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1.
Phonon effect on hydrogenic impurity states in cylindrical quantum wires of polar semiconductors under an applied electric field is studied theoretically by a variational approach. The binding energies are calculated as functions of the transverse dimension of the quantum wire, and the donor-impurity position under different fields. The electron–phonon interaction is considered in the calculations by taking both the confined bulk longitudinal optical phonons and interface optical phonons as well as the impurity-ion–phonon coupling. The numerical results for the CdTe and GaAs quantum wires are given and discussed as examples. It is confirmed that the electron–phonon interaction obviously reduces both the binding energy and the Stark energy-shift of the bound polarons in quantum wires.  相似文献   

2.
抛物量子线中强耦合极化子的有效质量   总被引:10,自引:7,他引:3       下载免费PDF全文
采用改进的线性组合算符法、Lagrange乘子和变分法,在考虑电子与LO声子相互作用情况下,研究了抛物量子线中强耦合极化子的有效质量和光学声子平均数。通过数值计算,讨论了约束强度ω0和拉格朗日乘子u对极化子的有效质量m*和光学声子平均数N及极化子振动频率λ的影响。计算结果表明:有效质量m*和光学声子平均数N及极化子振动频率λ都随着约束强度ω0和拉格朗日乘子u的增加而增大。  相似文献   

3.
抛物量子线中弱耦合极化子的有效质量和光学声子平均数   总被引:9,自引:5,他引:4  
讨论电子与体纵光学(LO)声子弱耦合时对抛物量子线中极化子性质的影响.采用Tokuda改进的线性组合算符法、Lagrange乘子和变分法,导出了抛物量子线中弱耦合极化子的有效质量和光学声子平均数随拉格朗日乘子变化的规律及极化子振动频率随量子线约束强度的变化规律.并以ZnS量子线为例进行了数值计算,结果表明:抛物量子线中弱耦合极化子的有效质量m*和光学声子平均数N随着拉格朗日乘子u的增加而增大;该结论与体材料中结论基本一致,但量子线中的效应比体材料更明显,表明量子线对电子约束的增强,使极化子效应更明显.同时,极化子振动频率λ随约束强度ω0的增强而增大.  相似文献   

4.
Within the framework of the Li-Low-Pines model the interaction of a Wannier-Mott exciton with polar optical phonons in a cylindrical semiconductor wire is studied, taking into account the phonon confinement effect. An analytical expression for the exciton binding energy with allowance for the polaronic effect is obtained. Numerical calculations of the binding energy are carried out for AlAs/GaAs/AlAs and ZnSe/CdSe/ZnSe wires with a various degree of polarity of quantum wire materials. The polaronic shift of the binding energy of light and heavy hole excitons is calculated.  相似文献   

5.
李红  孔小均 《中国物理》2004,13(5):759-764
A simple method for calculating the free-exciton binding energies in the fractional-dimensional-space model for single-quantum-well structure has been extended to quantum-well wires and quantum dots, in which the real anisotropic system is modelled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz. We calculated the ground-state binding energies of excitons and donors in quantum-well wires with rectangular cross sections. Our results are found to be in good agreement with previous variational calculations and available experimental measurements. We also discussed the ground-state exciton binding energy changing with different shapes of quantum-well wires,  相似文献   

6.
The variational method and the effective mass approximation are applied to calculate the binding energies of the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential well. The phonon effects on the impurity states are considered by taking both the couplings of the electron-phonon and the impurity ion-phonon into account. The numerical results for the GaAs cylindrical quantum wire are given and discussed. It is found that the ion-phonon interaction reduces the impurity binding energy and supplies key contribution to the energy shift, but the electron-phonon coupling enhances the binding energy less. Longitudinal optical (LO) phonons play more important role than interface optical (IO) phonons in the impurity potential screening. The polaron effect caused by LO phonons is more important when the wire is thinner, otherwise the LO phonons are dominant for the thicker wires.  相似文献   

7.
We have studied theoretically the impurity binding energy for wires of different shapes (V-shaped quantum wire (V-QWR) and rectangular wire) with a variational procedure without using any coordinate transformation. The effective potential for V-QWR used in this work consists of a square well potential in the z-direction and full graded well potential in the x-direction. Our results are in good agreement with previous theoretical results, found by the coordinate transformation method. Furthermore, it is shown that the impurity binding energy in quantum wires is sensitive to the geometrical effects.  相似文献   

8.
The hydrogenic impurity binding energy in rectangular quantum well wire including both barriers of finite height and an applied electric field are studied. The polaron effects on the ground-state binding energy in electric field are investigated by means of Landau-Pekar variation technique. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied electric field and the position of the impurity. Our calculations are compared with previous results in quantum wires of comparable dimensions.  相似文献   

9.
吴云峰  梁希侠  BajaK.K. 《中国物理》2005,14(11):2314-2319
The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.  相似文献   

10.
Quantum well devices feature heterostructures of very thin epitaxial layers of group III-V and II-VI semiconductor materials. Quantum well devices are integrated monolithically with various optoelectronics devices to provide photonic integrated circuits. The representative structure could be realized with GaAs wells with GaAlAs barriers for wavelengths around 0.9 μm and InGaAsP are used for longer wavelengths. Together with quantum well, superlattice structure is another popular design for InGaAs Avalanche Photo Diode (APD). Quantum well structures find their applications in improved lasers, superlattice for photodiodes, modulators and switches. Consequences of quantum well theory are available today in terms of quantum wires and quantum dots. Upon the application of the normal electric field to quantum well structures, exciton pairs becomes more and more confined and the sharp exciton absorption peaks are observed. The effect is termed as “Quantum Confined Stark Effect”. The electro-absorption effect is approximately 50 times larger in multiple quantum well structures than it is in bulk semiconductors. Another electro-absorption effect known as “Franz Keldysh Effect” has been employed in monolithic waveguide detector. These effects lead to electro-absorption lasers (EAL) as well as electro-absorption laser modulators (EML).  相似文献   

11.
Within the framework of Feynman path-integral variational theory, we calculate the ground-state energy of a polaron in parabolic quantum wires in the presence of a Coulomb potential. It is shown that the polaronic correction to the ground-state energy is more sensitive to the electron-phonon coupling constant than the Coulomb binding parameter, and it increases monotonically with decreasing effective wire radius. Moreover, compared to the results obtained by Feynman Haken variational path-integral theory, we obtain better results within the Feynman path-integral variational approach (FV approach). Applying our calculation to several polar semiconductor quantum wires, we find that the polaronic correction can be considerably large.  相似文献   

12.
In this work, using the effective mass approximation within variational approach, we have studied the behavior of the excitonic binding energies in a cylindrical quantum wire with a parabolic confinement under the effect of externally applied magnetic field. We have shown that the excitonic binding energy is sensitive to the magnetic field value in contrast to the other potential profiles studied in literature such as rectangular quantum wells (wires).  相似文献   

13.
The Feynman-Haken variational path integral theory is, for the first time, generalized to calculate the ground-state energy of an electron coupled simultaneously to a Coulomb potential and to a longitudinal-optical (LO) phonon field in parabolic quantum wires. It is shown that the polaronic correction to the ground-state energy is more sensitive to the electron-phonon coupling constant than the Coulomb binding parameter and monotonically stronger as the effective wire radius decreases. We apply our calculations to several semiconductor quantum wires and find that the polaronic correction can be considerably large. Received 16 November 1998  相似文献   

14.
Using a variational technique, the effect of electron-longitudinal optical (LO) phonon interaction on the ground and the first few excited states of a hydrogenic impurity in a semiconductor quantum wire of rectangular cross section under an external electric field is studied theoretically for the impurity atom doped at various positions. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied uniform electric field and the position of the impurity. It is found that the presence of optical phonons changes significantly the values of the impurity binding energies of the system. Taking into account the electron–LO phonon interaction the 1s→2py and 1s→2pz transition energies are calculated as a function of applied electric field for different impurity positions.  相似文献   

15.
红兰  肖景林 《发光学报》2007,28(5):673-678
研究了量子线中弱耦合磁极化子的性质.采用线性组合算符和微扰法导出量子线中弱耦合磁极化子的基态能量.在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了量子线的受限强度、电子-LO声子耦合强度和声子之间相互作用对量子线中弱耦合磁极化子的基态能量的影响.数值计算结果表明:量子线中弱耦合磁极化子的基态能量随量子线的受限强度ω0的增大而迅速增大.当受限强度ω0取相同值时,电子-声子耦合强度α越大基态能量E0越小,磁场的回旋频率ωe越大基态能量E0越大.在弱磁场情况下,当ω0<0.5时,随着量子线的受限强度ω0的减少p值迅速增大,即对于弱磁场声子之间相互作用的影响不能忽略.  相似文献   

16.
量子线中强耦合极化子的温度效应   总被引:1,自引:0,他引:1  
采用Tokuda改进的线性组合算符法和有效质量下的变分法,研究在抛物势作用下,同时考虑电子与LO声子相互作用时,温度对量子线中强耦合极化子特性的影响。对RbCl晶体所作的数值计算结果表明,量子线中强耦合极化子的基态能量、平均数和光学声子平均数均随温度的升高而增加。  相似文献   

17.
Under the dielectric continuum model and separation of variables, the interface optical (IO) phonon modes and electron-optical-phonon interaction in rectangular quantum wire and quantum dot embedded in a nonpolar matrix are studied. We found that there exist various types of IO phonon modes in rectangular nanostructures. The IO phonon modes in rectangular quantum wire include IO-propagating (IO-PR) and IO-IO hybrid phonon modes, while the IO phonon modes in rectangular quantum dot contain IO-IO-PR and IO-PR-PR hybrid phonon modes. The results of numerical calculation show that these hybrid phonon modes contain corner optical (CO) phonon modes and edge optical (EO) phonon modes. The potential applications of these results are also discussed.  相似文献   

18.
In this paper, the dispersion relations of surface phonon–polaritons in freestanding rectangular quantum wire systems of polar ternary mixed crystals are derived. The numerical calculations for AlxGa1−xAs and ZnxCd1−xSe quantum wire systems are performed. The results reveal that the frequencies of surface phonon–polariton modes are sensitive to the geometric structures of the quantum wires, the wave-vectors in z-direction, and the compositions of the ternary mixed crystal materials. The effects of the “two-mode” and “one-mode” behaviors of the ternary mixed crystals on the surface phonon–polariton modes are also discussed.  相似文献   

19.
L. Shi  Z.W. Yan   《Physics letters. A》2009,373(38):3490-3494
A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/AlxGa1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.  相似文献   

20.
肖景林 《发光学报》2003,24(1):28-32
采用线性组合算符和幺正变换方法,研究极性晶体中强耦合表面激子内部激发态的性质.计算了表面激子的激发态能量、激发能量和平均声子数.  相似文献   

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