共查询到20条相似文献,搜索用时 531 毫秒
1.
2.
本文给出了由文献(1)导出的等温状态方程具有压强平移不变的普遍性质,由此,讨论了一种理想固体的模型,给出了一个绝对的压强坐标。并讨论了二种真实固体材料的状态方程的数学拟合的形式。 相似文献
3.
4.
5.
利用分子动力学方法,研究了高温高压下钙钛矿结构MgSiO_3的状态方程。研究表明,分子动力学模拟结果精确地再现了广泛温度和压强范围内MgSiO_3的摩尔体积。在300 K压强上升到140 GPa模拟的MgSiO_3状态方程和有效的实验值、他人的拟合值以及基于局域密度近似的第一原理计算结果基本一致。并且更高温度和更高压强下模拟的MgSiO_3状态方程和他人的计算值吻合的很好。另外,还分别计算了300、900、2000和3000 K压强上升到120 GPa时MgSiO_3的体积压缩率。 相似文献
6.
高压下钙钛矿结构MgSiO3的分子动力学研究 总被引:1,自引:0,他引:1
利用分子动力学方法,研究了高温高压下钙钛矿结构MgSiO3的状态方程.研究表明,分子动力学模拟结果很好地再现了广泛温度和压强范围内钙钛矿结构MgSiO3的摩尔体积.温度300 K压强上升到120 GPa模拟的钙钛矿结构MgSiO3状态方程和有效的实验结果基本一致.在更高温度和更高压强下模拟的钙钛矿结构MgSiO3状态方程和他人的计算值吻合的很好.另外,还分别计算了温度300 K,900 K,1500 K和2500 K压强上升到120 GPa时MgSiO3的体积压缩率. 相似文献
7.
采用氩气作传压介质测得的状态方程数据,在高压区,与酒精溶液作传压介质的情况极为不同。因此,对于高弹性模量材料,使用酒精溶液,不能有效地工作到超过20 GPa的范围。本文也比较了氩气压强规的使用情况。 相似文献
8.
9.
在改进的Hartree-Fock-Slater原子模型的基础上,在中心场近似下用含能带效应的全动态电子判据处理自由电子与束缚电子的密度分布,提高了电子波函数、电子占据数等原子参数的计算精度.通过平均近似处理,给出了劈裂的能带,从而改善了物质电子状态方程的计算精度.结果部分详细计算了W元素的原子能量、电子压强、熵、定容热容及其它热力学参数 相似文献
10.
由等温体积弹性模量的定义及其与压强关系的假设出发,导出了一个新的适用于高压下碱卤晶体的三参量等温状态方程。计算了室温下NaCl晶体在0~30 GPa压强范围内、CsCl晶体在0~40 GPa压强范围内的相对体积以及NaCl晶体在0~30 GPa压强范围内的等温体积弹性模量,计算结果与实验值一致。对等温体积弹性模量及其对压强的一阶、二阶导数与压强的关系进行了讨论,指出压强趋于无穷大时的等温体积弹性模量是常数。 相似文献
11.
B. B. Kadomtsev 《Radiophysics and Quantum Electronics》1986,29(9):781-787
Conclusions The observed tendency for certain optimal current-density and pressure profiles to be maintained can be interpreted if one assumes a relaxed state in the plasma, which corresponds to minimal total energy for a given current. With optimal power deposition, when the current-density and pressure profiles also remain optimal, ohmic scaling may be maintained up to fairly high densities, i.e., fairly high p. If the power deposition profile deviates from optimal, the plasma resists deviation from the optimal profiles, and the more so the higher p. The thermal-conductivity profile is modified to maintain the relaxed state. Nonoptimal profiles may lead to degradation in the global energy lifetime E, which can be related phenomenologically to pumping of magnetic noise by the excess free energy F. Our argument provides a qualitative explanation of the self-organization physics.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 29, No. 9, pp. 1032–1040, September, 1986. 相似文献
12.
Y.R. Sui B. Yao J.H. Yang X.M. Huang L.L. Gao D.Z. Shen 《Applied Surface Science》2010,256(9):2726-2878
B-N codoped p-type ZnO thin films have been realized by radio frequency (rf) magnetron sputtering using a mixture of argon and oxygen as sputtering gas. Types of conduction and electrical properties in codoped ZnO films were found to be dependent on oxygen partial pressure ratios in the sputtering gas mixture. When oxygen partial pressure ratio was 70%, the codoped ZnO film showed p-type conduction and had the best electrical properties. Additionally, the p-ZnO/n-Si heterojunction showed a clear p-n diode characteristic. XRD results indicate that the B-N codoped ZnO film prepared in 70% oxygen partial pressure ratio has high crystal quality with (0 0 2) preferential orientation. Meanwhile, the B-N codoped ZnO film has high optical quality and displays the stronger near band edge (NBE) emission in the temperature-dependent photoluminescence spectrum, the acceptor energy level was estimated to be located at 125 meV above the valence band. 相似文献
13.
在高压低温(77 K)条件下,利用红宝石荧光测压方法,系统地研究了金刚石对顶砧装置中固态氩和4∶1甲醇-乙醇混合物的传压特性。通过测量不同位置上红宝石荧光R1线的频移,确定了样品室内的压力分布。实验结果表明:在0~16 GPa的压力范围内,固态氩介质中反映介质非均匀性程度的|Δp/p|<3%、σp/p<2%,均在室温静水压条件下所允许的范围之内。红宝石荧光R线除随压力变宽外,与常压的很相似,表明固态氩在高压低温条件下是良好的传压介质。与之相比,4∶1甲醇-乙醇介质在77 K低温下的传压特性明显差于固态氩,已不适合作传压介质。 相似文献
14.
T. M. Sanders Jr 《Contemporary Physics》2013,54(3):151-157
The roton elementary excitations in superfluid liquid 4He have an unusual dispersion curve. The energy is an approximately quadratic function of (p - p0), the difference between the magnitude of the momentum p and a characteristic value p0. As a result, while for p > p0 a roton has its (group) velocity parallel to its momentum, when p < p0 the velocity and momentum are antiparallel. When p = p0, the roton has non-zero momentum but zero velocity. These kinematic properties lead to unusual trajectories when rotons scatter or experience external forces. This paper examines this behaviour in the classical (ray optics) limit, where the roton wavelength is small compared with all other dimensions. Several experiments illustrate these effects. The examples are interesting in themselves, and also offer unconventional pedagogical possibilities. 相似文献
15.
16.
K. H. Althoff K. Kramp H. Matthäy H. Piel 《Zeitschrift für Physik A Hadrons and Nuclei》1966,194(2):135-143
The polarization of the recoil proton from the reactionγ+p→π 0+p has been measured using liquid helium as polarization analyser. The photon energy has been varied between 250 and 360 MeV, the pion angle (CM) between 58° and 100°. 相似文献
17.
We report on the dynamical expansion of pulsed laser ablation of aluminum in ambient pressure of nitrogen using images of the expanding plasma. The plasma follows shock model at pressures of 0.1 Torr and drag model at 70 Torr, respectively, with incident laser energy of 265 mJ. The plasma expansion shows unstable boundaries at 70 Torr and is attributed to Rayleigh-Taylor instability. The growth time of Rayleigh-Taylor instability is estimated between 0.09 and 4 μs when the pressure is varied from 1 to 70 Torr. The pressure gradients at the plasma-gas interface gives rise to self-generated magnetic field and is estimated to be 26 kG at 1 Torr ambient pressure using the image of the expanding plasma near the focal spot. The varying degree of polarization of Al III transition 4s 2S1/2-4p 2P°3/2 at 569.6 nm gives rise to anisotropic emission and is attributed to the self-generated magnetic field that results in the splitting of the energy levels and subsequent recombination of plasma leading to the population imbalance. 相似文献
18.
Ultra-low-energy ion implantation of silicon with a hydrogen-terminated (0 0 1) surface was carried out using a mass-separated 31P+ ion beam. The ion energy was 30 eV, the displacement energy of silicon, and the ion doses were 6 × 1013 ions/cm2. Annealing after the implantation was not carried out. The effects of ion implantation on the surface electrical state of silicon were investigated using X-ray photoelectron spectroscopy (XPS). The Si 2p peak position using XPS depends on the doping conditions because the Fermi level of the hydrogen-terminated silicon surface is unpinned. The Si 2p peak position of the specimen after ion implantation at a vacuum pressure of 3 × 10−7 Pa was shifted to the higher energy region. It suggested the possibility of phosphorus doping in silicon without annealing. In the case of ion implantation at 5 × 10−5 Pa, the Si 2p peak position was not shifted, and the peak was broadened because of the damage by the fast neutrals. Ultra-low-energy ion doping can be achieved at ultra-high-vacuum conditions. 相似文献
19.
The stagnation pressure p(s) of imploding cylindrical ( n = 2) and spherical ( n = 3) shells is found to scale as p(s)/p(0)~M(2(n+1)/(gamma+1))(0), where M0 is the Mach number of the imploding shell and p(0) its maximum pressure. The result holds approximately for Mach numbers in the range 2相似文献