Inversion of conductivity type in Bi2Te3−xSx crystals

Transport parameters and optical properties of Bi₂Te_3?xS_x single-crystals with x=0–0.18 were studied. With increasing sulphur content the concentration of free current carriers decreases up to x=0.12, due to the interaction of S^x_Te defects with antisite defects Bi^′_Te, and then the p-type conductivity changes to the n-type. The optical gap of Bi₂Te_3?xS_x crystals increases with increasing S content. The obtained results led to the preparation of Bi₂Te₃-Bi₂Te_3?xS_xp–n junction by the heat treatment of p-type Bi₂Te₃ in S vapours.     

XPS study of the supported phase — SiO2 interaction in Mo/SiO2 and CoMo/SiO2 hydrodesulphurization catalysts in their oxidic precursor form

XPS results on two series of catalysts, namely Mo/SiO₂ and CoMo/SiO₂ in the oxidic form, are reported. In the first series the molybdenum oxide content deposited on SiO₂ ranges from 2.8 to 20.6 weight %. The second series was obtained by cobalt impregnation of the first series; in this case the atomic ratio Co/(Co + Mo) was fixed at 0.36.XPS binding energy and intensities measurements enable estimation of the interaction and dispersion between the oxide phase and the support to be made.In the case of molybdenum deposited alone on the support, the binding energies of the Mo and O levels both increase with MoO₃ content. When cobalt is also present on the support, the binding energies of the Mo and O levels remain constant. The relative intensities I_Mo/I_Si and I_Co/I_Si remain constant up to 12% active phase and then drastically increase for higher amounts of oxide.These results confirm the existence of a relatively strong Mo/SiO₂ interaction. This interaction is substantially weaker when Co is supported on the MoSiO₂ solid, leading to the formation of CoMoO₄ at the expense of the Mo/SiO₂ interaction. Furthermore, it is shown that at high content of oxide the active phase is deposited on the outer surface of the particle and not inside the pores.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.     

焙烧温度对SiO2负载的Co3O4纳米粒子表面氧缺陷浓度和CO氧化催化性能的影响

以传统的浸渍法,在不同焙烧温度下制备了用于CO氧化反应的Co₃O₄/SiO₂催化剂．通过激光拉曼光谱(Raman)、X射线光电子能谱(XPS)、X射线衍射(XRD)、程序升温还原(TPR)和X射线吸收精细结构谱(XAFS)表征了该系列催化剂的结构．在所有的催化剂中,XRD和Raman光谱都只检测到了Co₃O₄晶相的存在．与Co₃O₄体相相比,XPS结果表明在200 oC焙烧的(Co₃O₄(200)/SiO₂)催化剂中Co₃O₄表面上存在着过量的Co²⁺．与XPS的结果一致,TPR结果表明Co₃O₄(200)/SiO₂催化剂中Co₃O₄表面上存在氧缺陷, 并且XAFS结果也表明Co₃O₄(200)/SiO₂催化剂中Co₃O₄具有更多的Co²⁺．提高焙烧温度使得过量的Co²⁺进一步氧化为Co³⁺,同时降低了表面氧缺陷浓度,从而得到计量比的Co₃O₄4/SiO₂催化剂．在所有的负载催化剂中Co₃O₄(200)/SiO₂催化剂表现出了最好的CO氧化催化性能,表明过量Co²⁺和表面氧缺陷的存在能够促进Co₃O₄催化CO氧化反应的活性.     

Composite SiO2/TiO2 and amine polymer/TiO2 nanoparticles produced using plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition was used to conformally coat commercial TiO₂ nanoparticles to create nanocomposite materials. Hexamethyldisiloxane (HMDSO)/O₂ plasmas were used to deposit SiO₂ or SiO_xC_yH_z films, depending on the oxidant concentration; and hexylamine (HexAm) plasmas were used to deposit amorphous amine-containing polymeric films on the TiO₂ nanoparticles. The composite materials were analyzed using Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). These analyses reveal film composition on the nanoparticles was virtually identical to that deposited on flat substrates and that the films deposit a conformal coating on the nanoparticles. The performance of the nanocomposite materials was evaluated using UV-vis spectroscopy to determine the dispersion characteristics of both SiO_x and HexAm coated TiO₂ materials. Notably, the coated materials stay suspended longer in distilled water than the uncoated materials for all deposited films.     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

Anomalous behavior of ultrasonic properties near 50 K in Rb0.30MoO3 and Rb0.30(Mo1−xVx)O3

Depending on the temperature, the charge density wave (CDW) nonlinear conductivity of the blue bronzes A_0.30MoO₃ (A=K, Rb) shows two different regimes: a strongly damped motion above ∼50 K and motion with almost no damping below ∼50 K. In a search for an elastic signature of this CDW behaviour, we performed ultrasonic measurements on Rb_0.30MoO₃ and Rb_0.30(Mo_1−xV_x)O₃ single crystals between 4 K and 300 K. In Rb_0.30MoO₃, at T∼50 K, upon cooling, a large increase of the sound velocity is observed. The ultrasonic attenuation coefficient shows an increase down to 50 K followed by a plateau. In Rb_0.30(Mo_1−xV_x)O₃ (x=0.4 at%) the anomaly broadens and is shifted towards higher temperatures. The results are discussed in terms of CDW glass.     

Epitaxial MoOx nanostructures on TiO2(1 1 0) obtained using thermal decomposition of Mo(CO)6

Stoichiometric and highly-defective TiO₂(1 1 0) surfaces (called as yellow and blue, respectively) were exposed to Mo(CO)₆ vapours in UHV and in a reactive O₂ atmosphere. In the case of yellow-TiO₂, an O₂ reactive atmosphere was necessary to obtain the Mo(CO)₆ decomposition at 450 °C with deposition of MoO_x nanostructures where, according to core level photoemission data, the Mo⁺⁴ state is predominant. In the case of blue-TiO₂ it was possible to obtain Mo deposition both in UHV and in an O₂ atmosphere. A high dose of Mo(CO)₆ in UHV on blue-TiO₂ allowed the deposition of a thick metallic Mo layer. An air treatment of this sample at 580 °C led to the elimination of Mo as MoO₃ and to the formation of a transformed layer of stoichiometry of Ti_(1−x)Mo_xO₂ (where x is close to 0.1) which, according to photoelectron diffraction data, can be described as a substitutional near-surface alloy, where Mo⁺⁴ ions are embedded into the titania lattice. This embedding procedure results in a stabilization of the Mo⁺⁴ ions, which are capable to survive to air exposure for a rather long period of time. After exposure of the blue-TiO₂(1 1 0) substrate to Mo(CO)₆ vapours at 450 °C in an O₂ atmosphere it was possible to obtain a MoO₂ epitaxial ultrathin layer, whose photoelectron diffraction data demonstrate that is pseudomorphic to the substrate.     

Raman scattering from GaSe1−xTex

The long-wavelength optical phonons of the layer GaSe_1?xTe_x have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1,06 μm line of the continuously operated YAG:Nd³⁺ laser. Detailed study of the Raman spectra of GaSe_1?xTe_x solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal ?-GaSe to monoclinic GaTe in GaSe_1?xTe_x solid solutions takes place in the composition range 0.27 ? × ? 0.72. Only one mode behaviour of the optical phonons was observed in GaSe_1?xTe_x system.     

Hyperfine characterization of Bi1.9Te0.1SrNb1.9Hf0.1O9

The Aurivillius type oxide Bi_1.9Te_0.1SrNb_1.9Hf_0.1O₉ has been studied by Perturbed Angular Correlations spectroscopy using ¹⁸¹Ta probes. The spin precession curves were measured from room temperature up to 873 K. Two sites are occupied by probes and the temperature dependence of both indicates a continuous phase transition at about 625 K. One site is ordered while the other is disordered. This situation is analyzed in terms of simple models already applied to perovskites. The transition temperature of the solid solution Bi_2−xTe_xSrNb_2−xHf_xO₉ (with 0≤x≤0.5) shows a strong dependence on composition.     

Electrodeposition of BixSb2−xTey thermoelectric thin films from nitric acid and hydrochloric acid systems

The electrochemical behaviors of Bi^III, Te^IV and Sb^III single ions and their mixtures were investigated in nitric acid and hydrochloric acid system separately. Based on which, Bi_xSb_2−xTe_y thermoelectric films were prepared by potentiostatic electrodeposition from the solutions with different concentrations of Bi^III, Te^IV and Sb^III in the two acid systems. The morphologies, compositions, structures, Seebeck coefficients and resistivities of the deposited thin films were characterized and compared by ESEM (or FESEM), EDS, XRD, Seebeck coefficient measurement system and four-probe resistivity measuring device respectively. The results show that although Bi_xSb_2−xTe_y thermoelectric thin film which structure is consistent with the standard pattern of Bi_0.5Sb_1.5Te₃ can be gained in both of the two acid solutions by adjusting the deposition potential, their morphologies and thermoelectric properties have big differences in different acid solutions.     

Electrodeposition of n-type Bi2Te3−ySey thermoelectric thin films on stainless steel and gold substrates

Thermoelectric films of n-Bi₂Te_3−ySe_y were prepared by potentiostatic electrodeposition technique onto stainless steel and gold substrates at room temperature. These films were used for morphological, compositional and structural analysis by environment scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The effect of different substrates on the structure and morphology of Bi₂Te_3−ySe_y films and relation between Se content in the electrodepositing solutions and in the films were also investigated. These studies revealed that Bi, Te and Se could be co-deposited to form Bi₂Te_3−ySe_y semiconductor compound in the solution containing Bi³⁺, HTeO₂⁺ and H₂SeO₃. The morphology and structure of the films are sensitive to the substrate material. The doped content of Se element in the Bi₂Te_3−ySe_y compound can be controlled by adjusting the Se⁴⁺ concentration in the electrodepositing solution. X-ray diffraction analysis indicates that the films prepared at −40 mV versus saturated calomel electrode (SCE) exhibit strong (1 1 0) orientation with rhombohedral structure.     

The structural and multiferroic properties of (Bi1−xLax)(Fe0.95Co0.05)O3 ceramics

La and Co co-doped BiFeO₃ ((Bi_1−xLa_x)(Fe_0.95Co_0.05)O₃ (x=0, 0.10, 0.20, 0.30)) ceramics were prepared by tartaric acid modified sol–gel method. The X-ray diffraction patterns indicate a transition from rhombohedral structure to tetragonal structure at x=0.20, which has been confirmed by the Raman measurements. The band gap increases with increasing x to 0.20, and then decreases with further increasing x to 0.30. The structural transition has significant effects on the multiferroic properties. The remnant magnetization and saturate ferromagnetic magnetization decrease abruptly with increasing x to 0.10, and then gradually increase with further increasing x up to 0.30. The coercivity is significantly reduced with increasing La doping concentration. The ferroelectricity has been improved by La doping, and the polarization increases with increasing x to 0.10, then decreases with further increasing x up to 0.30. The simultaneous coexistence of soft ferromagnetism and ferroelectricity at room temperature in tetragonal Bi_0.70La_0.30Fe_0.95Co_0.05O₃ indicates the potential multiferroic applications.     

Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth

The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi₄Ti₃O₁₂ single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi₂O₃ and Bi₄Ti₃O₁₂) and an impurity flux (VO_x, WO_x, CuO_x, BiPO_x, BaO, MoO_x) were fabricated on the SrTiO₃ (0 0 1) substrates. Then, stoichiometric Bi₄Ti₃O₁₂ was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi₂O₃, for Bi₄Ti₃O₁₂ single crystal film.     

Electrical properties of pulsed laser-deposited SrxBiyTa2O9 thin films on Bi/Sr ratios

The dependence of the electrical properties of Sr_xBi_yTa₂O₉ thin films on the (Bi/Sr ratio 1.6, 2.3, 2.8, 3.4) has been investigated. The Sr_xBi_yTa₂O₉ ferroelectric thin films were synthesized on Pt/Ti/SiO₂/Si substrates using the pulsed laser deposition method. Saturation polarization (P_st) and coercive field (2E_c) depend on the Bi/Sr ratio. P_st increases while E_c decreases with an increase in Bi/Sr ratio. Atomic Force Microscopy images show that the grain size grows with increasing Bi/Sr ratio. It is observed that the impedance behavior in Sr_xBi_yTa₂O₉ thin film, conforms to the Constant Phase Element (CPE) model. It is believed that the diffuse charges at the grain boundary build up a surface polarization because the impedance behavior close to pure capacitor with grain size increased.     

The phase transition, hygroscopicity, and thermal expansion properties of Yb2-xAlxMo3O12

Materials with the formula Yb2-xAlxMo3O12 （x = 0.1, 0.2, 0.3, 0.4, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, and 1.8） were synthesized and their structures, phase transitions, and hygroscopicity investigated using X-ray powder diffraction, Raman spectroscopy, and thermal analysis. It is shown that Yb2-xAlxMo3012 solid solutions crystallize in a single monoclinic phase for 1.7 〈 x 〈 2.0 and in a single orthorhombic phase for 0.0 〈 x 〈 0,4, and exhibit the characteristics of both monoclinic and orthorhombic structures outside these compositional ranges. The monoclinic to orthorhonlbic phase transition temperature of A12Mo3012 can be reduced by partial substitution of A13＋ by Yb3＋, and the Yb2-zAlxMo3012 （0.0 〈 x 〈 2.0） materials are hydrated at room temperature and contain two kinds of water species. One of these interacts strongly with and hinders the motions of the polyhedra, while the other does not. The partial substitution of A13＋ for Yb3＋ in Yb2Mo3012 decreases its hygroscopicity, and the linear thermal expansion coefficients after complete removal of water species are measured to be -9.1 x 10-6/K, -5.5 x 10-6/K, 5.74 x 10-6/K, and 9.5 x 10 6/K for Ybl.sAlo.2（MoO4）3, Yb1.6Alo.4（MoO4）3, Ybo.4All.6（Mo04）3, and Ybo.2Al1.8（MoO4）3, respectively.     

Raman spectroscopic studies of PbxLa1−xTi1−x/4O3 thin films grown on Si substrates by RF magnetron sputtering

A systematic spectroscopic investigation of Pb_xLa_1−xTi_1−x/4O₃ (PLT) thin films grown on PbO_x/Pt/Ti/SiO₂/Si substrate by RF magnetron sputtering was performed by using confocal Raman spectroscopy. Influence of the growth condition modification including different growth temperatures, with various buffer layer thickness, and post-annealing treatments were analyzed with taking advantages of the corresponding Raman spectral band variation in the respective process. Significant change in the spectral bands occurred with the alteration of the growth condition, and the related mechanisms were discussed after spectral deconvolution, providing reliable information about the direction for film growth.     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.     

Novel approach to preparation of LiMn2O4 core/LiNixMn2−xO4 shell composite

Combining two methods, coating and doping, to modify spinel LiMn₂O₄, is a novel approach we used to synthesize active material. First we coated the LiMn₂O₄ particles with the nickel oxide particles by means of homogenous precipitation, and then the nickel oxide-coated LiMn₂O₄ was calcined at 750 °C to form a LiNi_xMn_2−xO₄ shell on the surface of spinel LiMn₂O₄ particles. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cyclic voltammetry (CV) and charge-discharge test were performed to characterize the spinel LiMn₂O₄ before and after modification. The experimental results indicated that a spinel LiMn₂O₄ core is surrounded by a LiNi_xMn_2−xO₄ shell. The resulting composite showed excellent electrochemical cycling performance with an average fading rate of 0.014% per cycle. This improved cycle stability is greatly attributed to the suppression of Jahn-Teller distortion on the surface of spinel LiMn₂O₄ particles during cycling.     

Synthesis and characterization of spherical core-shell particles SiO2@AgEu(MoO4)2

Submicron spherical SiO₂ particles have been coated with AgEu(MoO₄)₂ phosphor layers by a sol-gel process, followed by surface reaction at high temperature, to get core/shell structured SiO₂@AgEu(MoO₄)₂ particles. X-ray diffraction (XRD), Fourier-transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) were used to characterize the structure and morphology of the resulted core-shell phosphors. The luminescent properties of the core-shell structured phosphors have also been measured at room temperature, and their photoluminescence (PL) spectra are similar to the pure AgEu(MoO₄)₂ phosphor prepared by the same sol-gel method exhibiting red emission.