Sm2+掺杂的无机光谱烧孔材料量子效率研究

本文由光谱烧孔的发光动力学方程出发,推导了脉冲光烧孔并选通的情况下量子效率的表达式.在77K下测量了以不同功率的560nm脉冲光烧孔并选通的条件下,孔深随烧孔脉冲数目的变化,验证了烧孔的量子效率与选通光强度的关系.在相同的烧孔条件下测量了BaF(Cl,Br):Sm²⁺与SrF(Cl,Br):Sm²⁺的孔深随脉冲数目的变化,验证了量子效率与⁵D_J-⁷F₀跃迁几率的关系.     

光子选通光谱烧孔的全息检测与图像存贮

报道在有机光子选通光谱烧孔材料苯基四苯并卟啉锌/芳晴系统中，进行全息光谱烧孔和图像存贮的实验结果．实验表明全息烧孔极大地提高了光谱孔的检测灵敏度和信噪比．通过全息光子选通光谱烧孔，成功地进行了光子选通型的频率选择的多幅全息图存贮，得到清晰的图像再现 关键词：     

980 nm LD泵浦Er3+/Yb3+共掺Y2O3纳米粉所致热效应的研究

利用溶胶—凝胶方法制备了Er3+和Yb3+共掺杂的Y₂O₃纳米荧光粉。采用Er3+的2H_11/2→4I_15/2和4S_3/2→4I_15/2绿色上转换荧光强度比的方法,研究了由980 nm二极管激光器泵浦所导致的荧光粉样品表面温升现象。结果表明,随着泵浦功率的增加,样品表面温度大幅度上升, 当功率达到1 000 mW时,样品表面的温度达到820 K。该现象对分析稀土离子上转换过程中所出现的功率饱和现象起着重要的作用,并且在高温传感材料、医学生物细胞烧孔方面有着广阔应用前景。     

无机材料BaFCl0.5Br0.5：Sm^2＋光子选通光谱烧孔

本文报道了无机材料的BaFCl_(0.5)Br_(0.5):Sm~(2+)的光子选通光谱烧孔.文中叙述了光子选通光谱烧孔的机制.在低温4.2K下进行多孔烧孔和探测.测量了孔的选通性和稳定性.实现了孔的可擦除和重复烧孔.测量结果表明,处于4.2K的BaFCl_(0.5)Br_(0.5):Sm~(2+)样品,在一个非均匀加宽轮廓内可实现1×10~3个以上数目的永久性光谱烧孔.     

RE2Ti2O7(RE=Gd,Y,Ho,Er)的结构、机械性能及热学性质的第一性原理研究(英文)

本文利用第一性原理和准谐近似的方法研究了一系列钛酸盐烧绿石,即RE₂Ti₂O₇（RE=Gd,Y,Ho,Er）的结构、机械性能及热学性质。研究结果表明,在基态下RE₂Ti₂O₇具有良好的抗压、抗剪切能力。并且,由于这些化合物的齐纳指数接近于1,可近似地看作各向同性材料。此外,计算得到的热膨胀系数在高温区与实验值符合得较好。在500~1 500 K温度区间内,平均热膨胀系数为（10.4~13.1）×10-6 K-1。基于Slack模型,我们还计算了这些材料的晶格热导率,当温度等于1 000 K时,这四种物质的热导率在区间（1.5~4.9）W·m-1·K-1内。     

不同选通条件下对光谱烧孔孔深的研究

本文从理论上分析了低激发密度下,选通光分别为脉冲光和连续光时,孔深随时间的变化,得到可以通过脉冲光烧孔、连续光选通的方法缩短烧孔时间.应用BaFCl_0.5Br_0.5:Sm²⁺(2%)进行了实验,分析了单脉冲烧孔的孔深.     

卟啉类有机体系THP／PMMA的永久性光谱烧孔

首次报道了四-对羟基苯基卟吩/有机玻璃体系(THP/PMMA)的单光子永久性光谱烧孔.研究了烧孔特性和成孔条件.测量了孔的稳定性,在液氦温度下孔的保存时间已超过几个小时.实现了孔的擦除和重复烧孔.探讨了烧孔机制,认为激光诱导质子转位变构是导致该体系永久性光谱烧孔的原因.     

BaFCl0.5Br0.5:Sm2+的荧光特性分析

本文是对无机光谱烧孔的典型材料BaFCl_0.5Br_0.5:Sm²⁺的发光动力学过程进行的探索。通过实验得到了⁵D₂、⁵D₁、⁵D₀→⁷F₀的荧光强度、荧光衰减曲线随温度的变化关系,对⁵D₂→4f5d带的热激活、⁵D_J间的无辐射弛豫,⁵D_J→⁷F₀的辐射跃迁等过程进行了分析。     

基于上转换发光的Y7O6F9:Er,Yb/PAN复合纤维温度传感特性

通过水热法配合高温煅烧合成了斜方晶系Y₇O₆F₉:Er,Yb晶体,该晶体可实现高效上转换发光且具有良好的高分子亲和性。利用高压静电纺丝技术将Y₇O₆F₉:Er,Yb晶体颗粒与高分子化合物聚丙烯腈(PAN)复合,制备出了兼备温度传感特性、柔韧性和灵活性的Y₇O₆F₉:Er,Yb/PAN纤维。977 nm激光激发下,晶体颗粒和复合纤维在303～433 K温度范围内均展示出高效的上转换发光和良好的温度传感特性,且复合纤维在测温范围内表现出优于晶体颗粒的温度灵敏度和分辨率。在303 K温度下有最大绝对灵敏度值1.143%·K^-1,在433 K温度下有最小的分辨率0.15 K。因此,具有柔韧性的复合纤维既有良好温度传感特性又可任意调节形态,适应复杂多样的应用环境,是可应用于实现智能穿戴领域温度传感性能的有效候选材料。     

CoFe2O4纳米颗粒的结构、磁性以及离子迁移

聚乙烯醇(PVA)溶胶凝胶法制备出CoFe₂O₄纳米微粉，用X射线衍射研究了铁氧体纳米颗粒的结构.测量了CoFe₂O₄纳米颗粒80—873 K的变温穆斯堡尔谱，发现纳米颗粒的磁转变温度范围为793—813 K，比块体材料的磁性转变温度要低.CoFe₂O₄纳米颗粒的德拜温度θ_A=674 K，θ_B=243 K，比块体材料要小.CoFe₂O₄纳米颗粒超精细场H_f随温度的变化符合T^3/2+T^5/2定理.当温度较高时，平均同质异能移IS随温度的升高而减小，并呈线性关系. 关键词： 纳米颗粒 磁性 穆斯堡尔谱     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γ_h) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γ_h larger than 3300. The dependence of writing power, electric field, and temperature on the Γ_h was also investigated using hole burning spectroscopy. The Γ_h broadened not only as the writing power increased over a few W/cm² but also as the applied field increased. The Γ_h showed linear dependence on temperature, and the spectral hole was observed up to 80 K.     

Resonant fluorescence line narrowing and gain spectral hole burning in erbium-doped fiber amplifier

Gain spectral hole burning and resonant fluorescence line narrowing have been performed at low temperature in standard aluminosilicate erbium-doped fiber amplifier to demonstrate the nature of the line broadening. Comparison of the hole-width measurements with resonant fluorescent line narrowing data shows a good agreement at 77 K, working temperature for which both experiments are feasible and have been performed simultaneously. The FWHM results reported here compare well with the earlier line profile measurements performed on aluminosilicate glass preform of the same chemical composition as the fiber. The pump power dependences are reported and indicate that they influence both the depth and line width, which may induce a limitation for wavelength division multiplexing techniques in the long-haul transmission regime of telecommunications.     

The temperature broadening of purely electronic lines by the hole burning technique

The hole burning method has been employed for measuring the homogeneous contours of the purely electronic line in the luminescence of the H₂-tetra-4-tert-butylphtalocyanine molecule in solid tetradecane. A near-quadratic temperature dependence of the linewidth in the region of 6–30 K has been obtained and is interpreted as the result of electron—vibrational coupling with a pseudolocal vibration of 36 cm^?1.     

Optical decoherence times and spectral diffusion in an Er-doped optical fiber measured by two-pulse echoes, stimulated photon echoes, and spectral hole burning

Two-pulse and stimulated photon echoes and spectral hole burning were measured on the transition from the lowest component of the ⁴I_15/2 manifold to the lowest component of ⁴I_13/2 of Er³⁺ in a silicate optical fiber at 1.6 K. The two-pulse echo decays gave decoherence times as long as 230 ns for magnetic fields above 2 T. A large field dependent contribution to the homogeneous line width of >2 MHz was found and interpreted in terms of coupling to magnetic tunneling modes (TLS) in the glass. The stimulated echoes measured at 2 T showed spectral diffusion of 0.8 MHz/decade of time between 0.4 and 500 μs. Spectral diffusion in this high field region is attributed to coupling to elastic TLS modes which have a distribution of flip rates in glasses. Time-resolved spectral hole burning at very low field showed stronger spectral diffusion of 5.7 MHz/decade of time, attributed to coupling to magnetic spin-elastic TLS modes.     

BaSO4Sm^2＋晶体的光谱及光子选通烧孔效应

首次报道—种新的无机光子造通光谱烧孔材料——BaSO_4:Sm~ (2+)的烧孔效应.并给出了有关光谱性质的实验结果.     

Fluorescence and persistent spectral hole burning of Eu in Ge-Ga-S-KBr glasses

Fluorescence and efficient persistent spectral hole burning of Eu³⁺ at 77 K were observed in chalcohalide glasses. The depth of the hole was approximately 30% after a burning process of 1 min with 50 mW power, and it was completely erased with Ar⁺ laser irradiation. The hole survived room temperature heat treatment and showed good thermal stability. The hole-burning mechanism was most probably the photo-reduction of Eu³⁺→Eu²⁺. Fluorescence from Eu³⁺ decreased with increasing temperature and disappeared at the temperature above ∼130 K.     

Pressure induced spectral diffusion as investigated by linewidth studies of polymers doped with dye molecules

Photochemical hole burning at 1.5 K was used to study the influence of uniaxial pressure on the homogeneous line profile of the S₁←S₀ transition of free base phthalocyanine in polyethylene (PE) and polymethylmethacrylate (PMMA) matrices. The line profiles which were observed show already at pressure changes which were as small as 100 hPa substantial broadening effects. At higher pressures of up to 3 x 10⁴ hPa we observed irreversible line broadening phenomena, which we attribute to irreversible site changes of the host-guest system.     

Spectral hole burning of photosynthetic antenna of blue-green algae

Photosystem II core antenna of blue-green algae Synechococcus isolated in gel was studied by optical hole burning spectroscopy at 4·2 K. Persistent holes were burned into fluorescence spectra throughout the region 680–696 nm. The hole width extrapolated to zero burning fluence yielded a value 1·0±0·2 cm^–1. A theoretical interpretation of the hole profile in fluorescence is presented. The dependence of saturated hole depth on burning wavelength is related to inhomogeneous site distribution function.Authors would like to thank F. Vácha from the Dept. of Biochemistry, Faculty of Nature Sciences, Charles University, for the preparation of the samples.     

Controllable broadening of zero-phonon lines by means of the Doppler effect and prospects of using spectral hole burning in optical informatics

An attempt is made to extend the spectacular variant of optical informatics efficient at liquid helium temperature—holography based on zero-phonon lines (ZPLs) and spectral hole burning, including time-and-space-domain holography—to higher temperatures, up to room temperature. At room temperature, both optical and Mössbauer narrow ZPLs exist; however, they do not have the inhomogeneous broadening that transforms a ZPL into a broad band, which is necessary for informatics based on light pulses. The idea of producing a band with an appropriate width from narrow ZPLs by using the Doppler effect is advanced. A variant of experimental realization of this idea by means of a scheme with a rotating disk covered by a layer of a material sensitive to spectral hole burning is considered. Numerical estimates were performed for narrow optical ZPLs and for the yet experimentally unconfirmed Mössbauer ZPL in the visible spectral range (dark blue nuclear light) that corresponds to a transition between the two low-lying levels of the ²²⁹Th isomer. For the narrowest optical ZPLs known at present, with a width of about 100 Hz, the estimates give favorable results, in particular, for prospects of realizing a photoelectrically accumulated stimulated photon echo.