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Sm2+掺杂的无机光谱烧孔材料量子效率研究
引用本文:宋宏伟,张家骅.Sm2+掺杂的无机光谱烧孔材料量子效率研究[J].发光学报,1996,17(1):12-16.
作者姓名:宋宏伟  张家骅
作者单位:中国科学院长春物理研究所, 中国科学院激发态物理开放研究实验室, 长春130021
摘    要:本文由光谱烧孔的发光动力学方程出发,推导了脉冲光烧孔并选通的情况下量子效率的表达式.在77K下测量了以不同功率的560nm脉冲光烧孔并选通的条件下,孔深随烧孔脉冲数目的变化,验证了烧孔的量子效率与选通光强度的关系.在相同的烧孔条件下测量了BaF(Cl,Br):Sm2+与SrF(Cl,Br):Sm2+的孔深随脉冲数目的变化,验证了量子效率与5DJ-7F0跃迁几率的关系.

关 键 词:光谱烧孔  量子效率  跃迁几率
收稿时间:1995-03-09

INVESTIGATION ON HOLE-BURNING QUANTUM EFFICIENCY OF Sm2+ DOPED IN INORGANIC MATERIALS
Song Hongwei, Zhang jiahua, Huang Shihua, Yu Jiaqi.INVESTIGATION ON HOLE-BURNING QUANTUM EFFICIENCY OF Sm2+ DOPED IN INORGANIC MATERIALS[J].Chinese Journal of Luminescence,1996,17(1):12-16.
Authors:Song Hongwei  Zhang jiahua  Huang Shihua  Yu Jiaqi
Institution:Laboratory of the Excited State Proceses Academy of Sciences, Changchun 130021
Abstract:n this paper we derived hole-burning quantum efficiency by the luminescent dynamical equations under the condition of pumping and gating with a pulsed laser. Holeburning were perfomed at 77K by a 560 nm laser with different laser power. The dependence of hole depth on pulse number were observed and hole burning quantum efficiency with different laser power were obtained. The dependence of hole-burning quantum efficiency on 5DJ-7F0 transition probability were proved by measuring the dependence of hole depth on pulse number in BaF(Cl,Br): Sm2+ and in SrF(Cl,Br): Sm2+ under the same burning condition.
Keywords:hole burning  quantum efficiency  transition probability
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