Kinetic study of chlorine behavior in the waste incineration process

The waste incineration atmosphere was simulated as HCl/H₂O/O₂/CO₂/N₂ in order to experimentally study chlorine behavior as temperature ranges from 1173 to 1473 K and residence time varies. The results show that Cl radicals, produced by the decomposition of HCl at high temperature, mainly recombine to form Cl₂ and HCl at the quenching section. It was found that temperature, residence time, cooling rate and feeding gas composition influence Cl₂ concentration. To thoroughly understand this reaction system, a kinetic model was developed and validated against experimental results. The key reactions and main pathway were found out with the use of sensitivity and rate of production analysis (ROP). The reaction HCl + O₂ → Cl + HO₂ was shown to initiate the reaction system, and it was found that a significant amount of Cl₂ was simultaneously produced by the following high temperature reaction: Cl + HOCl → Cl₂ + OH. In the cooling process, the main consumption reactions of Cl radicals were H₂O + Cl → HCl + OH, OH + Cl → HCl + O and Cl + Cl + M → Cl₂ + M. Among these, the first two reactions can be used to explain the effect of H₂O on the concentration of Cl radical at high temperature. In addition, the influence of the quenching rate on the distribution of chlorine was found to occur because of the varying effects that temperature change causes to the different Cl radical consumption reactions.     

Enhanced gas-sensing behaviour of Ru-doped SnO2 surface: A periodic density functional approach

A theoretical study on Ru-doped rutile SnO₂(1 1 0) surface has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA-RPBE) level with a periodic supercell approach. Electronic structure analysis was performed based on the band structure and partial density of states. The results provide evidence that the electronic structures of SnO₂(1 1 0) surface are modified by the surface Ru dopant, in which Ru 4d orbital are located at the edge of the band gap region. It is demonstrated that molecular oxygen adsorption characteristics on stoichiometric SnO₂(1 1 0) surface are changed from endothermic to exothermic due to the existence of surface Ru dopant. The dissociative adsorption of molecular oxygen on the Ru_5c/SnO₂(1 1 0) surface is exothermic, which indicates that Ru could act as an active site to increase the oxygen atom species on SnO₂(1 1 0) surface. Our present study reveals that the Ru dopant on surface is playing both electronic and chemical role in promoting the SnO₂ gas-sensing property.     

Study of nickel silicide formation on Si(1 1 0) substrate

Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 °C annealing for Si(1 0 0) substrate, but a higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate, which is demonstrated by X-ray diffraction (XRD) and Raman scattering spectroscopy. The higher formation temperature of NiSi is attributed to the larger Ni₂Si grain size formed on Si(1 1 0) substrate. Ni silicided Schottky contacts on both Si(1 0 0) and Si(1 1 0) substrates were also fabricated for electrical characteristics evaluation. It clearly reveals that the rectifying characteristics of NiSi/n-Si(1 1 0) Schottky contacts is inferior to that of NiSi/n-Si(1 0 0) Schottky contacts, which is attributed to a lower Schottky barrier height and a rougher contact interface. The formation kinetics for nickel silicide on Si(1 1 0) substrate is also discussed in this paper.     

Adsorption of O2 on the CaO and SrO (1 0 0) surfaces: A first-principles study

First-principles calculations based on density functional theory (DFT) have been performed to investigate the adsorption of O₂ on the CaO and SrO (1 0 0) surfaces. The present results indicate that the bridge-top site for both the CaO and SrO (1 0 0) surfaces is the most favorable site for O₂ adsorption, with predicted adsorption energies of 1.437 eV and 1.236 eV, respectively. Detailed analysis of density of states, Mullikan population and vibration frequency are performed. The calculated results imply the possible formation of a peroxo (O₂²⁻) when O₂ is adsorbed with the bridge-top mode on both CaO and SrO (1 0 0) surfaces.     

A density functional theory study of formaldehyde adsorption on ceria

Molecular adsorption of formaldehyde on the stoichiometric CeO₂(1 1 1) and CeO₂(1 1 0) surfaces was studied using periodic density functional theory. Two adsorption modes (strong chemisorbed and weak physisorbed) were identified on both surfaces. This is consistent with recent experimental observations. On the (1 1 1) surface, formaldehyde strongly chemisorbs with an adsorption energy of 0.86 eV to form a dioxymethylene-like structure, in which a surface O lifts from the surface to bind with the C of formaldehyde. A weak physisorbed state with adsorption energy of 0.28 eV was found with the O of formaldehyde interacting with a surface Ce. On the (1 1 0) surface, dioxymethyelene formation was also observed, with an adsorption energy of 1.31 eV. The weakly adsorbed state of formaldehyde on the (1 1 0) surface was energetically comparable to the weak adsorption state on the (1 1 1) surface. Analysis of the local density of states and charge density differences after adsorption shows that strong covalent bonding occurs between the C of formaldehyde and surface O when dioxymethylene forms. Calculated vibrational frequencies also confirm dioxymethylene formation. Our results show that as the coverage increases, the adsorption of formaldehyde on the (1 1 1) surface becomes weak, but is nearly unaffected on the (1 1 0) surface.     

Surface atomic distribution and water adsorption on Pt-Co alloys

Density functional theory is used to study surface atomic distributions on slabs of PtCo and Pt₃Co overall compositions, as well as water molecule adsorption on PtCo(1 1 1) and Pt-skin structures. Pt-rich surfaces are energetically favored under vacuum in the PtCo and Pt₃Co alloys. The adsorption trend on the studied structures agrees with the d-band model, with stronger adsorption at higher surface Co composition. The most stable adsorption site for a water molecule on PtCo surfaces is on top of Co atoms, with the dipole vector parallel to the surface. This water/surface interaction is as strong as that of water molecule on Pt(1 1 1), whereas bonding to Pt-skin monolayers is found much weaker than that on Pt(1 1 1). It is found that water interacts mainly through its 1b₁ and 3a₁ orbitals with d orbitals of the Pt(1 1 1), PtCo(1 1 1) and Pt-skin surface atoms. Compared to the sum of the electron densities of the separated systems, the electron density of the water/surface gets depleted along O-Pt on Pt-skin surfaces while it becomes richer in the O-Co bonding region of PtCo.     

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 °C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E_α = 3.2 MeV, nuclear reaction analysis (NRA) at E_d = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.     

A computational study of H2 dissociation and CO adsorption on the PtML/WC(0 0 0 1) surface

We studied computationally the relative stability of Pt_ML/WC(0 0 0 1) [pseudomorphic monolayer of Pt(1 1 1) on WC(0 0 0 1)] interfacial structures using a density functional slab model approach. The work of adhesion was calculated for six different interfacial structures, taking into account both W- and C-terminations of the carbide. The results show that the optimal interfacial structure of Pt_ML/WC(0 0 0 1) is the W-terminated WC(0 0 0 1) with Pt atoms adhesion on the hcp site (W-hcp). The nature of metal/carbide bonding for the W-hcp interfacial geometry was determined on the basis of the partial density of states (PDOS). Adsorption of atomic hydrogen and dissociation of the hydrogen molecule on the W-hcp Pt_ML/WC(0 0 0 1) was investigated and compared to that on Pt(1 1 1). It is found that the most favorable H₂ dissociation channels need similar activation energies of 5.28 and 4.93 kJ/mol on Pt_ML/WC(0 0 0 1) and Pt(1 1 1), respectively, with the release of considerable reaction energies. Furthermore, adsorption of CO on the W-hcp Pt_ML/WC(0 0 0 1) and Pt(1 1 1) was also investigated. The results indicate that Pt_ML/WC(0 0 0 1) is much less susceptible to CO poisoning than Pt(1 1 1), especially at the low coverage of CO.     

Structure and adhesion of MoSi2/Ni interfaces: Evaluation of MoSi2 as an alternative bond coat alloy

We use density functional theory to evaluate the stability of molybdenum disilicide coatings on a nickel substrate, as a possible bond coat alloy for high temperature coating applications. We consider the MoSi₂(0 0 1)/Ni(1 1 1), MoSi₂(1 0 0)/Ni(1 1 1), and MoSi₂(1 1 0)/Ni(1 1 1) interfaces and predict quite strong (3.5-3.8 J/m²) adhesion of this metal-silicide ceramic to nickel. The origin of this strong adhesion is elucidated by examining the geometric and electronic structure of the interfaces. We predict that Mo and Si atoms at the interface primarily occupy Ni 3-fold hollow sites, the typical adsorption site on Ni(1 1 1). Projected local densities of states and electron density difference plots reveal a mixture of localized, covalent Si-Ni bonds and more delocalized metallic Mo-Ni bonding, as the origin of the strong interfacial bonding. As emphasized in our earlier work, creation of strong covalent bonds at interfaces results in very strong adhesion. Such strong adhesion makes MoSi₂ a potential candidate for use in thermal barrier applications, in conjunction with a yttria-stabilized zirconia topcoat.     

Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

Band offsets at the epitaxial anatase TiO2/n-SrTiO3(0 0 1) interface

We have used high-energy resolution X-ray photoelectron spectroscopy to measure valence band offsets at the epitaxial anatase TiO₂(0 0 1)/n-SrTiO₃(0 0 1) heterojunction prepared by molecular beam epitaxy. The valence band offsets range between −0.06 ± 0.05 and +0.16 ± 0.05 eV for anatase thicknesses between 1 and 8 monolayers and three different methods of substrate surface preparation, with no systematic dependence on film thickness. The conduction band offset (CBO) varies over a comparable range by virtue of the fact that anatase and SrTiO₃ exhibit the same bandgap (∼3.2 eV). In contrast, density functional theory predicts the VBO to be +0.55 eV. The lack of agreement between theory and experiment suggests that either some unknown factor in the interface structure or composition excluded from the modeling is influencing the band offset, or that density functional theory cannot accurately calculate band offsets in these oxide materials. The small experimental band offsets have important implications for the use of this interface for fundamental investigations of surface photocatalysis. Neither electrons nor holes are likely to become trapped in the substrate and thus be unable to participate in surface photocatalytic processes.     

Effects of N adsorption on the structural and electronic properties of SrTiO3(0 0 1) surface

The atomic configurations, bonding characteristics, and electronic structures of the N-adsorbed (directly and substitutionally) SrTiO₃(0 0 1) surface are studied by using first-principles method based on the density functional theory. From the analysis of the energetics and density of states, it is found that the stability of the directly adsorbed N depends on the relative position of N atom to the surface. To better understand the effects of the substitutionally adsorbed N on the surface, as an example, the behavior of Au atoms adsorbed on the N-substituted surface is discussed in detail. There is clearly a synergy effect between the substitution of N for O_s(I) and the adsorption of Au atoms on the SrTiO₃(0 0 1) surface.     

Ground-state properties of arsenic deposited on the Ge(0 0 1)(2 × 1) surface

We present results of ab initio calculations of structural, electronic and vibrational properties of the Ge(0 0 1) surface covered with a monolayer of arsenic. The fully occupied π_u bonding and π_g antibonding electronic states due to the As-As dimer formation are quite close in energy and their ordering is same as that found on the Si(0 0 1) surface. Using our calculated atomic and electronic structures, surface lattice dynamics was studied by employing a linear response approach based on density functional perturbation theory. A comparison of the phonon spectrum of the Ge(0 0 1)/As(2 × 1) surface with that of the clean Ge(0 0 1)(2 × 1) surface indicates the presence of several new characteristic phonon modes due to adsorption of As atoms.     

Theoretical study of hydrogen adsorption on the GaN(0 0 0 1) surface

Ab initio density functional theory, using the B3LYP hybrid functional with all-electron basis sets, has been applied to the adsorption of H on the (0 0 0 1) surface of wurtzite GaN. For bulk GaN, good agreement is obtained with photoemission and X-ray emission data for the valence band and for the Ga 3d and N 2s shallow core levels. A band gap of E_g = 4.14 eV is computed vs the experimental value (at 0 K) of 3.50 eV. A simple model, consisting of a (2 × 2) structure with 3/4-monolayer (ML) of adsorbed H, is found to yield a density of states in poor agreement with photoemission data for H adsorbed on surfaces prepared by ion bombardment and annealing. A new model, consisting of co-adsorbed Ga (1/4 ML) and H (1/2 ML), is proposed to account for these data.     

Radial inhomogeneities induced by fiber diameter in electrically assisted LFZ growth of Bi-2212

Superconducting polycrystalline BSCCO fibers of 2:2:1:2 nominal composition were grown by the electrically assisted laser floating zone (EALFZ) technique. An electric current density of 2.1 A cm⁻² was applied through the solid/liquid (S/L) interface. A net effect of the fiber diameter on the as-grown microstructure and on the final superconducting properties is observed. A higher critical current density (∼2520 A cm⁻²) results for the thinner fibers (? = 1.7 mm) comparing to the value (∼1065 A cm⁻²) found for the wider ones (? = 2.5 mm). The steep axial thermal gradient at the S/L interface in the thinner fibers is responsible for its superior texture degree, a crucial parameter for improved current transport properties. Moreover, a Cu-free Bi_x(Sr,Ca)_yO_z phase crystallizes preferentially from the melt in the wider fibers, acting as obstacles to the current flux.     

Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO₂. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10⁻⁵ Ω cm² and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500 °C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500 °C-annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500 °C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.     

Assignment of surface IR absorption spectra observed in the oxidation reactions: 2H + H2O/Si(1 0 0) and H2O + H/Si(1 0 0)

Infrared reflection absorption spectroscopy that used buried metal layer substrates (BML-IRRAS) and density functional cluster calculations were employed to investigate the water related oxidation reactions of 2H + H₂O/Si(1 0 0)-(2 × 1), 2D + H₂O/Si(1 0 0)-(2 × 1), and H₂O + H/Si(1 0 0)-(2 × 1). In addition to the oxygen inserted coupled monohydrides, which were previously reported in the former reaction system, we report several other oxidized Si hydride species in our BML-IRRAS experiments. Three new pairs of vibrational bands are identified between 900 and 1000 cm⁻¹. These vibrational frequencies were calculated using Si9 and Si10 cluster models that included all possible structures from zero to five oxygen insertions into the top layer silicon atoms using a B3LYP gradient corrected density functional method with a polarized 6-31G** basis set for all atoms. The three pairs of vibrational modes are assigned to the scissoring modes of adjacent and isolated SiH₂ with zero, one, and two oxygen atoms inserted into the Si back bonds. All the other newly observed vibrational peaks related to Si oxidation are also assigned in this study. The Si-O stretching bands observed in the reaction 2D + H₂O/Si(1 0 0)-(2 × 1) show an isotope effect, which suggests that in the system 2H + H₂O/Si(1 0 0)-(2 × 1) also, hydrogen atom tunneling plays an important role for the insertion of oxygen atoms into Si back bonds that form oxidized adjacent dihydrides.     

Driving force for the WO3(0 0 1) surface relaxation

The optimized structure of the WO₃(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO₂, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO₃ depends weakly on the distortions and tilting of the WO₆ octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10⁻² eV/Ų for the cubic ReO₃-like, c(2 × 2)O-terminated surface to 2.2 × 10⁻² eV/Ų for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO₃. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO₃(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides.     

Origin of ohmic behavior in Ni, Ni2Si and Pd contacts on n-type SiC

Ni, Ni₂Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature range of 750-1150 °C. The annealed contacts were analyzed before and after acid etching, and different features were found in unetched and etched contacts. Carbon left on the SiC surface after the acid etching of Ni₂Si contacts annealed at 960 °C was highly graphitized. In nickel contacts, the graphitization of interface carbon began at 960 °C and increased after annealing at higher temperatures. In palladium contacts, the onset of the interface carbon graphitization was observed after annealing at 1150 °C. For all three types of metallization, the minimal values of contact resistivity were achieved only when the sharp first-order peak at 1585 cm⁻¹ and distinct second-order peak at ∼2700 cm⁻¹ related to the presence of graphitized carbon were detected by Raman spectroscopy after the acid etching of contacts. The properties of unannealed secondary contacts deposited onto etched primary contacts were similar to the properties of the primary contacts unless carbon was selectively etched. The results show that ohmic behavior of Ni-based and Pd contacts on n-type SiC originates from the formation of graphitic carbon at the interface with SiC.     

Reaction mechanism for CO oxidation on Cu(3 1 1): A density functional theory study

The microscopic reaction mechanism for CO oxidation on Cu(3 1 1) surface has been investigated by means of comprehensive density functional theory (DFT) calculations. The elementary steps studied include O₂ adsorption and dissociation, dissociated O atom adsorption and diffusion, as well as CO adsorption and oxidation on the metal. Our results reveal that O₂ is considerably reactive on the Cu(3 1 1) surface and will spontaneously dissociate at several adsorption states, which process are highly dependent on the orientation and site of the adsorbed oxygen molecule. The dissociated O atom may likely diffuse via inner terrace sites or from a terrace site to a step site due to the low barriers. Furthermore, we find that the energetically most favorable site for CO molecule on Cu(3 1 1) is the step edge site. According to our calculations, the reaction barrier of CO + O → CO₂ is about 0.3 eV lower in energy than that of CO + O₂ → CO₂ + O, suggesting the former mechanism play a main role in CO oxidation on the Cu(3 1 1) surface.