Temperature-dependent photoluminescence of CuInS2 quantum dots

Temperature-dependent photoluminescence (PL) spectroscopy of CuInS₂ core and CuInS₂/ZnS core–shell quantum dots (QDs) was studied for understanding the influence of a ZnS shell on the PL mechanism. The PL quantum yield and lifetime of CuInS₂ core QDs were significantly enhanced after the QD surface was coated with the ZnS shell. The temperature dependences of the PL energy, linewidth, and intensity for the core and core–shell QDs were studied in the temperature range from 92 to 287 K. The temperature-dependent shifts of 98 meV and 35 meV for the PL energies of the QDs were much larger than those of the excitons in their bulk semiconductors. It was surprisingly found that the core and core–shell QDs exhibited a similar temperature dependence of the PL intensity. The PL in the CuInS₂/ZnS core–shell QDs was suggested to originate from recombination of many kinds of defect-related emission centers in the interior of the cores.     

Influence of simultaneous doping of Sb and Pb on phase formation,superconducting and microstructural characteristics of HgBa2Ca2Cu3O8+δ

We report systematic studies of structural, microstructural and transport properties of (Hg_0.80Sb_0.2−xPb_x)Ba₂Ca₂Cu₃O_8+δ (where x = 0.0, 0.05, 0.1, 0.15, 0.2) compounds. Bulk polycrystalline samples have been prepared by two-step solid-state reaction route at ambient pressure. It has been observed that simultaneous substitution of Sb and Pb at Hg site in oxygen deficient HgO_δ layer of HgBa₂Ca₂Cu₃O_8+δ cuprate high-T_c superconductor leads to the formation of Hg-1223 as the dominant phase. Microstructural investigations of the as grown samples employing scanning electron microscopy reveal single crystal like large grains embodying spiral like features. Superconducting properties particularly transport current density (J_ct) have been found to be sensitive to these microstructural features. As for example (Hg_0.80Sb_0.05Pb_0.15)Ba₂Ca₂Cu₃O_8+δ compound which exhibits single crystal like large grains (∼50 μm) and appears to result through spiral growth mechanism, shows highest J_ct (∼1.85 × 10³ A/cm²) at 77 K. A possible mechanism for the generation of spiral like features and correlation between microstructural features and superconducting properties have been put forward.     

Topmost-surface-sensitive Si-2p photoelectron spectra of clean Si(1 0 0)-2 × 1 measured with photoelectron Auger coincidence spectroscopy

Topmost-surface-sensitive Si-2p photoelectron spectra of a clean Si(1 0 0)-2 × 1 surface have been measured using Si-2p photoelectron Si-L₂₃VV Auger coincidence spectroscopy (Si-2p–Si-L₂₃VV PEACS). The escape depth of the PEACS electrons is estimated to be ～1.2 Å. The results support the assignments of the Si up-atoms, the Si down-atoms, the Si 2nd-layer, and the Si bulk proposed in previous researches. The Si-2p component with a binding energy of ?0.23 eV relative to the bulk Si-2p_3/2 peak, is shown to originate mainly from the topmost surface. Site selectivity of PEACS is indicated to be achieved to some degree by carefully selecting the kinetic energy of the Auger electrons. Since PEACS can be applied to any surface, the present study opens a new approach to identify PES components.     

Surface and bulk properties of CuGaSe2 thin films

Using complementary techniques, namely X-ray fluorescence (XRF) and X-ray photoelectron spectroscopy (XPS), we present a comparative study of the bulk and surface composition in device grade CuGaSe₂ (CGSe) thin films. The films were deposited in two stages by an open-tube chemical vapor deposition (CVD) process. The first stage leads to a nearly stoichiometric polycrystalline CGSe film of approximately 1.5 μm thickness. During the second stage the film is annealed in a Ga- and Se-rich atmosphere. While the XRF-data show a nearly stoichiometric integrated film composition, the surface composition, as determined by XPS analysis, is Cu-poor, pointing towards a highly non-stoichiometric surface layer. In addition, sodium was found at the film surfaces. The data are discussed in the framework of an ordered defect compound formation and the formation of a (Cu,Na)–Ga–Se compound at the surface of the CuGaSe₂ films. Complementary ultraviolet photoelectron- and inverse photoelectron spectroscopy investigations of the film surface derive a widening of the surface energy band gap up to 2.2 eV in comparison with a bulk energy band gap around 1.65 eV (obtained by optical transmission analysis). The observed data are consistent with our model of a two layer film structure containing a defect-rich near-surface region and a defect-poor bulk.     

TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 × 7), SiO_x/Si(111) and TiO₂. These surfaces represent the different surface compositions encountered during TTIP mediated TiO₂ chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process.     

XPS and SRUPS study of oxygen adsorption on Cd0.9Zn0.1Te (1 1 1)A surface

Synchrotron radiation ultraviolet photoemission spectroscopy (SRUPS) and X-ray photoelectron spectroscopy (XPS) have been applied to investigate oxygen adsorption on a cadmium zinc telluride (CZT) (1 1 1)A surface. The surface chemical composition and the surface oxidation process were monitored by recording the Te 3d, O 1s, Zn 2p, Cd 4d core level peaks, and the Cd MNN Auger peak. The CZT (1 1 1)A surface was effectively oxidized by dosing oxygen directly. The typical surface state of the clean CZT (1 1 1)A surface was identified. After oxygen exposure, this surface state disappeared and a signal due to the formation of O–CZT appeared. In addition, the work function of CZT decreased with the increasing oxygen exposure.     

X-ray photoelectron spectroscopy of LiM0.05Mn1.95O4 (M = Ni,Fe and Ti)

LiMn₂O₄ and LiM_0.05Mn_1.95O₄ (M = Ni, Fe and Ti) were synthesized by using solid-state reactions and their surface stoichiometries were confirmed by XPS data. The crystal and electronic structures were investigated by using X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). XRD data suggested that LiM_0.05Mn_1.95O₄ possesses nearly no any variations in lattice parameters compared with LiMn₂O₄ for slight substitution of Ni, Fe and Ti; the substituted Ni, Fe and Ti ions were located on the 16d octahedral sites in the spinel crystal lattice. The XPS results suggested that Fe and Ti ions were at + 3 and + 4 oxidation states, respectively; while Ni ions are mixed with + 2 and + 3 oxidation states. The normal oxidation state of Mn ions in the above four materials is almost the same and calculated as + 3.55 according to the splitting energies of Mn3s states.     

Core hole and surface excitation correction parameter for XPS peak intensities

In XPS analysis, surface excitations and excitations originating from the static core hole created during the photoexcitation process are usually neglected. However, both effects significantly reduce the measured peak intensity. In this paper we have calculated these effects. Instead of considering the two effects separately, we introduce a new parameter, namely the Correction Parameter for XPS (or CP_XPS) defined as the change in probability for emission of a photoelectron caused by the presence of the surface and the core hole in comparison with the situation where the core hole is neglected and the electron travels the same distance in an infinite medium. The CP_XPS calculations are performed within the dielectric response theory by means of the QUEELS-XPS software determining the energy-differential inelastic electron scattering cross-sections for X-ray photoelectron spectroscopy (XPS) including surface and core hole effects. This study has been carried out for electron energies between 300 eV and 3400 eV, for angles to the surface normal between 0° and 60° and for various materials, especially metals, semiconductors and oxides. For geometries and energies normally used in XPS, i.e. for emission angle ≤ 60° and photoelectron energy ≤ 1500 eV, we find that CP_XPS values are significantly larger for oxides, (0.55 ? CP_XPS ? 0.75) than for metals and semiconductors (0.45 ? CP_XPS ? 0.6). We show that this behavior is due to the difference in the wave vector dispersion of the energy loss function. This dispersion has been determined from analysis of REELS and is found to be free electron like (α ? 1) for metals but is substantially smaller (α ≈ 0.02–0.05) for materials with a wide band gap. As a result, the group velocity of the valence electrons is very small for oxides with a large band gap. This leads to a reduction in the screening of the core-hole potential before the photoelectron has left the region of interaction and thereby to an increase in the intrinsic excitations caused by the core hole.     

Structural,dielectric and impedance properties of NaCa2V5O15 ceramics

Polycrystalline sample of NaCa₂V₅O₁₅ (NCV) with tungsten bronze structure was prepared by a mixed oxide method at relatively low temperature (i.e. 630 °C). Preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Microstructural study showed that the grains are uniformly and densely distributed over the surface of the sample. Detailed studies of dielectric properties showed that the compound has dielectric anomaly above the room temperature (i.e. 289 °C), and shows hysteresis in polarization study. The electrical parameters of the compound were studied using complex impedance spectroscopy technique in a wide temperature (23–500 °C) and frequency (10²–10⁶ Hz) ranges. The impedance plots showed only bulk (grain) contributions, and there is a non-Debye type of dielectric dispersion. Complex modulus spectrum confirms the grain contribution only in the compound as observed in the impedance spectrum. The activation energy, calculated from the ac conductivity of the compound, was found to be 0.20–0.30 eV. These values of activation energy suggest that the conduction process is of mixed type (i.e. ionic–polaronic).     

Surface and core hole effects in X-ray photoelectron spectroscopy

In XPS analysis, two effects, which significantly reduce the measured peak intensity, are usually neglected: the core hole left behind in an XPS process which causes “intrinsic” excitations and excitations as the photoelectron pass through the surface region. We have calculated these effects quantitatively for various energies, geometries, and materials. Instead of considering the two effects separately, we introduce a new parameter, namely the correction parameter for XPS or CP_XPS, which takes into account both effects. We define this CP_XPS as the change in probability for emission of a photoelectron caused by the presence of the surface and the core hole in comparison with the situation where the core hole is neglected and the electron travels the same distance in an infinite medium. The calculations are performed within the dielectric response theory by means of the QUEELS–XPS software determining the energy-differential inelastic electron scattering cross-sections for X-ray photoelectron spectroscopy (XPS) including surface and core hole effects. This study has been carried out for electron energies between 300 eV and 3400 eV, for angles to the surface normal between 0° and 60° and for various materials. We find that the absolute effect is a reduction by 35–45% in peak intensities but that the variation in CP_XPS with material, angle and energy are < ± 10% for emission angle ≤ 60° and photoelectron energy ≤ 1500 eV. This implies that when XPS analysis is done using relative intensities, the combined effect of the surface and of the core hole is typically less than ≈ ± 10% for geometries and energies normally used in XPS. In practice, it is however difficult to determine the bare peak intensity without the intrinsic electrons because the two overlap in energy.     

Investigation on the microscopic features of layered oxide Li[Ni1 / 3Co1 / 3Mn1 / 3]O2 and their influences on the cathode properties

Three kinds of samples of Li[Ni_1 / 3Co_1 / 3Mn_1 / 3]O₂ were prepared respectively from direct solid-state reaction method, combustion method and co-precipitation route and their microscopic structural features have been investigated using Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), magnetic susceptibility measurement and X-ray photoelectron spectroscopy (XPS). The microscopic features such as uniform distribution of transition metal ions at 3b-site and the site-exchange ratio between lithium and nickel were found to be significantly dependent on the synthetic routes. The electrochemical properties of three samples were monitored using 2016 coin-cell by galvanostatic charge–discharge cycling test and cyclic voltammetry, which showed that the microscopic structural features are deeply related with the electrochemical performance. The obtained results also suggested that the combustion method may become a much simple alternative synthetic route to the complicate co-precipitation method.     

The local adsorption of pyridine on Si(100) a combined PES and XPD study

The chemical and geometrical properties of the system pyridine on Si(100) are investigated in a combined photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD) study. Synchrotron radiation was applied to achieve high spectral resolution and a high surface sensitivity. Our studies were performed at saturation coverage of pyridine on silicon. The XPS and XPD results, including diffraction patterns for all spectral resolved components, clearly show that pyridine is reacting with silicon dimer atoms of the (2 × 1)-reconstructed surface. We propose a tetra-σ-bonded structure model and provide detailed structure parameters.     

Growth,structure, and thermal stability of epitaxial BaTiO3 films on Pt(111)

The growth of epitaxial ultrathin BaTiO₃ films upon rf magnetron sputter deposition on a Pt(111) substrate has been studied by scanning tunnelling microscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. The BaTiO₃ films have been characterized from the initial stages of growth up to a film thickness of 4 unit cells. The deposited films develop a long-range order upon annealing at 1050 K in UHV. In the submonolayer regime a wetting layer is formed on Pt(111). Thicker films reveal a Stranski–Krastanov-like structure as observed with STM. By XPS a good agreement of the thin film stoichiometry with BaTiO₃ single crystal data is determined. Due to annealing at 1150 K BaTiO₃ forms large two-dimensional islands on the Pt(111) substrate. Different surface structures develop on the islands depending on the O₂ partial pressure during annealing.     

Adsorption and decomposition of NO on Pt (112)

Adsorption and decomposition of NO on Pt (1 1 2) have been studied by temperature programmed desorption (TPD), ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). NO adsorbs molecularly on Pt (1 1 2) at 95 K. About half amount of NO molecules adsorbs at the terrace sites and remaining half amount adsorbs at the step sites at a full monolayer coverage. Then about half of NO molecules adsorbed at step sites decomposes at around 483 K desorbing N₂, promptly.     

SnO2-decorated multiwalled carbon nanotubes and Vulcan carbon through a sonochemical approach for supercapacitor applications

Multiwalled carbon nanotubes (MWCNTs) and Vulcan carbon (VC) decorated with SnO₂ nanoparticles were synthesized using a facile and versatile sonochemical procedure. The as-prepared nanocomposites were characterized by means of transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infra red spectroscopy. It was evidenced that SnO₂ nanoparticles were uniformly distributed on both carbon surfaces, tightly decorating the MWCNTs and VC. The electrochemical performance of the nanocomposites was evaluated by cyclic voltammetry and galvanostatic charge/discharge cycling. The as-synthesized SnO₂/MWCNTs nanocomposites show a higher capacity than the SnO₂/VC nanocomposites. Concretely, the SnO₂/MWCNTs electrodes exhibit a specific capacitance of 133.33 F g⁻¹, whereas SnO₂/VC electrodes exhibit a specific capacitance of 112.14 F g⁻¹ measured at 0.5 mA cm⁻² in 1 M Na₂SO₄.     

Photoemission study of interfacial reactions during annealing of ultrathin yttrium on SiO2/Si(1 0 0)

X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and work-function measurements have been used to investigate the Y/SiO₂/Si(1 0 0) interfaces in situ as a function of annealing temperature. The results show that yttrium is very reactive with SiO₂ and can react with SiO₂ to form Y silicate and Y₂O₃ even at room temperature. Annealing leads to the continual growth of the Y silicate. Two distinctive reaction mechanisms are suggested for the annealing processes below and above 600 K. The reaction between metallic yttrium and SiO₂ dominates the annealing processes below 600 K, while at annealing temperatures above 600 K, a reaction between the new-formed Y₂O₃ and SiO₂ becomes dominant. No Y silicide is formed during Y deposition and subsequent annealing processes. UPS valence-band spectra indicate the silicate layer is formed at the top surface. After 1050 K annealing, a Y-silicate/SiO₂/Si structure free of Y₂O₃ is finally formed.     

EUV and soft X-ray photoelectron spectroscopy of isolated atoms and molecules using single-order laser high-harmonics at 42 eV and 91 eV

Photoelectron spectroscopy of isolated atoms and molecules using single-order high-harmonics of Ti:Sapphire laser pulses (800 nm, 12 fs/30 fs) is demonstrated. Dielectric multilayer mirrors, SiC/Mg and Mo/Si, are used to isolate the 27th (42 eV) and 59th (91 eV) order harmonics, respectively. The obtained harmonics are characterized by valence and inner-shell photoelectron spectroscopy of Xe. The applications to two-color two-photon ionization of He and pump-probe spectroscopy of ultrafast photodissociation of Br₂, Br₂(C¹Π_u) → Br(²P_3/2) + Br(²P_3/2), are presented.     

BaT2As2 single crystals (T = Fe,Co, Ni) and superconductivity upon Co-doping

The crystal structure and physical properties of BaFe₂As₂, BaCo₂As₂, and BaNi₂As₂ single crystals are surveyed. BaFe₂As₂ gives a magnetic and structural transition at T_N = 132(1) K, BaCo₂As₂ is a paramagnetic metal, while BaNi₂As₂ has a structural phase transition at T₀ = 131 K, followed by superconductivity below T_c = 0.69 K. The bulk superconductivity in Co-doped BaFe₂As₂ below T_c = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe_1.84Co_0.16As₂ indicate the inter-band scattering due to Co is weak.     

Preparation,surface state and band structure studies of SrTi(1 − x)Fe(x)O(3 − δ) (x = 0–1) perovskite-type nano structure by X-ray and ultraviolet photoelectron spectroscopy

In this report, SrTi_(1 ? x)Fe_(x)O_(3 ? δ) photocatalyst powder was synthesized by a high temperature solid state reaction method. The morphology, crystalline structures of obtained samples, was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscopy (TEM), respectively. The electronic properties and local structure of the perovskite STF_x (0 ≤ x ≤ 1) systems have been probed by extended X-ray absorption fine structure (EXAFS) spectroscopy. The effects of iron doping level x (x = 0–1) on the crystal structure and chemical state of the STF_x have been investigated by X-ray photoelectron spectroscopy and the valence band edges for electronic band gaps were obtained for STF_x by ultraviolet photoelectron spectroscopy (UPS). A single cubic perovskite phase of STF_x oxide was successfully obtained at 1200 °C for 24 h by the solid state reaction method. The XPS results showed that the iron present in the STF_x perovskite structure is composed of a mixture of Fe³⁺ and Fe⁴⁺ (SrTi_(1 ? x)[Fe³⁺, Fe⁴⁺]_(x)O_(3 ? δ)). When the content x of iron doping was increased, the amount of Fe³⁺ and Fe⁴⁺ increased significantly and the oxygen lattice decreased on the surface of STF_x oxide. The UPS data has confirmed that with more substitution of iron, the position of the valence band decreased.