Effect of confined LO-phonons interactions on polarons in quantum well wires

Summary  The energy of an electron interacting with the confined longitudinaloptical (LO) phonons in a rectangular quantum well wire is calculated as a function of the length of one size of the wires by a modified Lee-Low-Pines variational method. It is shown that in a very small wire the electron self-energy has a peak. But for larger wires, the self-energies increase monotonically. It is also found that the energies of the quasi-one-dimensional polaron are related to the sizes of the crosssection rather than to the cross-sectional area of the wire. The authors of this paper have agreed to not receive the proofs for correction.     

The self-consistent electronic structure of rectangular free-standing quantum wires: Fourier expansion approach

A method for the self-consistent calculation of rectangular free-standing quantum wires is presented. The method is also used for the electronic structure calculation of cladded quantum wires. It relies on the wavefunction's Fourier expansion, and uses the structure symmetry to save computation time. Calculations are performed for these two types of quantum wire at a number of dopant and surface state densities, and the influence of various parameters is analyzed. At low temperatures, the occurrence of Friedel oscillations is noticed, arising from a very limited number of well separated electronic states.     

量子线中强耦合极化子的温度效应

采用Tokuda改进的线性组合算符法和有效质量下的变分法,研究在抛物势作用下,同时考虑电子与LO声子相互作用时,温度对量子线中强耦合极化子特性的影响。对RbCl晶体所作的数值计算结果表明,量子线中强耦合极化子的基态能量、平均数和光学声子平均数均随温度的升高而增加。     

The mechanism of Landau-Rumer relaxation of thermal and high-frequency phonons in cubic crystals of germanium,silicon, and diamond

Transverse phonon relaxation according to the Landau-Rumer mechanism is considered for an isotropic medium and crystals of germanium, silicon, and diamond possessing a cubic symmetry. The energy of elastic deformation caused by the anharmonicity of vibrations of the cubic crystal lattice is expressed via the second-and third-order moduli of elasticity. Using the known values of these elastic moduli, parameters determining the frequencies of the transverse phonon relaxation in the Landau-Rumer mechanism are evaluated for the germanium, silicon, and diamond crystals. It is shown that the dependence of the relaxation frequency on the wavevector of thermal and high-frequency phonons sharply differs from the classical Landau-Rumer relationship both in the isotropic medium and in the cubic crystals. It is established that the observed peculiarities in the relaxation frequency are related to the angular dependence of the probability of anharmonic scattering and the anisotropy of elastic properties of the germanium, silicon, and diamond crystals. A new method is proposed for the experimental determination of the relaxation frequency of high-frequency phonons as a function of the wavevector using the temperature dependence of the coefficient of absorption of high-frequency ultrasound.     

Interface-Optical-Phonon Modes in Quasi-one-dimensional Wurtzite Rectangular Quantum Wires

By employing the dielectric continuum model and Loudon's uniaxial crystal model, the interface optical (IO) phonon modes in a freestanding quasi-one-dimensional (Q1D) wurtzite rectangular quantum wire are derived and analyzed. Numerical calculation on a freestanding wurtzite GaN quantum wire is performed. The results reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires, the free wave-number k_z in z-direction and the dielectric constant of the nonpolar matrix. The degenerating behavior of the IO modes in Q1D wurtzite rectangular quantum wire has been clearly observed in the case of small wave-number k_z and large ratio of length to width of the rectangular crossing profile. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. The present theories can be looked on as a generalization of that in isotropic rectangular quantum wires, and it can naturally reduce to the case of Q1D isotropic quantum wires once the anisotropy of the wurtzite material is ignored.     

Phonon effect on binding energies of impurity states in cylindrical quantum wires of polar semiconductors under an electric field

Phonon effect on hydrogenic impurity states in cylindrical quantum wires of polar semiconductors under an applied electric field is studied theoretically by a variational approach. The binding energies are calculated as functions of the transverse dimension of the quantum wire, and the donor-impurity position under different fields. The electron–phonon interaction is considered in the calculations by taking both the confined bulk longitudinal optical phonons and interface optical phonons as well as the impurity-ion–phonon coupling. The numerical results for the CdTe and GaAs quantum wires are given and discussed as examples. It is confirmed that the electron–phonon interaction obviously reduces both the binding energy and the Stark energy-shift of the bound polarons in quantum wires.     

Influence of Nonequilibrium LO Phonons on High-frequency Performance of One-dimensional Hot Electrons in Quantum Wires of Polar Semiconductors

Small-signal ac transport of degenerate one-dimensional hot electrons in quantum wires of GaAs and In_0.53Ga_0.47As is studied for lattice temperatures of 77 K and 300 K. The carrier energy loss via polar optic phonons and momentum losses via polar optic phonons, acoustic phonons and ionized impurities are included in the calculations. Alloy disorder scattering in momentum loss is additionally incorporated for (In,Ga)As. The consideration of nonequilibrium optical phonons or hot phonons is found to enhance the 3dB cut-off frequency (f_3dB) considerably, where the ac mobility falls to 0.707 of its low frequency value. f_3dB is generally higher for (In,Ga)As quantum wire than for GaAs.     

Optimization of microwire/glass-fibre reinforced polymer composites for wind turbine application

We here report a comprehensive study of glass-fibre reinforced polymers (GFRP) incorporating ferromagnetic microwires for microwave absorption applications. With wire addition, a remarkable dependence of microwave absorption performance appears on the local properties of wires such as wire geometry and the mesostructure such as inter-wire spacing, as well as the embedded depth of the wires layer. The impact testing further demonstrates that the metallic microwires can to some extent improve the impact performance. Based on both the absorption and impact behavior, we propose an optimized design of the microwire/GFRP composites to achieve simultaneous best possible absorption and impact performance for multifunctional applications in aeronautical structures and wind turbines.     

表面光学声子对柱形量子线中三次谐波振荡的影响

本文利用密度矩阵方法研究了表面光学声子对柱形量子线中三次谐波振荡的影响,并且导出了三次谐波振荡的表达式。然后,以GaAs柱形量子线为例作了数值计算。研究表明,当柱形量子线的横向半径d非常小时,电子和表面光学声子之间的耦合强度就非常大,表面光学声子对三次谐波振荡的影响就更强。     

The phonon effects on the impurity states in cylindrical quantum wire with a finite confining potential

The variational method and the effective mass approximation are applied to calculate the binding energies of the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential well. The phonon effects on the impurity states are considered by taking both the couplings of the electron-phonon and the impurity ion-phonon into account. The numerical results for the GaAs cylindrical quantum wire are given and discussed. It is found that the ion-phonon interaction reduces the impurity binding energy and supplies key contribution to the energy shift, but the electron-phonon coupling enhances the binding energy less. Longitudinal optical (LO) phonons play more important role than interface optical (IO) phonons in the impurity potential screening. The polaron effect caused by LO phonons is more important when the wire is thinner, otherwise the LO phonons are dominant for the thicker wires.     

Quantum decay of supercurrent in thin superconducting wires

Quantum fluctuations cause a decay of the supercurrent in thin superconducting wires making them resistive even at very low temperatures. We derive a microscopic effective action formalism that goes beyond the usual TDGL approach and study quantum fluctuations of the superconducting order parameter at all temperatures belowT _C . We calculate the quantum phase slip rate in thin superconducting wires, demonstrate the importance of dissipation in a quantum phase slip process, and evaluate the resistanceR(T) of the wire. In very thin wires the effect is well observable, even at zero temperature.     

Anharmonic processes of scattering and relaxation of slow quasi-transverse phonons in cubic crystals

Relaxation of slow quasi-transverse phonons in anharmonic processes of scattering in cubic crystals with positive (Ge, Si, diamond) and negative (KCl, NaCl) anisotropies of the second-order elastic moduli has been considered. The dependences of the relaxation rates on the direction of the wave vector of phonons in scattering processes with the participation of three quasi-transverse phonons (the TTT relaxation mechanisms) are analyzed within the anisotropic continuum model. It is shown that the TTT relaxation mechanisms in crystals are associated with their cubic anisotropy, which is responsible for the interaction between noncollinear phonons. The dominant contribution to the phonon relaxation comes from large-angle scattering. For crystals with significant anisotropy of the elastic energy (Ge, Si, KCl, NaCl), the total contribution of the TTT relaxation mechanisms to the total relaxation rate exceeds the contribution of the Landau-Rumer mechanism either by several factors or by one to two orders of magnitude depending on the direction. The dominant role of the TTT relaxation mechanisms as compared to the Landau-Rumer mechanism is governed, to a considerable extent, by the second-order elastic moduli. The total relaxation rates of slow quasi-transverse phonons are determined. It is demonstrated that, when the anharmonic processes of scattering play the dominant role, the inclusion of one of the relaxation mechanisms (the Landau-Rumer mechanism or the mechanisms of relaxation of the slow quasi-transverse mode by two slow or two fast modes) is insufficient for describing the anisotropy of the total relaxation rates in cubic crystals.     

LO-phonon effect on the exciton binding energy in polar rectangular quantum wires

Longitudinal optical phonon effect on Wannier excitons in polar rectangular quantum wires is studied by a variational approach. The binding energy is calculated and the numerical results for several II-VI and III-V compound semiconductor rectangular quantum wires are given. The results show that the phonon effect reduces the binding energy and cannot be neglected. The phonon contribution to the binding energy is sensitive to the size of the rectangular quantum wire section, and increases with decreasing section area. The results for the GaAs rectangular quantum wires coincide with the experimental results. The calculated binding energy and the phonon effect in II-VI QWWs are both stronger than those in III-V compound systems, and the results for ZnSe QWW are qualitatively in agreement with the experiments.     

Conductivity in intrinsic quantum well wires: Semimetal-semiconductor transition

The effect of size quantization on the conductivity of semimetallic and semiconducting rectangular quantum well wires (QWW) is studied. A semimental-semiconductor transition is predicted to occur at a critical thickness of the wire. For wires of smaller thickness than the critical thickness, semiconducting behavior will occur with the conductivity decreasing exponentially with decreasing transverse dimensions of the wire. That is due to carrier freeze-out because of the increase in effective bandgap resulting from the size quantization. The effect dominates any thickness dependence of the mobility resulting from scattering interactions.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.     

Universal conductance of nanowires near the superconductor-metal quantum transition

We consider wires near a zero temperature transition between superconducting and metallic states. The critical theory obeys hyperscaling, which leads to a universal frequency, temperature, and length dependence of the conductance; quantum and thermal phase slips are contained within this critical theory. Normal, superconducting, and mixed (SN) leads on the wire determine distinct universality classes. For the SN case, wires near the critical point have a universal dc conductance which is independent of the length of the wire at low temperatures.     

抛物量子线中束缚磁极化子的性质

研究抛物量子线中束缚磁极化子的性质,采用线性组合算符和幺正变换方法导出了强、弱耦合两种情况下的基态能量、振动频率和光学声子平均数.结果表明,无论是强耦合还是弱耦合情况,抛物量子线中束缚磁极化子的振动频率λ、基态能量E₀和光学声子平均数N都随约束强度ω₀的增大而迅速增大.     

Relaxation of quasi-transverse phonons in the Herring mechanism and ultrasound absorption in cubic crystals with positive and negative anisotropies of the second-order elastic moduli

The phonon relaxation and quasi-transverse ultrasound absorption in the course of Herring and Landau-Rumer anharmonic scattering processes in cubic crystals with positive (Ge, Si, diamond, InSb, LiF, MgO) and negative (KCl, NaCl, CaF₂) anisotropies of the second-order elastic moduli have been investigated. A new mechanism of transverse phonon relaxation, according to which the fusion of a transverse (slow or fast) phonon with a slow phonon generates a fast transverse phonon, has been considered in the long-wave-length approximation. This mechanism is similar to the Herring relaxation mechanism for longitudinal phonons. It has been demonstrated that, for crystals of the first group with a considerable anisotropy of the elastic energy (Ge, Si, InSb, LiF, MgO), “anomalous” relaxation processes in which the fusion of a slow transverse phonon with a fast phonon generates a slow transverse phonon are possible in contrast to the Herring relaxation mechanism for longitudinal phonons. These relaxation processes appear to be impossible for all crystals of the second group (KCl, NaCl, CaF₂), as well as for crystals of the first group with a small anisotropy of the elastic energy, such as diamond. The angular dependences of the ultrasound absorption coefficient for the Herring and Landau-Rumer mechanisms have been analyzed using the anisotropic-continuum model. It has been shown that, for the crystals of the first group under consideration, the contribution of the Herring mechanism to the long-wavelength ultrasound absorption is small compared to the contribution of the Landau-Rumer mechanism. However, for the KCl and NaCl crystals of the second group in directions of the [001] type, the contribution of the Herring mechanism can significantly exceed the contribution of the Landau-Rumer mechanism.     

声子之间的相互作用对量子线中磁极化子性质的影响

研究了量子线中弱耦合磁极化子的性质.采用线性组合算符和微扰法导出量子线中弱耦合磁极化子的基态能量.在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了量子线的受限强度、电子-LO声子耦合强度和声子之间相互作用对量子线中弱耦合磁极化子的基态能量的影响.数值计算结果表明:量子线中弱耦合磁极化子的基态能量随量子线的受限强度ω₀的增大而迅速增大.当受限强度ω₀取相同值时,电子-声子耦合强度α越大基态能量E₀越小,磁场的回旋频率ω_e越大基态能量E₀越大.在弱磁场情况下,当ω₀<0.5时,随着量子线的受限强度ω₀的减少p值迅速增大,即对于弱磁场声子之间相互作用的影响不能忽略.     

Microscopic theory of Auger recombination in quantum wires

An analysis is made of mechanisms for Auger recombination of nonequilibrium carriers in cylindrical quantum wires. It is shown that two different Auger recombination mechanisms take place in these wires: a quasi-threshold and a nonthreshold mechanism. Both mechanisms are associated with the presence of heterobarriers but are of a different nature. The quasi-threshold mechanism is attributed to the spatial confinement of the carrier wave functions to the region of the quantum wire and in this case the quasi-momentum conservation law is violated and the Auger recombination process is intensified. As the radius of the wire increases, the quasi-threshold Auger recombination process goes over to a threshold process. The nonthreshold mechanism is caused by the scattering of an electron (hole) at the heterojunction; the rate of this nonthreshold Auger recombination tends to zero in the limit of an infinite-radius wire.