不同选通条件下对光谱烧孔孔深的研究

本文从理论上分析了低激发密度下,选通光分别为脉冲光和连续光时,孔深随时间的变化,得到可以通过脉冲光烧孔、连续光选通的方法缩短烧孔时间.应用BaFCl_0.5Br_0.5:Sm²⁺(2%)进行了实验,分析了单脉冲烧孔的孔深.     

不同选通条件下对光谱烧孔孔深的研究

本文从理论上分析了低激发密度下，选通光分别为脉冲光和连续光时，孔深随时间的变化，得到可以通过脉冲光烧孔、连续光选通的方法缩短烧孔时间．应用ＢａＦＣｌ０．５Ｂｒ０．５：Ｓｍ２＋（２％）进行了实验，分析了单脉冲烧孔的孔深．     

Ce3+/Tb3+/Sm3+共掺CaO-B2O3-SiO2玻璃的光学性能调控

采用高温熔融法制备了Ce³⁺/Tb³⁺/Sm³⁺掺杂的CaO-B₂O₃-SiO₂（CBS）发光玻璃。通过傅利叶红外光谱仪、荧光光谱仪表征了该系列发光玻璃的微观结构和发光性质,并对Ce³⁺到Tb³⁺、Ce³⁺到Sm³⁺之间的能量传递机制进行了研究。结果表明,在339,378,407 nm激发下,单掺Ce³⁺、Tb³⁺和Sm³⁺的CBS玻璃分别发射紫蓝光、绿光和红光,恰好符合混合合成白光的条件。Ce³⁺/Tb³⁺和Ce³⁺/Sm³⁺双掺CBS玻璃的发射光谱以及Ce³⁺衰减寿命的变化证实了Ce³⁺→Tb³⁺和Ce³⁺→Sm³⁺之间存在能量传递,随Tb³⁺和Sm³⁺浓度增加,Ce³⁺的寿命减小,且传递效率由5.4%和5.7%分别增加至24.0%和27.1%。调节3种稀土离子的掺杂浓度并选择合适的激发波长,实现了发光颜色可调,并最终获得白光发射。     

光谱烧孔中孔的宽度和深度与烧孔光持续时间的关系

本文由光学Bloch方程出发,讨论了二能级系统光谱烧孔中孔宽和孔深与烧孔激光脉冲持续时间的关系.在强场下短脉冲烧孔中,用π脉冲可以得到足够深且宽度小于稳态值的孔.弱场下,孔深与烧孔时间成指数关系.Bloch方程的修正对上述两种条件下烧孔行为的描述无明显影响.以二能级系统光谱烧孔为基础,讨论了永久性光谱烧孔和光子选通光谱烧孔中孔的行为.     

CaWO4：Sm3+荧光粉的发光性质及其能量传递机理

采用沉淀法制备了不同Sm³⁺掺杂浓度的白钨矿结构CaWO₄荧光粉材料. 对CaWO₄:Sm³⁺ 材料的光致发光性质的研究结果表明, 在404 nm光照下样品可以实现色纯度较高的红光发射, 而短波紫外240 nm光照下除Sm³⁺的特征发射外还能观察到CaWO₄自激发发射, 能够获得较强的白光; 实验发现Sm³⁺掺杂浓度为2%时样品的发光强度最高; 通过对实验数据的分析确定了Sm³⁺之间的能量传递类型为电偶极-电偶极相互作用, 并计算了能量传递的临界距离大约为2.0 nm. 关键词： 光致发光 4：Sm³⁺')" href="#">CaWO₄：Sm³⁺ 荧光寿命 能量传递     

白光LED用Ce3+/Sm3+共掺玻璃和微晶玻璃的发光特性及能量传递研究

采用高温熔融法制备了一系列Ce³⁺/Sm³⁺共掺透明微晶玻璃,并研究了其发光特性。在微晶玻璃中Ce³⁺呈现出基于4f-5d跃迁的较强的宽带蓝光发射,通过调节Ce³⁺/Sm³⁺离子的掺杂浓度,Ce³⁺/Sm³⁺离子共掺微晶玻璃发光的色度逐渐发生变化,当CeO₂/Sm₂O₃掺杂的量比为1:1时,制得的微晶玻璃发光色坐标为(0.315, 0.296)。通过光谱和荧光衰减曲线,研究了Ce³⁺离子到Sm³⁺离子的能量传递,在SAZKNGC_0.6S_0.6微晶玻璃中,Ce³⁺离子向Sm³⁺离子传递能量效率约为20%。结果表明,Ce³⁺/Sm³⁺共掺微晶玻璃是白光LED的一种潜在基质材料。     

几种有机电子转移型光谱烧孔材料的均匀线宽与温度的依赖关系

本文通过在不同温度下对金属卟琳系列光子选通光谱烧孔材料的测试,研究了部分有机电子转移型烧孔材料的均匀线宽随温度变化的关系,在30K到70K温度范围内得到了Γ_hom∝T^1.29±0.05的结果.     

12CaO·7Al2O3/5CaO·3Al2O3：Sm3+新型红色荧光粉的制备及发光性质

采用自蔓延燃烧法制备了不同Sm³⁺掺杂浓度的12CaO·7Al₂O₃（C12A7：x%Sm³⁺）荧光粉。在404 nm近紫外光激发下,观察到了位于565,599,648 nm附近的3个光发射峰,分别归属于Sm³⁺的⁴G_5/2→⁶H_J/2（J=5,7,9）能级跃迁。随着Sm³⁺掺杂浓度增加,红光发射强度呈现了先增大后减小的规律,优化的Sm³⁺掺杂摩尔分数为1.5%,发光的浓度猝灭效应可归因于Sm³⁺之间发生了交叉弛豫过程。采取混相策略,通过降低初始粉体的煅烧温度至900℃获得了12CaO·7Al₂O₃/5CaO·3Al₂O₃：1.5%Sm³⁺（C12A7/C5A3：Sm³⁺）混相荧光粉,进一步提高了红光发射强度。利用变温光致发光谱计算得到混相样品的热激活能约为200 meV,结果表明该混相荧光粉具有良好的热稳定性。     

Na+离子掺杂Gd2O3 ∶ Sm3+纳米晶的发光增强

采用柠檬酸作燃烧剂,在柠檬酸-硝酸盐体系下制备了Gd₂O₃ ∶ Sm³⁺和Gd₂O₃ ∶ Sm³⁺,Na⁺纳米晶。用X射线衍射仪、透射电子显微镜、荧光光谱仪等对样品的结构、形貌和光致发光性能进行了分析。结果表明:所得纳米样品为纯立方相,晶粒尺寸约为30 nm。在室温下,用275 nm激发光激发各样品时,可观测到Sm³⁺离子 的较强发光,其主发射峰位分别位于561.5,603.5,651.5 nm,分别对应着Sm³⁺离子的⁴G_5/2→⁶H_5/2 , ⁴G_5/2→ ⁶H_7/2 和⁴G_5/2 →⁶H_9/2的电子跃迁, 其中以⁴G_5/2→⁶H_7/2 跃迁的光谱强度最强。实验表明:Na⁺离子的掺入使得Sm³⁺离子的光发射强度显著增强。对引起样品荧光强度变化的原因进行了分析。     

Li+离子掺杂Gd2O3：Sm3+纳米晶的发光增强

采用燃烧法制备了Gd₂O₃:Sm³⁺和Li⁺离子掺杂的Gd₂O₃:Sm³⁺纳米晶,根据X射线衍射图谱确定所得纳米样品为纯立方相。在室温下,用275 nm和980 nm激发光激发各样品时,可分别观测到Sm³⁺离子的强荧光发射和上转换特征发射,其主发射峰分别位于560,602,650 nm处,分别对应着Sm³⁺离子的⁴G_5/2→⁶H_5/2,⁴G_5/2→⁶H_7/2和⁴G_5/2→⁶H_9/2的电子跃迁,其中以⁴G_5/2→⁶H_7/2跃迁的光谱强度最大。实验表明Li⁺离子的掺入使得Sm³⁺离子的荧光发射强度显著增加。通过对样品的XRD、TEM和激发光谱、发射光谱的研究,分析了引起样品荧光强度变化的原因。     

The transition probability of DJ-F0 and hole-burning quantum efficiency in the SryBa1−yFCl0.5Br0.5:Sm system

We report the changes of the ⁵D_J-⁷F₀(J = 2, 1, 0) transition probability with composition y and its effect on the hole burning quantum efficiency in the Sr_yBa_1−yFCl_0.5Br_0.5:Sm²⁺ system. We observed that the ⁵D_J-⁷F₀ transition probability increases with the increase of Sr concentration. This result is attributed to the reduction of the energy separation between the ⁵D_J level and the 4f5d bands, which makes the electron wave functions of ⁵D_J states mix further with that of the 4f5d states. The dependence of the hole-burning quantum efficiency on the 5D_J-⁷F₀ transition probability was derived by the dynamical equations of the spectral hole burning of divalent samarium. Furthermore, the hole-burning experiments in SrFCl_0.5Br_0.5:Sm²⁺ and BaFCl_0.5:Sm²⁺ were performed under the same conditions. The experimental results present that the hole-burning quantum efficiency of SrFCl_0.5Br_0.5:Sm²⁺ is higher than that of BaFCl_0.5Br_0.5:Sm²⁺.     

Fluorescence and persistent spectral hole burning of Eu in Ge-Ga-S-KBr glasses

Fluorescence and efficient persistent spectral hole burning of Eu³⁺ at 77 K were observed in chalcohalide glasses. The depth of the hole was approximately 30% after a burning process of 1 min with 50 mW power, and it was completely erased with Ar⁺ laser irradiation. The hole survived room temperature heat treatment and showed good thermal stability. The hole-burning mechanism was most probably the photo-reduction of Eu³⁺→Eu²⁺. Fluorescence from Eu³⁺ decreased with increasing temperature and disappeared at the temperature above ∼130 K.     

无机材料BaFCl0.5Br0.5：Sm^2＋光子选通光谱烧孔

本文报道了无机材料的BaFCl_(0.5)Br_(0.5):Sm~(2+)的光子选通光谱烧孔.文中叙述了光子选通光谱烧孔的机制.在低温4.2K下进行多孔烧孔和探测.测量了孔的选通性和稳定性.实现了孔的可擦除和重复烧孔.测量结果表明,处于4.2K的BaFCl_(0.5)Br_(0.5):Sm~(2+)样品,在一个非均匀加宽轮廓内可实现1×10~3个以上数目的永久性光谱烧孔.     

Electron impact single and double ionization of argon

Stable two-mode, and three-mode oscillations due to the spatial hole burning effect were observed experimentally with the increase of the pump power ratio in a laser-diode pumped sub-nanosecond microchip Cr,Yb:YAG self-Q-switched multimode laser. The stability of the output pulse trains was attributed to the mode coupling through antiphase dynamics between different modes. Modified multimode rate equations including the spatial hole-burning effect in the active medium and the non-linear absorption of the saturable absorber were proposed. Numerical simulations of the antiphase dynamics of such a laser were in good agreement with the experimental data, and the antiphase dynamics were explained by the evolution of the inversion population and the bleaching and recovery of the inversion population of the saturable absorber.     

SryBa1－yFCl0.5Br0.5:Sm2+在光谱

本文对无机光谱烧孔系列材料SryBa1－yFCl0.5Br0.5:Sm2+中不同组份的样品(y=0,0.25.0.5,0.75.1.00)4f5d能带的激发光谱、不同温度下5D2、5D1、5D0→7F0跃迁的荧光衰减进行了测量,研究了组份的变化对4f5d能带的位置,5D2、5D1、5D0→7F0跃迁的几率和烧孔效率的影响,并得出结论:在该系列材料中,随组份y的增加,4f5d带与5DJ能级更加接近,5D0→7F0的电子跃迁几率增大,烧孔效率提高。     

MyM'1-yFClxBr1-x:Sm2+材料制备光谱性质和光谱烧孔

本文介绍用高温固相扩散方法制备MyM''1-yFClxBr1-x:Sm2+(M''=Mg、Ca、Sr、Ba;x,y=1,0.8,…,0),并对这些系列材料发光性质进行了研究.结果表明:非均匀线宽主要受材料中阴离子随机分布影响;材料中x的变化及M,M''的不同或y的变化,对Sm2+的4f55d能级位置都有影响;对于BaFClxBr1-x:Sm2+和SryCa1-yFCl0.5Br0.5:Sm2+系列材料5D0-7F0发射峰值与x、y值关系给予了理论解释;选择出较好的光谱烧孔材料Mg0.5Sr0.5FCl0.5Br0.5:Sm2+,研究了其热猝灭规律,实现了这种材料在77K下的光谱烧孔,对其孔深、孔宽、烧孔能级、存储密度进行了测量计算,为进一步改善材料,研究烧孔机制提供了依据.     

Coherent hole burnings induced without saturation field in a Doppler broaden four-level N-type atomic system

We display the phenomenon of the hole burning which appearing without saturation field under the effect of different parameters. Theoretically the effect of spontaneously generating coherence (SGC) on the probe polarization spectrum in a Doppler broadened four-level N-type atomic system are investigated when the two driven and probe fields are arranged in copropagating and counterpropagating configurations which play an important role in appearing the coherent hole-burning (CHB) phenomenon. The condition of appearing the hole burning in the polarization spectrum at the presence of spontaneously generating coherence (SGC) and the nonradiative decay rates is that the wave number fields are different.     

Acoustic phonons in a quantum dot-matrix system: Hole-burning spectroscopy

A theory of burning spectral holes in an inhomogeneously broadened light absorption profile of quantum dots embedded in a dielectric matrix has been developed. The emphasis was on the possibility of using hole-burning spectroscopy to study the interaction of the electron subsystem of quantum dots with acoustic phonons. An analytical expression describing the shape of differential hole-burning spectra near the fundamental absorption edge for the cases of strong and weak confinement is obtained. The conditions under which the hole-burning spectra are most similar to the absorption spectra of a single quantum dot are determined.