Shallow impurity states and the free exciton binding energy in gallium phosphide

A new set of donor and acceptor ionization energies in GaP is deduced from photoexcitation spectra. Energy spectrum of donor states confirms an existence of the “camel's back” with a conduction band minima displacement ≈ 0.08(2π/a) from the X, and the corresponding energy shift ≈ 3meV. The free exciton binding energy in GaP is correctly determined: E_ex = 21 ± 2 meV.     

Indirect exciton dispersion in III–V semiconductors: “Camel's back” in GaP

A new perturbation approach to exciton dispersion in indirect gap semiconductors is developed. For GaP and AlSb existence of the “camel's back” in exciton dispersion is confirmed, and a precise value of the “camel's back” parameter for X^c₁-minima in GaP is reported: E(X^c₁)?E_min(Δ^c₁)=3.5±0.3 meV. At the X-point the 21.44 and 19.48 meV exciton binding energies in GaP are obtained. The corresponding valley-anisotropy splitting is 1.96 meV.     

The exciton absorption in deformed germanium

Absorption spectra at 77° K near the direct (κ = 0) exciton transition are reported for deformed and undeformed single-crystal films of n-type Ge oriented on (111); Elliott's theory is applied. The optical width of the forbidden band for this transition is found as E_{g 0} = (0.8821 ±±0.0002) eV, while the exciton binding energy is found as E_ex(0) = = (0.0016±0.0003) eV for undeformed Ge at 77 ° K. The mean temperature coefficient of E_g for κ = 0 in the range 77 °–297 ° K is (dE_g/ /dT)_p =?3.50 · 10^?4 eV/deg. The effects of thermoelastic deformation on the exciton spectrum give (dE_g/dT)_d = (?1.5±0.1) · 10^?4 eV/deg. The half-width σ ≈ 5 · 10^?4 eV of the exciton peak gives the exciton lifetime as gt ≥ 10^?12 sec.     

Spectroscopic search for the free carrier screening of the excitonic binding

A spectroscopic determination of the energy gap E_g and the exciton energy E_x in highly excited Ge at T = 5–20K is presented. Within 0.05 meV we observe no shift of E_g and E_x up to electron-hole densities of 10¹⁴?10¹⁵ cm^?3. In this range all previous theories predict a sizeable band renormalization (ΔE_g ≈?0.3 meV to ? 2 meV).     

Camel's back induced stabilization of electron-hole liquids : GaP

A camel's back-like nonparabolicity of the longitudinal electron mass enhances the density of states and strongly stabilized an electron-hole-liquid. In GaP therefore the EHL density is doubled to 8.6 × 18¹⁸cm^?3 and the Fermi energy ratio E_F^h/E_F^e changes from 1.9 to 4.9. The theoretical binding energy agrees with the experimental E_B=17.5±3meV interpreting the luminescence at 2.30 eV as a superposition of liquid and plasma recombination radiation.     

Differential elastic and quenching cross sections for Ar*(3P) and CO2(X1 ∑ g +)

The energy dependence of the differential scattering of metastable Ar*(³P) by ground-state CO₂(X¹ ∑ _g ⁺) has been studied at relative kinetic energies from 58 to 126 meV over an angular range of 5–160° c.m. using crossed molecular beams. The position and curvature of rainbow maxima, which are observed at each energy, are used to obtain parameters for a Lennard-Jones (12, 6) spherically symmetric potential. The position of the minimum, r _m = 5·02 ± 0·65 Å, is identical to that for K + CO₂ and the well depth, ε = 16·3 ± 0·8 meV, is about 10 per cent greater. The scattered intensity shows a distinct fall-off on the dark side of the rainbow compared to that expected for elastically scattered Ar*. This depletion, caused primarily by the quenching of Ar*, is analysed in terms of the optical-shadow model to determine the energy dependence of the observed quenching cross section, which is predicted to have a maximum of 67 Ų at 193 meV.     

Search for superdeformation in180Os

Two-dimensional γ-ray energy correlations have been measured at high spins in¹⁸⁰0s with the TESSA2 spectrometer. The E_γ ? E_γcorrelation matrix displays ridges characteristic of rotational bands with different energy separations of 96± and 72± keV for the energy regions of 660 to 840 keV and 975 to 1170 keV, respectively. The separation of these ridges remains constant in both energy regions. The dynamical moments of inertia are θ⁽²⁾ =83±3 and 111±5 ?²/MeV, respectively. The latter value suggests superdeformation in¹⁸⁰0s with an axis ratio c/a=1.76 (β₂ ?0.64) at high spins.     

Temperature dependance of the fundamental absorption edge in CdTe

Optical measurements made on CdTe put in light an extrinsic transition previously used to determine the interband edge of this compound. The donor level involved has a depth of 30 meV inside the bandgap at 77°K and of 60meV at 300°K. The value obtained for its temperature coefficient, suggests an association of this level with the L minimum of the conduction band.Also, determined is the true optical bandgap of CdTe between many conflicting results. One obtains: E_g = 1.529 meV with a temperature coefficient of ?3.10^?4eV/°K.     

Symmetry enforced gauge invariance of nuclear magnetic shielding constants

E.S.R. experiments performed at 1·3 K by optical detection are reported for the photo-excited triplet state of palladiumporphin in a single crystal of n-octane, and the observation of a level anticrossing signal is described.

In the crystal the orbital degeneracy of the ³ E _u state of the free molecule is lifted by the crystal field and in n-octane the energy difference between the two orbital components |x> and |y> is found to be 58 ± 2 cm^-1. The spinorbit coupling (SOC) and the orbital Zeeman interaction couple the triplet manifolds of |x> and |y>, and for a proper understanding of the magnetic properties of these states it is necessary to work in the basis of the six spin-orbit functions deriving from the ³ E _u state of the free molecule. It is shown that either of the two triplet states can be described by an effective spin hamiltonian of the common form and expressions for the zero-field parameters D and E and the principal values of the g tensor are given. The experimental values of the parameters in the lowest triplet state are D = -24·38 ± 0·03 GHz, |E| = 320 ± 60 MHz, g _‖ = 1·677 ± 0·001 and g _⊥ = 1·989 ± 0·002. The matrix element of the SOC connecting the |x> and |y> triplet manifolds amounts to qZ = 15 ± 3 cm^-1 and the vibronic orbital angular momentum (in units of ?) in the ³ E _u state of the free molecule to qΛ = 1·5 ± 0·3. A tentative value of 0·63 for the orbital reduction factor q is obtained by comparison with a theoretical estimate of Λ. The value of q is indicative of weak Jahn-Teller coupling.     

A calculation of valence band masses,exciton and acceptor energies and the ground state properties of the electron-hole liquid in cubic SiC

The Luttinger parameters of cubic SiC are determined by using a modified Lawaetz approach, including the hole-phonon coupling for small spin—orbit interaction: γ¹₁ = 2.817, γ¹₂ = 0.508, γ¹₃ = 0.860, κ¹ = -0.41. Revised ground state calculations of the electron-hole liquid, including the nonparabolic valence band dispersion, for conflicting theories of the electron-phonon interaction, yield a good agreement between the ?¹₀-approximation and experiment. The calculated ground state binding energy of the free exciton and of the point-charge acceptor are 26.7 and 179 meV respectively. These calculations yield a revised value of the band gap energy E_g = 2.416 eV.     

The motions of hydrogen impurities in α-Palladium-hydride

The intensity distribution of inelastically scattered thermal and hot neutrons on hydrogen impurities in α-palladium hydride has been studied as a function of concentration, temperature, momentum transfer and different annealing procedures. In up-scattering experiments the first and second harmonics appear at E₁^H = (66 ± 4) me V and E₂^H = (135 ± 15) meV respectively, and the hydrogen band modes have a frequency distribution as expected from measured dispersion curves for pure palladium. For deuterium the first harmonic appears at E₁^D = (48 ± 4) meV. The width of the hydrogen local mode E₁^H changes from 30 to 20 me V and its position from 63 to 66 meV, when the hydrogen concentration is altered from 2.7 to 0.2 at.%. After an extended annealing procedure and at the lowest concentration of 0.2 at.%, the local mode appears in down-scattering experiments at E₁^H = (68.5 ± 2) meV with a full width at half height ΔE₁^H = 4 meV, which is purely instrumental. For higher concentrations and insufficient annealing of the sample, cluster of hydrogen atoms are formed even in the α-phase, as indicated by the increasing width of the local mode. The peak intensity of the E₁^H mode decreases upon changing the temperature from 423 to 673°K. Upon changing the direction of the k-vector from the [1,0,0]- to the [1,1,0]-direction, the peak intensity of the local mode decreases by a factor of ten. These observations indicate the existence of anhannonic effects along the [l,l,0]-direction.     

Magnetoreflectance of the Γ6 – Γ8 exciton ground state in cubic ZnSe

Magnetoreflectance measurements on the ground state of the Γ₆ – Γ₈ free exciton in cubic ZnSe in magnetic fields up to 18 T are reported. The splitting between the |1, ±1〉 states was derived from the measured difference spectrum between σ⁺ and σ^--polarized reflectance in Faraday configuration. The splitting between the two states corresponding to |2, 0〉 and |1, 0〉 at B = 0 was determined by means of a lineshape analysis. We derive an electron g-factor g = 1.48 ± 0.25, in reasonable agreement with existing k · p calculations, and obtain an effective hole g-value $\text{K}\text{?}\text{= -0.26±0.06}$. In addition, we find an upper limit for the short range electron-hole spin exchange energy Δ ? 0.1 meV, which is considerably smaller than values, which is considerably smaller than values reported in the literature, but agrees with recent results on ZnTe obtained by uniaxial stress and also magnetoreflectance measurements.     

Wavelength modulated absorption in SiC

Wavelength modulated absorption spectra of the free excitons in 6H, 15R and 3C SiC have been measured. The spin-orbit splitting of the valence bands of the uniaxial and cubic polytypes are found to be 7 and 10 meV respectively. Using a new value for the exciton binding energy of 27 meV, an improved value of the fundamental gap of cubic SiC, E_g = 2.417 eV, is derived. Due to the small spin-orbit splitting, the valence bands are highly non-parabolic at low energies.     

Spin-wave scattering from A γ-Fe47Mn53alloy

Spin waves in the antiferromagnetic alloy γ-Fe_0.5Mn_0.5 have been studied at $\text{295° K(}\text{T}\text{T}{}_{\mathrm{N}}\text{= 0.63)}$ by the inelastic neutron scattering technique. We observed an isotropic dispersion and obtained a value for the spin-wave velocity of 255 ± 30 meV Å (3.88 ± 0.50 × 10⁶ cm/sec), which is the order of the spin-wave velocity in Cr (a typical itinerant antiferromagnet). The energy gap at q = 0 was found to be 7.0 ± 0.5 meV. These results suggest the existence of a long-range spin ordering in the conduction electrons of this alloy.     

Zeeman spectroscopy of the 4 Eu → 2 B 1g phosphorescence of copper porphin in an n-alkane single crystal

The phosphorescence spectrum of the metastable ⁴ E_u state of copper porphin in single crystals of n-octane (C₈) and n-decane (C₁₀) has been studied between 2·3 and 35 K, with and without a magnetic field B. The crystal field splitting between the orbital components observed at 35 K is δ = 30·3 ± 0·3 (C₈), 13·8 ± 0·2 cm^-1 (C₁₀). From the Zeeman shifts we derive the effective orbital angular momentum Λ′ = 0·8 ± 0·2 (C₁₀), the spin-orbit coupling parameter |Z′| = 1·5 ± 1·0 cm^-1 (C₁₀), the spin-spin dipolar interaction parameters D = -0·1 ± 0·2 cm^-1 (C₈, C₁₀) and |E| = 0·31 ± 0·03 cm^-1 (C₈, C₁₀), and the g-factors g _∥ = 2·14 ± 0·04 (C₈, C₁₀) and g _⊥ = 2·00 ± 0·03 (C₈, C₁₀).     

The effect of fast neutron irradiation on the optical modulation spectra of GaAs

The electroreflectance and wavelength-modulated reflectance spectra of GaAs were measured before and after several reactor irradiation periods. High resistivity n type GaAs crystals were irradiated at a temperature between 300 and 310 K up to a fast neutron fluence of 3.3 × 10¹⁷n/cm². The E₀ and E₀+Δ_o peaks shift nonlinearly toward lower energy, the change reaching a maximum value of about ? 50 meV at 10¹⁷n/cm². At this fluence an additional peak appears at 1.33 eV. The E₁ and E₁+Δ₁ peaks move almost linearly toward higher energy with increasing fast neutron fluence, the shift being about + 25 meV at 2 × 10¹⁷n/cm². The results are discussed taking into account infrared absorption measurements and the calculations made by McNichols, Hayes and Ginell concerning the metallic GaAs precipitates. The effect of possible internal stress produced by the fast neutron bombardment on the modulation spectra is also discussed.     

Determining potential energy constants for atom- and molecule-surface interactions

Methods developed for diatomic molecule spectroscopy are adapted for use in analysing the energies of atom-surface bound states in order to determine certain features of the surface-averaged potential energy function. In cases for which appropriate data are available, these simple graphical methods can yield a model-independent estimate of the potential well depth e, a value for the coefficient (C₃) of the long-range z^?3 term in the atom-surface potential, and estimates of both the total number of bound states and the energies of any unobserved levels lying near the dissociation limit. Application of these techniques to the data for atomic hydrogen on (001)LiF and NaF and for atomic helium on (001)LiF yielded: ? = 18.6(±1.0), 18.2 (±3.6) and 8.6(±0.8) meV, and C₃ = 250(±90), 180(±110) and 95(±40) meV ų, respectively. Application of this approach to the data for molecular hydrogen on (001)LiF led to a new set of vibrational assignments and showed that ? = 37(±4) meV, and that the H₂ and D₂ data of O'Keefe et al. and the H₂ binding energies which Tsuchida obtained from the data of Frisch and Stern are all internally consistent.     

Optical characterization of nano-structured Cu2ZnSnS4 thin films deposited by GLAD technique

In this paper, Cu₂ZnSnS₄ (CZTS) thin films were elaborated at room temperature by thermal evaporation method using Glancing Angle Deposition (GLAD) technique at different incident angles γ = 00°, 20°, 40°, 60°, 75° and 85°. XRD, Raman scattering analysis, (SEM) and UV-Visible-NIR spectroscopy were used to characterize the crystalline structure, morphology and optical properties of CZTS samples. The results have showed that the ellipsometric analysis leaded to an optical anisotropy due to the structural anisotropy for CZTS samples deposited at γ = 85°. All Cu₂ZnSnS₄ samples exhibited a high absorption coefficient (α > 10⁴ cm⁻¹) and a direct optical transition varied between 1.48 eV and 2.05 eV for CZTS thin films deposited at γ = 00° and 85°, respectively. The value of the Urbach energy increased with incident angle, indeed, its value increased from 58 meV (γ = 00°) to 604 meV (γ = 75°) and decrease to be 368 meV for γ = 85°. This result is correlated with the Raman analysis. From transmittance data of CZTS thin films deposited at γ = 00°, 20° and 40° Swanepoel's method was used, to estimate the refractive index n. It allows us, using the Wemple-DiDomenico and Spitzer-Fan models, to calculate other optical parameters such as the oscillator energy E₀, dispersion energy E_d, zero frequency refractive index n₀, high frequency dielectric constant ε_∞ and the electric susceptibility χ_e. On the other hand, to have an idea about the evolution of the nonlinear optical character, the nonlinear susceptibility χ⁽³⁾ and the nonlinear refractive index n₂ of CZTS thin films deposited at γ = 00°, 20° and 40° were investigated. Ellipsometric measurements of CZTS thin films has leaded to an optical anisotropy for γ = 85°. In addition, the generalized ellipsometry in Jones formalism have proved this property, which can be related to the nano-columnar slanted structure as revealed by (SEM) analysis.     

Photoluminescence measurements of the 1.55 eV band of Ge doped AℓxGa1−xAs

The photoluminescence of the 1.55 eV band of Ge doped A?_xGa_1?xAs, with x=0.30–0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with ?ω_q = 35±2 meV and ?ω_q = 45±2 meV are found for the optical band, yielding a zero phonon transition energy = 1.73±0.02 eV and a Franck-Condon shift = 0.17–0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17±0.04 eV. Possible mechanisms for the radiative transitions are discussed.     

The location and shape of the conduction band minima in cubic silicon carbide

We have measured the inter-bound state excitation spectrum of the N_C donor in cubic β-SiC through the ‘two-electron’ transition satellites observed in the luminescent recombination of excitons bound to neutral N donors. Transitions are seen to p as well as s-like donor states although the transition oscillator strength is derived from interaction with the impurity core since parity is conserved through inter-valley scattering by p-like X phonons. The Zeeman splitting of a luminescence line involving the 2p± donor state yield the electron mass parameter m_t = 0.24 ± 0.01 m₀. This and the directly measured energy separations of the 2p₀ and 2p± states yields m_t/m₁ = 0.36 ± 0.01 with the static dielectric constant K = 9.92 ± 0.1. Mutually consistent central cell corrections of 1.1 and 8.4 meV are observed for the 2s(A₁) and 1s(A₁) donor states, the latter being in agreement with a recent estimate from electronic Raman scattering by Gaubis and Colwell. The ionization donor energy of the N_C donor, 53.6 ± 0.5 meV is consistent with earlier, less accurate estimates from donor-acceptor pair and free to bound luminescence. There is no evidence for a ‘camel's back’ conduction band structure in cubic SiC, unlike GaP. The two-phonon sidebands of the N_C donor exciton luminescence spectrum in SiC can be constructed by X and Г phonons only.