Superconductivity in boron-doped diamond

Superconductivity of boron-doped diamond, reported recently at T(c)=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high T(c), leading to very large electron-phonon matrix elements. The calculated coupling strength lambda approximately 0.5 leads to T(c) in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T(c) somewhat, but the effects of three dimensionality primarily on the density of states keep doped diamond from having a T(c) closer to that of MgB2.     

Systematic effects of carbon doping on the superconducting properties of Mg(B1-xCx)(2)

The upper critical field, H(c2), of Mg(B1-xCx)(2) has been measured in order to probe the maximum magnetic field range for superconductivity that can be attained by C doping. Carbon doped MgB2 filaments were prepared, and for carbon levels below 4% the transition temperatures are depressed by about 1 K/% C and H(c2)(T=0) rises by about 5 T/% C. This means that 3.8% C substitution will depress T(c) from 39.2 to 36.2 K and raise H(c2)(T=0) from 16.0 to 32.5 T. These rises in H(c2) are accompanied by a rise in resistivity at 40 K from about 0.5 to about 10 microOmega cm.     

Mechanism of enhancement in electromagnetic properties of MgB2 by Nano SiC doping

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.     

Prediction of high T(c) superconductivity in hole-doped LiBC

The layered lithium borocarbide LiBC, isovalent with and structurally similar to the superconductor MgB2, is an insulator due to the modulation within the hexagonal layers (BC vs B2). We show that hole doping of LiBC results in Fermi surfaces of B-C p sigma character that couple very strongly to B-C bond stretching modes, precisely the features that lead to superconductivity at T(c) approximately equal to 40 K in MgB2. Comparison of Li(0.5)BC with MgB2 indicates the former to be a prime candidate for electron-phonon coupled superconductivity at substantially higher temperature than in MgB2.     

Isotope and multiband effects in layered superconductors

In this review we consider three classes of superconductors, namely cuprate superconductors, MgB(2) and the new Fe based superconductors. All of these three systems are layered materials and multiband compounds. Their pairing mechanisms are under discussion with the exception of MgB(2), which is widely accepted to be a 'conventional' electron-phonon interaction mediated superconductor, but extending the Bardeen-Cooper-Schrieffer (BCS) theory to account for multiband effects. Cuprates and Fe based superconductors have higher superconducting transition temperatures and more complex structures. Superconductivity is doping dependent in these material classes unlike in MgB(2) which, as a pure compound, has the highest values of T(c) and a rapid suppression of superconductivity with doping takes place. In all three material classes isotope effects have been observed, including exotic ones in the cuprates, and controversial ones in the Fe based materials. Before the area of high-temperature superconductivity, isotope effects on T(c) were the signature for phonon mediated superconductivity-even when deviations from the BCS value to smaller values were observed. Since the discovery of high T(c) materials this is no longer evident since competing mechanisms might exist and other mediating pairing interactions are discussed which are of purely electronic origin. In this work we will compare the three different material classes and especially discuss the experimentally observed isotope effects of all three systems and present a rather general analysis of them. Furthermore, we will concentrate on multiband signatures which are not generally accepted in cuprates even though they are manifest in various experiments, the evidence for those in MgB(2), and indications for them in the Fe based compounds. Mostly we will consider experimental data, but when possible also discuss theoretical models which are suited to explain the data.     

High T(c) superconductivity in MgB2 by nonadiabatic pairing

The evidence for the key role of the sigma bands in the electronic properties of MgB2 points to the possibility of nonadiabatic effects in the superconductivity of these materials. These are governed by the small value of the Fermi energy due to the vicinity of the hole doping level to the top of the sigma bands. We show that the nonadiabatic theory leads to a coherent interpretation of T(c) = 39 K and the boron isotope coefficient alphaB = 0.30 without invoking very large couplings and it naturally explains the role of the disorder on T(c). It also leads to various specific predictions for the properties of MgB2 and for the material optimization of these types of compounds.     

预处理柠檬酸对MgB2块材掺杂的影响

本文介绍了预处理柠檬酸(C6H8O7)掺杂对MgB2超导体的影响.通过该实验我们将柠檬酸中的一部分氧元素除去,降低了样品中MgO的含量,从而有效减轻了杂质相对超导转变温度(Tc)的抑制.另外,还发现样品的临界电流密度(Jc)在处理温度为200℃时达到最优值.在10K,4T条件下,200℃预处理的样品的Jc达到1.4×1...     

Boron isotope effect in superconducting MgB2

We report the preparation method of and boron isotope effect for MgB2, a new binary intermetallic superconductor with a remarkably high superconducting transition temperature T(c)(10B) = 40.2 K. Measurements of both temperature dependent magnetization and specific heat reveal a 1.0 K shift in T(c) between Mg11B2 and Mg10B2. Whereas such a high transition temperature might imply exotic coupling mechanisms, the boron isotope effect in MgB2 is consistent with the material being a phonon-mediated BCS superconductor.     

原位法MgB_2-B_4C复相超导体合成及相含量调控研究

以B4C和Mg为原料合成的MgB2-B4C复相超导体具有高的临界电流密度(Jc)和高的超导转变温度(Tc),是一种有潜力的实用MgB2超导材料,其成相机理对复相MgB2超导体的相含量调控和磁通钉扎研究具有重要意义。结合经典烧结理论,研究了B4C-Mg真空固相烧结制备MgB2-B4C复相超导体的超导相形成和晶粒生长过程,给出了B4C-Mg的金斯特林格扩散模型和MgB2晶粒生长过程。通过选择B4C原料粒径,MgB2-B4C复相超导体超导相体积相含量在18%-88%范围可控。相含量88%的MgB2-B4C复相超导体临界转变温度达33.5K,转变宽度1.5K。10 K环境6T外场下电流密度可以达到1×104A/cm2,表明MgB2-B4C复相超导体具有良好的磁通钉扎行为。     

Superconductivity in dense MgB2 wires

MgB2 becomes superconducting just below 40 K. Whereas porous polycrystalline samples of MgB2 can be synthesized from boron powders, in this Letter we demonstrate that dense wires of MgB2 can be prepared by exposing boron filaments to Mg vapor. The resulting wires have a diameter of 160 microm, are better than 80% dense, and manifest the full chi = -1/4pi shielding in the superconducting state. Temperature-dependent resistivity measurements indicate that MgB2 is a highly conducting metal in the normal state with rho(40 K) = 0.38 microOmega cm. By using this value, an electronic mean-free path, l approximately 600 A can be estimated, indicating that MgB2 wires are well within the clean limit. Tc, Hc2(T), and Jc data indicate that MgB2 manifests comparable or better superconducting properties in dense wire form than it manifests as a sintered pellet.     

实用化MgB2超导材料研究进展

本文综述了实用化MgB2超导材料的最新研究进展．最新的理论和实验结果表明通过元素替代和掺杂，有希望进一步提高MgB2超导线带材的临界电流密度和磁通钉扎特性，完全可以达到实用化要求．目前MgB2超导磁体的制备技术研究已经开始，极有可能开发出采用闭路循环制冷机制冷的核磁共振成像仪（MRI）取代现在医学上使用的基于低温超导的核磁共振成像系统．     

Magneto-optical study of the superconducting gap of MgB(2) single crystals

We present magneto-optical reflectivity results in the basal plane of the hexagonal MgB(2). The data were collected on a mosaic of MgB(2) single crystals with T(c)=38 K from the ultraviolet down to the far infrared as a function of temperature and magnetic field oriented along the c axis. In the far infrared, there is a clear signature of the superconducting gap with a gap ratio 2 Delta/k(B)T(c) approximately 1.2, well below the weak-coupling value. The gap is suppressed in an external magnetic field, which is a function of temperature. We extract the upper critical field H(c2) along the c axis. The temperature dependence of H(c2) is compatible with the Helfand-Werthamer behavior.     

Metallurgical phases and their magnetism at the interface of nanoscale MgB2/Fe layered structures

We report on the characterization of metallurgical phases and their magnetism at the interfaces of nanoscale MgB(2)/Fe layered structures. MgB(2)/(57)Fe multilayers with varying layer thicknesses were prepared by vacuum deposition and investigated, before and after annealing by electrical resistance measurements, x-ray diffraction and (57)Fe conversion-electron M?ssbauer spectroscopy (CEMS) down to 5 K. Interfacial Fe-B phases, such as Fe(2)B, were identified by CEMS. A superparamagnetic-to-ferromagnetic transition is observed with increasing (57)Fe film thickness. Ultrahigh vacuum annealing at 500 °C of the multilayers leads to strong diffusion of Fe atoms into the boundary regions of the MgB(2) layers. MgB(2) in the as-grown multilayers is non-superconducting. Structural disorder and the effect of Fe interdiffusion contribute to the suppression of superconductivity in the MgB(2) films of all the as-grown multilayers and the thinner annealed multilayers. However, an annealed MgB(2)/(57)Fe/MgB(2) trilayer with thicker (500 ?) MgB(2) layers is observed to be superconducting with an onset temperature of 25 K. At 5 K, the annealed trilayer can be conceived as being strongly chemically modulated, consisting of two partially Fe-doped superconducting MgB(2) layers separated by an interdiffused weakly magnetic Fe-B interlayer, which is characterized by a low hyperfine magnetic field B(hf) of ～11 T. This chemically modulated layer structure of the trilayer after annealing was verified by Rutherford backscattering.     

硬度和电负性对掺杂二硼化镁体系临界电流密度的影响

依据Slater过渡态计算法计算出的元素的硬度和电负性作为标度,通过对二硼化镁及掺杂二硼化镁超导体硬度和电负性的计算,研究了二硼化镁及掺杂二硼化镁超导体硬度和电负性与临界电流密度的关系,发现其具有较好的规律性。由此,提出用硬度均衡值ηcq和电负性的平均效应值cχq作为提高掺杂二硼化镁超导体临界电流密度的一个新依据,对今后二硼化镁超导电性的改善有很好的指导意义。     

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems.     

Band filling and interband scattering effects in MgB2: carbon versus aluminum doping

We argue, based on band structure calculations and the Eliashberg theory, that the observed decrease of T(c) of Al and C doped MgB2 samples can be understood mainly in terms of a band filling effect due to the electron doping by Al and C. A simple scaling of the electron-phonon coupling constant lambda by the variation of the density of states as a function of electron doping is sufficient to capture the experimentally observed behavior. Further, we also explain the long standing open question of the experimental observation of a nearly constant pi gap as a function of doping by a compensation of the effect of band filling and interband scattering. Both effects together generate a nearly constant pi gap and shift the merging point of both gaps to higher doping concentrations, resolving the discrepancy between experiment and theoretical predictions based on interband scattering only.     

Two- to three-dimensional crossover in the electronic structure of (Bi, Pb)2(Sr, La)2CuO(6+delta) from angle-resolved photoemission spectroscopy

The hole-concentration (x) dependence of the three-dimensional energy-momentum dispersion in (Bi, Pb)2(Sr, La)2CuO(6+delta) has been investigated by angle-resolved photoemission spectroscopy. For a heavily overdoped sample of T(c) < or = 0.5 K, an energy dispersion of approximately 10 meV in width is observed in the vicinity of the (pi, 0) point with varying momentum along the c axis (k(z)). This k(z) dispersion is zero for underdoped, optimally doped, and slightly overdoped samples up to a doping level corresponding to T(c) = 22 k. At higher doping levels we observe significant dispersion of the order of 10 meV (sample with T(c) < or = 0.5 K). This is clear evidence that at a doping value corresponding to T(c) = 22 K, a crossover from two- to three-dimensional electronic structure occurs.     

新型超导体二硼化镁(MgB_2)基础研究及其应用展望

文章简要介绍了新型超导体二硼化镁的发现、研究进展和应用前景 .理论和实验都已经证明 ,二硼化镁的超导电性来源于电声子耦合 ,可以用具有S -波对称性波函数的BCS图像来描述 .然而在二硼化镁超导体中 ,人们发现有两个超导能隙 ,一个在 6meV ,另外一个在 2meV左右 ,它们同时在超导转变温度处打开 ,这给超导机理研究带来了一些新的内容 .在混合态物理方面 ,人们发现超导与正常态的边界线 (上临界磁场Hc2 )与磁通融化线(不可逆线Hirr)之间有很大的间隙 ,即使在绝对零度时也是如此 ,作者提出这可能是由于双能隙的结果或磁通物质的量子融化 .在应用方面 ,最有可能把它做成超导磁体 ,利用闭路循环制冷机制冷在 2 0K左右使用 ,这样极有可能取代现在医学上使用的核磁共振成像的液氦温度超导磁体     

High-resolution photoemission study of MgB2

We have performed high-resolution photoemission spectroscopy on MgB2 and observed opening of a superconducting gap with a narrow coherent peak. We found that the superconducting gap is s like with the gap value ( Delta) of 4.5+/-0.3 meV at 15 K. The temperature dependence (15-40 K) of the gap value follows well the BCS form, suggesting that 2Delta/k(B)T(c) at T = 0 is about 3. No pseudogap behavior is observed in the normal state. The present results strongly suggest that MgB2 is categorized into a phonon-mediated BCS superconductor in the weak-coupling regime.     

(Ce,Gd,Mn)MgB5O10磷光体的合成及其发光

本文采用固相反应的方法合成了一系列(Ce,Gd,Mn)MgB5O10磷光体。观察到合成温度、灼烧时间、原料配比对磷光体的形成和发光亮度有重要影响。X射线衍射分析表明,磷光体结构与LaMgB5O10相同,属单斜晶系、空间群P21/c。用EPR确定了磷光体中锰离子为二价。测定了(Ce0.2La0.2)MgB5O10,(Gd0.7La0.3)MgB5O10,(Mn0.05La0.95)MgB5O10,(Ce0.2Mn0.05La0.75)MgB5O10,(Gd0.95Mn0.05)MgB5O10、(Ce0.2Gd0.8)MgB5O10和(Ce0.2Gd0.75Mn0.05)MgB5O15等磷光体的光谱。根据光谱数据讨论了(Ce0.2Gd0.75Mn0.05)MgB5O10磷光体中能量传递过程为:Ce3+→Mn2+,Gd3+→Mn2+以及Ce3+→Gd3+→Mn2+,其中Ce3+离子可将能量高效地传递给Gd3+,Gd3+离子起着中间体的作用。