Study of nickel silicide formation on Si(1 1 0) substrate |
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Authors: | Xiao GuoHao Yu Yu-Long Jiang Guo-Ping RuDavid Wei Zhang Bing-Zong Li |
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Institution: | ASIC and System State Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, China |
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Abstract: | Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 °C annealing for Si(1 0 0) substrate, but a higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate, which is demonstrated by X-ray diffraction (XRD) and Raman scattering spectroscopy. The higher formation temperature of NiSi is attributed to the larger Ni2Si grain size formed on Si(1 1 0) substrate. Ni silicided Schottky contacts on both Si(1 0 0) and Si(1 1 0) substrates were also fabricated for electrical characteristics evaluation. It clearly reveals that the rectifying characteristics of NiSi/n-Si(1 1 0) Schottky contacts is inferior to that of NiSi/n-Si(1 0 0) Schottky contacts, which is attributed to a lower Schottky barrier height and a rougher contact interface. The formation kinetics for nickel silicide on Si(1 1 0) substrate is also discussed in this paper. |
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Keywords: | 73 30 +y 68 60 Dv 85 40 Ls |
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