Generation of terahertz radiation in high-quality diamond samples

A method is proposed for generating terahertz radiation by producing a spectrally limited population inversion between light- and heavy-hole subbands in the valence band of semiconductors. This inversion is achieved by placing a sample in a static magnetic field and pumping it with an alternating electric field resonant with a cyclotron frequency of heavy holes. At a sufficiently low concentration of holes when the energy exchange between them is less effective than the exchange with the lattice, a considerable heating of heavy holes occurs with a nearly constant distribution function of light holes. However, the low hole concentration leads to a small terahertz field gain that can exceed the field loss only in high-quality diamond samples that are almost transparent in the terahertz range. An important advantage of this method for generating terahertz radiation over the previously proposed techniques is the possibility of implementing it at room temperature, which substantially increases its attractiveness, especially for use in biology and medicine.     

Spontaneous and stimulated emission of radiation from hot holes from uniaxially stressed germanium

Far-infrared radiation from hot holes in Ge under streaming conditions is investigated. Stimulated emission is observed from uniaxially compressed samples without magnetic field. The existence of inversion is due to a strain splitting of the light and heavy hole bands.     

Many body theory of THz intervalence gain in quantum wells

This paper presents calculations of THz gain in III–V quantum wells based on transitions between the valence bands. The system is out of equilibrium and the optical susceptibility leading to absorption and gain is calculated after a Keldysh nonequilibrium Greens’ functions approach. The relevance of many body and nonresonant contribution to the spectrum is discussed as a function of local population inversion in k-space for a system where the injected holes are distributed within the two lowest subbands without global population inversion.     

Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfaces

Inter-subband spectroscopy in inversion and accumulation layers of holes on (110) and (111) Si surfaces have been performed. Sample characterization is made using capacitance vs voltage measurements at room and liquid helium temperatures. It is shown that the measured energy spacings are larger than the predictions of a calculation based on Hartree approximation. This is contrary to the conclusion reached from Shubnikov-de Haas measurements on (110) inversion layer of holes.     

Spatial correlation of an electron and hole in quasi-two-dimensional electronic system in a strong magnetic field and its relationship to the light-scattering tensor

The spatial correlation of light-generated electrons and holes in a quasi-two-dimensional electron gas in a strong magnetic field is investigated in an approximation linear in the intensity of the exciting light. The correlation is due to the interaction of the electrons and holes with longitudinal optical (LO) phonons. The theory permits calculating, on the basis of a special diagrammatic technique, two distribution functions of an electron-hole pair with respect to the distance between the electron and the hole after the emission of N phonons: first, the function determining the total number of pairs which have emitted N phonons and, second, the function related to the rank-4 light-scattering tensor in interband resonance Raman scattering of light. A special feature of the system is that the electron and hole energy levels are discrete. The calculation is performed for a square quantum well with infinitely high barriers. The distribution function and the total number of electron-hole pairs before the emission of phonons as well as the distribution function corresponding to two-phonon resonance Raman scattering are calculated. The theory predicts the appearance of several close-lying peaks in the excitation spectrum under resonance conditions. The number of peaks is related to the number of the Landau level participating in the optical transition. The distance between peaks is determined by the electron-phonon coupling constant. Far from resonance there is one peak, which is much weaker than the peaks obtained under resonance conditions. Zh. éksp. Teor. Fiz. 111, 2194–2214 (June 1997)     

Linear circular dichroism in nonlinear absorption of light in a quantum well

The far infrared absorption spectrum caused by optical transitions of holes between size-quantization subbands is calculated for p-GaAs/AlGaAs(001) quantum-well structures. The selection rules for optical transitions at the center of the two-dimensional Brillouin zone are determined. Allowance is made for resonant saturation of one-photon electronic transitions between size-quantized subbands of light and heavy holes. The linear circular dichroism in one-photon nonlinear (resonant) and two-photon absorption of light in a size-quantized well are investigated. Fiz. Tverd. Tela (St. Petersburg) 40, 1347–1349 (July 1998)     

Association of rhodamine 6G in light and heavy water solutions

The absorption characteristics of rhodamine 6G molecules in light and heavy water solutions are studied. The association efficiencies of dye molecules and the structure and the binding energy of complexes formed are determined in relation to the solvent composition. The structure of H₂O +D₂O solutions is studied using correlation and low-frequency Raman spectroscopy. The distribution of dissolved complex molecules in the water matrix is shown to have inhomogeneities, which are responsible for a high association efficiency. The characteristic size of these inhomogeneities is estimated. The fractal dimension of the structural formations of light and heavy water molecules is determined as a function of their concentration.     

Scattering mechanisms of heavy and light holes in p-type gallium antimonide

It is not known if the scattering probabilities of two kinds of holes in p-type gallium antimonide are the same. In the present paper we found by mobility measurements in the temperature range 77–300 K that the scattering probabilities of heavy and light holes are not the same and they depend not only on the number of the final allowed states in the band of the the heavy holes into which are scattered, but also on a reduced effective mass.     

A study on the effect of filling factor for laser action in dielectric random media

In a random system composed of dielectric materials, laser action is expected to occur from the light localization caused by multiple scattering and interference effect. The wavelengths at which the laser oscillation occurs in random media depend on the mean free path of continuous scattering. Since the mean free path of continuous scattering is dependent on the filling factor, it is important to investigate systematically the effect of the filling factor for the laser action. In the present study, we calculate the Poynting vectors of the light emitted from two-dimensional random media consisting of dielectric rods with population inversion modeled by the negative imaginary part of relative permittivity. The spectra of the radiated Poynting vectors from the two-dimensional random media are shown for several different filling factors and for various values of population inversion. We try to find laser generation which occurs at low population inversion and discuss about the threshold of laser action occurring in dielectric structures with different filling factors. We also study the spacial distribution of the electric field amplitude in several frequency regions where light strongly amplifies.     

Enhanced light emission in Si-nanoclusters arrays

An array of silicon nanoclusters aimed at producing light emission upon injection of electrons and holes from external sources is studied by Monte Carlo simulations. The conditions for obtaining a significant charge accumulation in the emitting nanoclusters are investigated as a function of array geometry and applied electric fields. It is found that if a stationary state, reached for an applied field F₀, is suddenly perturbed by a field F₁≫F₀, a significant increase in electron-hole pairs population can be obtained with respect to the case of a single field of constant intensity F₁, leading to enhanced light emission when the conductivity of the array is above 6×10^-10 [ Ω cm] ^-1. The excess population thus created gets fully recombined on the time scale of milliseconds, suggesting a device that can produce enhanced light emission in the range of kilohertz.     

Optical orientation and femtosecond relaxation of spin-polarized holes in GaAs

Optical orientation of spin-polarized heavy and light holes followed by relaxation to other valence subband states has been observed unambiguously in undoped bulk GaAs in spite of the extremely short spin relaxation time. The measured relaxation time for the heavy holes is 110 fs +/-10%. The results are relevant for applications such as interpretation of spin-polarized transport in semiconductors as well as the assessment of feasibility of hole-based spin-transport devices which relies on precise knowledge of the hole-spin relaxation time.     

Submillimetre cyclotron resonance measurement of the effective masses of the holes in p-type GaP

The effective mass ratios of the heavy and light holes at the band edge of p-type gallium phosphide have been determined by submillimetre cyclotron resonance at 77 K. The values obtained are 0.54 ± 0.05 and 0.16 ± 0.02 respectively. A comparison is made with k.p calculations of these quantities.     

Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlattices

Laser excited hot electrons in GaAs relax by LO phonon emission within a few hundred femtoseconds, leading to a series of peaks in the distribution of hot electrons in the conduction band, which we observe in luminescence. We find that the luminescence peaks shift according to the acceptor binding energy for C?, Ge?, Zn?, and Be-p-doped GaAs layers grown by MBE and LPE. Thus we prove that recombination is between hot electrons and neutral acceptors. The series of peaks due to electrons from the heavy hole band agree well with $\text{k}\text{.}\text{p}$ band structure, while peaks due to those from light holes are about 15 meV lower than expected from the band structure. We show that the discrepancy is not due to heating or surface fields. The peak separation in the luminescence ladder is about 6% larger than the LO energy suggesting emission of renormalised LO phonons. We find thermalisation by LO emission also in GaAs nipi doping superlattices. In nipi crystals the emission is shifted to higher energies (by 12 meV for light and by 6 meV for heavy holes) due to a change in band structure caused by the space charge fields.     

Multicomponent Structure of an Electron-Hole Liquid in Shallow SiGe/Si Quantum Wells

The fine structure of the emission spectrum lines is studied for a quasi-two-dimensional electronhole liquid (EHL) embedded in SiGe/Si quantum wells. It is shown that the patterns observed in the spectra of the two-particle (IR band) and four-particle (visible band) recombination can be explained by the presence of both heavy and light holes in the condensed phase. Comparison of the experimental data and calculated photoluminescence spectra of EHL allow determination of its main parameters, e.g., the equilibrium density, work function for pairs of particles, and light hole–heavy hole splitting at the G-point of the Brillouin zone for quantum wells that are 3.7–5.1% Ge.     

Optical spin injection and spin lifetime in Ge heterostructures

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin polarizations and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct gap photoluminescence exceeds the theoretical bulk limit, yielding ～37% and ～85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is estimated to be ～0.5 ps and it is governed by transitions between light and heavy hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5?ns below 150?K. Theoretical analysis of the spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime of electrons.     

多角度动态光散射加权贝叶斯反演算法

研究加权贝叶斯算法在多角度动态光散射法测量单峰分布颗粒体系的颗粒粒度分布中的应用.采用颗粒粒度信息分布为底数、调节参数为指数的权重系数给各个角度下的光强自相关函数曲线加入不同的权重系数，再利用传统的贝叶斯算法反演.模拟与实验结果表明，加权后的贝叶斯算法能获得分布误差更小的反演结果，有效地抑制了数据噪声的影响，提高颗粒粒度分布反演的准确性.     

Energy spectrum and optical absorption in p-CdGeAs2

In the Kein four-band model, taking account of interaction with excited bands, the energy spectrum and effective masses of electrons and holes in CdGeAs₂ are calculated. The polarizational dependence of the optical absorption spectrum is investigated for transitions between bands of light and heavy holes. The results are compared with experimental data.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 68–72, January, 1982.     

Josephson current through a ferromagnetic semiconductor/semiconductor/ferromagnetic semiconductor structure

We theoretically calculate the Josephson current for two superconductor/ferromagnetic semiconductor (SC/FS) bilayers separated by a semiconductor (SM) layer. It is found that the critical Josephson current I_C in the junction is strongly determined by not only the relative orientations of the effective exchange field of the two bilayers and scattering potential strengths at the interfaces but also the kinds of holes (the heavy or light) in the two FS layers. Furthermore, a robust approach to measuring the spin polarization P for the heavy and light holes is presented.     

Optical Particle Sizer: A New Development with Mathematical Correction of Spread Measurement Data

The development of an optical particle sizer for aerosols is described which is based on the principle of light scattering by single particles. The instrument is appropriate for simultaneous measurements of broad particle size distributions and allows applications in hot gases. The main topic concerns the evaluation of the particle size distribution from measured data, i.e. a mathematical correction for the influence of inhomogeneous illumination and of particle shape. Irregularly shaped and randomly orientated particles which also might be illuminated inhomogeneously (laser light, border zone) deliver different signal amplitudes, which finally results in a spreading of the measured particle size distribution. Assuming a specific distribution of signal amplitudes related to every particle size and shape, the spreading of the measured data can be corrected. The mathematical procedure requires the solution of a Fredholm integral equation, i.e. the inversion of a linear equation set whose coefficients are based on a correction function to be determined by a preceding calibration. A new inversion method has been developed combining the well known regularizalion according to Phillips and Twomey and the non-negative least-squares method according to Lawson and Hanson.