Identification of Urinary Stone Components by X‐Ray Photoelectron Spectroscopy

Abstract

X‐ray photoelectron spectroscopy (XPS) has been used for the first time to study the composition of calcium oxalate (CaOxa) stones and uric acid stones. This technique allows for the identification and location of various inorganic and organic species at the same time. In CaOxa stones, there were less than 10% of phosphates. Sectional analyses of these stones indicated that the content of phosphorus in the stone center is higher than that in stone crust. In uric acid stones, CaOxa was rarely found. XPS is able to detect differences in chemical functionality. In uric acid stones, the binding energy (E _b) for nitrogen atoms were about 399.5 ± 0.2 eV, which are largely characteristic of organic nitrogens N (?3). In comparison, the E _b values of N (+5) in inorganic compounds are about 401 eV.     

Experimental estimation of the possible subbarrier penetration of ultracold neutrons through vacuum-tight foils

The probability of subbarrier penetration of ultracold neutrons through 15 μm-thick vacuum-tight beryllium foil (boundary energy for beryllium is E _{lim Be}=249 eV) was measured. It is equal to (?1.2±1.0) × 10^?8 per collision of neutrons with energy lower than ～160 neV.     

Electron beam-induced fullerite structure transformation

Auger spectra of thin fullerite (C₆₀) films have been measured under the conditions precluding their electrostatic charging and destruction. The Auger line of these subjects, E _f=268.3±0.2 eV, turned out to lie considerably lower in energy than that of the ion-beam amorphized graphite (E _AG=272.3±0.2 eV) and of pyrographite (E _PG=271.8±0.5 eV). Fullerite was found to convert to a graphitic form under irradiation by low-intensity electron beams used customarily in AES, reflection EELS, and inverse photoemission spectroscopy. It has been established that such beams produce noticeable changes in the fullerite structure already in a few minutes of irradiation. Fiz. Tverd. Tela (St. Petersburg) 39, 187–190 (January 1997)     

Abstracts

Abstract

Isothermal annealing of amorphous Si and Ge has been performed by picosecond pulsed laser irradiation of free-standing films. It is found that the laser induced nucleation rate is about 10²¹-5.10²² cm^?3 s^?1 (Si) and 10²³-10²⁵ cm^?3 s^?1 (Ge) near the melting point. Arrhenius plots of the nucleation rate show that nucleation is thermally activated with an activation energy of about ΔE = 1.8 ± 0.1 eV (Ge) and ΔE = 2.47 ± 0.15 eV (Si).     

Monovacancy formation energy in copper,silver, and gold by positron annihilation

Monovacancy formation energies in copper, silver, and gold have been deduced from the temperature variation of the peak counting rate in the angular correlation curve of positron annihilation radiation from these metals. The counting rate was temperature dependent over the entire temperature range, including temperatures so low that no trapping of positrons at vacancies is effective. At these temperatures the increase in counting rate results from thermal expansion of the lattice. By separating this thermal expansion effect from the vacancy trapping effect at higher temperatures, we obtained values for the monovacancy formation energyE _1v for copper, silver, and gold to 1.29±0.02 eV, 1.16±0.02 eV, and 0.97±0.01 eV, respectively.     

Diffusion of sodium in rubidium chloride

The diffusion of Na²²Cl in RbCl was measured in the temperature range 377–707°C by the tracer-sectioning technique. The activation energy is 2.06± 0.02 and 0.59 ± 0.01 eV in the intrinsic and extrinsic regions, respectively. The temperature dependence of the correlation factor, as deduced from isotope-effect measurements, is 0.19 eV in the intrinsic region and -0.05 eV in the extrinsic region. When a theoretical value for the Na^+- vacancy binding energy is used, values of ½h_f =1.22, eV and h_m= 0.55 eV are obtained where h_f is the energy of formation, and h_m the energy of motion, of a cation vacancy. These values are not in agreement with the calculation by Tosi and Doyama.     

Electrical properties and diffusion behavior of hafnium in single crystal silicon

Electrical properties and diffusivity of Hf in single crystal Si have been studied. Several deep level defects were found for Hf in both the upper and lower half of the silicon band gap, and their parameters were measured. Energy levels, concentrations, and capture cross sections were determined for all Hf defects. The DLTS spectra depend on the cooling rate. Analysis of electrical properties yielded a dominant deep level defect at E_C -0.27 eV, which showed field enhanced emission due to Poole–Frenkel effect, confirming its donor nature. This agreed with results obtained using CV and TSCAP. In the lower half of the bandgap, a defect level at E_V +0.24 eV was found to have a capture barrier of 0.04 eV. Diffusivity of Hf was studied using two methods for Hf incorporation in Si – ion implantation and sputtering. Analysis of broadening of the Hf profile in implanted samples, which were annealed for 168 h, allowed us to estimate the diffusivity of Hf as 1.7×10^-15 cm²/s at 1250 °C: the spreading of implanted profiles at lower temperatures was too small. Analysis of Hf depth profiles in the sputtered and annealed samples reveals that Hf appears to have a fast and slow component to its diffusivity whose migration energy was determined to be 3.5±0.3 eV and 4.1±0.3 eV respectively. The fast and slow component are ascribed to interstitial and substitutional Hf with an energy level of E_C -0.27 eV and E_V +0.43 eV respectively. The mechanism for the fast component seems to indicate a direct interstitial diffusion mechanism whereas the diffusion of the substitutional Hf seems most consistent with the concerted exchange diffusion mechanism. In addition, estimates of solubility for both, interstitial and substitutional Hf, are included. PACS 61.72.Tt; 66.30.Jt; 71.55.Cn     

Low temperature photoconductivity in electron - irradiated p-type Si

The photoconductivity spectra of p-type silicon irradiated at ～15 °K with 1.2 MeV electrons were studied in the wavelength range from 1.2 to 5.5 μ at temperatures from 23 to 80 °K. The 3.9 μ photoconductivity band appears immediately after irradiation in all crystals already at low temperatures, giving further evidence that it is due to the divacancy formed directly during irradiation by electrons. Three main annealing stages of the photoconductivity have been observed; (a) below 160 °K, (b) 160–250 °K, and (c) 280–360 °K. A radiation-induced deep level at E_v , +(0.12±0.02 eV disappears upon annealing at stage b. The annealing behavior of the spectra depends strongly on the measuring temperature. The dependence of the spectra on chopper speed was also investigated.     

Interactions of slow neutrons with the chromium isotopes

Neutron transmission experiments and determinations of coherent scattering lengths were performed on natural chromium and enriched samples of⁵⁰Cr,⁵²Cr,⁵³Cr and⁵⁴Cr. By means of the Christiansen-filter-technique we obtained new values for the scattering lengths of the bound atoms:b(^natCr)=3.635±0.007 fm,b(⁵⁰Cr)=?4.50±0.05 fm,b(⁵²Cr)=4.914±0.015 fm,b(53Cr)=?4.20±0.03 fm, andb(⁵⁴Cr)=4.55±0.10 fm. The transmission experiments with neutrons of 510 ΜeV, 1.26 eV and 5.19 eV energy resulted in data for the absorption cross sectionσ _a (^natCr) =3.05±0.08 b and for the scattering cross section at “zero energy”:σ ₀ (^natCr)=3.381±0.010 b. Data for incoherent and spin-state scattering and for the potential-scattering radius of the nuclei could be deduced from these results.     

The density of quenched gold

A precision hydrostatic differential method for measuring small density differences of solid bodies was used to determine the activation energy of vacancy formation and migration in quenched gold. The values were found to beE _f =0·76 eV, andE _m =0·51 eV.E _f is substantially lower than the well established value 0·96 eV, whereasE _m is close to the value 0·56 eV determined by Jeannette and Machlin for oxygen-free gold.The concentration of vacancies determined from our measurement is of the same order as the absolute calorimetric determination by DeSorbo.A short communication was read at the Conference on Point Defects in Quenched Metals, ANL, June 1964.     

Thermoreflectance measurements on zinc sulphide-telluride alloys

Thermoreflectance measurements of the energies E₀, Δ₀ and E₁ have been made throughout the composition range of ZnS-Te alloys. The bowing parameters were found to be 2.8 ± 0.2 eV for the E₀ gap, 0.48 ± 0.08 eV for Δ₀ and 1.5 ± 0.2 eV for the E₁ energy-gap. These measured bowing parameters are in good agreement with the values calculated from EPM theory.     

Examination of optical properties and estimation of mechanical energies of irradiated polypropylene and teflon

The optical absorption and mechanical yielding energy has been studied under exposure of γ-radiation. Two crystalline polymers, polypropylene (PP) and Teflon, were irradiated with a ⁶⁰Co source, with doses ranging up to 6 kGy. The observed optical energy gap (E _opt) and energy gap tail (Δ E) for irradiated thin sheets of PP were determined from the measured absorption spectra. The average values of (E _opt) and (Δ E) were 5.85 and 0.5 eV, respectively. There is no detectable change in the optical energy gap under the applied γ-ray doses. On the other hand, the effect of γ-radiation on mechanical properties of irradiated Teflon was much pronounced. It was found that Young’s modulus and yield stress increase with radiation dose, whereas the yield strain decreases. The calculated yield energy increases with radiation dose from 0.27 to 0.35 Mpa per unit volume. The enhancement in the mechanical properties of irradiated Teflon was attributed mainly to crosslinking process and other structural changes occuring during irradiation with γ-rays.     

氦对LaNi5晶体结构的影响及其扩散特性研究

从密度泛函理论为基础的第一性原理出发,运用全势能线性缀加平面波(FLAPW)方法,对氚衰变后氦在合金中的占位以及LaNi₅He晶体结构进行了理论计算,并系统给出了氦在间隙间的迁移曲线.结果表明,氦原子在十二面体(1b)格位最稳定,并且氦从6m格位向1b格位迁移不存在势垒,而从2d格位向1b格位迁移则需越过1.55eV高的势垒.另外,氦从12n格位穿过12o格位最后到达6m格位也无明显势垒存在,并且处于4h格位之间的氦原子可以自由迁移,而相应12n格位之间的直接迁移则需跨越13.6eV高的势垒.最后还计算给出了氚衰变后合金的态密度、电子密度以及势能分布图,并与相应的LaNi₅H结构作了详细比较. 关键词： 全势能线性缀加平面波(FLAPW) 5He')" href="#">LaNi₅He 态密度 扩散     

Features of sputtering of nitrides and their components

The sputtering behaviour of hexagonal or wurtzite polycrystal nitrides of boron, aluminium, and gallium was explored employing methods of molecular dynamics. The sputtering yield Y of nitrides and the average energy ē ₁ of emitted particles were studied as dependent on the mass m ₁ of bombarding He, Li, B, N, Ne, Al, Ar, Ni, Ga, Kr, and Xe ions with the initial energy E ₀ between 200 and 10,000 eV. Y(m ₁) and ē ₁(m ₁) were researched upon for preferential sputtering of nitride components at low E ₀. It was revealed that the ratio between the sputtering yield of the light component and that of the heavy one depends on ion energy and mass. At E ₀=200 eV and m ₁=40, the ratio for BN, AlN, and GaN amounts to 1.2, 2.2, and 2.4, respectively. For nitride components, an anomalous dependence of sputtering on ion mass was found, its maximum occurring at a certain ratio m ₂/m ₁, where m ₂ is the averagè mass of two nitride components.     

Negative Ions,Ozone, and Metastable Components in dc Oxygen Glow Discharge

In a dc glow discharge in oxygen, the concentrations of minor components of O₂(a¹Δ_g), O₂(b¹ Σ_g), O₃, O(¹D), as well as nagative ions and electrons have been measured. Balance equations have been derived which describe satisfactorily the stationary concentrations of these components as functions of gas pressure and discharge current. For the first time, the rate constants of important aeronomical reactions (a) O^? + O₂(a¹Δ_g) → O₃ + e, (b) O₂^? + O₂(a¹Δ_g) → 2O₂ + e and (c) e + O₃ → O₂^? +O have been measured as functions of gas temperature T and mean energies of ions E_i and electron E₆: K_a = (2.5 ± 0.5) · 10^?9 · (T/300)^{4 ± 0.4}· (E_i/0.04)^{?2.6 ± 0.4} cm³/s for T = 385?605 K and E_i = 0.10 ? 0.66 eV; K_b = (1.0 ± 0.3) · 10^?10 · (T/300)^{?2 ± 0.5} · (E_i/0.04)^{0.23 ± 0.05} cm³/s for T = 330?605 K and E_i = 0.09 + 1.5 eV; K_c for E_e = 0.8÷5 eV.     

Energies of Cu1+ ions sputtered from Cu by very low energy (50 eV < E < 1 keV) Inert gas ions

He⁺, Ne⁺ and Ar⁺ ions with energies E₁ between 50 and 1000 eV were used to bombard a polycrystalline Cu target at an angle of 45°. The energies, E₂, of the Cu₁⁺ ions sputtered at 90° to the primary beam were investigated using a UHV magnetic sector mass spectrometer. The maxima of the energy distributions as measured by the instrument, were at values of E₂ of about 4 eV (±1 eV), nearly independent of e₁ and primary ion mass. Plots of log N(E₂) versus log E₂ displayed limited linear portions over which the functional dependence of N(E₂) is proportional to E₂^?0.5. Plots of the average secondary ion energy, ē₂, versus the energy transferred by the primary ion to a Cu atom in a direct collision $\text{([}\text{4m}{}_1\text{m}{}_2\text{(m}{}_1\text{+ m}{}_2\text{)}{}^2\text{]E}{}_1\text{)}$, indicate that ē₂ increases linearly with transfer energy up to a transferred energy of about 200 eV, independent of primary ion mass. Above about 200 eV transferred energy, ē₂ asymptotically approaches values which depend upon primary ion mass. At transferred energies below about 200 eV, the collision kinematics in the fust few collisions appears to dominate the emission process.     

Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation

Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films’ growth on ITO was recorded at room temperature. According to EPR results, the g value of an EPR signal obtained for GaSe deposited on ITO is 2.0012?±?0.0005. In/GaSe/p-Si heterojunction was irradiated with high-energy (6?MeV) and low-dose (1.53?×?10¹⁰?e^??cm^?2) electrons. The ideality factor of the In/GaSe/p-Si device was calculated as 1.24 and barrier height was determined as 0.82?eV from I–V measurements before irradiation. Acceptor concentration, built-in potential and barrier height of the In/GaSe/p-Si device were also obtained as 0.72?×?10^14?cm^?3, 0.65?eV and 0.97?eV from C–V measurements, respectively. After irradiation, the ideality factor n and barrier height Φ_b values of the In/GaSe/p-Si device were calculated as 1.55 and 0.781?eV, respectively. Acceptor concentration, the built-in potential and barrier height values of the In/GaSe/p-Si device have also shown a decrease after 6?MeV electron irradiation. This change in heterojunction device parameters shows that current transport does not obey thermionic emission, and thus tunneling could be active due to the defects formed by irradiation at the In–GaSe interface.     

Thermal activation measurement of positron binding energies at surfaces

The formation of positronium by low-energy positrons incident on “clean” metal surfaces is thermally activated by increasing temperature. The activation energy E_a has been measured for a number of surfaces. E_a is understood as the energy required to form positronium (binding energy 1/2Ry) from positrons bound at the surface by an energy E_b, E_a = E_b+φ_-? 1/2Ry, where φ_- is the electron work function. Representative values of E_b derived are Al(100):3.03(5) eV; Al(110):2.92(4) eV; Cu(111):2.80(5) eV.     

Reevaluation of bandgap and free exciton binding energy of GaP

Very sensitive measurements on the spectral behaviour of the free-to-bound excitation σ_pl^°(hν) from the valence band to the deep 0 donor in GaP at low temperatures are presented. Evaluation of the threshold energy for the electronic transition, together with the known value of the 0 binding energy, provides a simple and accurate way to determine the indirect bandgap E_g of GaP. Our new value is E_g = 2.3525 ± 0.003 eV at 1.5 K, which gives an exciton binding energy E_x = 24 ± 3 meV, considerably larger than previously used values. These data also imply an upward revision of acceptor binding energies in GaP with 10 ± 2 meV.