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1.
Ce:Lu2Si2O7闪烁晶体的结构和光谱特性   总被引:1,自引:0,他引:1       下载免费PDF全文
严成锋  赵广军  杭寅  张连翰  徐军 《物理学报》2005,54(8):3745-3748
采用中频感应提拉法生长出Ce:Lu2Si2O7(Ce:LPS) 晶体. 通过x射线粉 末衍射分析,晶体结构属单斜晶系的C2/m空间群. 光学显微镜下可观测到晶体的(110 )解理. 在室温下测试了Ce:LPS晶体的吸收光谱、激发光谱和发射光谱. 结果表明,Ce:LPS 晶体的吸收峰只有两个,分别位于302和349 nm,且与激发峰的位置一致,归因于Ce3+ 的4f1→5d1跃迁的特征吸收所致. 发射光谱具有Ce3+< /sup>典型的双峰特征 ,经Gaussian多峰值拟合,带状谱是由384和407 nm两个发射峰叠加而成,且后者的强度明 显高于前者. 关键词: 2Si2O7')" href="#">Ce:Lu2Si2O7 提拉法 晶体结构 光学 特性  相似文献   

2.
Pr3+‐doped Lu2Si2O7 (LPS:Pr) microcrystalline phosphor was prepared by the sol–gel method. We study the LPS:Pr luminescence properties under UV and X‐ray excitation within 80–500 K. The emission spectrum is dominated by fast 5d–4f band peaking at 261 nm having 16 ns decay time. By purely optical contactless methods we determine the energy barrier of 300 meV for thermal ionization of the Pr3+ 5d1 relaxed excited state in LPS host. The barrier is high enough to keep the room temperature quantum efficiency of the Pr3+ luminescence center close to unity. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

3.
Dong Y  Xu J  Zhao G  Yan C  Zhou G  Su L  Yang L  Qiu J  Lin L  Liang X  Li R  Xu Z  Ren Q 《Optics letters》2006,31(14):2175-2177
We found that Ce3+:Lu2Si2O7 single crystals could be excited at 800 nm by using a femtosecond Ti:sapphire laser. The emission spectra of Ce3+:Lu2Si2O7 crystals were the same for one-photon excitation at 267 nm as for excitation at 800 nm. The emission intensity of Ce3+:Lu2Si2O7 crystals was found to depend on the cube of the laser power at 800 nm, consistent with simultaneous absorption of three 800 nm photons. The measured value of the three-photon absorption cross section is sigma'3=2.44x10(-77) cm6 s2.  相似文献   

4.
掺铋BaF2晶体的制备及其近红外发光研究   总被引:1,自引:0,他引:1       下载免费PDF全文
通过温度梯度法制备了Bi2O3:BaF2以及BiF3:BaF2晶体.在Bi2O3:BaF2晶体中观察到了发光峰位于961 nm,半高宽202 nm的超宽带红外发光.在BiF3:BaF2晶体中检测到Bi2+和Bi3+可见区的发光,但是没有观察到红外发光.通过γ射线辐照实现了BiF3:BaF2晶体的近红外发光, 发光峰位于1135 nm,半高宽192 nm.讨论了Bi2O3和BiF3掺杂BaF2晶体的红外发光的机理. 关键词: 近红外发光 铋 氟化钡晶体 γ辐照  相似文献   

5.
Yin J  Hang Y  He X  Zhang L  Zhao C  Gong J 《Optics letters》2012,37(1):109-111
Growth, spectroscopic properties, and laser performance of Yb, Na:PbF(2) crystals have been investigated. With a 2 mol.% Yb(3+)-doped sample we obtained 2.65 W output power at 1045 nm for 7.5 W of incident power at 976 nm. The laser wavelength could be tuned from 1017 to 1078 nm, showing the great potential of Yb, Na:PbF(2) as an amplifier medium for femtosecond pulses.  相似文献   

6.
林玲  朱家杰  方弘 《物理学报》2013,62(14):147101-147101
焦硅酸镥掺铈(LPS:Ce)具有突出的闪烁性能, 比如高光产额和快衰减, 但晶格中的氧空位会影响其闪烁性能. 本文通过第一性原理方法研究了Li, Na, Mg和Ca在LPS中的稳定性和对氧空位的影响. 结果表明: 在缺氧环境下, 这些离子倾向于占据间隙位, 从而可能抑制氧空位. 分析了杂质离子对LPS电子结构的影响. 关键词: 第一性原理 焦硅酸镥 杂质缺陷  相似文献   

7.
The photoluminescence properties in UV and N-UV excitable range for the phosphors of Na2La2B2O7: RE (RE=Eu, Tb, Ce, Sm, Gd) are investigated. The solution combustion synthesis technique was employed for the synthesis of the phosphors Na2La2B2O7: RE. The photoluminescence measurements of the phosphors were carried out on a HITACHI F7000 Fluorescence Spectrophotometer. The PL and PL excitation (PLE) spectra indicate that the main emission wavelength of Na2La2B2O7: Eu are 591 and 615 nm, Na2La2B2O7: Ce shows dominating emission peak at 387 nm and Na2La2B2O7: Tb displays green emission at 493, 544, 593 and 620 nm at 254 nm excitation, while Na2La2B2O7: Sm shows the main emission peak wavelengths 566 and 604 nm at 405 nm excitation and Na2La2B2O7: Gd shows dominating emission peak at 312 nm at 274 nm excitation. These phosphors may provide a new kind of luminescent materials under ultraviolet and near ultraviolet excitation for various applications.  相似文献   

8.
采用高温固相反应法合成了掺杂Eu3 及Tb3 的17MO-7.88Y2O3-75B2O3样品,研究了它们的光谱特性,结果表明,MO-T2O3-B2O3基质在真空紫外(VUV)区有很强的吸收,MgO-Y2O3-B2O3:Eu在147nm真空紫外光激发下产生对应于Eu3 的5D0→7FJ(J=1,2,3,4)跃迁的590和613 nm强发射峰;MgO-Y2O3-B2O3:Eu中Sr的引入使材料体系在147 nm附近的吸收和在613 nm附近的发射获得明显增强;MgO-Y2O3-B2O3:Tb的真空紫外激发谱除在147 nm附近的基质吸收外,还有对应于Tb3 的4f75d→4f8跃迁位于170,178,195,204,225 nm左右的一组谱峰,两者相互叠加使得材料在真空紫外区(120~220 nm)内都有很好的吸收.  相似文献   

9.
Fabrication and characterization of In2O3 nanowires   总被引:1,自引:0,他引:1  
In2O3 nanowires were successfully fabricated through a simple gas-reaction route in argon atmosphere. These nanowires have diameters ranging from 20 nm to 50 nm and lengths up to tens of micrometers. High-resolution transmission electron microscopy observations and the electron-diffraction (ED) pattern reveal that the In2O3 nanowires are formed by the stacking of (2) planes along the [1] direction, which is parallel to the wire axis. A strong and wide ultraviolet (UV) emission band centered at around 392 nm is observed for the first time in the room-temperature photoluminescence measurement in addition to the usual blue emission (468 nm). Moreover, five discrete fine peaks (372 nm, 383 nm, 406 nm, 392 nm and 413 nm) are further identified in this broad UV band. Received: 10 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002  相似文献   

10.
张英兰  金昌根 《发光学报》1989,10(3):219-224
本文首次报导了采用碱式碳酸盐和氟化铵一步合成MeF2:Mn2+长余辉材料新方法。研究了各种条件和Mn2+浓度对荧光粉的影响,所得到的MgF2:Mn2+发射为橙红色,主峰在590nm,色度值为x=0.559,y=0.438,余辉大约200ms。荧光粉呈现均匀圆球状的颗粒,属于四方晶系。  相似文献   

11.
We report the mode-locked operation of two new Yb-doped oxyorthosilicates, Y2SiO5 (YSO) and Lu2SiO5 (LSO), that are longitudinally diode pumped. Yb:YSO supplied pulses as short as 122 fs with 410 mW of output power at 1041 nm. More than 2.6 W of average output power, for pulse durations of 198 fs at 1044 nm and 260 fs at 1059 nm for Yb:YSO and Yb:LSO, respectively, were provided. These are, to our best knowledge, the highest values ever obtained and the most efficient mode-locked laser in such a classic fiber-coupled diode-pumping configuration.  相似文献   

12.
用双坩埚法从高温溶液里生长出线度达7 mm的Nd3 : NaLa(WO4)2晶体.扫描电子显微镜的观察结果表明,虽然在晶体冷却过程中经历了两个相变,但相变并未造成晶体开裂;样品的X射线衍射花样可以看出,所得晶体为纯低温四方相的Nd3 :NaLa(WO4)2.在室温下对晶体的光吸收和光发射作了测量,发现晶体在804 nm有个半高宽达到23 nm的宽吸收峰.讨算出晶体在804 nm处的吸收截面为7.24×10-20 cm2,在1057 nm处的发射截面为6.54×10-20 cm2.  相似文献   

13.
Two Ce3+-doped scintillator crystals, LSO (Lu2SiO5:Ce) and LPS (Lu2Si2O7:Ce), are studied by EPR spectroscopy. The analysis indicates that Ce3+ substitutes for Lu3+ ion in a C2-symmetry site for LPS and in two C1-symmetry sites for LSO, with a preference for the largest one, with 6+1 oxygen neighbors. Angular dependence of the EPR spectrum shows that the electronic ground state of Ce3+ is different in these two matrices. It is mainly composed of |MJ|=5/2 state in LPS and |MJ|=3/2 state in LSO. The temperature dependence of the linewidth shows a noticeably long spin lattice relaxation time, especially in LPS, which is the result of a stronger crystal field in LPS than in LSO.  相似文献   

14.
用高温固相法合成了Eu2+,Mn2+共激活的Ca2SiO3Cl2高亮度白色发光材料,并对其发光性质进行了研究. 该荧光粉在近紫外光激发下发出强的白色荧光,Eu2+中心形成峰值为419 nm和498 nm的特征宽带,通过Eu2+中心向Mn2+中心的能量传递导致了峰值为578 nm的发射,三个谱带叠加从而在单一基质中得到了白光. 激发光谱均分布在250—415 nm的波长范围,红绿蓝三个发射带的激发谱峰值分别位于385 nm,412 nm,370 nm和396 nm处,可以被InGaN管芯产生的紫外辐射有效激发. Ca2SiO3Cl2:Eu2+,Mn2+是一种很有前途的单一基质白光LED荧光粉.  相似文献   

15.
采用高温固相反应法制备了xCe~(3+)(x=0.01%,0.05%,0.10%和0.30%)激活的Sr_(1-x)Al_2Si_2O_8近紫外荧光粉,利用X射线衍射(XRD)和扫描电镜(SEM)检测出荧光粉的物相结构,通过光致发光谱(PL)和激发光谱(PLE)表征了荧光粉的发光性质。结果显示,在中波紫外光激发下,发射峰位于长波紫外区,归属于Ce~(3+)的5d→2 F5/2和5d→2 F7/2跃迁。激发波长308nm时,观察到近紫外SrAl_2Si_2O_8荧光粉的发光强度随Ce~(3+)掺杂量增加而先增大后减小,同时发射峰位置红移。280和325nm波长选择性激发条件下的差异性发射行为表明SrAl_2Si_2O_8∶Ce~(3+)具有两种性质不同的发光中心,该结论由监测320和390nm发射时获得的形状具有明显区别的激发光谱亦可得以验证。离子半径的匹配性支持Ce~(3+)优先取代Sr~(2+),同时Van Uitert的经验公式估算结果推断出低浓度的Ce~(3+)生成九配位的Ce(Ⅰ)发光中心,高浓度掺杂情况下部分相互近邻的Ce~(3+)有效配位数减小,形成八配位的Ce(Ⅱ)发光中心。紫外280nm激发下峰位348nm的发射谱带源于Ce(Ⅰ)和Ce(Ⅱ)发光中心共同贡献,紫外325nm激发下发射峰位于378nm的发射带则主要对应于Ce(Ⅱ)发光中心。紫外光激发下Ce~(3+)发射出较强的近紫外光,表明SrAl_2Si_2O_8∶Ce~(3+)是一种适用于研发紫外荧光光源的荧光粉体材料。  相似文献   

16.
Luminescence measurements of X-irradiated SrF2:Ni are reported. After X-irradiation two emission bands have been found. One of them peaked at 293 nm and has an excitation band at 267 nm. The other one at about 770 nm, which is much weaker, has an excitation band at 274 nm. Both emission bands are also observed under X-ray excitation. A comparison with some previous studies of the absorption and thermoluminescence properties of X-irradiated SrF2:Ni indicates that the emission bands are due to two different kinds of Ni2+ centers. The proposed emission mechanisms are similar to those found in CaF2:Ni.  相似文献   

17.
在室温下,二价稀土离了 杂的LiBaF3:Eu^2 粉末样品中,Eu^2 的发射呈现双峰结构,有一峰值波长约为410nm的宽峰,对应于Eu^2 的5d-4f跃迁,以及另一峰值波长约为360nm的窄峰,对应于Eu^2 的4f-4f跃迁。在50-400nm波长范围,测量了样品的反射光谱,并利用Kramers-Kroenig关系,计算了吸收光谱。从吸收光谱中,可以看到在102nm处有明显的吸收边,得到LiBaF3材料的禁带宽度Eg约为12.1eV。在高能端有53.4,59.4,65.3,69.2和76.5nm的吸收峰,它们对应于Ba^2 的5p电子和F的2p电子芯能级之间的跃迁,在低能量的183.4nm处,有很明显的吸收峰,推测这对应于本征缺陷的吸收。更低能量的吸收峰,则对应于禁带中的一些杂质能级,在未经紫外光或X射线辐照之前,用长波长(>450nm)光激发LiBaF3:Eu^2 粉末样品,可以观测到Eu^2 离子的360nm和410m发光,亦表现出光激励发光特性。  相似文献   

18.
研究了在不同激发波长下三价钐离子掺杂硫氧化钇的发光强度对浓度的依赖关系。研究发现磷光体的发光强度不仅跟激活离子的浓度有关,而且跟激发时所采用的不同激发波长有关。磷光体发光强度与激活剂掺杂量的变化曲线表明,在不同激发路径下磷光体具有不同的发光性质。采用Sm^3 离子直接跃迁的413nm对样品进行激发时,发生猝灭的浓度低至约0.2mol%;当采用263nm高能紫外线激发时,浓度猝灭发生在较高浓度处(~2mol%),后者是前者的10倍。对Sm^3 离子发射强度与浓度关系曲线进行了拟合计算,结果表明Sm^3 在Y2O2S中浓度猝灭的原因主要是相邻中心的偶极-四极相互作用引起的交叉弛豫。  相似文献   

19.
微波法合成红色长余辉发光材料Gd2O2S:Eu,Mg,Ti及其发光特性   总被引:1,自引:0,他引:1  
用微波辐射法首次合成了Gd2O2S:Eu,Mg,Ti红色磷光化合物,用X射线粉末衍射(XRD)、扫描电镜(SEM)、荧光分光光度计等对合成产物进行了分析和表征.结果表明:材料的晶体结构为六方晶系,与Gd2O2S的相同.颗粒的形貌为类球形,分散性较好,尺寸在1~2 μm之间.Gd2O2S:Eu,Mg,Ti的激发光谱呈带状,激发光谱主峰位于360 nm,另外在400,422,472 nm等处也有激发峰存在;发射光谱为线状光谱,归属于Eu3 的5DJ(J=0,1,2)到7FJ(J=O,1,2,3,4)的跃迁.随着Eu浓度的增加,位于蓝绿区的586,557,541,513,498,471,468 nm处的发射峰逐渐减弱,而主峰位于627 nm处的红光发射明显增强.当Eu浓度为6 mol%时,红光发射最强.Mg,Ti共掺杂可显著改善其余辉性质.  相似文献   

20.
用高温合成法合成了CaO-SiO2-B2O3:Pr^3+玻璃,探讨了玻璃的最佳合成温度、玻璃的网络结构并研究了其发光性质。在CaO-SiO2-B2O3:Pr^3+玻璃体系中观察到了Pr^3+的发射光谱。480nm左右的发射峰对应于3P1—3H4跃迁,532nm左右的宽带发射峰对应于3P1—3H5跃迁,546nm左右的宽带发射峰对应于3P1—3H4跃迁,605nm左右的发射峰对应于3P0—3H6跃迁,663nm左右的发射峰对应于3P1—3H3跃迁。研究了掺杂Pr^3+浓度对其发光强度的影响,在该玻璃体系中观察到了浓度猝灭现象。光谱性质表明这种玻璃体系能够把太阳光中的紫外光转换成红光,从而增强红光的发射强度。我们可以利用这些玻璃的发光性质来制备农用转光玻璃。  相似文献   

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