LO-phonon effect on the exciton binding energy in polar rectangular quantum wires

Longitudinal optical phonon effect on Wannier excitons in polar rectangular quantum wires is studied by a variational approach. The binding energy is calculated and the numerical results for several II-VI and III-V compound semiconductor rectangular quantum wires are given. The results show that the phonon effect reduces the binding energy and cannot be neglected. The phonon contribution to the binding energy is sensitive to the size of the rectangular quantum wire section, and increases with decreasing section area. The results for the GaAs rectangular quantum wires coincide with the experimental results. The calculated binding energy and the phonon effect in II-VI QWWs are both stronger than those in III-V compound systems, and the results for ZnSe QWW are qualitatively in agreement with the experiments.