具有高光开关比和高响应度的单根In2O3纳米线紫外光电晶体管

In_2O_3纳米线由于其独特性质而成为紫外光电探测器的潜力候选者,目前,In_2O_3纳米线基紫外光电探测器已被广泛研究,但较大的暗电流限制了其进一步应用。本文制备了In_2O_3纳米线紫外光电晶体管,通过背栅电压的调制作用,器件中的暗电流几乎被全部耗尽,同时,由于光照下的阈值偏移,栅压对光电流的影响较小。最终得到具有高光开关比(1.07×10~8)和高响应度(5.58×10~7 A/W)的单根In_2O_3纳米线紫外光电晶体管,性能明显优于之前报道的In_2O_3纳米结构光电探测器。本工作促进了In_2O_3纳米线在下一代纳米光电子器件和集成电路中的应用。     

Mn_3O_4包覆对LiNi_(0.5)Mn_(1.5)O_4正极材料界面电化学性能的提高（英文）

本文采用化学湿磨法,首次将金属氧化物Mn_3O_4包覆于LiNi_(0.5)Mn_(1.5)O_4颗粒表面,使得电极材料的电子电导率从1.53×10~(-7) S/cm提高到3.15×10~(-5) S/cm.电化学测试结果表明Mn_3O_4包覆大大提高LiNi_(0.5)Mn_(1.5)O_4正极材料的倍率性能和高温循环稳定性.最佳包覆样品为2.6wt% Mn_3O_4包覆的LiNi_(0.5)Mn_(1.5)O_4,在10 C倍率下具有108 mAh/g的高放电容并且在55℃下100次循环后仍有78%的容量保持率,远大于未包覆样品67%的容量保持率.     

抗坏血酸后处理化学气相法制备的聚3,4-乙撑二氧噻吩薄膜及其热电性能

为了获得高热电性能薄膜材料,采用抗坏血酸(VC)作为还原剂对PEDOT-Tos-PPP薄膜进行后处理,研究了不同浓度的VC水溶液对薄膜热电性能的影响,并研究了后处理薄膜在空气中的稳定性.结果表明,经浓度为20%的VC水溶液处理后,薄膜功率因子呈现最大值55.6μW·m~(-1)·K~(-2),是处理之前(32.6μW·m~(-1)·K~(-2))的1.7倍,室温下最大的ZT值为0.032.经过VC处理后PEDOT薄膜的电导率和Seebeck系数在空气中表现出不稳定的特性,主要是由于空气中的氧气导致薄膜表面中性态PEDOT进一步发生氧化引起的.     

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.     

无锂助熔剂B_2O_3对Li_(1.3)Al_(0.3)Ti_(1.7)(PO_4)_3固体电解质离子电导率的影响

采用固相法制备锂离子电池用固体电解质磷酸钛锂铝Li_(1.3)Al_(0.3)Ti_(1.7)(PO_4)_3(LATP),研究了不同烧结温度以及助熔剂对LATP固体电解质离子电导率的影响.采用X射线衍射、能谱分析、扫描电镜和交流阻抗等方法,研究样品的结构特征、元素含量、形貌特征以及离子导电性能.结果表明,在900?C烧结可以获得结构致密、离子电导率较高的纯相LATP陶瓷固体电解质.与添加助熔剂Li BO2的样品进行对比实验发现,采用B_2O_3代替LiBO_2作为助熔剂也可以提高烧结样品的离子电导率,并且电解质的离子电导率随助熔剂添加量的增大,先增大后减小,其中添加质量百分比为2%的B_2O_3的样品具有最高的室温离子电导率,为1.61×10~(-3)S/cm.     

溅射而成的In_(2-x)Sn_xO_(3-y)高导电性透明薄膜

用直流二极管溅射淀积法获得TIn_(2-x)Sn_xO_(3-y)的高导电性透明膜。溅射气体用Ar,O_2,N_2,Xe和O_2-Ar混合气。利用In_2O_3/SnO_2不同比率的靶溅射,得到的最好结果是以纯Ar或纯Xe作溅射气体和用含9—13克分子百分比(m/o)SnO_2的靶。达到的最低膜电阻率为1.77×10~(-4)欧姆——厘米(ohm-cm),而一般膜的电阻率是3×10~(-4)ohm-cm左右。发现用溅射气体流量很低时(10~(-2)—10~(-1)乇升/秒)对生长缺氧的薄膜是必须的。不同密度(多孔性)的靶对还原的敏感性不同。因而,溅射条件决定于靶的密度。这种膜具有良好的附着性,耐清洗、加热、磨光和粘接,不易损坏。它们可以用标准的光刻技术在加热酸中腐蚀以刻出电极的几何形状。将膜暴露在500℃空气中以后,会使它在室温时的电阻增加三倍。溅射膜的面电阻为1.6ohm/平方。在500毫微米(nm)波长时,光透射率为73％,反射率为14％。加适当的抗反射层,做成具有超过97％光透射率、5—7ohm/平方的膜似乎是可行的。     

固态电解质锂镧锆氧(Li_7La_3Zr_2O_(12))制备及第一性原理研究

固态电解质(SSE)是锂离子电池(LIB)的关键材料.Li_7La_3Zr_2O_(12)(LLZO)固体电解质是全固态锂离子电池开发中的关键部分.采用高温固相法制备了不同烧结温度后的四方Li_7La_3Zr_2O_(12)(t-LLZO)和立方Li_7La_3Zr_2O_(12)(c-LLZO),分析了两种样品的结构性能.800℃下烧结12小时的t-LLZO呈四方相,晶格尺寸为a=b=13.13064?,c=12.66024?,离子电导率为3.42×10~(-8)S·cm~(-1);1000℃下烧结12小时的c-LLZO呈立方相,晶格尺寸为a=b=c=13.03544?,离子电导率为8.48×10~(-5)S·cm~(-1).另基于密度泛函理论(DFT)的第一性原理计算了四方相和立方相的LLZO固体电解质材料的能带结构、晶格参数、态密度和键布居.通过理论计算解释了四方相LLZO离子电导率低于立方相LLZO的原因.     

Determination of activation energy of ion-implanted deuterium release from W–Y_2O_3

The retention and release of deuterium in W–2%Y_2O_3 composite materials and commercially pure tungsten after they have been implanted by deuterium plasma(flux ～ 3.71 × 10~(21) D/m~2·s, energy ～ 25 eV, and fluence up to 1.3 × 10~(26)D/m~2)are studied. The results show that the total amount of deuterium released from W–2%Y_2O_3 is 5.23 × 10~(20) D/m~2(2.5 K/min),about 2.5 times higher than that from the pure tungsten. Thermal desorption spectra(TDS) at different heating rates(2.5 K/min–20 K/min) reveal that both W and W–2%Y_2O_3 have two main deuterium trapped sites. For the low temperature trap, the deuterium desorption activation energy is 0.85 eV(grain boundary) in W, while for high temperature trap, the desorption activation energy is 1.57 eV(vacancy) in W and 1.73 eV(vacancy) in W–2%Y_2O_3.     

具有本征低晶格热导率的硫化银快离子导体的热电性能

硫化银(Ag_2S)是一种典型的快离子导体材料,前期关于Ag_2S的研究主要集中在光电和生物等领域.最近的研究表明, a-Ag_2S具有和金属一样的良好延展性和变形能力.但是, Ag_2S的热电性能尚无公开报道.本工作合成了单相Ag_2S化合物,系统研究了其在300—600 K范围的物相变化、离子迁移特性和电热输运性质.研究发现, Ag_2S在300—600 K温度区间表现出半导体的电输运性质.由于单斜-体心立方相晶体结构转变, Ag_2S的离子电导率、载流子浓度、迁移率、电导率、泽贝克系数等性质在455 K前后出现急剧变化.在550 K, Ag_2S的功率因子最高可达5μW·cm~(–1)·K~(–2). Ag_2S在300—600 K温度区间均表现出本征的低晶格热导率(低于0.6 W·m~(–1)·K~(–1)). S亚晶格中随机分布的类液态Ag离子是导致b-Ag_2S体心立方相具有低晶格热导率的主要原因.在573 K, Ag_2S的热电优值可达0.55,与Ag_2Se, Ag_2Te, CuAgSe等已报道的Ag基快离子导体热电材料的性能相当.     

掺杂PEDOT ∶PSS对聚合物太阳能电池性能影响的研究

研究了掺杂后poly(3,4-ethylene dioxythiophene):poly(styrenesulphonic acid)(PEDOT ∶PSS)电导率的变化以及掺杂PEDOT ∶PSS薄膜对聚合物太阳能电池器件性能的影响. 实验发现,向PEDOT ∶PSS中掺入极性溶剂二甲基亚砜(DMSO)明显提高了薄膜的电导率,掺杂后的电导率最大值达到1.25 S/cm,比未掺杂时提高了3个数量级. 将掺杂的PEDOT ∶PSS薄膜作为缓冲层应用于聚合物电池 (ITO/PEDOT ∶PSS/P3HT ∶PCBM/LiF/Al) 中,发现高电导率的PEDOT ∶PSS降低了器件的串联电阻,增加了器件的短路电流,从而提高了器件的性能. 最好的聚合物太阳能电池在100 mW/cm²的光照下,开路电压(V_oc)为0.63 V,短路电流密度(J_sc)为11.09 mA·cm^-2,填充因子(FF)为63.7%,能量转换效率(η)达到4.45%. 关键词： PEDOT ∶PSS 电导率 聚合物太阳能电池 能量转换效率     

Electrical properties of ZrO2-In2O3-Y2O3 and its application to a membrane for gas separation

Electrical properties of In₂O₃-doped yttria-stabilized zirconia (In-YSZ) were investigated. The solubility limit of In₂O₃ in YSZ (10 mol% Y₂O₃) is 17.5 mol%. The total conductivity depended on the concentration of In₂O₃. The activation energy of In-YSZ was higher than that of YSZ. From the oxygen partial pressure (P_o2) dependence of the total conductivity of In-YSZ, the electronic conductivity increased with increasing In₂O₃ concentration at low oxygen partial pressures and at high temperature. From the results, we discussed the applicability of In-YSZ to a membrane for hydrogen production from direct water splitting at high temperature.     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

Yb-In_2O_3纳米管的制备及其对甲醛的优异气敏性能

采用单管静电纺丝的方法成功制备了纯的与Yb掺杂的In_2O_3纳米管(Yb-In_2O_3).利用扫描电子显微镜和X射线衍射对样品的结构和形貌进行了表征,制作了基于纯In_2O_3和Yb-In_2O_3纳米管的气敏元件.研究表明,Yb-In_2O_3纳米管气敏元件在230℃下对100 ppm甲醛的灵敏度为69.8,是纯In_2O_3纳米管气敏元件对同浓度甲醛灵敏度(18.4)的3.8倍,其对100 ppm甲醛的响应恢复时间分别为4 s和84 s.并且,基于Yb-In_2O_3纳米管的气敏元件对100 ppb甲醛的灵敏度达到2.5.此外,该气敏元件还具有出色的选择性及稳定性,具备良好的实际应用前景.     

In2O3/CuO纳米异质结的制备和光催化性质研究

通过溶胶-凝胶结合静电纺丝过程制备了In₂O₃/CuO纳米异质结。XRD和Raman光谱的研究表明,随着前驱物中Cu/In比例的增加,CuO相的含量逐渐增加。吸收光谱研究表明,随着CuO含量的增加,复合纳米结构的可见光吸收明显增强。光催化实验研究结果表明,In₂O₃/CuO纳米异质结具有比单一相的In₂O₃和CuO更强的光催化性能,其主要来源于异质结所导致的增强的光生电子和空穴的分离效率。     

溶剂热制备锂电池负极材料CNT-ZnFe2O4及其电化学性能

为了改善锂离子电池负极材料ZnFe₂O₄导电性差和循环寿命低的缺点,利用溶剂热反应方法制备了ZnFe₂O₄,并通过复合碳纳米管对ZnFe₂O₄进行改性。充放电测试结果表明：经过50次充放电后,碳纳米管复合改性后的ZnFe₂O₄容量保持在860 mA·h·g^-1,具有较好的循环稳定性。碳纳米管具有良好的导电性与导热性,改善了ZnFe₂O₄导电性差的缺点。     

Electrical and magnetic properties of polyaniline/Fe3O4 nanostructures

We report on electrical and magnetic properties of polyaniline (PANI) nanotubes (150 nm in diameter) and PANI/Fe₃O₄ nanowires (140 nm in diameter) containing Fe₃O₄ nanoparticles with a typical size of 12 nm. These systems were prepared by a template-free method. The conductivity of the nanostructures is 10⁻¹–10⁻² S/cm; and the temperature dependent resistivity follows a ln ρT^−1/2 law. The composites (6 and 20 wt% of Fe₃O₄) show a large negative magnetoresistance compared with that of pure PANI nanotubes and a considerably lower saturated magnetization (M_s=3.45 emu/g at 300 K and 4.21 emu/g at 4 K) compared with the values measured from bulk magnetite (M_s=84 emu/g) and pure Fe₃O₄ nanoparticles (M_s=65 emu/g). AC magnetic susceptibility was also measured. It is found that the peak position of the AC susceptibility of the nanocomposites shifts to a higher temperature (>245 K) compared with that of pure Fe₃O₄ nanoparticles (190–200 K). These results suggest that interactions between the polymer matrix and nanoparticles take place in these nanocomposites.     

In2O3晶体电子结构和光吸收机理研究

为了得到准确的In₂O₃晶体电子结构, 本文分别采用GGA, GGA+U, HSE06的方法计算了电子结构, 并进行了G₀W₀修正, 通过比较计算结果, 得到HSE06+G₀W₀方法计算得到的禁带宽带最接近实验结果. 在此基础上使用Hedin的G₀W₀近似方法和Bethe-Salpeter方程计算得到了In₂O₃晶体的光学性质, 计算结果与实验结果吻合很好, 在此基础上通过对准粒子能带结构、光学跃迁矩阵和光学吸收谱的分析, 给出了In₂O₃晶体的光学跃迁机理.     

CaO-Al2O3-SiO2熔渣结构和热导率的分子动力学模拟

利用分子动力学模拟研究CaO-Al₂O₃-SiO₂三元熔渣的微观结构和热导率。针对六组不同Al₂O₃含量的熔渣,基于BMH势函数分析了径向分布函数、键长、键角分布函数、氧类型和微结构单元Qⁿ等微观结构信息。结果表明硅和铝在熔渣中以四面体网络结构存在,硅氧四面体较铝氧四面体更为稳定。随着铝含量增加,熔体中的键长和四面体中心角无明显变化,Al-O-Al和Si-O-Al键角逐渐减小;网络中的桥氧(BO)和三配位氧(TO)含量增加,Q³和Q⁴含量增多,在高铝区出现较多的五配位铝(Al^V)。采用Muller-Plathe方法计算了熔渣的热导率,随着铝替代硅原子,网络的聚合程度增加,强化了熔体的热输运能力,热导率呈现增大趋势。     

The role of Bi2O3 as a network modifier and a network former in xBi2O3 · (1 − x)LiBO2 glass system

The effect of Bi₂O₃ on the glass transition temperature, electrical conductivity and structure of LiBO₂ glass has been investigated. T_g vs. composition curve shows three different linear regions, while there is an overall decrease in T_g with the increase in Bi₂O₃ content. The slope of these three straight lines is in a decreasing order. These results are interpreted in terms of the increase in the number of non-bridging oxygen atoms, substitution of Bi-O bond in place of B-O bond and change in Li⁺ ion concentration. The conductivity vs. composition curve exhibits two maxima which are interpreted in terms of the structural modification effect of Bi₂O₃ on LiBO₂ network and mixed-former effect, respectively. Results obtained from the XPS studies of the samples of composition x 0.005, have shown that the number of non-bridging oxygen atoms from B-O bond increases with the increase in Bi₂O₃ content. It has a maximum value at x = 0.003 where the conductivity has also exhibited a maximum value. Further increase of Bi₂O₃ content causes decrease in it. For higher Bi₂O₃ content (x * > 0.005), O 1s spectra of Bi₂O₃ has been separated out from that of Bi₂O₃. Bismuth ions have been substituted for boron ions as network former ions.