Dynamical spin susceptibility of the d–p model in the over doping region

Dynamical spin susceptibility χ^s(q,ω) of the d–p model in the over doping region is investigated by using the auxiliary boson technique. It includes higher order terms of the 1/N-expansion within the random phase approximation (RPA) of the local vertex, where frequency dependence of the quasi-particle interaction is taken into account. The incommensurate spin fluctuation is obtained due to the nesting effect in the low energy region (ωω^*), whereas the commensurate one in the high energy region (ωω^*), the characteristic energy ω^* is estimated to be about 30 meV. Both of the spin–lattice relaxation rate 1/T₁ and the spin–spin relaxation rate 1/T_g monotonically increase as T decreases, while the spin Knight shift K is almost independent of T.     

On the luminescence of LiBaF3:Eu

From the temperature dependence of the line—band luminescence intensity ratio of LiBaF₃:Eu²⁺ a 4f−5d activation energy (Δ) of 800 cm⁻¹ is derived, being much higher than the value reported in the literature (100 cm⁻¹). The temperature dependence of the luminescence decay can be well described with Δ = 800 cm⁻¹ and with 4f−4f and 5d−4f radiative probabilities of 4×10²s⁻¹ and 6×10⁵s⁻¹, respectively.     

Description peculiarities of viscous and elastic properties of dense molecular liquids on the basis of the model of Lennard-Jones (n−6) fluid

Results previously obtained in molecular dynamics experiment with Lennard-Jones (n−6) (L-J (n−6)) fluid were applied for the determination of viscous and elastic properties of real molecular fluids (shear viscosity coefficient and pressure). Parameters σ and of real liquids (liquid hydrocarbons) were determined by fitting p–ρ–T data of model fluids to experimental p–ρ–T data of real liquids. Using the data obtained in that way, parameters σ and viscous and elastic characteristics of real liquids were determined. The comparison of experimental and calculated viscous and elastic characteristics revealed lesser dependence of viscous properties from n in comparison with elastic properties.     

Characterization of metal/GaN Schottky interfaces based on I–V–T characteristics

Interface properties of metal/n- and p-GaN Schottky diodes are studied by I–V–T and C–V–T measurements, and simulation of their characteristics. On the basis of the previously proposed “surface patch” model, the gross behavior of I–V–T characteristics, which includes Richardson plots together with temperature dependence of the effective Schottky barrier heights (SBHs) and n-values, can be well reproduced. Furthermore, the dependence of the true SBH on the metal work function was also deduced from high-temperature I–V curves, giving S-values of 0.28 and 0.20 for n- and p-GaN samples, respectively, and the interface Fermi level tends to be pinned at a characteristic energy of about two-third of the bandgap.     

Study of activation parameters and NMR spin-lattice relaxation time in some substituted amines

The present communication reports the experimental values of NMR spin-lattice relaxation time (T₁) and dielectric relaxation time (τ) of piperidine, pyrrole, pyridine, diethylamine, triethylamine and pyrrolidine. The values of activation energy (ΔE_A) obtained using dielectric relaxation time, have been correlated with calculated values of ΔE_A obtained using Arrhenius equation of NMR relaxation time (T₁) for pyridine, diethylamine and pyrrole. Authors have also established a correlation between the experimental values of NMR spin-relaxation time (T₁) with its calculated values obtained using different equations of dielectric relaxation time (τ).     

The dependence of I–V and C–V characteristics on temperature in the H-terminated Pb/p-Si(1 0 0) Schottky barrier diodes

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of H-terminated Pb/p-Si/Al contacts fabricated by us have been measured in the temperature range of 77–300 K. The experimental values of the barrier height (BH) Φ_bo and the ideality factor n for the device range from 0.674 and 1.072 eV (at 300 K) to 0.352 and 2.452 eV (at 77 K), respectively. The ideality factors become larger with lowering temperature while the barrier height decreases. The Φ_bo(n) plot shows a linear dependence in the temperature range of 77–300 K that can be explained by the barrier inhomogeneity at the metal/semiconductor interface. The extrapolation of the linear Φ_bo(n) plot to n = 1 has given a homogeneous barrier height of approximately 0.713 eV for the Pb/p-Si(1 0 0) contact. A Φ_bo versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of and σ_s = 80.5 mV for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified versus 1/T plot gives and A^* as 0.828 eV and 54.89 A/cm² K², respectively. Furthermore, an average value of −0.687 meV/K for the temperature coefficient has been obtained, the value of −0.687 meV/K for hydrogen terminated p-type Si differs from those given for p-type Si without hydrogen termination in the literature.     

Ionic conduction in dilute pseudo-binary systems CuBr–Cu2Se

Ionic conductivity, σ_i, of dilute pseudobinary alloys (CuBr)_1−x(Cu₂Se)_x (x≤0.1) in their γ-phase has been measured by an ac method. The increase of the ionic conductivity propertional to x has been observed, which is attributed to interstitial ions brought by Cu₂Se dissolved in CuBr. It is found that the temperature dependence of mobility of interstitial ions, μ, evaluated by the relation Δσ_i/x=kμ (k is a constant) is bent at the temperature corresponding to the extrinsic–intrinsic transition of the based material CuBr.     

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

The current–voltage (I–V) characteristics of Au/polyaniline(PANI)/p-Si/Al structures were determined at various temperatures in the range of 90–300 K. The evaluation of the experimental I–V data reveals a decrease of the zero-bias barrier height (BH) and an increase of the ideality factor (n) with decreasing temperature. It was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH, increase of the ideality factor n due to barrier height imhomogeneities that prevail at the interface. A Φ_b0 versus 1/T plot has been drawn for evidence of the Gaussian distribution of the barrier height, and and σ₀ = 0.0943 V for the mean barrier height and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, a modified versus 1/T plot gives and A^* as 0.885 eV and A^* = 55.80 A/K² cm², respectively. Hence, it can be concluded that Au/PANI/p-Si/Al structure has a good rectifying contact and the temperature dependence of I–V characteristics of the rectifying contact on p-Si successfully have been explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.     

Charge susceptibility and charge correlation function in the d---p model

The properties of the charge fluctuation are investigated in the d---p model with the repulsion U_pd between holes on the nearest-neighbor Cu and O sites and the infinite on-site repulsion U_d at the Cu site. We calculate the charge susceptibility χ^c(q, iω_n) and the charge correlation function S^c(q) = TΣ_ωn χ^c(q, iω_n). It is found that S^c(q) has a peak at the Γ point and a maximum in a ring around the Γ point. The former is due to Tχ^c(q, 0). Its intensity is proportional to temperature T and strongly enhanced by U_pd. The latter is due to TΣ_{ωn ≠ 0} χ^c(q, iω_n) and shows a weak T and U_pd dependence. The intensity of the diffuse X-ray scattering on taking the charge fluctuation into account is also calculated. The result is consistent with the experiments in La_2−δSr_δCuO₄.     

ESR of double-perovskite Sr2FeMoO6

We present an ESR study of Sr₂FeMoO₆ in the paramagnetic region. A single line at g≈2 was associated with Fe³⁺ ions. The intensity follows Curie–Weiss law in the whole T range. For T >500 K a secondary line is attributed to ferromagnetic (FM) impurities. The line width is described by ΔH_pp(T)=ΔH_pp(∞)(1−Θ/T) with a high value for ΔH_pp(∞). The absence of narrowing effects is a signature of double-exchange (DE) interactions and indicates that DE drives the FM ordering at a relatively high T_c.     

Peak effect and oxygen ordering in YBa2Cu3O7−δ single crystals

We have investigated the second magnetization peak in pure YBa₂Cu₃O_7−δ single crystals with various oxygen contents (6.91<7−δ<6.97) and degrees of oxygen vacancy ordering, as achieved by low (1 bar) and high (100 bar) oxygen pressure annealing. Although the position of the peak changes drastically with oxygen stoichiometry, no dependence on the distribution of oxygen vacancies has been found for temperatures below 70 K. For T>70 K, however, ordering effects become important as demonstrated by the disappearance of the peak for the high pressure annealed samples. These results suggest that while at low temperatures, pinning of the vortex system by clusters or a more homogeneous distribution of oxygen vacancies is similar, at elevated T, the former are much stronger pinning sites leading to larger hysteresis and the presence of the peak.     

Na2TiGeO5: Crystal structure stability at low temperature and high pressure

The temperature evolution of the lattice parameters measured from 295 to 125 K exhibits a small instability below T_c≈278 K, indicating ferroelastic properties of Na₂TiGeO₅. The behavior is related to the specific crystal structure built of polyhedral layers with shared TiO₅ pyramids and GeO₄ tetrahedra, alternating with layers of Na⁺ cations. Antiparallel alignment of the short apical titanyl bond in adjacent rows of the polyhedral layer gives rise to spontaneous strain, when a distortion of the TiO₅ groups occurs. Single-crystal structures determined at room temperature and 120 K suggest that {1 1 0} domains, developing below T_c, entail a tetragonal-to-orthorhombic symmetry change. The mechanism is attributed to a shortening of the O–O distance between the polyhedral layers, and to minor shifts of the positions of the Ti atoms and the correlated oxygen atoms along the c-axis. The structure distortion, however, is too small to allow any unambiguous determination of the symmetry-breaking effects. The bulk modulus and its pressure derivative have been determined as B₀=89(2) GPa and . A pressure-induced phase transformation takes place at P_c≈12.5 GPa, presumably to an orthorhombic structure. The pressure effect on the transition temperature is given by ΔT_c/ΔP≈1.76 K/GPa.     

27Al and 65Cu NMR study in UCu5Al.

We have studied the microscopic properties of the tetragonal UCu₅Al Kondo compound by ²⁷Al and ^63,65Cu NMR in the paramagnetic state. NMR and susceptibility measurements performed on the powdered sample, but oriented along the applied field, showed χ>χ. Plots of K(T) against χ(T) at temperatures T≥100 K yield the transferred hyperfine fields of +5.9 kOe/μ_B for ²⁷Al nuclei, and +5.3 and −7.0 kOe/μ_B for ⁶⁵Cu nuclei in crystallographically inequivalent Cu(2) and Cu(1) sites, respectively. The Knight shift vs. susceptibility plots for T<100 K exhibit a deviation from the linear behaviour (absolute values of shifts become smaller than expected). We attribute this finding to the crystalline electric field effect in similar way as it was reported for several Ce-based compounds. The random distribution of the Al and Cu(2) atoms in the crystal lattice we consider as a reason of an unusual broadening of the NMR spectra, particularly at low temperatures.     

Diffusion of Na in sodium borate glasses

Diffusion of ²²Na in ion-conducting xNa₂O·(1−x)B₂O₃ glasses (x=0.2 and 0.3) was investigated under standard conditions and under high pressure employing the radiotracer sectioning method. A slight decrease of the diffusion coefficients with increasing time of diffusion annealing is observed and attributed to a structural relaxation of the glass network. The temperature dependence of diffusion was measured below and also in a small temperature range above the glass transition temperature (T_G). Below T_G the diffusion coefficients obey Arrhenius relations. Diffusion in the glass with x=0.3 is fast and associated with an activation enthalpy of 71 kJ mol⁻¹. The diffusion coefficients of the glass with x=0.2 are significantly smaller with an activation enthalpy of 112 kJ mol⁻¹. The activation volume ΔV of Na-diffusion in 0.3Na₂O·0.7B₂O₃ was determined from high pressure diffusion studies at 623 K. A value of 0.52 molar volume of the glass matrix was obtained. According to our knowledge this is the first measurement of an activation volume of diffusion in ion-conducting glasses. The present results will be discussed and compared with dc conductivity data for borate glasses and diffusion results for other oxide glasses reported in the literature.     

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current–voltage (I–V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs_0.25P_0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and ΔE_c was estimated as 200–240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K.     

Thermodynamics of mixtures containing alkoxyethanols. Part XXV. Densities, excess molar volumes and speeds of sound at 293.15, 298.15 and 303.15 K, and isothermal compressibilities at 298.15 K for 2-alkoxyethanol + 1-butanol systems

Densities, ρ, and speeds of sound, u, of systems formed by 2-methoxyethanol (2ME), 2-ethoxyethanol (2EE), 2-propoxyethanol (2PE), or 2-butoxyethanol (2BE) and 1-butanol have been measured at 293.15, 298.15 and 303.15 K and atmospheric pressure using a vibrating tube densimeter and sound analyser Anton Paar model DSA-5000. The ρ and u values were used to calculate excess molar volumes, V^E, at those temperatures and deviations from the ideal behaviour of the thermal expansion coefficient, Δ_P, or of the isentropic and isothermal compressibilities, Δκ_S and Δκ_T at 298.15 K. From the data, it is apparent that the interactional contribution to V^E is more important for systems with 2ME or 2EE, while structural effects are more relevant in the 2PE or 2BE mixtures, and that dipolar interactions decrease with the size of the 2-alkoxyethanol. Several methods are applied to predict speeds of sound: free length theory (FLT), collision factor theory (CFT), and Nomoto, Junjie and Van Dael equations. CFT and Nomoto's equation provide the better predictions. Finally, 1-butanol + 2-alkoxyethanol, or + 2-(2-alkoxyethoxy)ethanol mixtures have been studied using ERAS. Poorer results were obtained for systems including 2-(2-alkoxyethoxy)ethanols, which may be due to dipolar interactions and structural effects are more important in such solutions.     

Anisotropic dielectric properties of PbYb1/2Ta1/2O3 single crystals

PbYb_1/2Ta_1/2O₃ single crystals were obtained for the first time. They were grown by the flux method. The PbOPbF₂B₂O₃ system was used as a solvent. Dielectric investigations were carried out in 1 0 0_c, 1 1 0_c and 1 1 1_c pseudocubic directions. These studies pointed to anisotropy of dielectric properties. Frequency-independent ε′(T) and ε″(T) maxima related to the antiferroelectric–paraelectric (AFE—PE) phase transition are observed for all directions at 562 K. The frequency-dependent ε′(T) and ε″(T) maxima near 400 K related to the ferroelectric (FE)–AFE phase transition are observed only in 1 1 1_c direction. The hysteresis loops were observed in this direction only. These results point that ferroelectric relaxor properties appear only in 1 1 1_c direction. We propose to consider the ferroelectric phase as ferrielectric one.     

Direct measurement of the magnetocaloric effect in La0.67Ca0.33MnO3

Polycrystalline perovskite La_0.67Ca_0.33MnO₃ was synthesized by a sol–gel method. Its adiabatic temperature change ΔT_ad induced by a magnetic field change was measured directly. At 268 K, near its Curie temperature T_C, ΔT_ad of La_0.67Ca_0.33MnO₃ induced by a magnetic field change of 2.02 T reaches 2.4 K. The latent heat Q and magnetic entropy change −ΔS_M induced by a magnetic field change were calculated from the temperature dependence of ΔT_ad and zero-field heat capacity C_p. The maximum values of Q and −ΔS_M in La_0.67Ca_0.33MnO₃ induced by a magnetic field change of 2.02 T are 1.85 J g⁻¹ and 6.9 J kg⁻¹ K⁻¹, respectively. The former is larger than the phase transition latent heat of heating or cooling, which is about 1.70 J g⁻¹.     

Conductivity peaks broadening in the quantum Hall regime

We argue that it is the hopping transport that is responsible for broadening of the σ_xx peaks. Explicit expressions for the width Δν of a peak as a function of the temperature T, current J and frequency ω are found. It is shown that Δν grows with T as (T/T₁)^κ, where κ is the inverse localization-length exponent. The current J is shown to act like the effective temperature T_eff(J) ∝ J^1/2 if . Broadening of the ohmic ac-conductivity peaks with frequency ω is found to be determined by the effective temperature