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1.
利用溶融和热扩散方法,我们合成了金属化合物CeCuGa.X射线衍射表明样品为单相的正交结构,分别利用稳定绝热脉冲法和四引线法测量了样品的低温比热及电阻率,电阻率在低温区出现Kondo极小,10K以上的比热数据与电子项γT和声子项βT~3符合的很好,在2K左右出现Kondo宽峰,2K以下的数据外推到绝对零度得到γ=1.46J/K~2mole,表明CeCuGa是一种典型的重费米子材料。  相似文献   

2.
CeCu6是一种重费密子系统,采用Ni替代Cu研究磁性原子掺杂的多晶样品CeCu6-xNix(x=0.00,0.05,0.10,0.15,0.20)在极低温下的电阻随温度的变化规律.实验结果表明,随着Ni原子掺杂量的增加,电阻的规律发生变化.在500mK以下,x≈0.1的样品电阻与温度呈线性关系,表现出非费密液体行为,而其他样品皆为典型的费密液体,x≈0.1是其临界掺杂成分.对比用Au替代的情况,临界掺杂成分也是0.1,但Au掺杂是靠体积膨胀来改变合金的基态性质,而Ni掺杂则是因其磁性造成对合金基态性质的影响 关键词: 重费密子 临界掺杂 非费密液体  相似文献   

3.
对La2-xSrxCuO4系列(x=0.06~0.20)样品的电阻率和霍尔系数等输运特性进行了系统研究.电阻率随温度变化的实验结果表明,对低掺杂样品,在正常态区域(T>Tc),随Sr掺杂量的增加,各样品在低温区超导转变温度附近均发生了金属-绝缘体转变,且转变温度TMl随掺杂量的增加逐渐降低;对于最佳掺杂样品,其金属-绝缘体转变行为变得非常不明显,到x=0.18时完全消失.对正常态样品的霍尔系数而言,随温度的降低逐渐增大,且随Sr掺杂量的增加显示减小.表明载流子浓度随掺杂量的增加而增加.在低掺杂时,接近Tc的温区内霍尔系数RH迅速增大,随着掺杂量的增加Tc附近霍尔系数的增大变缓.霍尔系数在Tc附近的增大,表明低温区载流子浓度减少.电阻率和霍尔系数在低温区电输运的这种反常行为可从载流子的局域化角度给予初步解释.  相似文献   

4.
采用传统的固相反应法制备出了高质量的La_(0.7)Ca_(0.3)MnO_3(其中x=0.00,0.05,0.10,0.15,0.20)系列样品,并对其进行了XRD,电阻-温度测量.实验结果表明,随着Eu掺杂量的增加,样品的金属-绝缘体转变温度朝低温附近移动,峰值电阻增加.通过对A位平均离子半径和尺寸无序度的计算,我们发现,由Eu掺杂导致A位平均离子半径〈rA〉减小,尺寸无序度σ2增大,使晶格畸变加剧,从而削弱了eg巡游电子在Mn3 和Mn4 之间的跃迁,同时促进了自旋极化子的形成.我们还对样品电阻-温度曲线的高温部分进行了拟合,对于x=0.00的样品,曲线可以用非绝热近似下的小极化子模型拟合;当掺杂量为x=0.05,0.10,样品的导电机理符合变程跳跃模型;进一步加大掺杂量,当x=0.15,0.20时,样品的电输运行为可以用晶格极化子与自旋极化子共存来解释.  相似文献   

5.
金克新  赵省贵  陈长乐 《物理学报》2009,58(7):4953-4957
分别采用溶胶-凝胶和射频磁控溅射的方法制备了La0.67Sr0.33CuxMn1-xO3x=0.05, 0.10和0.15)系列块材和薄膜,研究了Cu部分替代对薄膜光诱导特性的影响.实验结果表明随着Cu掺杂量的增加,薄膜的金属-绝缘转变温度向低温方向移动,且导电性降低.在金属相激光作用诱导电阻增大.光致电阻相对变化极大值随着Cu含量的增加而增大,当 关键词: 锰氧化物 光诱导 Cu掺杂 晶格效应  相似文献   

6.
本文主要介绍用溶胶-凝胶法制备的Ba离子掺杂的双层钙钛矿锰基氧化物La4/3(Sr1-xBax)5/3Mn2O7(00.4范围内,低温电阻值随烧结温度增加而减小.出现这种反常行为的结果可能是由于随着Sr逐步被Ba离子取代而引起的失配效应造成结构相分离所致.  相似文献   

7.
我们采用传统固相反应法成功制备了系列多晶样品Bi_(1.6)Pb_(0.4)Sr_(2-x)(Ce_(1-y)Eu_y)_xCuO_z(x=0.1,0.2;0≤y≤1),并且用XRD和电阻率分别对其晶体结构和输运性质进行了研究.XRD结果表明,当Ce/Eu共掺杂量x=0.1时,样品成单相,当x=0.2时,会有杂相出现;随着Eu掺杂量的增加及相应Ce掺杂量的减少,样品的晶胞参数a,b稍有增大,晶胞参数c则显著增大;电阻率测量表明,随着Eu掺杂量的增加,样品的超导转变温度Tocnset可以提高到21K,Ce掺杂对超导电性有一定的抑制作用,而Eu掺杂却能够改善超导电性,其中Tconset随Ce/Eu掺杂量的变化可以用电荷转移模型进行合理解释.  相似文献   

8.
主要研究了(Pr1-yNdy)2/3Sr1/3MnO3体系多晶样品在低温下的比热反常现象.Pr2/3Sr1/3MnO3在低温下没有比热反常现象,但随着Nd替代Pr,比热反常开始出现,峰值逐渐增加,峰值出现温度逐渐减小;在磁场的作用下,峰值减小,峰值出现温度逐渐增加;经分析,该低温比热反常现象与Schottky效应相关.  相似文献   

9.
采用基于柠檬酸体系的溶胶-凝胶法制备了Pr0.7(Sr1-xCax)0.3MnO3系列的多晶块材, 同时还用脉冲激光沉积技术(PLD)在SrTiO3(100)衬底上外延生长了同一系列的薄膜, 系统研究了它们的晶格结构和电输运行为. 多晶和薄膜样品都具有正交晶格结构, 电输运行为在居里温度TC以上的高温顺磁相都很好地符合了绝热小极化子模型. 用绝热小极化子模型对两者的电阻率温度曲线进行拟合, 多晶和薄膜样品的拟合结果在定性上是一致的. 随着Ca掺杂量的增加, 极化子跳迁能Ehop变大,ρ0先减小后增大. 实验结果说明, 只要多晶样品制备的质量好, 缺陷、晶界的影响可以大大降低, 多晶样品的电输运行为也能表现出本征的小极化子性质.  相似文献   

10.
本文研究了掺杂杂质对Sn_(1-x)Mn_xO_2多晶样品的影响.实验发现,当Sn_(1-x)Mn_xO_2中掺入+2价的Cu离子时体系的铁磁性增强,此时样品仍为绝缘体.而当Sn_(1-x)Mn_xO_2中掺入Sb元素时其铁磁性减弱,并且当Sb的掺杂量达到0.04时样品Sn_(0.97-z)Mn_(0.03)Sb_zO_2的电阻率显著下降.实验结果表明,自由移动的载流子会破坏样品的铁磁性,束缚极化子可能是Mn掺杂SnO_2样品产生铁磁耦合的主要原因.  相似文献   

11.
Polycrystalline samples of the solid solution Ce2Cu(2-x)Ni(x)In were studied by means of x-ray powder diffraction, magnetic susceptibility and electrical resistivity measurements performed in a wide temperature range. Partial substitution of copper atoms by nickel atoms results in a quasi-linear decrease of the lattice parameters and the unit cell volume of the system. The lattice compression leads to an increase in the exchange integral and yields a reversal in the order of the magnetic 4f(1) and nonmagnetic 4f(0) states, being in line with the Doniach phase diagram. In the localized regime, where an interplay of the Kondo scattering and the crystalline electric field effect occurs, the rise in the hybridization strength is accompanied by a relative reduction in the scattering conduction electrons on excited crystal field levels.  相似文献   

12.
Thermodynamic and transport properties of the La-diluted Kondo lattice CeNi(2)Ge(2) were studied in a wide temperature range. The Ce-rich alloys Ce(1-x)La(x)Ni(2)Ge(2) were found to exhibit distinct features of the coherent heavy Fermi liquid. At intermediate compositions (0.7≤x≤0.9), non-Fermi liquid properties have been observed, followed by the local Fermi liquid behavior in the dilute limit. The 4f-electron contribution to the specific heat was found to follow the predictions of the Kondo-impurity model in both the local as well as the coherent regimes, with the characteristic Kondo temperature decreasing rapidly from about 30 K for the parent compound CeNi(2)Ge(2) to about 1 K in the most dilute samples. The specific heat does not show any evidence for the emergence of a new characteristic energy scale related to the formation of the coherent Kondo lattice.  相似文献   

13.
The pseudo-ternary solid solution CeNi(9)Ge(4-x)Si(x) (0?≤?x?≤?4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T(K) from approximately 3.5?K for CeNi(9)Ge(4) to about 70?K for CeNi(9)Si(4). This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi(9)Ge(4) to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi(9)Si(4) (T(K)?~?Δ(CF)).  相似文献   

14.
The Cu site substitution effects on the Hall coefficient RH and the electrical resistivity have been studied for La2−xSrxCuO4. In a small x region, RH decreases largely with Zn doping and increases with Ni doping. In the Ni doped samples, shows the characteristic temperature dependence similar to those of the unsubstituted samples where the decrease of the slope of vs. T curve is observed for x<0.1 above 600K but in the Zn doped samples, the change of the slope of becomes smaller,i.e. the temperature dependence of below 600K becomes smaller. These results indicate that the origin of the change of the slope of around 600K for x<0.1 is magnetic and the spin correlation or the electronic state is rather different below and above 600K. The unusual Zn doping dependences of RH and are naturally explained by considering that the electronic state at high temperatures above 600K which has a small Hall coefficient expected for the large Fermi surface comes down to lower temperatures by the Zn doping.  相似文献   

15.
We present a study of the spin dynamics of magnetic defects induced by Li substitution of the plane Cu in the normal state of YBa2Cu3O6+x. The fluctuations of the coupled Cu magnetic moments in the vicinity of Li are probed by near-neighbor 89Y and 7Li NMR spin lattice relaxation. The data indicate that the magnetic perturbation fluctuates as a single entity with a correlation time tau which scales with the local static susceptibility. This behavior is reminiscent of the low T Kondo state of magnetic impurities in conventional metals. Surprisingly it extends well above the "Kondo" temperature for the underdoped pseudogapped case.  相似文献   

16.
司继伟  曹庆琪  顾本喜  都有为 《中国物理》2005,14(10):2117-2121
A series of polycrystalline Cu-doped n=2 Ruddlesden-Popper manganates La1.2Sr1.8CuzMn(2-x)O7 (x=0, 0.04, 0.13) were synthesized by the solid state reaction method. The effect of Cu doping on the magnetic and transport properties has been studied. It is found that Cu substitution for Mn greatly affects the magnetic and electrical properties of the parent phase La1.2Sr1.8Mn2O7. With the increase of Cu content, the system undergoes a transition from longrange ferromagnetic order to the spin glass state and further to an antiferromagnetic order. A little of Cu dopant can lead to the samples showing semiconductor or insulator behaviour in the whole observed temperature range while the parent phase has a metal-insulator transition. These samples show colossal magnetoresistance at low temperatures and the value of it decreases with increasing Cu content.  相似文献   

17.
Pressure- and temperature-dependent heat capacity and electrical resistivity experiments on Sn- and La-doped CeRhIn5 are reported for two samples with specific concentrations, Ce(0.90)La(0.10)RhIn5 and CeRhIn(4.84)Sn(0.16), which present the same TN=2.8 K. The obtained P-T phase diagrams for doped CeRhIn5 compared to that for the pure compound show that Sn doping shifts the diagram to lower pressures while La doping does exactly the opposite, indicating that the important energy scale to define the pressure range for superconductivity in CeRhIn5 is the strength of the on-site Kondo coupling.  相似文献   

18.
研究了溶胶 -凝胶法制备氧化物巨磁电阻材料的工艺 ,制备了La0 .7Sr0 .3 CrxMn1-xO3 (x =0 ,0 .10 ,0 .15 )和La0 .7Sr0 .3 FexMn1-xO3 (x =0 .0 5 ,0 .10 ,0 .16 )两系列的单相钙钛矿锰氧化物多晶样品 ,并研究了Cr ,Fe替代La0 .7Sr0 .3 MnO3 中部分Mn后对其结构、磁性和巨磁电阻性质的影响 .观察到La0 .7Sr0 .3 Cr0 .15Mn0 .85O3 和La0 .7Sr0 .3 Fe0 .0 5Mn0 .95O3 两个样品的电阻 温度曲线都出现了双峰 .定性讨论了可能产生双峰的机制 .随Cr(或Fe)替代量的增加 ,材料的居里温度很快下降 ,铁磁性减弱 ,导电性降低 ,巨磁电阻效应增强 .但与Fe掺杂相比 ,相同数量的Cr掺杂对材料的影响要小 .  相似文献   

19.
We report an optical spectroscopy study on intermediate valence system Yb_(1-x)Lu_xAl_3 with x = 0, 0.25, 0.5, 0.75, and 1. The Kondo temperature in the system is known to increase with increasing Lu concentration. Therefore, it is expected that the energy scale of the hybridization gap should increase with increasing Lu concentration based on the periodic Anderson model. On the contrary, we find that the spectral structure associated with the hybridization effect shifts monotonically to lower energy. Furthermore, the Lu substitution results in a substantial increase of the free carrier spectral weight and less pronounced plasma frequency reduction upon lowering temperature. We attribute the effect to the disruption of the Kondo lattice periodicity by the random substitution of Yb by Lu. The work highlights the importance of the lattice periodicity of the rare earth element for understanding the Kondo lattice phenomena.  相似文献   

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