Influence of the surface on the quantum P.E.M. effect in InP

The photoelectromagnetic effect of InP is studied in quantizing magnetic fields at 4·2 K in an energy range 1·4–1·5 eV for linearly polarized light. Depending on the sample surface condition two types of spectral oscillations may appear, those associated with interband transitions between Landau levels or the LO phonon type usually seen in photoconductivity. An analysis of the spectral oscillations gives: E₀ = 1·423±0·001 eV; Δ₀ = 0·102±0·006 eV; hω_L = 0·036 eV.     

Infrared modulated reflectance spectra of n and p type gallium antimonide and n type indium antimonide

We have observed the modulated reflectance spectra of n and p type GaSb at 300, 80, and 5 K from 0.56 to 2 eV. The modulated reflectance of intrinsic n type InSb was measured at 80 K from 0.2 to 2 eV. The “dry sandwich” vapor deposition technique was used to make the electroreflectance (ER) samples. The low-temperature spectrum of the undoped p type GaSb sample shows three peaks at the band edge that could be associated with transitions from the top of the valence band, the light (0.903 eV) and heavy (1.014eV) hole state Fermi levels to the conduction band. The energies of the observed peaks are in agreement with the Fermi level determination from Hall effect and Faraday rotation measurements. This modulation mechanism is based on band population effects. The ER signal of InSb under flatband condition at 80 K has five half oscillations at the direct band gap. The contribution of piezoelectric strain to ER is present since the dc bias required to achieve flatband condition is different at the band gap than at E₁. The ER signal corresponding to the direct gap energy E₀ and to the spin-orbit energy E₀ + Δ₀ was determined in the n and p type samples of GaSb at different temperatures. We have measured the intrinsic energy gap in GaSb at room temperature. E_g = 0.74 eV. The corresponding spin-orbit splitting was found to be Δ₀ = 0.733 ± 0.002 eV.     

Investigation of surface self-diffusion of Ni atoms on the Ni(100) plane by means of work function measurements and Monte Carlo calculations

A novel method is presented to study migration of adsorbed metal atoms on a clean (hkl) surface of a metal substrate. The system used was Ni on Ni(100). We make use of the assumption that each single step of random walk motion of an individual adatom on the metal substrate refers to an activation energy ΔE_if (indices i and f giving the number of occupied nearest neighbour sites in the initial and final position respectively). Furthermore, we assume that the dipole moment p_v of an adatom is determined by the number v of occupied nearest neighbour sites. Via their dipole moments the adsorbed atoms induce a change of work function ΔΦ of the substrate metal, ΔΦ being related to the average dipole moment per unit area by the Helmholtz equation. To measure ΔΦ we use a pendulum device. At fixed low coverage θ the variation of ΔΦ with temperature T has been calculated numerically within the framework of a Monte Carlo simulation (MCS) model, using various activation energies ΔE_if and dipole moments p_v as input parameters. By fitting these data to the experimental curves we could derive the following dipole moments and activation energies: p₀ = 0.45 ± 0.05 D, p₁ = 0.36 ± 0.05 D, p₂ = 0.27 ± 0.05 D, p₃ = 0.18 ± 0.05 D, ΔE₀₀ 0.60 ± 0.02 eV, ΔE₁₀ = 0.70 ± 0.025 eV, ΔE₂₁ = 0.80 ± 0.05 eV, ΔE₂₀ = 0.90 ± 0.05 eV. We compare these results with those of other workers.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

First direct observation of strong interaction spin-orbit effects in antiprotonic atoms

The strong ¯p-nucleus spin-orbit interaction was investigated in a measurement of the strong-interaction effects of the 9→8 transition in ¯p ¹⁷⁴Yb at the Low-Energy Antiproton Ring (LEAR) at CERN. This measurement was part of an experimental programme where, for the first time, the fine-structure components of the last observable X-ray transition in a ¯p atom, which carries information on the strong ¯p-nucleus interaction, were resolved and studied individually. The observed splitting ΔE _exp=2408±26 eV consists of the electromagnetic fine-structure splitting ΔE _FS=2350 eV and an additional splitting Δ?=58±26 eV. In addition, one finds a significant difference in the level widths of Δ=195±59 eV with the larger value_?=1216±41 eV for the lower fine-structure level. This experiment follows an earlier measurement on ¯p ¹³⁸Ba, where the transition 8→7 is influenced by the strong interaction. In this case, however, the fine-structure components could not be resolved. The results for¹⁷⁴Yb may be attributed to a spin-orbit (LS) term in the complex strong-interaction potential.     

Landau transitions at higher gaps in InSb and GaSb

Landau levels have been resolved at the E₁ + Δ₁ gap in InSb and at the E₁ edge in GaSb. Transverse reduced masses of 19 ± 3 and 21.4 ± 1.5 have been obtained at the respective edges. Using band gaps determined from the experiment, the spin-orbit splitting Δ₁ has been measured as 0.500 ± 0.013 eV in InSb. Combined with a measurement of the zone center spin-orbit splitting, this gives a ratio of 0.623 ± 0.02 of slightly less than $\text{2}\text{3}$.     

Reflectance modulation in HgTe

Three kinds of modulation techniques, electroreflectance, thermoreflectance and piezo-reflectance are employed to determine energy band parameters in HgTe in the range of photon energy 0.5 to 4 eV. The value of the spin-orbit splitting Δ₀ is determined to be 1.08 ± 0.02 eV from the measurement of electroreflectance with the use of the electrolyte technique and is assigned with the help of electroreflectance measurement on Cd_xHg_1?xTe alloys. In thermoreflectance and piezoreflectance near E₁, various information is obtained, such as broadening parameters, the energy gaps, the location of the transition edge and the ratios of deformation potential constants D₁⁵/D₁¹ = ? 1.4 ± 0.5 and D₃⁵/D₃³= 2.3 ± 0.8 at room temperature.     

Untersuchung der vier ersten angeregten Zustände des6Li-Kernes durch Elektronenstreuung

Inelastic electron scattering cross sections were measured for energies below 60 MeV and momentum transfersq between 0.2 and 0.6 fm^?1. Ground state radiative widths Γ _γ ⁰ and transition radiiR _tr were deduced. 2.18 MeV: Γ _γ ⁰ (E2)=(4.40±0.34) · 10^?4 eV,R _tr=(4.28±0.39)fm; 3.56MeV: Γ _γ ⁰ (M1)=(8.31±0.36)eV,R _tr=(2.90±0.10)fm; 4.27 MeV: Γ _γ ⁰ (E2)=(5.4±2.8) · 10^?3 eV,R _tr=(3.4±1.2) fm. The excitation of the 5.37 MeV level shows a transverse angular dependence.     

Virtual bound states in AuTi alloys

We have measured the optical absorption of dilute AuTi alloys for photon energies from 0.1 to 4.5 eV. The extra absorption we observe below the Au interband threshold can be accounted for if the Ti impurities form virtual bound states with half-width at half height δ ～ 0.6 ± 0.2 eV centered E_d ～ 0.5 ± 0.2 eV above the Fermi level and containing 2.7 ± 0.3 electrons.     

Reflactive derivee en modulation de longueur d'onde au voisinage du seuil fondamental dans les alliages Zn1−xMgxTe a 300 K

The variation of the fundamental edge E₀ of the pseudo-binary alloy system Zn_1?xMg_xTe is studied by wavelength modulated reflectivity at 300 K in the range : 0<x<0.41. The experimental bowing parameter c = 0.6 ± 0.05 eV is evaluated from the evolution with x of three structures in the spectra obtained in the vincinity of E₀. It is much greater than the one we calculate with Hill's formula c = 0.067 eV. This suggests a superposition of electron-hole interaction effect on the band to band process at room temperature.     

Band alignment at sputtered ZnSx O1–x/Cu(In,Ga)(Se,S)2 heterojunctions

Valence band offsets ΔE_VBM at ZnS_x O_1–x/Cu(In,Ga)(Se,S)₂ (CIGSSe) heterojunctions have been studied by photoemission spectroscopy (XPS, UPS) as a function of composition x in sputtered ZnS_x O_1–x films. In the composition range from ZnO to ZnS we found ΔE_VBM between –(2.1 ± 0.3) eV and –(0.8 ± 0.4) eV, respectively. Considering the optical band gaps, the conduction band offsets ΔE_CBM range from –(0.1 ± 0.3) eV to +(1.4 ± 0.4) eV. These results suggest that sputtered ZnS_x O_1–x is suitable as substitution for the CdS buffer and ZnO window layers in standard chalcopyrite‐based solar cells. Current–voltage characteristics of the solar cells have been investigated as a function of the composition x. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Some nuclear and atomic properties of201Hg determined by conversion electron spectroscopy

Conversion electron measurements with an electrostatic spectrometer proved the existence of the 1,565±6 eV transition in²⁰¹Hg. The conversion intensity ratios,N ₁/N ₂ =1.2±0.2,N ₁/N ₃=1.1±0.2,N ₂/N ₃=0.92±0.15,N ₄/N ₃=0.03± 0.02 andN ₅/N ₃=0.04 ±0.02 were determined. These values agree with our calculations for the M1±E2 multipolarity with theE2/M1 mixing ratioδ ²=(l.l±0.3)xl0^?4 and exclude all pure multipolarities withL≦4. The total conversion coefficient for the aboveM1 +E2 mixture was evaluated to be (4.7±0.7)× 10⁴. The reducedB(M1, 1/2→3/2) probability was derived to be (3.9 ±1.2) × 10^?3 (e?/2Mc)². The natural widths of theN-subshell conversion lines in mercury were found to beΓ(N ₁)=8.3± 1.5,Γ(N ₂) =5.8±1.5 and Γ(N ₃) =6.5±1.0 eV. Monte Carlo calculations of electron scattering in matter yielded the conversion line shapes in qualitative agreement with the experiment.     

Final state band gap effects in UV photoemission from Cu(111)

The crystal momentum dependence of the final states involved in bulk photoemission from the sp-bands through a (111) surface of copper was investigated with a photon energy hν = 11.7 eV. Plane wave hybridization was observed and is described in terms of a 2-OPW model Hamiltonian with parameters determined to be V₀=7.1±0.1 eV for the inner potential and E_g = 1.6 ± 0.2 eV for the energy gap. The model is also shown to account for a rapid intensity variation with crystal momentum of the form |a_G(k)|², where a_G(k) is a plane wave amplitude of the final state wave function.     

High-resolution electroreflectance measurements of GaAs

High-resolution surface-barrier electroreflectance measurements are reported for GaAs, taken at 4.2 K in the Schottky barrier configuration. Interference effects between the bulk and space-charge regions are seen at the n = 1 exciton line for both E₀ and E₀ + Δ₀ transitions. We calculate the value μ_T = (0.055 ± 0.008) m_e for the transverse mass of the E₁ + Δ₁ transition from Franz-Keldysh oscillations observed at high fields. The E'₀ structure is resolved into separate critical points of Γ and Δ symmetry. Threshold and broadening energies are obtained at 4.2 K for the E₀,E₀, E₀ + Δ₀, E₁, E₁ + Δ₁, E'₀ (Γ and and E₂ (Σ and X) critical points.     

Fundamental reflectivity spectra of Hg1−xMnxTe mixed crystals in the 1.7 to 3.5 eV energy range

The room temperature reflectivity coefficient R(E) for the mixed crystals Hg_1?xMn_xTe (x up to 0.57) in the energy range 1.7 to 3.5 eV was investigated. Two distinct maxima E₁ and E₁ + Δ₁ connected with the transitions in the critical points on the [111] direction of the Brillouin zone for the samples with x up to 0.3 and the more diffused structure of R(E) for the samples with x > 0.3 was observed. A quadratic dependence of E₁ and E₁ + Δ₁ transition energy vs alloy composition with x up to 0.3 was found, with bowing coefficient c = 1.21 ± 0.02 and 1.06 ± 0.02 respectively. The energy variation of an additional shoulder probably connected with the e₁ transitions at L point of the Brillouin zone is also reported.     

The band structure and optical properties of the CdxHg1-xTe mixed crystals

The band structure of the Cd_xHg_1?xTe mixed crystals have been computed on the basis of tight-binding interpolation scheme and virtual crystal approximation. The bowing parameters of main energy gaps have been calculated as well as composition dependence of position of E₁ and E₁ + Δ₁ maxima in reflectivity spectra. Good agreement with previously reported experimental data has been found.     

Estimation of the energy of the electron-photon component of cosmic rays on the basis of data for Cherenkov light from ultrahigh-energy extensive air showers

The energy fraction E _em/E ₀ dissipated to the electron-photon component of extensive air showers (EASs) for E ₀=10¹⁵?10¹⁹ eV is estimated using data on Cherenkov radiation and charged particles from the Yakutsk EAS array. The results are compared with models with different dissipations to the electron-photon component and with calculations for various primary nuclei. In the energy range 10¹⁵?10¹⁶ eV and 10¹⁸?10¹⁹ eV, the ratio E _em/E ₀ is equal to 77 ± 2 and 88 ± 2, respectively, in agreement with the mixed and proton contents of primary cosmic rays in the former and latter energy ranges, respectively.     

Resonant neutron capture in 40Ca

The neutron capture cross section of ⁴⁰Ca has been measured with ≈ 0.2 % energy resolution below E_n = 300 keV. Resonance parameters have been extracted for many new p- and d-wave resonances. Gamma-ray spectra were also measured following capture in one doublet and two resolved resonances below 50 keV. Strong feeding of low-lying p-wave levels was observed in all cases. Calculations showed that valence transitions were inadequate to account for the observed dominance of these transitions and a further mechanism is required. The average resonance parameters obtained from the data are as follows: 〈D〉 = 37 + 4keV, 10⁴S₁ = 0.16 ± 0.05, 10⁴S₂ = 2.0 ± 0.7. The average radiative widths and standard deviations of their distributions were found to be strongly l-dependent as follows: 〈Γ_γ〉_s = 1.5 ± 0.9 eV, 〈Γ_γ〉_p = 0.36 ± 0.09 eV and 〈Γ_γ〉_d = 0.7 ± 0.4 eV.     

Photoluminescence in germanium with a quasi-equilibrium dislocation structure

The dislocation-related photoluminescence of n-Ge single crystals with a quasi-equilibrium structure of 60° dislocations is investigated at a temperature of 4.2 K. It is shown that the dislocation-related photoluminescence spectra are described by a set involving from 8 to 13 Gaussian lines with a width of less than 15 meV. With due regard for the data available in the literature, the Gaussian lines with maxima at energies in the range 0.47 < E _m ≤ 0.55 eV are assigned to the emission of 90° Shockley partial dislocations involved in quasiequilibrium segments of 60° dislocations with different values of the stacking fault width Δ (Δ = Δ₀, Δ < Δ₀, and Δ > Δ₀). It is revealed that the d8 line at the energy E _m = 0.513 eV, which corresponds to the emission of straight segments with the equilibrium stacking fault width Δ₀, dominates in the photoluminescence spectra only at dislocation densities N _D < 10⁶ cm^?2. As the dislocation density N _D increases, the intensity of the d8 line decreases with the d7 line (E _m ≈ 0.507 eV) initially and the d7 and d6 lines (E _m ≈ 0.501 eV) then becoming dominant in the photoluminescence spectrum. The d7 and d6 lines are attributed to the emission of segments with stacking fault widths Δ < Δ₀. Possible factors responsible for the formation of stacking faults with particular widths Δ ≠ Δ₀ for quasi-equilibrium dislocations are discussed.     

Intensities of rotational lines in first overtone bands for axially symmetric molecules of the group C3v

The interaction of vibration and rotation is considered in the computation of the intensities of rotational lines in the first overtone bands of axially symmetric molecules of the group C_3v. The calculation utilizes the contact transformation method through first order of approximation as outlines by Hanson and Nielsen. General formulas for the intensities of the lines in the first overtone bands 2ν_n and 2ν_m are obtained, where n and m denote normal modes of species A₁ and E, respectively. It is found that to this order of approximation the usual selection rules ΔJ = 0, ±1 and ΔK = 0 are observed for the parallel overtone band 2ν_n. For the overtone band 2ν_m, the selection rules are more complicated, being ΔJ = 0, ±1; Δl_m = 0 and ΔK = 0, Δl_m = ±2 and $\text{Δ}\text{K = ?1}$, or Δl_m = ±2 and ΔK = ±2.