硅烯/d_(x~2-y~2)+id_(xy)混合波超导隧道结隧道输运性质研究

运用Blonder-Tinkham-Klapwijk (BTK)理论研究了硅烯/d_(x~2-y~2)+id_(xy)混合波超导隧道结的隧穿性质.研究发现:垂直施加的电场、超导配对势的方向角和两种混合波配对能隙的比值Δ_1/Δ_0强烈地影响正常反射、Andreev反射和隧穿电导的值;当两种混合波的序参量比值较大时,隧道谱线在外加偏压E=Δ_1处出现谐振峰;系统的隧穿电导、正常反射幅和Andreev反射幅随超导方向角成周期性变化,变化周期为π/2;由于d_(xy)-波的存在,通过改变外加电场可以对隧穿电流加以调控.     

正常金属/dx2-y2+idxy混合波超导隧道结中的微分电导

运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论,计算了正常金属/dx2-y2 idxy混合波超导隧道结中的准粒子输运系数和微分电导.研究表明:(1)影响电导谱中零偏压电导峰滑移的因素有杂质散射、dxy波分量、混合波两分量的强度比、界面的势垒散射强度、超导晶轴方位等,其中d-xy波分量的存在和超导晶轴方位是关键因素;(2)在θ=π/4的情况下,零偏压电导峰出现的条件为Δ2=0或α=nπ/4;(3)粒子的入射角对电导峰的高低有显著影响.     

正常金属-铁磁绝缘层-dx2-y2+idxy混合波超导结中的磁散射对隧道谱的影响

在正常金属铁磁绝缘层dx2-y2 idxy混合波超导隧道结中,考虑到铁磁绝缘层的磁散射和界面的粗糙散射效应,运用BogoliubovdeGennes(BdG)方程和BlonderTinkhamKlapwijk(BTK)理论,计算了隧道结中的准粒子传输系数和微分电导.研究表明:(1)磁散射和界面粗糙散射均可以压低电导峰,其中磁散射能使电导峰滑移,而粗糙界面散射却能阻止这种滑移,且两散射的共同作用可抑制由混合波两序参数的幅值比不同所导致的电导峰滑移;(2)随铁磁层离超导表面距离的增加,隧道谱在零偏压处由凹陷变成了零偏压电导峰,继而又演化为凹陷中的中心峰;(3)当铁磁层离开超导表面有若干相干长度时,隧道谱中将呈现一些子能级谐振峰.     

正常金属d_(x~2-y~2)+id_(xy)混合波超导结中的隧道谱

在Blonder-Tinkham-Klapwijk散射理论框架下,通过求解Bogoliubov-deGennes方程,计算正常金属dx2-y2+idxy混合波超导结中的准粒子输运系数和隧道谱。研究表明:隧道谱中的电导峰位置强烈地依赖电子的入射角、超导的晶轴方位和dxy波分量的强度。     

d(x2-y2)+idxy混合波正常金属/绝缘层/超导体结中的隧道谱

考虑界面粗糙散射,在Blonder-Tinkham-Klapwijk(BTK)理论框架下,通过求解Bogoliubov-de-Gennes(BdG)方程,分别计算T=0K和有限温度下,d_(x²-y²)+id_xy混合波正常金属绝缘层超导体结中的准粒子输运系数和隧道谱.研究表明:隧道谱中的电导峰的劈裂程度强烈地依赖于d_xy波分量的强度、超导体的晶轴方位和界面粗糙强度,而温度的升高能压低电导峰. 关键词： NIS结 (x²-y²)+id_xy混合波超导体')" href="#">d_(x²-y²)+id_xy混合波超导体 隧道谱     

粗糙界面对铁磁半导体/d-波超导隧道结隧道谱的影响

考虑到铁磁半导体和d-波超导体中空穴的有效质量和费米速度错配,运用推广了的Blonder-Tinkham-Klapwijk(BTK)理论模型,研究了粗糙界面散射对铁磁半导体/d-波超导(FS/DS)隧道结的隧道谱的影响.研究表明:(1)铁磁半导体和d-波超导体中空穴的有效质量和费米速度错配对系统的微分电导影响显著;(2)粗糙界面散射对Andreev反射有抑制作用.     

铁磁半导体/d波超导结的自旋极化输运

考虑到铁磁半导体和d波超导体中空穴的有效质量和费米速度错配,运用推广了的B londer-Tinkham-K lapw ijk(BTK)理论模型,研究了铁磁半导体/d波超导隧道结的电导谱。研究表明:(1)铁磁半导体和d波超导体中空穴的有效质量和费米速度错配对系统的微分电导影响显著;(2)铁磁半导体的磁交换能对Andreev反射有抑制作用。     

第二类Weyl半金属的金属-超导-金属结中的Andreev反射

理论上研究了第二类Weyl半金属的金属-超导-金属(NSN)结在倾斜一定角度后体系的散射性质,计算结果显示倾斜角可以决定体系的散射机制,当倾斜角较小时, NSN结中存在两种局域Andreev反射和两种电子隧穿,包括径向Andreev反射、镜面Andreev反射、径向电子隧穿和镜面电子隧穿.随着倾斜角的增加,局域Andreev反射逐渐被抑制,当倾斜角超过临界角后, NSN结中的输运过程与正常金属的NSN结相同,会同时发生电子正常反射、电子隧穿、局域Andreev反射和交叉Andreev反射.此外,体系的总电导不受化学势的影响,并且在倾斜角小于临界角时不受入射角的影响,而在倾斜角大于临界角时随入射角的增加而减小,而交叉Andreev反射电导在某些条件下会随入射角的增加而增强.     

超导邻近效应在正常金属层中引起的反常小能隙现象

将散射矩阵方法推广到超导双结系统，对正常金属/正常金属/超导结的隧道电导进行了研究.中间正常金属层中的电子和其Andreev反射空穴之间的相位相干性导致了隧道电导出现反常小能隙现象.综合考虑相干和顺序遂穿，计算结果理想的解释了最近Gupta等人在实验中观测到的反常小能隙现象.     

正常金属/超导/正常金属双垒隧道结中的量子相干输运

考虑到量子相干效应和界面散射效应 ,利用 L ambert理论模型 ,计算正常金属 /绝缘层 /超导 /绝缘层 /正常金属双垒隧道结中的准粒子输运系数和隧道谱。研究表明 :( 1)所有的准粒子输运系数和电导谱在超导能隙之上都随能量作周期性振荡 ,其振荡周期依赖于超导层的厚度 ;( 2 )在超导能隙之上 Andreev反射系数随能量呈现周期性消失现象 ;( 3)在绝缘层势垒强度取很大的隧道极限下 ,超导层中会形成一系列的准粒子束缚态 ,其位置由量子化条件决定 ;( 4)界面散射效应不仅能压低各子能隙电导峰 ,还能使子能隙电导峰劈裂为两个峰。     

Tunneling Conductance in dx2-y2+idxy Mixed Wave Superconductor Graphene Junctions

Using the extended Blonder-Tinkham-Klapwijk formalism, we investigate the conductance spectra of normal metal/d_x²-y²+id_xy mixed wave superconductor graphene junctions. It is found that the conductance spectra vary strongly with the orientation of the gap and the amplitude ratio (Δ₁/Δ₀) of two components for d_x²-y²+id_xy mixed wave. The zero bias conductance isnearly 2 and the conductance peak vanishes in doped graphene forα=0 and Δ₁/Δ₀=1. The conductance increases with increasing the amplitude ratio of two components for α=π/4 and Δ₁/Δ₀=1. The ZBCP becomesobservable wide with 1F/Δ₀<100 for α=π/4 and Δ₁/Δ₀=1. This property is different from that in normal metal/d_x²-y² wave superconductor graphenejunctions.     

Tunneling Conductance in dx2-y2 ＋idly Mixed Wave Superconductor Graphene Junctions

Using the extended Blonder-Tinkham-Klapwijk formalism, we investigate the conductance spectra of normal metal/dx2-y2 ＋ idxy mixed wave superconductor graphene junctions. It is found that the conductance spectra vary strongly with the orientation of the gap and the amplitude ratio （Δ1/Δ0） of two components for dx2-y2 ＋ idxy mixed wave. The zero bias conductance is nearly 2 and the conductance peak vanishes in doped graphene for a = 0 and Δ1/Δ0 = 1. The conductance increases with increasing the amplitude ratio of two components for α =π/4 and Δ1/Δ0 -- 1. The ZBCP becomes observable wide with 1 〈 EF/Δ0 〈 100 for α= π/4 and Δ1/Δ0 = 1. This property is different from that in normal metal/dx2-y2 wave superconductor graphene junctions.     

The c—Axis Infrared Conductivity of a dx^2—y^2— Wave Superconductor with the Hopping Assisted by the Spin Fluctuations

A theory of the c-axis infrared conductivity of a dx^2-y^2- wave superconductor due to the competition between the interlayer direct hopping and the hopping assisted by the spin fluctuations has been developed.The prediction of our theory captures the main feature of the experiment.Thus we argue that the anomalous behavior of the c-axis infrared conductivity of the underdoped cuprates in superconducting state may be properly understood within the theory.     

过渡族元素掺杂BaTiO3-Tb1-xDyxFe2-y层状复合材料中的磁电效应

用溶胶-凝胶法制备1.0%mol Mn,Cr,Co掺杂BaTiO3(BTO)粉体,在1350℃下烧结成多晶陶瓷样品.X射线衍射和差示扫描量热分析表明,室温下掺杂BaTiO3具有四方钙钛矿结构;居里点和相变潜热随Cr,Mn,Co掺杂逐渐降低.将掺杂BaTiO3与Tb1-xDyxFe2-y(TDF)胶合制成双层磁电复合材料,并研究了Cr:BTO-TDF,Mn:BTO-TDF,Co:BTO-TDF层状复合材料中的磁电效应.实验表明,在340×80 A·m-1偏置磁场下,Cr:BTO-TDF的横向磁电电压系数达到最大值586 mV·cm-1·(80 A·m-1-1.在400×80 A·m-1偏置磁场下,Mn:BTO-TDF和Co:BTO-TDF的横向磁电电压系数的最大值分别为480 mV·cm-1·(80 A·m-1-1和445 mV·cm-1·(80 A·m-1-1.研究表明掺杂BaTiO3-TDF层状复合材料中具有较强的磁电耦合.作为无铅压电材料,掺杂BaTiO3制备的磁电效应器件颇具应用前景.     

The concept of effective tension for fluctuating vesicles

Vesicles are closed surfaces of bilayer membranes. Their mean shapes and fluctuations are governed by the competition of curvature energy and geometrical constraints on the enclosed volume and total surface area. A scheme to calculate these fluctuations to lowest order in the ratio of temperature to bending rigidity is developed. It is shown that for fluctuations that break a symmetry of the mean shape the area constraint indeed acts like a tension whose value is given by the Lagrange multiplier used to enforce the area constraint in the first place. As a consequence, these fluctuations are also insensitive to the specific variants of the curvature model. For fluctuations that preserve the symmetry of the mean shape the role of the area constraint is more subtle. The low temperature expansion breaks down in the spherical limit where with the excess area another small parameter enters. By incorporating the area constraint in this limit exactly, the validity of the conventional approach using an effective tension for fluctuations of quasi-spherical vesicles can be assessed.Dedicated to Prof. Herbert Wagner on the occasion of his 60th birthday     

单磁场驱动的Tb1-xDyxFe2-y/Pb(Zr,Ti)O3三层膜磁电效应

研究了Tb1-xDyxFe2-y(TDF)与锆钛酸铅(PZT)三层膜样品的制备和在单一直流磁场驱动下的磁电(ME)效应.在该系列三层膜样品中测量到了巨大的ME耦合效应.所得实验结果与同种样品在两磁场驱动下的ME效应完全不同.这可能预示了某些新的物理内容.该技术可简化ME效应在某些实际应用中的复杂度.     

Size limiting in Tsallis statistics

Power law scaling is observed in many physical, biological and socio-economical complex systems and is now considered an important property of these systems. In general, power law exists in the central part of the distribution. It has deviations from power law for very small and very large variable sizes. Tsallis, through non-extensive thermodynamics, explained power law distribution in many cases including deviation from the power law. In case of very large steps, they used the heuristic crossover approach. In the present work, we present an alternative model in which we consider that the entropy factor q decreases with variable size due to the softening of long range interactions or memory. We apply this model for distribution of citation index of scientists and examination scores and are able to explain the distribution for entire variable range. In the present model, we can have very sharp cut-off without interfering with power law in its central part as observed in many cases.     

Theoretical studies on [2 + 2 + 2] reaction mechanisms of three ethynes. More accurate estimation of activation energy

The mechanisms of the [2 + 2 + 2] cycloaddition reaction of three ethyne molecules were studied by ab initio molecular orbital and density functional methods. The transition states range from that of the concerted mechanism with D_3h symmetry to that of the stepwise mechanism with C₂ symmetry. The transition state structure and the activation energy depend on the basis set and computational method employed in the analysis. The activation energy barrier was determined to be in the range of 36–44 kcal/mol. The activation energy determined by various methods corresponds to the interaction energy, which is related to the electron correlation energy. The best estimation of the activation energy barrier is 41.6 kcal/mol, achieved from the relation between the interaction energy and the activation energy. Copyright © 2013 John Wiley & Sons, Ltd.