Ultrasonic and viscometric studies of molecular interactions in binary mixtures of formamide with ethanol, 1-propanol, 1,2-ethanediol and 1,2-propanediol at different temperatures

The ultrasonic speeds, u and viscosities, η of binary mixtures of formamide (FA) with ethanol, 1-propanol, 1,2-ethanediol, and 1,2-propanediol, including those of pure liquids, over the entire composition range were measured at 293.15, 298.15, 303.15, 308.15, 313.15, and 318.15 K. From the experimental values of u and η, the deviations in isentropic compressibility, Δk_s, in ultrasonic speed, Δu, and in viscosity, Δη were calculated. The variation of these parameters with composition and temperature of the mixtures are discussed in terms of molecular interaction in these mixtures. The observed trends in Δk_s values indicate the presence of specific interactions between FA and alkanol molecules. The Δk_s values follow the order: ethanol < 1-propanol < 1,2-propanediol < 1,2-ethanediol. It is observed that the Δk_s values depend upon the number of hydroxyl groups and alkyl chain length in these alkanol molecules. Furthermore, the free energies, ΔG, enthalpies, ΔH and entropies, ΔS of activation of viscous flow have also been obtained by using Eyring viscosity equation and their dependence on composition of the mixtures have been discussed.     

UV-induced two-photon absorption in BiB3O6 single crystals

We show that BiB₃O₆ (BiBO) crystals, well known for their excellent second harmonic generation (SHG) properties, may also be of interest for third-order optical phenomena, particularly for two-photon absorption (TPA). Photoinduced TPA measurements were performed under illumination of excimer Xe–F laser (λ = 217 nm) as a photoinducing (pumping) beam. It created a thin surface layer (about 85 nm) that was a source of the observed photoinduced TPA. Raman shifted Nd-YAG laser radiation (λ = 1.9 μm) as well as its second and fourth harmonics (λ = 950 and λ = 475 nm, respectively) were used as fundamental (probing) beams of the TPA. The highest values of the TPA β coefficient were achieved for a polarization of the pumping light directed along crystallographic axis b. Quantum chemical simulations indicate on substantial contribution of UV-induced electron–phonon anharmonicity to the observed TPA. The obtained values of TPA coefficients indicate a possibility of using BiBO crystals as UV-operated optical limiters in a wide spectral range.     

Magnetic moment of the Δ (1232) resonance

The reaction γp → π^°γ′p has been measured with the TAPS BaF₂ calorimeter at the Mainz Microtron accelerator facility MAMI for energies between √2 = 1221–1331 MeV. Cross sections differential in angle and energy have been determined for the photon γ′ in three bins of the excitation energy. This reaction channel provides access to the magnetic dipole moment of the Δ⁺(1232) resonance and, for the first time, a value of μ_Δ+ = (2.7^+1.0_−1.3(stat) ± 1.5(syst) ± (theor)) π_N has been extracted.     

Scaling behavior of mixed-state hall effect in MgB2 thin films

The Hall resistivity (ρ_xy) and the longitudinal resistivity (ρ_xx) in c-axis-oriented superconducting MgB₂ thin films have been investigated in extended fields up to 18 T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18 T and a wide temperature region from 10 to 28 K, a universal power law with β = 2.0 ± 0.1 was observed in c-axis-oriented MgB₂ thin films. These results can be well interpreted by using recent models.     

Molecular associations in binary mixtures of pyridine and chlorobenzene in benzene solution using microwave absorption data

The dielectric relaxation time (τ) of binary mixtures of different molar concentrations of pyridine (C₅H₅N) and chlorobenzene (C₆H₅Cl) in benzene solution at different temperatures (25, 30, 35 and 40 °C) has been calculated by using standard microwave techniques and Gopala Krishna's single frequency (9.875 GHz) concentration variation method. The energy parameters (ΔH_ε, ΔF_ε, and ΔS_ε) for the dielectric relaxation process of the binary mixture containing 0.5 mol fraction of pyridine have been calculated at the respective temperatures. Comparisons have been made with the corresponding energy parameters for the viscous flow (ΔH_η, ΔF_η, and ΔS_η). From the observations it is found that the dielectric relaxation process can be treated as the rate process. Based upon above studies, solute–solvent type of molecular associations arising from the interaction of chlorobenzene and benzene and pyridine and benzene molecules has been proposed. No solute–solute type of molecular association has been observed.     

Transport properties of SrCe0.95Y0.05O3−δ and its application for hydrogen separation

Transport properties of SrCe_0.95Y_0.05O_3−δ were studied by impedance spectroscopy and by measuring open-cell voltage (OCV) and gas permeation. Ionic transference numbers were determined by measuring the OCV of concentration cells and water vapor evolution of an O₂/H₂ fuel cell. We observed interfacial polarization on the basis of the I–V curves obtained by discharging a hydrogen concentration cell or an O₂/H₂ fuel cell. The observed high protonic conductivity (high proton and low oxide ion transference numbers) makes SrCe_0.95Y_0.05O_3−δ a potential material for hydrogen separation. From proton conductivity measurements, under a given hydrogen partial pressure difference of 4%/0.488%, the hydrogen permeation rate (of a dense membrane with 0.11 cm in thickness) was calculated to be ≈0.072 cm³ (STP) cm⁻² min⁻¹ at 800°C, whereas the permeation rate calculated from short-circuit current measurements was ≈0.023 cm³ (STP) cm⁻² min⁻¹ at 800°C. The difference between calculated and observed permeation rates is probably due to interfacial polarization.     

Pressure–temperature studies on conductivity of TlX(X=Cl,Br,I) compounds:: I: phase diagram. II: ionic mobility

We have measured the conductivity σ of TlX(X=Cl, Br, I) compounds up to 5.3 GPa and between 300–823 K. The σ–T dependence for all compounds can be divided into three distinct regions: (i) low temperature (LT), <400 K, with unusual negative σ–T dependence, (ii) intermediate temperature (IT), 400<650 K, with positive σ–T dependence and (iii) high temperature (HT), T>650 K, with positive σ–T dependence. The σ–T isobars were used to construct the T–P solid phase diagram for each compound. The LT region data indicate a new meta-stable phase in the 1.0–3.5 GPa range. The LT→IT transition is characterized by an inverse σ–T dependence followed by normal Arrhenius behavior up to and including the HT region. The extrapolation to 1 atm of the P-dependent boundary between IT and HT regions above 3 GPa for each compound in the P–T plot yields a value close to its respective normal (1 atm) T_melt suggesting a solid order–disorder transition type paralleling -AgI behavior. The abrupt drop in conductivity in the LT region for P between 2.5–4.1 GPa of all compounds is at variance with the Arrhenius behavior observed for unperturbed ion migration implying the appearance of a second factor overriding the Arrhenius temperature dependence. Normal Arrhenius σ–T dependence prevails in both IT and HT regions with Q_c values of 85–100 kJ mol⁻¹ and 50–75 kJ mol⁻¹, respectively. The higher conductivities at 0.4 GPa for TlBr and TlI relative to their 1 atm data and the increasing σ with P are in strong contrast to the normal σ-P behavior of TlCl. The dependence of activation volume ΔV^‡ on T for TlCl, i.e. ΔV^‡>0, shows abnormally high values with a maximum at 500 K for P<3.0 GPa but reasonable ΔV^‡ values appear above 3.0 GPa. The ΔV^‡–T dependence for both TlBr and TlI with ΔV^‡<0 is incompatible with an ion transport mechanism suggesting an electronic conduction process and implying an ionic–metallic transition at higher pressures. These contrasting conductivity features are discussed and interpreted in terms of electronegativity differences and bonding character rather than structure.     

Ferromagnetic Zr1−xMnxCo2 laves phase compounds

Structure and magnetic properties of the Zr_1−xMn_xCo_2+δ alloys were studied for 0 x <0.7, δ=0, 0.45. The cubic C15 Laves phase structure shows Mn solubility up to x≈0.4. The other Laves phase with the hexagonal C36 structure found for x0.5 apparently has a small region of Mn solubility in the vicinity of Zr_0.4Mn_0.6Co₂. Though the parent Mn-free compounds are known to be paramagnetic, the Mn-substituted alloys show ferromagnetic behavior with the Curie temperatures up to 625 K and the room-temperature saturation magnetization of about 100 emu/g. The onset of ferromagnetism with the Mn substitution for Zr may be caused by polarization of itinerant 3d electrons, like it was earlier supposed for the off-stoichiometric ZrCo_2+δ. The universal composition dependencies of the intrinsic magnetic properties for different δ can be obtained, if plotted against the amount of zirconium atoms missing in its sublattice. The room-temperature anisotropy with the noticeable anisotropy field of 24 kOe and the 1 1 0 easy magnetization direction laying in a basal plane was found in the hexagonal Zr_0.5Mn_0.5Co₂.     

Crosstalk between two-photon and two-color (two-photon) excitation in optical beam induced current generation with two confocal excitation beams

We analyze the influence of residual two-photon excitation (2PE) in two-color (two-photon) optical beam induced current (2CE-OBIC) generation in wide band gap semiconductor samples. 2CE-OBIC generation is accomplished with two confocal excitation beams of separation angle θ and wavelengths λ₁ and λ₂ where , λ_e = hc/E_b, h is the Planck’s constant, c is speed of light in vacuum, and E_b is the energy band gap. Because the conduction band of the sample is a continuum, at least one excitation beam would also contribute an undesirable 2PE-OBIC signal that degrades the signal-to-noise ratio of the measured 2CE-OBIC response and broadens the effective OBIC distribution in the sample particularly when θ ≠ 0 or π. We show that the deleterious effects of crosstalk are reduced by a careful selection of λ₁ and λ₂ and the relative excitation beam intensities. λ₁ and λ₂ should be chosen to minimize the ratio of the two-photon absorption coefficients (β₁, β₂) to the 2CE absorption coefficient β₁₂ or at least satisfy the constraint: β₁ + β₂  β₁₂. Keeping the two excitation intensities equal is beneficial only when β₁ = β₂. Otherwise, it is advantageous to bias the intensity ratio towards the wavelength with a lower 2PE absorption coefficient.     

Experimental analysis of true left-handed behaviour and transmission properties of composite metamaterials

We report the true left-handed transmission of a composite metamaterial (CMM) consisting of periodically stacked split-ring resonator (SRR) and wire elements. The negative permeability (μ < 0) gap is demonstrated explicitly by comparing SRR and closed-ring resonator structures. We confirm experimentally that the plasma cut-off frequency of the CMM is determined by the combined dielectric response of SRR and wire elements, and it is much lower than that of the wire-only medium. This is crucial to identify the left-handed transmission bands of the CMM. We further investigate the effect of intralayer and interlayer disorder on the transmission spectrum of CMM arising from misaligned fabrication and stacking of the SRR layers. We found that the intralayer disorder affects the μ < 0 gap of SRRs and the left-handed transmission band of CMM significantly, whereas the SRR transmission is rather immune to interlayer disorder.     

Quantum critical point, scaling and universality in high Tc(CaxLa1−x)(Ba2−c−xLac+x)Cu3Oy

Using charge transport in sintered ceramic samples it is observed that at all doping, including non superconducting overdoped samples, there exists a temperature in which below it dR/dT < 0. This suggests that either the quantum critical point is not necessarily inside the superconducting dome or that the CuO₂ plane is never overdoped. Data relating experimental Cooper pair density, conductivity and T_c suggest that Homes’ relation might need a more specific definition of the conductivity σ.     

Aspects of “low field” magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO₃ were grown on an (0 0 1) SrTiO₃ (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (0 0 1) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [1 0 0]_S and [0 0 1]_S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [0 0 1]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ₀H=9 T; T)−ρ( μ₀H=0 T; T)]/ρ( μ₀H=0 T; T) on the order of a few percent, with maximums of 6% and 4% (right at the Curie temperature, T_C 160 K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T<30 K) are similar to those obtained on SrRuO₃ films grown on 2° miscut (0 0 1) STO substrates with the current parallel to the field and parallel to the direction, which was identified as the easier axis for magnetization.     

Thermodynamics of mixtures containing alkoxyethanols. Part XXV. Densities, excess molar volumes and speeds of sound at 293.15, 298.15 and 303.15 K, and isothermal compressibilities at 298.15 K for 2-alkoxyethanol + 1-butanol systems

Densities, ρ, and speeds of sound, u, of systems formed by 2-methoxyethanol (2ME), 2-ethoxyethanol (2EE), 2-propoxyethanol (2PE), or 2-butoxyethanol (2BE) and 1-butanol have been measured at 293.15, 298.15 and 303.15 K and atmospheric pressure using a vibrating tube densimeter and sound analyser Anton Paar model DSA-5000. The ρ and u values were used to calculate excess molar volumes, V^E, at those temperatures and deviations from the ideal behaviour of the thermal expansion coefficient, Δ_P, or of the isentropic and isothermal compressibilities, Δκ_S and Δκ_T at 298.15 K. From the data, it is apparent that the interactional contribution to V^E is more important for systems with 2ME or 2EE, while structural effects are more relevant in the 2PE or 2BE mixtures, and that dipolar interactions decrease with the size of the 2-alkoxyethanol. Several methods are applied to predict speeds of sound: free length theory (FLT), collision factor theory (CFT), and Nomoto, Junjie and Van Dael equations. CFT and Nomoto's equation provide the better predictions. Finally, 1-butanol + 2-alkoxyethanol, or + 2-(2-alkoxyethoxy)ethanol mixtures have been studied using ERAS. Poorer results were obtained for systems including 2-(2-alkoxyethoxy)ethanols, which may be due to dipolar interactions and structural effects are more important in such solutions.     

Renormalization group invariant matrix elements of ΔS=2 and ΔI=3/2 four-fermion operators without quark masses

We introduce a new parameterization of four-fermion operator matrix elements which does not involve quark masses and thus allows a reduction of systematic uncertainties. In order to simplify the matching between lattice and continuum renormalization schemes, we express our results in terms of renormalization group invariant B-parameters which are renormalization-scheme and scale independent. As an application of our proposal, matrix elements of ΔI=3/2 and SUSY ΔS=2 operators have been computed. The calculations have been performed using the tree-level improved Clover lattice action at two different values of the strong coupling constant (β=6/g²=6.0 and 6.2), in the quenched approximation. Renormalization constants and mixing coefficients of lattice operators have been obtained non-perturbatively. Using lowest order χPT, we also obtain ππ|O₇|K^NDR_I=2=(0.11±0.02) GeV⁴ and ππ|O₈|K^NDR_I=2=(0.51±0.05) GeV⁴ at μ=2 GeV.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Ionic conduction in dilute pseudo-binary systems CuBr–Cu2Se

Ionic conductivity, σ_i, of dilute pseudobinary alloys (CuBr)_1−x(Cu₂Se)_x (x≤0.1) in their γ-phase has been measured by an ac method. The increase of the ionic conductivity propertional to x has been observed, which is attributed to interstitial ions brought by Cu₂Se dissolved in CuBr. It is found that the temperature dependence of mobility of interstitial ions, μ, evaluated by the relation Δσ_i/x=kμ (k is a constant) is bent at the temperature corresponding to the extrinsic–intrinsic transition of the based material CuBr.     

Characterization of heterogeneous interaction in binary mixtures of ethylene glycol oligomer with water, ethyl alcohol and dioxane by dielectric analysis

The associating behaviour of the binary mixtures of ethylene glycol oligomer (EGO), i.e. ethylene glycol (EG), diethylene glycol (DEG) and poly(ethylene glycol)s (PEG200, PEG300, PEG400 and PEG600) with water (W), ethyl alcohol (EA) and 1,4-dioxane (DX) over the entire concentration range at 25 °C have been investigated through their accurately measured values of dielectric constant. The static dielectric constant ε_o, high frequency limiting dielectric constant ε_∞, dielectric relaxation strength Δε, excess dielectric parameters ε^E₀ and ε^E_∞, effective Kirkwood correlation factor g^eff and corrective correlation factor g_f of EGO–W, EGO–EA and EGO–DX mixtures were determined to obtain qualitative and quantitative information about the complex formation through H-bond in these systems. Most of the evaluated dielectric parameters of EG and DEG in different ‘cosolvents’ have different characteristics as compared to the PEG–cosolvent mixture. The observed linear and non-linear behaviour of Δε against EGO monomer unit mole fraction X confirms the variation in the homogeneous structures in their binary mixtures with concentration variation. Appearance of the maximum in ε^E₀ against X plots indicates that a complex stable adduct is formed in the EGO–W mixtures at stoichiometric ratio 1:1.7 for lower oligomers but this ratio seems to be 1.7:1 for higher EGO molecules, which confirms that the EGO size and chain flexibility affects the complex formation between EGO and W. In case of EG–EA mixture 1:1 stoichiometric ratio form stable adduct whereas for higher EGO–EA, it is 3:1, at EGO monomer unit level. The complex formation behaviour of DEG–EA has entirely different characteristics when compared to the other studied EGO–EA mixtures. Although, 1,4-dioxane has weak polar behaviour dielectric properties of EG–DX and DEG–DX confirm the formation of stable adducts at the stoichiometric ratio 2:1 of EGO monomer unit mole fraction to the DX. For the higher EGO–DX mixtures, stable adduct forms at the stoichiometric ratio 9:1. Except DEG–EA mixtures, the EGO–W and EGO–EA form the complex with reduction in the effective number of dipoles. In EG–DX mixtures, the heterogeneous species form with a large reduction in the effective number of dipoles, which changes as the effective number of dipoles increases with the increase in monomer repeat units of EGO. Further the net electronic polarization in these binary mixtures increases due to heterogeneous interaction over the entire mixing concentration range.     

The dependence of I–V and C–V characteristics on temperature in the H-terminated Pb/p-Si(1 0 0) Schottky barrier diodes

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of H-terminated Pb/p-Si/Al contacts fabricated by us have been measured in the temperature range of 77–300 K. The experimental values of the barrier height (BH) Φ_bo and the ideality factor n for the device range from 0.674 and 1.072 eV (at 300 K) to 0.352 and 2.452 eV (at 77 K), respectively. The ideality factors become larger with lowering temperature while the barrier height decreases. The Φ_bo(n) plot shows a linear dependence in the temperature range of 77–300 K that can be explained by the barrier inhomogeneity at the metal/semiconductor interface. The extrapolation of the linear Φ_bo(n) plot to n = 1 has given a homogeneous barrier height of approximately 0.713 eV for the Pb/p-Si(1 0 0) contact. A Φ_bo versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of and σ_s = 80.5 mV for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified versus 1/T plot gives and A^* as 0.828 eV and 54.89 A/cm² K², respectively. Furthermore, an average value of −0.687 meV/K for the temperature coefficient has been obtained, the value of −0.687 meV/K for hydrogen terminated p-type Si differs from those given for p-type Si without hydrogen termination in the literature.     

Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step

Low-temperature step-graded high indium content InAlAs (In% = 0.75) metamorphic buffer layers with reverse step layer grown on GaAs substrate by molecular beam epitaxy are investigated in this paper. The composition and the strain relaxation of the top InAlAs layer are determined by high-resolution triple-axis X-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed and the growth parameters for these samples have little influence on the strain relaxation ratio. Surface morphology is observed by reflection high-energy electron diffraction pattern and atomic force microscopy. The surface morphology is found to depend strongly on both the growth temperature and the As flux. Compared with other samples, the sample growth under the optimized conditions has the smallest value of root mean square surface roughness. Furthermore, the ω − 2θ and ω scans of the triple-axis X-ray diffraction and transmission electron microscopy result also show the sample grown under the optimized conditions has good crystalline quality.