羧甲基-β-1,3-葡聚糖对人肝癌HepG2细胞的放射增敏作用

本研究旨在探讨羧甲基-β-1,3葡聚糖（CMG）对人肝癌HepG2细胞X射线或12C6+离子束辐射敏感性的影响。首先用CCK-8法检测CMG对HepG2细胞的生长抑制情况,得到半数抑制浓度（IC50）为120.6μg/mL。用浓度为0.1×IC50的CMG预处理HepG2细胞24 h,再给予2 Gy X射线或12C6+离子束辐照（CMG+辐照组）;CMG未处理组直接接受2 Gy X射线或12C6+离子束辐照（辐照组）。对比分析辐照组和CMG+辐照组细胞的克隆存活、DNA损伤、凋亡与周期分布、细胞内活性氧（ROS）水平。发现:与X射线辐照组相比,相同剂量的12C6+离子辐照组克隆存活率更小,DNA损伤和周期阻滞更加严重,细胞凋亡率和细胞内ROS水平也更高。与单独X射线或12C6+离子束辐照组相比,CMG+辐照组克隆存活率明显降低,细胞凋亡率随辐照后CMG作用时间的延长而明显增加,CMG使辐照后细胞内ROS维持在一个较高的水平,同时CMG明显加重了单独辐照诱导的DNA损伤和周期阻滞。结果表明,与X射线相比,HepG2细胞对相同剂量的12C6+离子辐射更敏感;CMG可增加HepG2细胞对X射线或12C6+离子辐射的敏感性;CMG可能通过增加受照HepG2细胞内的ROS水平,加剧辐照诱导的DNA损伤,促进辐射诱导细胞凋亡而起到辐射增敏作用。This study aims to investigate the effect of carboxymethy-β-1, 3-glucan (CMG) on the sensitivity of human hepatoma HepG2 cells to X-rays or 12C6+ ions irradiation. First, the inhibitory effect of CMG on the growth of HepG2 cells was detected by CCK-8 assay, and the half maximal inhibitory concentration (IC50) was 120.6 μg/mL. HepG2 cells were pretreated with CMG at a concentration of 0.1×IC50 for 24 h and then irradiated with 2 Gy X-ray or 12C6+ ion beams (CMG + irradiation group). CMG untreated group was directly irradiated by 2 Gy X-rays or 12C6+ ions beam (irradiation group). The clone survival, DNA damage, cell apoptosis, cell cycle distribution, and intracellular reactive oxygen species (ROS) levels in irradiation group and CMG + irradiation group were comparatively analyzed. The results showed that the clone survival rate was lower, DNA damage and cycle arrest were more serious, and the rate of apoptosis and intracellular ROS levels were higher in 12C6+ ions irradiation group than those in the same dose of X-rays irradiation group. Compared with X-rays or 12C6+ ions irradiation group, the clone survival rate of CMG + irradiation group was significantly decreased, and the apoptosis rate significantly increased with the prolongation of CMG treatment post-irradiation; CMG maintained intracellular ROS at a higher level after irradiation, CMG also significantly aggravated radiation-induced DNA damage and cycle arrest. These results indicated that HepG2 cells were more sensitive to 12C6+ ions radiation than those at the same dose of X-rays. CMG increased the sensitivity of HepG2 cells to X-rays or 12C6+ ions irradiation by increasing intracellular ROS level, exacerbating radiation-induced DNA damage and promoting radiation-induced apoptosis in irradiated HepG2 cells.     

重离子诱导细胞衰老研究

综述了细胞衰老诱导因素和衰老细胞的特征,提出细胞衰老在癌症发生发展过程中具有双重作用效应。同时,以X射线和12C6+离子束对黑色素瘤细胞系92-1或人正常成纤维细胞系MRC5进行辐照,观察分析DNA损伤应答效应和细胞衰老诱导。实验结果表明,相对于X射线,12C6+离子束能导致DNA团簇损伤,持续激活DNA损伤应答,更容易诱导细胞衰老;12C6+离子束能同时诱导癌细胞和正常细胞衰老。这些实验结果暗示开展12C6+离子束诱导细胞衰老研究具有紧迫性。     

氧化钆纳米粒子对A549肺癌细胞的辐射增敏效应研究

采用氧化钆纳米粒子（GON）,研究钆基纳米粒子对X射线和碳离子束的辐射增敏效应。首先,通过透射电镜观察材料粒径,使用DLS检测材料的水合半径及Zeta电位,并用紫外吸收谱证实GON在培养基中稳定性较好;研究发现钆（Gd）浓度为10.0 μg/mL的GON对30 keV/μm碳离子束辐照水溶液产生的羟自由基的增强系数为1.13;GON对A549肺癌细胞和正常MRC-5肺细胞没有明显的毒性,且在人肺癌A549细胞中的摄取量随共培养浓度的增加而增加,在10.0 μg/mL共培养浓度下,细胞摄入Gd的量为0.73 pg/cell;进一步采用克隆存活实验证明,GON的加入对X射线和碳离子辐照A549细胞所产生的损伤具有明显的增强,在10%的细胞存活水平下,GON对A549细胞在X射线及碳离子辐照下的辐射增敏分别达15.5%和10.1%。鉴于钆材料常被用于磁共振成像（MRI）,所获得的GON有望作为X射线和碳离子的诊疗一体化材料。     

内质网应激对碳离子辐照宫颈癌HeLa 细胞的影响

利用不同剂量的碳离子辐照二硫苏糖醇(2.5 mmol/L) 预处理的HeLa 细胞,探讨了内质网应激反应对碳离子辐照宫颈癌HeLa 细胞的影响。实验发现:与单独辐照组相比,二硫苏糖醇联合碳离子辐照后细胞的存活率下降,而凋亡率增加;二硫苏糖醇联合碳离子辐照加重了碳离子辐照引起的细胞周期阻滞;且联合辐照组的自噬被明显激活。结果表明,持续的内质网应激可改变宫颈癌HeLa 细胞对碳离子辐照反应,且二硫苏糖醇可能通过影响HeLa 细胞的自噬性细胞死亡通路发挥作用。To investigate the effect of endoplasmic reticulum stress on HeLa cells to 12C6+ ion irradiation,HeLa cells were pretreated with 2.5 mmol/L dithiothreitol and irradiated by 12C6+ ions with different doses.The results showed that, compared with IR alone, dithiothreitol combined with carbon ion irradiation caused HeLa cell survival decreased, and the apoptosis increased. Moreover, dithiothreitol and carbon ion radiation combination treatment led to a significant increase of G2/M phase, and autophagy was activated obviously in combination treatment group. The results imply that continuous endoplasmic reticulum stress can change the response of HeLa cells to 12C6+ irradiation, and dithiothreitol may affect HeLa cells through the autophagy cell death pathway.     

12C和X射线辐照人肺癌细胞H1299的生物学效应

用高传能线密度（LET）的12C离子束和低LET的X射线辐照体外培养的非小细胞肺癌H1299(p53基因缺失), 研究它们的辐照生物学效应的差异。 用克隆形成率法测定了细胞对射线的辐射敏感性; 用AnnexinV/PI试剂盒检测了细胞早期凋亡; 用流式细胞仪检测了细胞周期变化。 实验结果表明, 12C离子束辐照H1299细胞的存活率明显低于用X射线辐照的; 12C离子束引起H1299细胞的早期凋亡率明显高于X射线辐照引起的, 且持续时间更长; 12C离子束引起的H1299细胞G2/M期的抑制更明显。 说明H1299细胞对高LET的12C离子束的辐射敏感性高于对X射线的, 重离子对p53基因缺失型肿瘤的治疗可实施较低的照射剂量、 较少的照射次数和较长的时间间隔。     

阿佛曼链霉菌的~(12)C离子辐照效应及高产菌株选育

选用12C6+离子辐照诱变阿维菌素B1a产生菌ZJAV-A1,研究其诱变效应。实验结果表明,12C6+离子辐照剂量50Gy时致死率97%,正突变率最高可达到34.2%。通过12C6+离子诱变处理,结合平板培养基及斜面培养基的正突变菌株筛选,最终获得一株稳定性良好,阿维菌素B1a组分产量稳定在4460—4588μg/ml之间,较出发菌株提高11.1%—14.7%的突变株ZJAV-Y1-203。     

X射线致HeLa细胞损伤过程中NADPH氧化酶的作斥

以HeLa细胞为实验材料,探讨了NADPH氧化酶在X射线诱导细胞损伤过程中的作用。结果显示,12Cry X射线辐照后细胞内活性氧（ROS）明显增加,在用NADPH氧化酶抑制剂处理后再辐照,则细胞内ROS降低到未辐照水平;同时辐照后NADPH氧化酶细胞质亚基p47^phox在细胞质积聚并和细胞膜亚基gp91^phox结合;Western blotting检测结果显示,NADPH氧化酶的关键亚基gp91^phox的表达量明显增加。以上结果说明,NADPH氧化酶可以被X射线激活,由其介导产生的ROS在X射线诱导HeLa细胞损伤过程中扮演重要角色。     

~(12)C~(6+)离子束辐照紫苏干种子当代效应

利用兰州重离子研究装置(HIRFL)提供的12C6+离子束辐照紫苏干种子(辐照剂量为40,80和120Gy,剂量率4Gy/min),探讨了重离子束辐照对紫苏M1代的生物学效应。结果发现,经不同剂量的12C6+离子束辐照后,紫苏种子的发芽率、发芽势、存活率、株高、分枝数、单株产量和千粒重等生物学性状均发生了变化,其中发芽势、单株产量和千粒重随辐照剂量的提高而降低,且有明显的剂量效应关系,但发芽率、大田成活率、株高和分枝数却随辐照剂量的增大,呈现出明显的"抛物线"趋势;紫苏幼苗根尖细胞的微核率和染色体畸变率随辐照剂量增加呈线性增加关系。这表明:12C6+重离子束辐照紫苏种子,具有明显的当代损伤效应,在本试验剂量范围内,低剂量辐照对发芽率和成活率有促进作用。     

^12C和X射线辐照人肺癌细胞H1299的生物学效应

用高传能线密度（LET）的^12C离子束和低LET的X射线辐照体外培养的非小细胞肺癌H1299（p53基因缺失）,研究它们的辐照生物学效应的差异。用克隆形成率法测定了细胞对射线的辐射敏感性;用AnnexinV/PI试剂盒检测了细胞早期凋亡;用流式细胞仪检测了细胞周期变化。实验结果表明,^12C离子束辐照H1299细胞的存活率明显低于用X射线辐照的;^12C离子束引起H1299细胞的早期凋亡率明显高于X射线辐照引起的,且持续时间更长;^12C离子束引起的H1299细胞G2/M期的抑制更明显。说明H1299细胞对高LET的^12C离子束的辐射敏感性高于对X射线的,重离子对p53基因缺失型肿瘤的治疗可实施较低的照射剂量、较少的照射次数和较长的时间间隔。     

2018年10期 电子期刊

采用自蔓延燃烧法结合高温热处理方法制备了镝离子掺杂浓度不同的七铝酸十二钙（12CaO·7Al₂O₃:x% Dy³⁺,C12A7:x% Dy³⁺） X射线荧光粉材料。实验发现,该系列荧光粉在350 nm激发下,可观察到位于486 nm和575 nm的两个发光峰,其分别来源于Dy³⁺离子的⁴F_9/2→⁶H_15/2和⁴F_9/2→⁶H_13/2跃迁。当镝掺杂摩尔分数为0.3%时,两个发光峰的发射强度最大。在氮气气氛下,1 300℃热处理C12A7:x% Dy³⁺荧光粉后,与未热处理样品相比,笼中OH^-基团减少,导致其光激励发光强度显著增大,并产生了更多的深陷阱。通过使用氮气气氛热处理后的C12A7:0.3% Dy³⁺粉末制成的成像板,以包覆有绝缘层细电线为成像目标,发现在合适的X射线吸收剂量下（0.54 Gy）,可以实现高质量的X射线成像。以上实验结果表明,镝掺杂的七铝酸十二钙X射线荧光粉材料在数字化静态X射线图像目标检测技术中有潜在的应用前景。     

电子辐照对ZnO／K2SiO2型热控涂层光学性能的影响

研究了电子辐照对ZnO/K2SiO2型热控涂层光学性能的影响,采用10,30,50和70keV的电子对试样进行辐照。在辐照前后对每一个试样的光谱反射系数进行了原位测量。根据Johnson太阳光谱分布计算了涂层的太阳光谱吸收系数,分析了电子能量对光谱反射系数和太阳光谱吸收系数的影响,并对红外区光谱反射系数的变化结果进行了讨论。实验结果发现电子辐照后ZnO/K2SiO2涂层的光学性能发生严重退化,退化程度取决于电子能量,随电子能量的增大而增大。     

Curie temperatures of Y3Fe5O12/Gd3Fe5O12 superlattices

The magneto-optical Kerr effects (MOKE) of epitaxial Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ (YIG/GGG) garnet superlattices grown on (1 1 1)GGG previously by pulsed laser deposition (PLD) were measured. A series of superlattices were investigated with the thickness of the ferrimagnetic YIG layer varied from six unit cells to only one unit cell while keeping the Curie paramagnetic GGG fixed at one unit cell. It was demonstrated that the ellipsometric technique employing photoelastic modulators (PEM) is sensitive enough to measure the MOKE signals of these ultrathin oxide samples. The Curie temperatures, determined by MOKE, are fit with a power law, yielding a shift exponent λ = 3.1 ± 1.2.     

InAlAs浓度对In_(0.83)Al_(0.17)As/In_(0.83)Ga_(0.17)As红外探测器特性的影响北大核心CSCD

红外探测器的性能受内部结构各层掺杂浓度的影响,而倍增层掺杂浓度会明显改变器件的性能。为了降低暗电流,提高器件性能,采用三元化合物In_(0.83)Al_(0.17)As作为倍增层材料,借助仿真软件Silvaco详细研究了In_(0.83)Al_(0.17)As/In_(0.83)Ga_(0.17)As红外探测器的倍增层掺杂浓度对器件电场强度、电流特性和光响应度的影响规律。结果表明,随着倍增层掺杂浓度的增加,器件倍增层内的电场强度峰值增加,同时,器件的暗电流与光响应度减小。进一步研究发现,当倍增层掺杂浓度为2×10^(16) cm^(−3)时,器件获得最优性能,暗电流密度为0.62144 A/cm^(2),在波长为1.5μm时,光响应度和比探测率分别为0.9544 A/W和1.9475×10^(9) cmHz^(1/2)W^(−1)。     

Room temperature synthesis and characterization of NaEuF4 nanorods and Na5Eu9F32 nanospheres

A simple solution-based route was used to selectively synthesize two ternary metal fluoride NaEuF₄ nanorods with hexagonal structure and Na₅Eu₉F₃₂ nanospheres with cubic structure at room temperature. It is found that NaEuF₄ nanorods can be transformed into Na₅Eu₉F₃₂ nanospheres with the increasing the reaction time in the presence of excessive NaF. The luminescence properties of these two metal fluorides were investigated and the possible formation mechanism was discussed.     

Luminescence of Ba0.85MgAl10O16.94：Eu^2＋0.09 with different fluxes

BaMgAl10O17:Eu^2 , known as BAM, is a very important blue-emitting phosphor used in plasma display panels (PDP) and three band fluorescent lamps. In this paper, the Ba0.s5MgAl10O16.94:Eu^2 0.09 phosphors with different fluxes (BaF2, MgF2, AIF3, BaCl2, MgCl2, AICl3, H3BO3) were prepared by high temperature solid-state reaction method and the influence of different fluxes on the luminescence of Ba0.85MgAl10O16.94:Eu^2 0.09 phosphor was studied under 254nm excitation and vacuum ultraviolet (VUV) excitation. It was found that fluorides have better flux effects than chlorides and H3BO3. The mechanism of particle growth in the presence of flux in the process of phosphor preparation is discussed in detail. Particle size distribution and the crystal structure of the phosphors are also analysed.     

Effects of the surface layer of La2/3Ca1/3MnO3 thin films

The surface layer effects on transport in epitaxial La_2/3Ca_1/3MnO₃ thin films are studied. It was found that the two-probe resistance is nonlinear which is enhanced with decreasing temperature. Similar to the resistance of intrinsic La_2/3Ca_1/3MnO₃ thin films reported in the literature, the apparent dynamic contact resistance behaves semiconducting at high temperatures, passes through a peak, and displays a metallic behavior. At lowest temperatures, the curve of the contact resistance versus temperature shows a little upturn. The temperature dependent work function difference between the surface layer and the thin film underneath, together with the tunneling process across either the resulting charge depleted layer or the semiconducting surface layer is used to explain our observations.     

On the β-decay 210Bi(RaE) → 210Po(RaF)

It was the aim of the present work to extract nuclear wave functions directly from experimental data of β-transitions. As a favourable example the 1^? (1.153 MeVβ^?)0⁺ β-transition of ²¹⁰Bi(RaE) was studied. The results obtained are compared with theoretical wave functions and good quantitative agreement, especially for the ground state of the daughter nucleus ²¹⁰Po, was found. It is explicitely demonstrated how, in this case, the higher order terms of the transition matrix elements contribute. The results for the matrix element ratios μ and Λ are discussed. In particular it is shown that it is not possible to test CVC theory by examining Λ.     

Low-temperature sintering of M-type barium ferrite with BaCu(B2O5) additive

The aim of this work is to lower the sintered temperature of M-type barium ferrite (BaM) by BaCu(B₂O₅) (BCB) additives. The effects of BCB additives on the sintering behavior, structure and magnetic properties of BaM were also discussed. It was found that the sintered density, saturation magnetization and initial permeability of BaM are modified obviously as small amount of BCB (1-4 wt%) is added. Especially, when BaM with 3 wt% BCB was sintered at 900 °C, the single-phase BaM was obtained and showed excellent properties with sintered density of 4.88 g/cm³, saturation magnetization of 61.4 emu/g and initial permeability of 3.15. In addition, the SEM result revealed that the sample can be co-fired well with the Ag electrode at 900 °C. The reason for this was attributed to be the formation of the BCB liquid phase. It suggests that this M-type barium ferrite can be used as LTCC substrate for millimeter wave circulator, filter and other magnetic microwave devices.     

Magnetic and electric properties of the colossal magnetoresistance manganite Sm1.4Sr1.2Ca0.4Mn2O7

Polycrystalline Sm_1.4Sr_1.2Ca_0.4Mn₂O₇ has been successfully synthesized and investigated with respect to its magnetic and electrical properties. It is found that the sample shows a metal insulator (M-I) transition at 88 K. The maxima of the magnetoresistance (MR) ratio are 95.38% and 98.55% under applied fields of 2 T and 5 T, respectively. At 10 K, the MR attains ∼75% at 5 T. The large MR at low temperature can be attributed to the effects of nearly fully spin-polarized carriers tunneling through the insulating (Sm, Sr, Ca)₂O₂ layers between the adjacent MnO₂ bi-layers. The magnetization data indicates the existence of ferromagnetic clusters.