method. Based on the fitted polynomial, the smoothed heat capacities and thermodynamic functions of the compound relative to the standard reference temperature 298.15K were calculated and tabulated at the interval of 5K. The energy equivalent, εcalor, of the oxygen-bomb combustion calorimeter has been determined from 0.68g of NIST 39i benzoic acid to be εcalor=（14674.69±17.49）J·K^-1. The constant-volume energy of combustion of the compound at T=298.15 K was measured by a precision oxygen-bomb combustion calorimeter to be ΔcU=-（32374.25±12.93）J·g^-1. The standard molar enthalpy of combustion for the compound was calculated to be ΔcHm = -（4445.47 ± 1.77） kJ·mol^-1 according to the definition of enthalpy of combustion and other thermodynamic principles. Finally, the standard molar enthalpy of formation of the compound was derived to be ΔfHm（C8H11NO, s）=-（274.68 ±2.06） kJ·mol^-1, in accordance with Hess law.     

Direct measurement of the Bose-Einstein condensation universality class in NiCl2-4SC(NH2)2 at ultralow temperatures

In this work, we demonstrate field-induced Bose-Einstein condensation (BEC) in the organic compound NiCl2-4SC(NH2)_{2} using ac susceptibility measurements down to 1 mK. The Ni S=1 spins exhibit 3D XY antiferromagnetism between a lower critical field H_{c1} approximately 2 T and a upper critical field H_{c2} approximately 12 T. The results show a power-law temperature dependence of the phase transition line H_{c1}(T)-H_{c1}(0)=aT;{alpha} with alpha=1.47+/-0.10 and H_{c1}(0)=2.053 T, consistent with the 3D BEC universality class. Near H_{c2}, a kink was found in the phase boundary at approximately 150 mK.     

The effects of C substitution and disorder on the field dependent critical current density in MgB2 with nano-SiC additions

In this work, nano sized SiC powders were mixed with Mg and B and reacted by either a one-step insitu or two-step method resulted in different level of C substitution. X-ray diffraction shows the presence of Mg₂Si signifying that the reaction between SiC and Mg occurred leading to the release of C in samples reacted in one-step method. Moreover, the much reduced value of a-axis indicates C substitution took place. Resistivity measurements showed higher intragrain scattering owing to a higher density of defects and/or impurities. These samples also show higher H_irr and H_c2 at 20 K in comparison to samples with mainly unreacted SiC (hence lower C substitution). More importantly, their J_c’s are more insensitive to high magnetic field (>4 T) at 6 K. However, at 20 K the effect of C content on J_c(H) is less pronounced. Finally, the order of magnitude of J_c(H) at both 6 K and 20 K is rather dominated by pinning.     

Superconducting Fe-based compounds (A1-xSrx)Fe2As2 with A=K and Cs with transition temperatures up to 37 K

New high-T{c} Fe-based superconducting compounds, AFe2As2 with A=K, Cs, K/Sr, and Cs/Sr, were synthesized. The T{c} of KFe2As2 and CsFe2As2 is 3.8 and 2.6 K, respectively, which rises with partial substitution of Sr for K and Cs and peaks at 37 K for 50%-60% Sr substitution, and the compounds enter a spin-density-wave state with increasing electron number (Sr content). The compounds represent p-type analogs of the n-doped rare-earth oxypnictide superconductors. Their electronic and structural behavior demonstrate the crucial role of the (Fe2As2) layers in the superconductivity of the Fe-based layered systems, and the special feature of having elemental A layers provides new avenues to superconductivity at higher T{c}.     

葡萄糖掺杂MgB_2块材超导电性研究

本文采用化学溶液法制备了在不同热处理条件下葡萄糖掺杂的MgB2块材样品.并对样品的晶体结构及超导电性进行了系统分析.X射线衍射结果表明掺杂样品a轴方向上的晶格参数减小,说明MgB2晶格中部分硼原子被葡萄糖分解后的活性碳原子所替代.此外,在两种不同烧结温度下,5wt%C6H12O6掺杂量对Tc都有较小的抑制,但不可逆场和高场下的载流能力得到了提高.在10K,5T下,掺杂样品的临界电流密度可达104A/cm2,比纯样Jc值大2～3倍,这表明掺杂样品的磁通钉扎性能得到了有效改善.     

Superconductivity of MgB 2 Thin Films Prepared By CoEvaporation and Magnetism of MgB 2 /Fe Multilayers Studied By Mössbauer Spectroscopy

MgB 2 thin films and MgB 2 /Fe multilayers have been prepared by vapor deposition of the elements in vacuum. X-ray diffraction studies of the MgB 2 samples show preferred c -axis growth along the film normal direction. Superconducting transition temperatures of 18 K and 22 K have been measured before and after annealing, respectively, of an MgB 2 film of 1575 Å thickness. Atomic force microscope images show island growth of the films leading to a rough surface. Mössbauer spectroscopy on MgB 2 /Fe/MgB 2 multilayers of various Fe layer thicknesses indicates superparamagnetic behavior. Evidence is provided for the formation of interfacial amorphous (a-) Fe 3 B. The magnetic ordering of Fe and a-Fe 3 B and the size effect in MgB 2 are assumed to be the cause for the destruction of the superconductivity in the as-grown multilayers.     

葡萄糖掺杂对MgB2钉扎机制的影响

本文通过磁性测量获得了葡萄糖掺杂MgB2块材样品的临界电流密度Jc,并利用集体钉扎模型分析了掺杂对其磁通钉扎机制的影响．研究发现,在纯样中δTc钉扎为主导钉扎机制;而在掺杂样品中,随着掺杂量的增加础钉扎所占比重逐渐增大到90％．剩余电阻率的计算结果也验证了掺杂样品中的钉扎机制变化．我们推断础钉扎主要是由碳对硼位掺杂引起...     

Metallurgical phases and their magnetism at the interface of nanoscale MgB2/Fe layered structures

We report on the characterization of metallurgical phases and their magnetism at the interfaces of nanoscale MgB(2)/Fe layered structures. MgB(2)/(57)Fe multilayers with varying layer thicknesses were prepared by vacuum deposition and investigated, before and after annealing by electrical resistance measurements, x-ray diffraction and (57)Fe conversion-electron M?ssbauer spectroscopy (CEMS) down to 5 K. Interfacial Fe-B phases, such as Fe(2)B, were identified by CEMS. A superparamagnetic-to-ferromagnetic transition is observed with increasing (57)Fe film thickness. Ultrahigh vacuum annealing at 500 °C of the multilayers leads to strong diffusion of Fe atoms into the boundary regions of the MgB(2) layers. MgB(2) in the as-grown multilayers is non-superconducting. Structural disorder and the effect of Fe interdiffusion contribute to the suppression of superconductivity in the MgB(2) films of all the as-grown multilayers and the thinner annealed multilayers. However, an annealed MgB(2)/(57)Fe/MgB(2) trilayer with thicker (500 ?) MgB(2) layers is observed to be superconducting with an onset temperature of 25 K. At 5 K, the annealed trilayer can be conceived as being strongly chemically modulated, consisting of two partially Fe-doped superconducting MgB(2) layers separated by an interdiffused weakly magnetic Fe-B interlayer, which is characterized by a low hyperfine magnetic field B(hf) of ～11 T. This chemically modulated layer structure of the trilayer after annealing was verified by Rutherford backscattering.     

High-resolution photoemission study of MgB2

We have performed high-resolution photoemission spectroscopy on MgB2 and observed opening of a superconducting gap with a narrow coherent peak. We found that the superconducting gap is s like with the gap value ( Delta) of 4.5+/-0.3 meV at 15 K. The temperature dependence (15-40 K) of the gap value follows well the BCS form, suggesting that 2Delta/k(B)T(c) at T = 0 is about 3. No pseudogap behavior is observed in the normal state. The present results strongly suggest that MgB2 is categorized into a phonon-mediated BCS superconductor in the weak-coupling regime.     

Anisotropy of the upper critical field in MgB<Subscript>2</Subscript>: The two-band Ginzburg-Landau theory

The temperature dependence of the anisotropy parameter of the upper critical field \(\gamma _{H_{c2} } (T) = H_{c2}^\parallel (T)/H_{c2}^ \bot (T)\) is calculated using the two-band Ginzburg-Landau theory for layered superconductors. It is shown that the anisotropy parameter γ(T) increases with decreasing temperature. The results of the calculations are in agreement with experimental data for single crystals of MgB₂ and with other calculations.